DE69321623D1 - Redundanzspeicherzellen mit Parallelprüffunktion enthaltendes Halbleiter-Speichergerät - Google Patents

Redundanzspeicherzellen mit Parallelprüffunktion enthaltendes Halbleiter-Speichergerät

Info

Publication number
DE69321623D1
DE69321623D1 DE69321623T DE69321623T DE69321623D1 DE 69321623 D1 DE69321623 D1 DE 69321623D1 DE 69321623 T DE69321623 T DE 69321623T DE 69321623 T DE69321623 T DE 69321623T DE 69321623 D1 DE69321623 D1 DE 69321623D1
Authority
DE
Germany
Prior art keywords
parallel test
device containing
memory device
test function
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69321623T
Other languages
English (en)
Other versions
DE69321623T2 (de
Inventor
Akihiko Kagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69321623D1 publication Critical patent/DE69321623D1/de
Application granted granted Critical
Publication of DE69321623T2 publication Critical patent/DE69321623T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE69321623T 1992-01-30 1993-01-27 Redundanzspeicherzellen mit Parallelprüffunktion enthaltendes Halbleiter-Speichergerät Expired - Lifetime DE69321623T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4040329A JPH05210998A (ja) 1992-01-30 1992-01-30 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69321623D1 true DE69321623D1 (de) 1998-11-26
DE69321623T2 DE69321623T2 (de) 1999-06-17

Family

ID=12577578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321623T Expired - Lifetime DE69321623T2 (de) 1992-01-30 1993-01-27 Redundanzspeicherzellen mit Parallelprüffunktion enthaltendes Halbleiter-Speichergerät

Country Status (5)

Country Link
US (1) US5394369A (de)
EP (1) EP0553788B1 (de)
JP (1) JPH05210998A (de)
KR (1) KR960002015B1 (de)
DE (1) DE69321623T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338199A (ja) * 1993-05-27 1994-12-06 Hitachi Ltd 半導体記憶装置
JPH07153296A (ja) * 1993-11-26 1995-06-16 Nec Corp 半導体記憶装置
JPH08161899A (ja) * 1994-04-29 1996-06-21 Texas Instr Inc <Ti> メモリデバイスおよび半導体デバイステスト方法
JPH09107048A (ja) 1995-03-30 1997-04-22 Mitsubishi Electric Corp 半導体パッケージ
DE19655006C2 (de) * 1995-03-30 2001-12-06 Mitsubishi Electric Corp Halbleiterchip
US6111800A (en) * 1997-12-05 2000-08-29 Cypress Semiconductor Corporation Parallel test for asynchronous memory
US6249466B1 (en) * 2000-03-23 2001-06-19 Cypress Semiconductor Corp. Row redundancy scheme
JP2002208299A (ja) * 2001-01-04 2002-07-26 Mitsubishi Electric Corp 半導体記憶装置
US6975945B2 (en) * 2003-08-26 2005-12-13 Hewlett Packard Development Company, L.P. System and method for indication of fuse defects based upon analysis of fuse test data
KR100851996B1 (ko) * 2007-02-12 2008-08-13 주식회사 하이닉스반도체 반도체 메모리 장치의 컬럼 어드레스 디코딩 회로 및 방법
JP5405007B2 (ja) 2007-07-20 2014-02-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
KR20140082173A (ko) * 2012-12-24 2014-07-02 에스케이하이닉스 주식회사 어드레스 카운팅 회로 및 이를 이용한 반도체 장치
US9905315B1 (en) * 2017-01-24 2018-02-27 Nxp B.V. Error-resilient memory device with row and/or column folding with redundant resources and repair method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
JP2780354B2 (ja) * 1989-07-04 1998-07-30 富士通株式会社 半導体メモリ装置
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조

Also Published As

Publication number Publication date
JPH05210998A (ja) 1993-08-20
KR960002015B1 (ko) 1996-02-09
US5394369A (en) 1995-02-28
DE69321623T2 (de) 1999-06-17
EP0553788A2 (de) 1993-08-04
KR930017042A (ko) 1993-08-30
EP0553788B1 (de) 1998-10-21
EP0553788A3 (en) 1994-12-14

Similar Documents

Publication Publication Date Title
KR910010534A (ko) 반도체 기억장치의 용장회로
DE69321623T2 (de) Redundanzspeicherzellen mit Parallelprüffunktion enthaltendes Halbleiter-Speichergerät
KR920013446A (ko) 블럭라이트 기능을 구비하는 반도체기억장치
KR910008727A (ko) 플래시라이트기능을 구비한 반도체기억장치
KR950025788A (ko) 용장성 메모리셀의 테스트 절차용으로 활용가능한 용장성 디코더를 구비한 반도체 메모리 장치
IT1255932B (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
KR940022583A (ko) 병렬비트테스트모드내장 반도체 메모리
DE3689128D1 (de) Halbleiterspeichergerät mit einer Korrekturfunktion.
DE3781294D1 (de) Halbleiterspeicheranordnung.
JPS563499A (en) Semiconductor memory device
DE59101394D1 (de) Integrierter halbleiterspeicher mit paralleltestmöglichkeit und redundanzverfahren.
DE69626792D1 (de) Elektrische löschbare und programmierbare nichtflüchtige Speicheranordnung mit prüfbaren Redundanzschaltungen
KR860003603A (ko) 반도체 메모리
KR870009384A (ko) 반도체 기억 장치
KR970066902A (ko) 디바이스간 셀 교체를 구현하기 위한 시스템 및 방법
KR950009279A (ko) 메모리 시험을 실시하는 반도체 메모리 장치
KR960012032A (ko) 반도체 기억장치
KR880005623A (ko) 멀리비트 테스트모드에서 임의의 테스트패턴으로 메가비트 기억모듈을 테스트하기 위한 방법 및 장치
DE69220256D1 (de) Halbleiterspeicheranordnung
KR920022307A (ko) 판독 전용 반도체 메모리 장치
JPS57111893A (en) Relieving system of defective memory
EP0586114A3 (en) A semiconductor read only memory
KR960019313A (ko) 반도체 메모리 장치
TW340219B (en) Semiconductor memory device having redundant memory cell array
KR920010624A (ko) 반도체기억장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP

R071 Expiry of right

Ref document number: 553788

Country of ref document: EP