DE602005016740D1 - Elektronenstrahlbelichtungsapparat - Google Patents

Elektronenstrahlbelichtungsapparat

Info

Publication number
DE602005016740D1
DE602005016740D1 DE602005016740T DE602005016740T DE602005016740D1 DE 602005016740 D1 DE602005016740 D1 DE 602005016740D1 DE 602005016740 T DE602005016740 T DE 602005016740T DE 602005016740 T DE602005016740 T DE 602005016740T DE 602005016740 D1 DE602005016740 D1 DE 602005016740D1
Authority
DE
Germany
Prior art keywords
electron beam
exposure apparatus
beam exposure
electron
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005016740T
Other languages
English (en)
Inventor
Shinji Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602005016740D1 publication Critical patent/DE602005016740D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/023—Means for mechanically adjusting components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0216—Means for avoiding or correcting vibration effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H01J2237/0245—Moving whole optical system relatively to object

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE602005016740T 2004-03-16 2005-03-08 Elektronenstrahlbelichtungsapparat Active DE602005016740D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004074209A JP2005268268A (ja) 2004-03-16 2004-03-16 電子ビーム露光装置

Publications (1)

Publication Number Publication Date
DE602005016740D1 true DE602005016740D1 (de) 2009-11-05

Family

ID=34836507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005016740T Active DE602005016740D1 (de) 2004-03-16 2005-03-08 Elektronenstrahlbelichtungsapparat

Country Status (4)

Country Link
US (1) US7230257B2 (de)
EP (1) EP1577929B1 (de)
JP (1) JP2005268268A (de)
DE (1) DE602005016740D1 (de)

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JP4801996B2 (ja) * 2006-01-05 2011-10-26 株式会社ニューフレアテクノロジー 試料移動機構及び荷電粒子ビーム描画装置
GB2442805B (en) * 2006-10-12 2009-04-08 Vistec Lithography Ltd Reduction in stage movement reaction force in an electron beam lithography machine
TWI468879B (zh) * 2008-08-18 2015-01-11 Mapper Lithography Ip Bv 帶電粒子射束微影系統以及目標物定位裝置
US8796644B2 (en) 2008-08-18 2014-08-05 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device
JP5090392B2 (ja) * 2009-03-17 2012-12-05 株式会社日立ハイテクノロジーズ ステージ装置
JP5364462B2 (ja) * 2009-06-19 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2011043391A1 (ja) * 2009-10-07 2011-04-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5489690B2 (ja) * 2009-12-15 2014-05-14 キヤノン株式会社 干渉測定装置
US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
JP5783811B2 (ja) * 2010-07-06 2015-09-24 キヤノン株式会社 成膜装置
US8445862B2 (en) * 2010-12-14 2013-05-21 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US8294095B2 (en) * 2010-12-14 2012-10-23 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
JP5653229B2 (ja) * 2011-01-18 2015-01-14 キヤノン株式会社 ベローズ機構
CN102866586B (zh) * 2011-07-05 2015-04-15 上海微电子装备有限公司 一种光刻机设备系统及其测量方法
JP2013021044A (ja) * 2011-07-08 2013-01-31 Canon Inc 荷電粒子線描画装置、および、物品の製造方法
WO2013036125A1 (en) 2011-09-09 2013-03-14 Mapper Lithography Ip B.V. Projection system with flexible coupling
KR102026936B1 (ko) * 2013-03-26 2019-10-01 삼성디스플레이 주식회사 주사 전자 현미경을 이용한 검사 시스템
TWI661471B (zh) * 2013-12-13 2019-06-01 日商荏原製作所股份有限公司 真空容器之基座的設置構造
CN104751931A (zh) * 2013-12-31 2015-07-01 上海长园电子材料有限公司 辐照电子束下小车装置
JP6257455B2 (ja) * 2014-06-17 2018-01-10 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入装置の制御方法
JP6604704B2 (ja) * 2014-12-22 2019-11-13 アプライド マテリアルズ インコーポレイテッド 基板の検査装置、基板の検査方法、大面積基板検査装置、及びその操作方法
EP3163597A1 (de) * 2015-11-02 2017-05-03 FEI Company Ladungsträgerteilchenmikroskop mit schwingungserfassung/korrektur
JP6633986B2 (ja) * 2016-07-20 2020-01-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2018045958A (ja) * 2016-09-16 2018-03-22 東レエンジニアリング株式会社 撮像装置および電子線照射装置
JP6990296B2 (ja) * 2017-09-04 2022-01-12 エーエスエムエル ネザーランズ ビー．ブイ． 電子ビーム検査装置のステージ位置決め
JP7292968B2 (ja) * 2019-05-14 2023-06-19 株式会社ニューフレアテクノロジー 荷電粒子ビーム装置
EP3742471A1 (de) * 2019-05-24 2020-11-25 ASML Netherlands B.V. Antischleifmechanismus für objektträger zur verbesserung der lebensdauer von wälzlagern
JP7337766B2 (ja) * 2020-09-18 2023-09-04 株式会社Ｓｃｒｅｅｎホールディングス 真空処理装置
JP2022050918A (ja) * 2020-09-18 2022-03-31 株式会社Ｓｃｒｅｅｎホールディングス 真空処理装置
US11094499B1 (en) * 2020-10-04 2021-08-17 Borries Pte. Ltd. Apparatus of charged-particle beam such as electron microscope comprising sliding specimen table within objective lens
KR102481390B1 (ko) * 2020-10-14 2022-12-23 부산대학교 산학협력단 박막의 원자층 제어를 위한 rf 스퍼터링 장치
CN118318284A (zh) * 2021-11-29 2024-07-09 Asml荷兰有限公司 用于带电粒子装置的平台以及带电粒子装置内的部件

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458778A (en) * 1971-04-28 1976-12-15 Decca Ltd Electron beam recording of signals on thermoplastic film
US5185530A (en) 1990-11-05 1993-02-09 Jeol Ltd. Electron beam instrument
JP2856544B2 (ja) 1990-11-26 1999-02-10 日本電子株式会社 電子ビーム装置
JPH0574695A (ja) 1991-09-17 1993-03-26 Hitachi Ltd 電子線描画装置
US5508518A (en) 1995-05-03 1996-04-16 International Business Machines Corporation Lithography tool with vibration isolation
JPH08320570A (ja) 1995-05-25 1996-12-03 Hitachi Ltd 電子線描画装置
JP3647128B2 (ja) 1996-03-04 2005-05-11 キヤノン株式会社 電子ビーム露光装置とその露光方法
US5834783A (en) * 1996-03-04 1998-11-10 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
JP3827359B2 (ja) 1996-03-19 2006-09-27 富士通株式会社 荷電粒子ビーム露光方法及びその装置
JPH11111598A (ja) 1997-10-03 1999-04-23 Toshiba Corp 加工方法、加工装置及び電子ビーム描画装置
US6538719B1 (en) * 1998-09-03 2003-03-25 Nikon Corporation Exposure apparatus and exposure method, and device and method for producing the same
JP2002175770A (ja) 2000-12-08 2002-06-21 Hitachi Ltd 気体排気用試料室及びそれを用いた回路パターン形成装置
JP2002176761A (ja) * 2000-12-08 2002-06-21 Canon Inc リニアモータ及び該リニアモータを用いた露光装置
JP2002260566A (ja) * 2001-02-27 2002-09-13 Kyocera Corp 荷電ビーム装置
US6695426B2 (en) * 2002-02-11 2004-02-24 Lexmark International, Inc. Ink jet printer improved dot placement technique
JP2003288856A (ja) * 2002-03-28 2003-10-10 Jeol Ltd 荷電粒子ビーム装置
JP3862639B2 (ja) * 2002-08-30 2006-12-27 キヤノン株式会社 露光装置
JP2004152902A (ja) * 2002-10-29 2004-05-27 Canon Inc 位置決め装置
US20040142715A1 (en) 2003-01-16 2004-07-22 Oses David Puig Method and apparatus to predictively regulate forward link packet data transmission power in a wireless communications system

Also Published As

Publication number Publication date
EP1577929A3 (de) 2006-10-11
US7230257B2 (en) 2007-06-12
EP1577929B1 (de) 2009-09-23
EP1577929A2 (de) 2005-09-21
US20050205809A1 (en) 2005-09-22
JP2005268268A (ja) 2005-09-29

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