RU2014125069A - Полупроводниковый модуль - Google Patents

Полупроводниковый модуль Download PDF

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RU2014125069A
RU2014125069A RU2014125069A RU2014125069A RU2014125069A RU 2014125069 A RU2014125069 A RU 2014125069A RU 2014125069 A RU2014125069 A RU 2014125069A RU 2014125069 A RU2014125069 A RU 2014125069A RU 2014125069 A RU2014125069 A RU 2014125069A
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semiconductor
capacitor
block
electrode
semiconductor module
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RU2014125069A
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Кодзи ХОТТА
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Тойота Дзидося Кабусики Кайся
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1. Полупроводниковый модуль, содержащий:множество охлаждающих пластин;множество плоско-пластинчатых полупроводниковых блоков, каждый из которых включает в себя полупроводниковый элемент, размещенный в нем;множество плоско-пластинчатых блоков устройств, каждый из которых включает в себя конденсатор, размещенный в нем, и имеет толщину, в целом, равную толщине полупроводникового блока; иохлаждающие трубки, соединяющие множество пластин, расположенных рядом друг с другом, и в которых протекает хладагент, при этом:множество охлаждающих пластин размещены, в целом, с равными интервалами, множество охлаждающих пластин наслоены поочередно с множеством полупроводниковых блоков, один полупроводниковый блок и один блок устройства размещены бок о бок в поперечном направлении между двумя охлаждающими пластинами, расположенными рядом друг с другом, и полупроводниковый элемент в одном полупроводниковом блоке электрически соединен с конденсатором в одном блоке устройства через линейные электрические шины.2. Полупроводниковый модуль по п. 1, в которомодин полупроводниковый блок включает в себя схему последовательного соединения двух переключающих схем, каждая из которых включает в себя транзистор и диод, соединенные встречно-параллельно друг с другом, и первый электрод, соединенный с положительным электродом схемы последовательного соединения, ивторой электрод, соединенный с ее отрицательным электродом, продолжающимся из одного полупроводникового блока;два электрода конденсатора продолжаются из одного блока устройства; ипервый электрод электрически соединен с одним из электродов конденсатора через первую линейную электр

Claims (6)

1. Полупроводниковый модуль, содержащий:
множество охлаждающих пластин;
множество плоско-пластинчатых полупроводниковых блоков, каждый из которых включает в себя полупроводниковый элемент, размещенный в нем;
множество плоско-пластинчатых блоков устройств, каждый из которых включает в себя конденсатор, размещенный в нем, и имеет толщину, в целом, равную толщине полупроводникового блока; и
охлаждающие трубки, соединяющие множество пластин, расположенных рядом друг с другом, и в которых протекает хладагент, при этом:
множество охлаждающих пластин размещены, в целом, с равными интервалами, множество охлаждающих пластин наслоены поочередно с множеством полупроводниковых блоков, один полупроводниковый блок и один блок устройства размещены бок о бок в поперечном направлении между двумя охлаждающими пластинами, расположенными рядом друг с другом, и полупроводниковый элемент в одном полупроводниковом блоке электрически соединен с конденсатором в одном блоке устройства через линейные электрические шины.
2. Полупроводниковый модуль по п. 1, в котором
один полупроводниковый блок включает в себя схему последовательного соединения двух переключающих схем, каждая из которых включает в себя транзистор и диод, соединенные встречно-параллельно друг с другом, и первый электрод, соединенный с положительным электродом схемы последовательного соединения, и
второй электрод, соединенный с ее отрицательным электродом, продолжающимся из одного полупроводникового блока;
два электрода конденсатора продолжаются из одного блока устройства; и
первый электрод электрически соединен с одним из электродов конденсатора через первую линейную электрическую шину, а второй электрод электрически соединен с другим из электродов конденсатора через вторую линейную электрическую шину.
3. Полупроводниковый модуль по п. 1 или 2, в котором блок устройства отформован из полимера.
4. Полупроводниковый модуль по п. 3, в котором полимерная формованная часть блока устройства отформована посредством заливки или распыления.
5. Полупроводниковый модуль по п. 1 или 2, в котором конденсатор является конденсатором с плоской намоткой.
6. Полупроводниковый модуль по п. 1 или 2, в котором конденсатор является многослойным конденсатором.
RU2014125069A 2011-12-20 2011-12-20 Полупроводниковый модуль RU2014125069A (ru)

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PCT/JP2011/079559 WO2013094028A1 (ja) 2011-12-20 2011-12-20 半導体モジュール

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US (1) US20140339693A1 (ru)
EP (1) EP2797112A4 (ru)
KR (1) KR20140098805A (ru)
CN (1) CN103999213A (ru)
RU (1) RU2014125069A (ru)
WO (1) WO2013094028A1 (ru)

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