JPS6488998A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS6488998A
JPS6488998A JP24550587A JP24550587A JPS6488998A JP S6488998 A JPS6488998 A JP S6488998A JP 24550587 A JP24550587 A JP 24550587A JP 24550587 A JP24550587 A JP 24550587A JP S6488998 A JPS6488998 A JP S6488998A
Authority
JP
Japan
Prior art keywords
time
transistor
normal reading
verifying
dummy cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24550587A
Other languages
Japanese (ja)
Other versions
JP2925138B2 (en
Inventor
Hiroshi Iwahashi
Eishin Minagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP24550587A priority Critical patent/JP2925138B2/en
Publication of JPS6488998A publication Critical patent/JPS6488998A/en
Application granted granted Critical
Publication of JP2925138B2 publication Critical patent/JP2925138B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To enlarge a noise margin at the time of normal reading by setting a data detection reference more strictly at the time of verifying than that at the time of the normal reading. CONSTITUTION:At the time of the verifying and at the time of the normal reading, the ON/OFF state of a transistor for switching is switched and the number of a load transistor or the number of the load transistor of a bit line at a dummy cell side or the number of a transistor in a data detection circuit is switched to the dummy cell side. Thus, the data detection reference can be set more strictly at the time of the verifying than that at the normal reading and the difference between a read potential and a reference potential is enlarged at the time of the normal reading after passing a verifying check. So that, a column selection transistor 2 and the load transistor 4 are connected in series to an EPROM 1 and the dummy cell 1, a selection transistor 2 and a load transistor 4 which are connected in series are provided on the joint of the transistors 2 and 4. Besides, a high voltage detection circuit 6 is provided.
JP24550587A 1987-09-29 1987-09-29 Non-volatile semiconductor memory Expired - Lifetime JP2925138B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24550587A JP2925138B2 (en) 1987-09-29 1987-09-29 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24550587A JP2925138B2 (en) 1987-09-29 1987-09-29 Non-volatile semiconductor memory

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP10130297A Division JP2954079B2 (en) 1997-04-18 1997-04-18 Non-volatile semiconductor memory
JP10130397A Division JP2954080B2 (en) 1997-04-18 1997-04-18 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS6488998A true JPS6488998A (en) 1989-04-03
JP2925138B2 JP2925138B2 (en) 1999-07-28

Family

ID=17134669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24550587A Expired - Lifetime JP2925138B2 (en) 1987-09-29 1987-09-29 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JP2925138B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04360096A (en) * 1991-06-06 1992-12-14 Mitsubishi Electric Corp Data writing and reading method for semiconductor memory
JPH08235884A (en) * 1994-11-15 1996-09-13 Sgs Thomson Microelectron Ltd Reference circuit
JP2005302091A (en) * 2004-04-07 2005-10-27 Toshiba Corp Semiconductor integrated circuit device and program method therefor
JP2009146467A (en) * 2007-12-11 2009-07-02 Toshiba Corp Semiconductor integrated circuit device
JP2012238379A (en) * 2010-04-09 2012-12-06 Semiconductor Energy Lab Co Ltd Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222093A (en) * 1985-03-28 1986-10-02 Toshiba Corp Nonvolatile semiconductor memory device
JPS62222498A (en) * 1986-03-10 1987-09-30 Fujitsu Ltd Sense amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222093A (en) * 1985-03-28 1986-10-02 Toshiba Corp Nonvolatile semiconductor memory device
JPS62222498A (en) * 1986-03-10 1987-09-30 Fujitsu Ltd Sense amplifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04360096A (en) * 1991-06-06 1992-12-14 Mitsubishi Electric Corp Data writing and reading method for semiconductor memory
JPH08235884A (en) * 1994-11-15 1996-09-13 Sgs Thomson Microelectron Ltd Reference circuit
JP2005302091A (en) * 2004-04-07 2005-10-27 Toshiba Corp Semiconductor integrated circuit device and program method therefor
JP2009146467A (en) * 2007-12-11 2009-07-02 Toshiba Corp Semiconductor integrated circuit device
JP2012238379A (en) * 2010-04-09 2012-12-06 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2925138B2 (en) 1999-07-28

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