NL1028105A1 - Inrichting voor het detecteren van ioniserende straling. - Google Patents

Inrichting voor het detecteren van ioniserende straling.

Info

Publication number
NL1028105A1
NL1028105A1 NL1028105A NL1028105A NL1028105A1 NL 1028105 A1 NL1028105 A1 NL 1028105A1 NL 1028105 A NL1028105 A NL 1028105A NL 1028105 A NL1028105 A NL 1028105A NL 1028105 A1 NL1028105 A1 NL 1028105A1
Authority
NL
Netherlands
Prior art keywords
ionizing radiation
detecting ionizing
detecting
radiation
ionizing
Prior art date
Application number
NL1028105A
Other languages
English (en)
Other versions
NL1028105C2 (nl
Inventor
David Michael Hoffman
Original Assignee
Ge Med Sys Global Tech Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ge Med Sys Global Tech Co Llc filed Critical Ge Med Sys Global Tech Co Llc
Publication of NL1028105A1 publication Critical patent/NL1028105A1/nl
Application granted granted Critical
Publication of NL1028105C2 publication Critical patent/NL1028105C2/nl

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20183Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1446Devices controlled by radiation in a repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14632Wafer-level processed structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14658X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14658X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663Indirect radiation imagers, e.g. using luminescent members
NL1028105A 2004-01-29 2005-01-24 Inrichting voor het detecteren van ioniserende straling. NL1028105C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,984 US7075091B2 (en) 2004-01-29 2004-01-29 Apparatus for detecting ionizing radiation
US70798404 2004-01-29

Publications (2)

Publication Number Publication Date
NL1028105A1 true NL1028105A1 (nl) 2005-08-01
NL1028105C2 NL1028105C2 (nl) 2008-02-25

Family

ID=34749170

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1028105A NL1028105C2 (nl) 2004-01-29 2005-01-24 Inrichting voor het detecteren van ioniserende straling.

Country Status (6)

Country Link
US (1) US7075091B2 (nl)
JP (1) JP4974130B2 (nl)
CN (1) CN1648687A (nl)
DE (1) DE102005003378A1 (nl)
IL (1) IL166392A (nl)
NL (1) NL1028105C2 (nl)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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EP1876955B1 (en) * 2005-04-26 2016-11-23 Koninklijke Philips N.V. Double decker detector for spectral ct
US7582879B2 (en) * 2006-03-27 2009-09-01 Analogic Corporation Modular x-ray measurement system
WO2007117799A2 (en) * 2006-03-30 2007-10-18 Koninklijke Philips Electronics, N.V. Radiation detector array
US20080001246A1 (en) * 2006-05-24 2008-01-03 Dipak Sengupta Single package detector and digital converter integration
DE102006046770A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Bauelement, Bauteil und Verfahren zu dessen Herstellung
US7606346B2 (en) * 2007-01-04 2009-10-20 General Electric Company CT detector module construction
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
RU2536773C2 (ru) * 2009-03-26 2014-12-27 Конинклейке Филипс Электроникс Н.В. Сбор информации
JP5450188B2 (ja) * 2010-03-16 2014-03-26 株式会社東芝 放射線検出装置、放射線検出装置の製造方法および画像撮影装置
JP5358509B2 (ja) * 2010-04-15 2013-12-04 浜松ホトニクス株式会社 放射線検出器モジュール
US9022584B2 (en) * 2010-11-24 2015-05-05 Raytheon Company Protecting an optical surface
US9281422B2 (en) 2011-03-24 2016-03-08 Koninklijke Philips N.V. Spectral imaging detector
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
JP6243518B2 (ja) 2013-05-16 2017-12-06 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. イメージング検出器
WO2015032865A1 (en) * 2013-09-05 2015-03-12 Koninklijke Philips N.V. Radiation detector element
JP6776024B2 (ja) * 2016-06-30 2020-10-28 キヤノンメディカルシステムズ株式会社 X線検出器、x線検出器モジュール、支持部材及びx線ct装置
CN109541668B (zh) * 2018-12-03 2020-05-22 西安交通大学 一种无电源辐射监测装置及方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294760A (ja) * 1999-04-07 2000-10-20 Nikon Corp 光検出素子
US6512809B2 (en) * 2000-05-02 2003-01-28 Siemens Aktiengesellschaft Radiation detector for an X-ray computed tomography apparatus
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 3次元画像処理装置の製造方法
US6658082B2 (en) * 2000-08-14 2003-12-02 Kabushiki Kaisha Toshiba Radiation detector, radiation detecting system and X-ray CT apparatus
US6426991B1 (en) * 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
JP2003017676A (ja) * 2001-04-27 2003-01-17 Canon Inc 放射線撮像装置およびそれを用いた放射線撮像システム
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6707046B2 (en) 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
JP4237966B2 (ja) * 2002-03-08 2009-03-11 浜松ホトニクス株式会社 検出器
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
DE10244177A1 (de) * 2002-09-23 2004-04-08 Siemens Ag Bilddetektor für Röntgeneinrichtungen mit rückseitig kontaktierten, organischen Bild-Sensoren
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods

Also Published As

Publication number Publication date
IL166392A (en) 2009-07-20
US7075091B2 (en) 2006-07-11
CN1648687A (zh) 2005-08-03
JP4974130B2 (ja) 2012-07-11
JP2005229110A (ja) 2005-08-25
IL166392A0 (en) 2006-01-15
DE102005003378A1 (de) 2005-08-11
NL1028105C2 (nl) 2008-02-25
US20050167603A1 (en) 2005-08-04

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20071016

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20090801