RS55452B1 - Integrisani mram keš modul - Google Patents

Integrisani mram keš modul

Info

Publication number
RS55452B1
RS55452B1 RS20161172A RSP20161172A RS55452B1 RS 55452 B1 RS55452 B1 RS 55452B1 RS 20161172 A RS20161172 A RS 20161172A RS P20161172 A RSP20161172 A RS P20161172A RS 55452 B1 RS55452 B1 RS 55452B1
Authority
RS
Serbia
Prior art keywords
mram
memory
main memory
chip
module
Prior art date
Application number
RS20161172A
Other languages
English (en)
Serbian (sr)
Inventor
Xiangyu Dong
Jung Pill Kim
Jungwon Suh
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of RS55452B1 publication Critical patent/RS55452B1/sr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5643—Multilevel memory comprising cache storage devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Semiconductor Memories (AREA)
RS20161172A 2012-12-20 2013-12-20 Integrisani mram keš modul RS55452B1 (sr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/721,092 US9378793B2 (en) 2012-12-20 2012-12-20 Integrated MRAM module
PCT/US2013/076994 WO2014100619A1 (en) 2012-12-20 2013-12-20 Integrated mram cache module
EP13822034.8A EP2936493B1 (en) 2012-12-20 2013-12-20 Integrated mram cache module

Publications (1)

Publication Number Publication Date
RS55452B1 true RS55452B1 (sr) 2017-04-28

Family

ID=49998680

Family Applications (1)

Application Number Title Priority Date Filing Date
RS20161172A RS55452B1 (sr) 2012-12-20 2013-12-20 Integrisani mram keš modul

Country Status (8)

Country Link
US (1) US9378793B2 (enExample)
EP (1) EP2936493B1 (enExample)
JP (1) JP6096929B2 (enExample)
CN (1) CN104871248B (enExample)
HR (1) HRP20170015T1 (enExample)
RS (1) RS55452B1 (enExample)
SM (2) SMT201700040T1 (enExample)
WO (1) WO2014100619A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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HUE047329T2 (hu) * 2013-08-13 2020-04-28 Univ Northwestern Peptiddel konjugált részecskék
KR20150019920A (ko) * 2013-08-16 2015-02-25 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
JP5992592B1 (ja) 2015-09-16 2016-09-14 株式会社東芝 キャッシュメモリシステム
CN105550127A (zh) * 2015-12-08 2016-05-04 中电海康集团有限公司 一种基于stt-mram的读写缓存分离的ssd控制器
CN105527889A (zh) * 2015-12-08 2016-04-27 中电海康集团有限公司 一种采用stt-mram作为单一存储器的微控制器
CN105551516A (zh) * 2015-12-15 2016-05-04 中电海康集团有限公司 一种基于stt-mram构建的存储器
KR102353058B1 (ko) * 2016-02-02 2022-01-20 삼성전자주식회사 시스템 온 칩 및 그것의 동작 방법
CN107301455B (zh) * 2017-05-05 2020-11-03 中国科学院计算技术研究所 用于卷积神经网络的混合立方体存储系统及加速计算方法
JP7004453B2 (ja) * 2017-08-11 2022-01-21 株式会社半導体エネルギー研究所 グラフィックスプロセッシングユニット
JP6829172B2 (ja) * 2017-09-20 2021-02-10 キオクシア株式会社 半導体記憶装置
US11968843B2 (en) * 2018-06-28 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Processing core and MRAM memory unit integrated on a single chip
CN112748859B (zh) * 2019-10-30 2023-03-21 上海磁宇信息科技有限公司 Mram-nand控制器及其数据写入方法
CN117667829A (zh) * 2022-08-24 2024-03-08 华为技术有限公司 一种片上系统
CN118732924B (zh) * 2023-03-28 2025-11-11 华为技术有限公司 一种数据访存方法及片上系统

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US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US6289420B1 (en) * 1999-05-06 2001-09-11 Sun Microsystems, Inc. System and method for increasing the snoop bandwidth to cache tags in a multiport cache memory subsystem
US20040193782A1 (en) 2003-03-26 2004-09-30 David Bordui Nonvolatile intelligent flash cache memory
DE10317147A1 (de) 2003-04-14 2004-10-28 Nec Electronics (Europe) Gmbh Sicheres Speichersystem mit Flash-Speichern und Cache-Speicher
JP3896112B2 (ja) * 2003-12-25 2007-03-22 エルピーダメモリ株式会社 半導体集積回路装置
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US20060289970A1 (en) 2005-06-28 2006-12-28 Dietmar Gogl Magnetic shielding of MRAM chips
US7610445B1 (en) 2005-07-18 2009-10-27 Palm, Inc. System and method for improving data integrity and memory performance using non-volatile media
US7464225B2 (en) * 2005-09-26 2008-12-09 Rambus Inc. Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology
US20070290333A1 (en) * 2006-06-16 2007-12-20 Intel Corporation Chip stack with a higher power chip on the outside of the stack
US7616470B2 (en) * 2006-06-16 2009-11-10 International Business Machines Corporation Method for achieving very high bandwidth between the levels of a cache hierarchy in 3-dimensional structures, and a 3-dimensional structure resulting therefrom
US20080133864A1 (en) 2006-12-01 2008-06-05 Jonathan Randall Hinkle Apparatus, system, and method for caching fully buffered memory
US20090125706A1 (en) * 2007-11-08 2009-05-14 Hoover Russell D Software Pipelining on a Network on Chip
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JP2013065150A (ja) * 2011-09-16 2013-04-11 Toshiba Corp キャッシュメモリ装置、プロセッサ、および情報処理装置
US20130108889A1 (en) * 2011-10-27 2013-05-02 Agency For Science, Technology And Research Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
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Also Published As

Publication number Publication date
HRP20170015T1 (hr) 2017-02-24
SMT201700040T1 (it) 2017-03-08
WO2014100619A1 (en) 2014-06-26
SMT201700040B (it) 2017-03-08
CN104871248B (zh) 2017-10-20
US20140177325A1 (en) 2014-06-26
US9378793B2 (en) 2016-06-28
JP6096929B2 (ja) 2017-03-15
EP2936493A1 (en) 2015-10-28
EP2936493B1 (en) 2016-10-12
CN104871248A (zh) 2015-08-26
JP2016502223A (ja) 2016-01-21

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