NL2001369A1 - Werkwijze voor maskerloze deeltjesbundelbelichting. - Google Patents

Werkwijze voor maskerloze deeltjesbundelbelichting.

Info

Publication number
NL2001369A1
NL2001369A1 NL2001369A NL2001369A NL2001369A1 NL 2001369 A1 NL2001369 A1 NL 2001369A1 NL 2001369 A NL2001369 A NL 2001369A NL 2001369 A NL2001369 A NL 2001369A NL 2001369 A1 NL2001369 A1 NL 2001369A1
Authority
NL
Netherlands
Prior art keywords
particle beam
beam exposure
maskless particle
maskless
exposure
Prior art date
Application number
NL2001369A
Other languages
English (en)
Other versions
NL2001369C2 (nl
Inventor
Heinrich Fragner
Elmar Platzgummer
Original Assignee
Ims Nanofabrication Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ims Nanofabrication Ag filed Critical Ims Nanofabrication Ag
Publication of NL2001369A1 publication Critical patent/NL2001369A1/nl
Priority to NL2004846A priority Critical patent/NL2004846C2/nl
Application granted granted Critical
Publication of NL2001369C2 publication Critical patent/NL2001369C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL2001369A 2007-03-29 2008-03-13 Werkwijze voor maskerloze deeltjesbundelbelichting. NL2001369C2 (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL2004846A NL2004846C2 (nl) 2007-03-29 2010-06-08 Werkwijze voor maskerloze deeltjesbundelbelichting.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT4962007 2007-03-29
AT4962007 2007-03-29

Publications (2)

Publication Number Publication Date
NL2001369A1 true NL2001369A1 (nl) 2008-09-30
NL2001369C2 NL2001369C2 (nl) 2010-06-14

Family

ID=39719737

Family Applications (2)

Application Number Title Priority Date Filing Date
NL2001369A NL2001369C2 (nl) 2007-03-29 2008-03-13 Werkwijze voor maskerloze deeltjesbundelbelichting.
NL2004846A NL2004846C2 (nl) 2007-03-29 2010-06-08 Werkwijze voor maskerloze deeltjesbundelbelichting.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL2004846A NL2004846C2 (nl) 2007-03-29 2010-06-08 Werkwijze voor maskerloze deeltjesbundelbelichting.

Country Status (4)

Country Link
US (2) US7777201B2 (nl)
JP (2) JP4987771B2 (nl)
DE (1) DE102008015305A1 (nl)
NL (2) NL2001369C2 (nl)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2001369C2 (nl) * 2007-03-29 2010-06-14 Ims Nanofabrication Ag Werkwijze voor maskerloze deeltjesbundelbelichting.
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
EP2187427B1 (en) 2008-11-17 2011-10-05 IMS Nanofabrication AG Method for maskless particle-beam exposure
EP2190003B1 (en) * 2008-11-20 2014-10-01 IMS Nanofabrication AG Constant current multi-beam patterning
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US8546767B2 (en) 2010-02-22 2013-10-01 Ims Nanofabrication Ag Pattern definition device with multiple multibeam array
JP2011199279A (ja) 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
JP5683227B2 (ja) * 2010-11-19 2015-03-11 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5386544B2 (ja) * 2011-06-07 2014-01-15 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP5977941B2 (ja) 2011-12-19 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
TWI524461B (zh) * 2012-02-14 2016-03-01 愛發科股份有限公司 離子束照射裝置
JP6014342B2 (ja) 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6128744B2 (ja) * 2012-04-04 2017-05-17 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
US8907280B1 (en) 2012-09-19 2014-12-09 Sandia Corporation Fast electron microscopy via compressive sensing
JP6215586B2 (ja) * 2012-11-02 2017-10-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
EP2757571B1 (en) * 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
JP6653125B2 (ja) 2014-05-23 2020-02-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
JP6353278B2 (ja) 2014-06-03 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9653446B1 (en) 2016-04-04 2017-05-16 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
JP6863814B2 (ja) 2017-04-28 2021-04-21 日本たばこ産業株式会社 パッケージ
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US20190066972A1 (en) * 2017-08-29 2019-02-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device
EP3460825B1 (en) 2017-09-18 2020-02-19 IMS Nanofabrication GmbH Method for irradiating a target using restricted placement grids
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10534115B1 (en) * 2017-09-22 2020-01-14 Facebook Technologies, Llc Gray-tone electron-beam lithography
TWI737937B (zh) * 2017-10-02 2021-09-01 荷蘭商Ａｓｍｌ荷蘭公司 使用帶電粒子束之設備
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11220028B1 (en) 2018-03-08 2022-01-11 Facebook Technologies, Llc Method of manufacture for thin, multi-bend optics by compression molding
US10976483B2 (en) 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20200128363A (ko) 2019-05-03 2020-11-12 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
JP7316127B2 (ja) 2019-07-10 2023-07-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP7458817B2 (ja) 2020-02-18 2024-04-01 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7421364B2 (ja) 2020-02-18 2024-01-24 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
US11709422B2 (en) 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875414A (en) * 1973-08-20 1975-04-01 Secr Defence Brit Methods suitable for use in or in connection with the production of microelectronic devices
GB1550867A (en) * 1975-08-04 1979-08-22 Hughes Aircraft Co Positioning method and apparatus for fabricating microcircuit devices
US4199689A (en) * 1977-12-21 1980-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposing method and electron beam apparatus
JPS5633830A (en) * 1979-08-29 1981-04-04 Fujitsu Ltd Detecting method for mark positioning by electron beam
US4385238A (en) * 1981-03-03 1983-05-24 Veeco Instruments Incorporated Reregistration system for a charged particle beam exposure system
US4528452A (en) * 1982-12-09 1985-07-09 Electron Beam Corporation Alignment and detection system for electron image projectors
JPS60201626A (ja) * 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4985634A (en) * 1988-06-02 1991-01-15 Oesterreichische Investitionskredit Aktiengesellschaft And Ionen Mikrofabrications Ion beam lithography
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
JP2751717B2 (ja) * 1991-03-13 1998-05-18 富士通株式会社 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
EP0669636A1 (en) * 1994-02-25 1995-08-30 AT&T Corp. Manufacturing system error detection
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
US5841145A (en) * 1995-03-03 1998-11-24 Fujitsu Limited Method of and system for exposing pattern on object by charged particle beam
US5929454A (en) 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them
JPH10163088A (ja) * 1996-11-28 1998-06-19 Sony Corp アライメント方法，露光マスク及び電子ビーム露光装置
JPH10294255A (ja) * 1997-04-17 1998-11-04 Canon Inc 電子ビーム照明装置、および該電子ビーム照明装置を備えた露光装置
DE69811200T2 (de) * 1997-07-22 2003-10-09 Nippon Steel Corp Einsatzstahl mit hervorragender verhinderung der sekundärrekristallisation während der aufkohlung, verfahren zu dessen herstellung, halbzeug für aufzukohlende teile
US6989546B2 (en) * 1998-08-19 2006-01-24 Ims-Innenmikrofabrikations Systeme Gmbh Particle multibeam lithography
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
JP2001168018A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。
WO2001060456A1 (en) * 2000-02-19 2001-08-23 Ion Diagnostics, Inc. Multi-beam multi-column electron beam inspection system
US6661015B2 (en) * 2000-09-15 2003-12-09 Ims-Ionen Mikrofabrikations Systeme Gmbh Pattern lock system
EP1271606A1 (en) * 2000-11-02 2003-01-02 Ebara Corporation Electron beam apparatus and device production method using the apparatus
JP4401557B2 (ja) * 2000-11-15 2010-01-20 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム補正方法、電子ビーム露光方法、及び半導体素子製造方法
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
GB2413694A (en) * 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
US6872953B1 (en) * 2004-05-20 2005-03-29 Axcelis Technologies, Inc. Two dimensional stationary beam profile and angular mapping
US7456491B2 (en) * 2004-07-23 2008-11-25 Pilla Subrahmanyam V S Large area electron emission system for application in mask-based lithography, maskless lithography II and microscopy
DE102004052994C5 (de) * 2004-11-03 2010-08-26 Vistec Electron Beam Gmbh Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung
DE102004055149B4 (de) 2004-11-16 2007-07-19 Leica Microsystems Lithography Gmbh Vorrichtung und Verfahren zum Abbilden eines Mehrfach-Partikelstrahls auf ein Substrat
GB2435348B (en) * 2004-11-17 2009-06-24 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
US7598594B2 (en) * 2004-12-20 2009-10-06 Electronics And Telecommunications Research Institute Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
JP2006210455A (ja) * 2005-01-26 2006-08-10 Canon Inc 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
WO2006084298A1 (en) * 2005-02-11 2006-08-17 Ims Nanofabrication Ag Charged-particle exposure apparatus with electrostatic zone plate
JP5154232B2 (ja) * 2005-02-18 2013-02-27 アイエムエス ナノファブリケーション エージー 荷電粒子暴露装置
EP1777728A1 (en) * 2005-10-20 2007-04-25 Carl Zeiss SMS GmbH Lithography system
US7781748B2 (en) * 2006-04-03 2010-08-24 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
JP5241195B2 (ja) * 2006-10-30 2013-07-17 アイエムエス ナノファブリカツィオン アーゲー 荷電粒子露光装置
US7763851B2 (en) * 2006-12-22 2010-07-27 Ims Nanofabrication Ag Particle-beam apparatus with improved wien-type filter
DE102008010123A1 (de) * 2007-02-28 2008-09-04 Ims Nanofabrication Ag Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
NL2001369C2 (nl) * 2007-03-29 2010-06-14 Ims Nanofabrication Ag Werkwijze voor maskerloze deeltjesbundelbelichting.
JP5491704B2 (ja) * 2007-05-14 2014-05-14 イーエムエス ナノファブリカツィオン アーゲー 対向電極アレイ板を有するパターン定義装置
EP2019415B1 (en) * 2007-07-24 2016-05-11 IMS Nanofabrication AG Multi-beam source
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.

Also Published As

Publication number Publication date
JP5284442B2 (ja) 2013-09-11
US20100252733A1 (en) 2010-10-07
JP2008252095A (ja) 2008-10-16
DE102008015305A1 (de) 2008-10-02
US7777201B2 (en) 2010-08-17
US20080237460A1 (en) 2008-10-02
JP2012023411A (ja) 2012-02-02
JP4987771B2 (ja) 2012-07-25
NL2004846A (nl) 2010-07-19
NL2004846C2 (nl) 2010-12-07
US8115183B2 (en) 2012-02-14
NL2001369C2 (nl) 2010-06-14

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