NL1034588A1 - Inrichting voor het belichten met geladen deeltjes. - Google Patents
Inrichting voor het belichten met geladen deeltjes.Info
- Publication number
- NL1034588A1 NL1034588A1 NL1034588A NL1034588A NL1034588A1 NL 1034588 A1 NL1034588 A1 NL 1034588A1 NL 1034588 A NL1034588 A NL 1034588A NL 1034588 A NL1034588 A NL 1034588A NL 1034588 A1 NL1034588 A1 NL 1034588A1
- Authority
- NL
- Netherlands
- Prior art keywords
- exposing
- charged particles
- charged
- particles
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0456—Supports
- H01J2237/0458—Supports movable, i.e. for changing between differently sized apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
- H01J2237/0835—Variable cross-section or shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT18222006 | 2006-10-30 | ||
AT18222006 | 2006-10-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1034588A1 true NL1034588A1 (nl) | 2008-05-06 |
NL1034588C2 NL1034588C2 (nl) | 2010-09-21 |
Family
ID=39329005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1034588A NL1034588C2 (nl) | 2006-10-30 | 2007-10-29 | Inrichting voor het belichten met geladen deeltjes. |
Country Status (3)
Country | Link |
---|---|
US (1) | US7598499B2 (nl) |
JP (1) | JP5241195B2 (nl) |
NL (1) | NL1034588C2 (nl) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7872236B2 (en) * | 2007-01-30 | 2011-01-18 | Hermes Microvision, Inc. | Charged particle detection devices |
NL2001369C2 (nl) * | 2007-03-29 | 2010-06-14 | Ims Nanofabrication Ag | Werkwijze voor maskerloze deeltjesbundelbelichting. |
KR100914299B1 (ko) * | 2008-01-02 | 2009-08-28 | 주식회사 하이닉스반도체 | 전자빔 노광 장비 |
JP5480496B2 (ja) * | 2008-03-25 | 2014-04-23 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
US7960697B2 (en) * | 2008-10-23 | 2011-06-14 | Hermes-Microvision, Inc. | Electron beam apparatus |
US7919760B2 (en) * | 2008-12-09 | 2011-04-05 | Hermes-Microvision, Inc. | Operation stage for wafer edge inspection and review |
US8094924B2 (en) * | 2008-12-15 | 2012-01-10 | Hermes-Microvision, Inc. | E-beam defect review system |
EP2228817B1 (en) * | 2009-03-09 | 2012-07-18 | IMS Nanofabrication AG | Global point spreading function in multi-beam patterning |
WO2011055521A1 (ja) * | 2009-11-06 | 2011-05-12 | 株式会社日立ハイテクノロジーズ | 荷電粒子顕微鏡 |
TWI489222B (zh) * | 2012-02-16 | 2015-06-21 | Nuflare Technology Inc | Electron beam rendering device and electron beam rendering method |
EP2913838B1 (en) | 2014-02-28 | 2018-09-19 | IMS Nanofabrication GmbH | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
EP2937889B1 (en) * | 2014-04-25 | 2017-02-15 | IMS Nanofabrication AG | Multi-beam tool for cutting patterns |
EP3358599B1 (en) | 2014-05-30 | 2021-01-27 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using row calibration |
JP6892214B2 (ja) | 2014-07-10 | 2021-06-23 | アイエムエス ナノファブリケーション ゲーエムベーハー | 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化 |
JP6356538B2 (ja) | 2014-08-27 | 2018-07-11 | 株式会社アドバンテスト | 露光装置 |
US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
EP3096342B1 (en) | 2015-03-18 | 2017-09-20 | IMS Nanofabrication AG | Bi-directional double-pass multi-beam writing |
US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
US10192708B2 (en) * | 2015-11-20 | 2019-01-29 | Oregon Physics, Llc | Electron emitter source |
JP6581520B2 (ja) * | 2016-02-09 | 2019-09-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
IL294401A (en) | 2020-01-06 | 2022-08-01 | Asml Netherlands Bv | Charged particle evaluation tool, test method |
KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
DE102020124307A1 (de) | 2020-09-17 | 2022-03-17 | Carl Zeiss Smt Gmbh | Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren |
WO2022058252A1 (en) * | 2020-09-17 | 2022-03-24 | Asml Netherlands B.V. | Objective lens array assembly, electron-optical system, electron-optical system array, method of focusing, objective lens arrangement |
JP2024501654A (ja) * | 2020-12-23 | 2024-01-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 荷電粒子光学デバイス |
EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1241371A (en) * | 1969-04-16 | 1971-08-04 | Ti Group Services Ltd | Apparatus for electron beam irradiation |
JPS5780730A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor observing device |
EP0312653A1 (en) * | 1987-10-22 | 1989-04-26 | Koninklijke Philips Electronics N.V. | Electron image projector |
US4985634A (en) * | 1988-06-02 | 1991-01-15 | Oesterreichische Investitionskredit Aktiengesellschaft And Ionen Mikrofabrications | Ion beam lithography |
JPH0628993A (ja) * | 1992-07-10 | 1994-02-04 | Fujitsu Ltd | 電子ビーム装置 |
JPH0661126A (ja) * | 1992-08-05 | 1994-03-04 | Fujitsu Ltd | 電子ビーム装置及びオリフィス形成方法 |
JPH09245716A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 電子ビーム描画方法および描画装置およびこれを用いた半導体集積回路 |
JP3457874B2 (ja) * | 1998-01-07 | 2003-10-20 | 東芝機械株式会社 | 電子ビーム描画装置 |
US6232040B1 (en) * | 1999-05-06 | 2001-05-15 | Agere Systems, Inc. | Method of electron beam exposure utilizing emitter with conductive mesh grid |
WO2002041354A1 (en) * | 2000-11-16 | 2002-05-23 | Koninklijke Philips Electronics N.V. | Multi-beam lithography apparatus provided with a differential vacuum system |
JP2002170760A (ja) * | 2000-12-01 | 2002-06-14 | Nikon Corp | 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法 |
WO2003017317A1 (en) * | 2001-08-13 | 2003-02-27 | Mapper Lithography Ip B.V. | Lithography system comprising a protected converter plate |
US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
GB2408143B (en) * | 2003-10-20 | 2006-11-15 | Ims Nanofabrication Gmbh | Charged-particle multi-beam exposure apparatus |
EP1851784B8 (en) * | 2005-02-11 | 2016-10-19 | IMS Nanofabrication AG | Charged-particle exposure apparatus with electrostatic zone plate |
WO2006086815A2 (en) * | 2005-02-18 | 2006-08-24 | Ims Nanofabrication Ag | Charged-particle exposure apparatus |
EP2019415B1 (en) * | 2007-07-24 | 2016-05-11 | IMS Nanofabrication AG | Multi-beam source |
-
2007
- 2007-10-23 JP JP2007275422A patent/JP5241195B2/ja active Active
- 2007-10-29 NL NL1034588A patent/NL1034588C2/nl active Search and Examination
- 2007-10-30 US US11/978,661 patent/US7598499B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7598499B2 (en) | 2009-10-06 |
NL1034588C2 (nl) | 2010-09-21 |
US20080099693A1 (en) | 2008-05-01 |
JP5241195B2 (ja) | 2013-07-17 |
JP2008112999A (ja) | 2008-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
PD | Change of ownership |
Owner name: IMS NANOFABRICATION GMBH; AT Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), CHANGE OF LEGAL ENTITY; FORMER OWNER NAME: IMS NANOFABRICATION AG Effective date: 20171214 |