SMT201700040B - Modulo cache mram integrato - Google Patents
Modulo cache mram integratoInfo
- Publication number
- SMT201700040B SMT201700040B SM201700040T SM201700040T SMT201700040B SM T201700040 B SMT201700040 B SM T201700040B SM 201700040 T SM201700040 T SM 201700040T SM 201700040 T SM201700040 T SM 201700040T SM T201700040 B SMT201700040 B SM T201700040B
- Authority
- SM
- San Marino
- Prior art keywords
- integrated cache
- mram module
- mram
- module
- cache
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5643—Multilevel memory comprising cache storage devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/721,092 US9378793B2 (en) | 2012-12-20 | 2012-12-20 | Integrated MRAM module |
PCT/US2013/076994 WO2014100619A1 (en) | 2012-12-20 | 2013-12-20 | Integrated mram cache module |
Publications (1)
Publication Number | Publication Date |
---|---|
SMT201700040B true SMT201700040B (it) | 2017-03-08 |
Family
ID=49998680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SM201700040T SMT201700040B (it) | 2012-12-20 | 2017-01-19 | Modulo cache mram integrato |
Country Status (8)
Country | Link |
---|---|
US (1) | US9378793B2 (it) |
EP (1) | EP2936493B1 (it) |
JP (1) | JP6096929B2 (it) |
CN (1) | CN104871248B (it) |
HR (1) | HRP20170015T1 (it) |
RS (1) | RS55452B1 (it) |
SM (1) | SMT201700040B (it) |
WO (1) | WO2014100619A1 (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150019920A (ko) * | 2013-08-16 | 2015-02-25 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
JP5992592B1 (ja) | 2015-09-16 | 2016-09-14 | 株式会社東芝 | キャッシュメモリシステム |
CN105550127A (zh) * | 2015-12-08 | 2016-05-04 | 中电海康集团有限公司 | 一种基于stt-mram的读写缓存分离的ssd控制器 |
CN105527889A (zh) * | 2015-12-08 | 2016-04-27 | 中电海康集团有限公司 | 一种采用stt-mram作为单一存储器的微控制器 |
CN105551516A (zh) * | 2015-12-15 | 2016-05-04 | 中电海康集团有限公司 | 一种基于stt-mram构建的存储器 |
KR102353058B1 (ko) * | 2016-02-02 | 2022-01-20 | 삼성전자주식회사 | 시스템 온 칩 및 그것의 동작 방법 |
CN107301455B (zh) * | 2017-05-05 | 2020-11-03 | 中国科学院计算技术研究所 | 用于卷积神经网络的混合立方体存储系统及加速计算方法 |
JP7004453B2 (ja) * | 2017-08-11 | 2022-01-21 | 株式会社半導体エネルギー研究所 | グラフィックスプロセッシングユニット |
JP6829172B2 (ja) * | 2017-09-20 | 2021-02-10 | キオクシア株式会社 | 半導体記憶装置 |
US11968843B2 (en) * | 2018-06-28 | 2024-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Processing core and MRAM memory unit integrated on a single chip |
CN112748859B (zh) * | 2019-10-30 | 2023-03-21 | 上海磁宇信息科技有限公司 | Mram-nand控制器及其数据写入方法 |
CN117667829A (zh) * | 2022-08-24 | 2024-03-08 | 华为技术有限公司 | 一种片上系统 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5502667A (en) * | 1993-09-13 | 1996-03-26 | International Business Machines Corporation | Integrated multichip memory module structure |
US6289420B1 (en) * | 1999-05-06 | 2001-09-11 | Sun Microsystems, Inc. | System and method for increasing the snoop bandwidth to cache tags in a multiport cache memory subsystem |
US20040193782A1 (en) | 2003-03-26 | 2004-09-30 | David Bordui | Nonvolatile intelligent flash cache memory |
DE10317147A1 (de) | 2003-04-14 | 2004-10-28 | Nec Electronics (Europe) Gmbh | Sicheres Speichersystem mit Flash-Speichern und Cache-Speicher |
JP3896112B2 (ja) * | 2003-12-25 | 2007-03-22 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
US20050177679A1 (en) | 2004-02-06 | 2005-08-11 | Alva Mauricio H. | Semiconductor memory device |
TWI285893B (en) | 2004-11-12 | 2007-08-21 | Ind Tech Res Inst | Hybrid MRAM memory array architecture |
JP2006323739A (ja) * | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | メモリモジュール、メモリシステム、及び情報機器 |
JP2006338513A (ja) | 2005-06-03 | 2006-12-14 | Renesas Technology Corp | データ処理装置 |
US20060289970A1 (en) | 2005-06-28 | 2006-12-28 | Dietmar Gogl | Magnetic shielding of MRAM chips |
US7610445B1 (en) | 2005-07-18 | 2009-10-27 | Palm, Inc. | System and method for improving data integrity and memory performance using non-volatile media |
US7464225B2 (en) * | 2005-09-26 | 2008-12-09 | Rambus Inc. | Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology |
US20070290333A1 (en) * | 2006-06-16 | 2007-12-20 | Intel Corporation | Chip stack with a higher power chip on the outside of the stack |
US7616470B2 (en) * | 2006-06-16 | 2009-11-10 | International Business Machines Corporation | Method for achieving very high bandwidth between the levels of a cache hierarchy in 3-dimensional structures, and a 3-dimensional structure resulting therefrom |
US20080133864A1 (en) | 2006-12-01 | 2008-06-05 | Jonathan Randall Hinkle | Apparatus, system, and method for caching fully buffered memory |
US20090125706A1 (en) * | 2007-11-08 | 2009-05-14 | Hoover Russell D | Software Pipelining on a Network on Chip |
KR101401560B1 (ko) * | 2007-12-13 | 2014-06-03 | 삼성전자주식회사 | 반도체 메모리 시스템 및 그것의 마모도 관리 방법 |
JP2012014787A (ja) * | 2010-06-30 | 2012-01-19 | Sony Corp | 記憶装置 |
KR101713051B1 (ko) | 2010-11-29 | 2017-03-07 | 삼성전자주식회사 | 하이브리드 메모리 시스템, 및 그 관리 방법 |
CN105702277B (zh) | 2010-12-17 | 2018-05-08 | 艾沃思宾技术公司 | 存储器系统和存储器控制器 |
JP2012243251A (ja) * | 2011-05-24 | 2012-12-10 | Elpida Memory Inc | メモリシステム |
JP2013065150A (ja) * | 2011-09-16 | 2013-04-11 | Toshiba Corp | キャッシュメモリ装置、プロセッサ、および情報処理装置 |
US20130108889A1 (en) * | 2011-10-27 | 2013-05-02 | Agency For Science, Technology And Research | Magnetoresistance Device and Memory Device Including the Magnetoresistance Device |
US20130346695A1 (en) * | 2012-06-25 | 2013-12-26 | Advanced Micro Devices, Inc. | Integrated circuit with high reliability cache controller and method therefor |
-
2012
- 2012-12-20 US US13/721,092 patent/US9378793B2/en active Active
-
2013
- 2013-12-20 WO PCT/US2013/076994 patent/WO2014100619A1/en active Application Filing
- 2013-12-20 RS RS20161172A patent/RS55452B1/sr unknown
- 2013-12-20 EP EP13822034.8A patent/EP2936493B1/en active Active
- 2013-12-20 CN CN201380066504.7A patent/CN104871248B/zh active Active
- 2013-12-20 JP JP2015549786A patent/JP6096929B2/ja active Active
-
2017
- 2017-01-05 HR HRP20170015TT patent/HRP20170015T1/hr unknown
- 2017-01-19 SM SM201700040T patent/SMT201700040B/it unknown
Also Published As
Publication number | Publication date |
---|---|
CN104871248A (zh) | 2015-08-26 |
JP2016502223A (ja) | 2016-01-21 |
US20140177325A1 (en) | 2014-06-26 |
EP2936493A1 (en) | 2015-10-28 |
WO2014100619A1 (en) | 2014-06-26 |
EP2936493B1 (en) | 2016-10-12 |
CN104871248B (zh) | 2017-10-20 |
RS55452B1 (sr) | 2017-04-28 |
JP6096929B2 (ja) | 2017-03-15 |
US9378793B2 (en) | 2016-06-28 |
HRP20170015T1 (hr) | 2017-02-24 |
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