DE602006016378D1 - Extrem-UV-Strahlungsquelle - Google Patents

Extrem-UV-Strahlungsquelle

Info

Publication number
DE602006016378D1
DE602006016378D1 DE602006016378T DE602006016378T DE602006016378D1 DE 602006016378 D1 DE602006016378 D1 DE 602006016378D1 DE 602006016378 T DE602006016378 T DE 602006016378T DE 602006016378 T DE602006016378 T DE 602006016378T DE 602006016378 D1 DE602006016378 D1 DE 602006016378D1
Authority
DE
Germany
Prior art keywords
extreme
radiation source
radiation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016378T
Other languages
English (en)
Inventor
Hironobu Yabuta
Taku Sumitomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of DE602006016378D1 publication Critical patent/DE602006016378D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • X-Ray Techniques (AREA)
DE602006016378T 2005-07-21 2006-07-21 Extrem-UV-Strahlungsquelle Active DE602006016378D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005211982A JP4710463B2 (ja) 2005-07-21 2005-07-21 極端紫外光発生装置

Publications (1)

Publication Number Publication Date
DE602006016378D1 true DE602006016378D1 (de) 2010-10-07

Family

ID=37114436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016378T Active DE602006016378D1 (de) 2005-07-21 2006-07-21 Extrem-UV-Strahlungsquelle

Country Status (6)

Country Link
US (1) US7479645B2 (de)
EP (1) EP1746865B1 (de)
JP (1) JP4710463B2 (de)
KR (1) KR100893817B1 (de)
DE (1) DE602006016378D1 (de)
TW (1) TW200705460A (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
JP4888046B2 (ja) 2006-10-26 2012-02-29 ウシオ電機株式会社 極端紫外光光源装置
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
JP5108367B2 (ja) * 2007-04-27 2012-12-26 ギガフォトン株式会社 極端紫外光源装置
DE102007033701A1 (de) * 2007-07-14 2009-01-22 Xtreme Technologies Gmbh Verfahren und Anordnung zur Reinigung von optischen Oberflächen in plasmabasierten Strahlungsquellen
KR101495208B1 (ko) * 2007-08-23 2015-02-25 에이에스엠엘 네델란즈 비.브이. 극자외 방사선을 생성하는 방법 및 모듈
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
TWI402628B (zh) * 2007-08-31 2013-07-21 Cymer Inc 控管極遠紫外線（ｅｕｖ）光微影裝置腔室間之氣體流動的系統
JP4956825B2 (ja) * 2007-09-28 2012-06-20 国立大学法人名古屋大学 反射鏡、その製造方法、そのクリーニング方法及び光源装置
NL1036153A1 (nl) * 2007-11-08 2009-05-11 Asml Netherlands Bv Method and system for determining a suppression factor of a suppression system and a lithographic apparatus.
KR20100102682A (ko) * 2007-12-27 2010-09-24 에이에스엠엘 네델란즈 비.브이. 극자외 방사선 소스 및 극자외 방사선을 생성하는 방법
US8519367B2 (en) * 2008-07-07 2013-08-27 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a corrosion-resistant material
US8891058B2 (en) * 2008-07-18 2014-11-18 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a contamination captor
EP2157584A3 (de) * 2008-08-14 2011-07-13 ASML Netherlands B.V. Strahlungsquelle, Lithografiegerät und Herstellungsverfahren für ein Bauteil
US20110298376A1 (en) * 2009-01-13 2011-12-08 River Bell Co. Apparatus And Method For Producing Plasma
US8138487B2 (en) * 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
WO2011036248A1 (en) * 2009-09-25 2011-03-31 Asml Netherlands B.V. Source collector apparatus, lithographic apparatus and device manufacturing method
US8872142B2 (en) 2010-03-18 2014-10-28 Gigaphoton Inc. Extreme ultraviolet light generation apparatus
JP5705592B2 (ja) * 2010-03-18 2015-04-22 ギガフォトン株式会社 極端紫外光生成装置
JP5818528B2 (ja) * 2011-06-17 2015-11-18 ギガフォトン株式会社 極端紫外光生成装置
US8368039B2 (en) * 2010-04-05 2013-02-05 Cymer, Inc. EUV light source glint reduction system
WO2014127151A1 (en) 2013-02-14 2014-08-21 Kla-Tencor Corporation System and method for producing an exclusionary buffer gas flow in an euv light source
JP5964400B2 (ja) * 2014-12-04 2016-08-03 ギガフォトン株式会社 極端紫外光源装置及びそのターゲット供給システム
DE102017207030A1 (de) * 2017-04-26 2018-10-31 Carl Zeiss Smt Gmbh Verfahren zur Reinigung von optischen Elementen für den ultravioletten Wellenlängenbereich
US10656539B2 (en) 2017-11-21 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source for lithography process
CN111712765A (zh) * 2018-02-13 2020-09-25 Asml荷兰有限公司 清洁euv腔室中的结构表面
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention
JP7340005B2 (ja) 2019-03-08 2023-09-06 ギガフォトン株式会社 スズトラップ装置、極端紫外光生成装置、及び電子デバイスの製造方法
KR20210023535A (ko) 2019-08-23 2021-03-04 삼성전자주식회사 타겟 잔해물 수집 장치 및 이를 포함하는 극자외선 광원 장치
JP7156331B2 (ja) * 2020-05-15 2022-10-19 ウシオ電機株式会社 極端紫外光光源装置
KR20220044006A (ko) * 2020-09-29 2022-04-06 삼성전자주식회사 극자외선 광원 시스템
CN118577895B (zh) * 2024-08-07 2024-10-15 福建粒量科技有限公司 一种cob-led模组流水线用的除锡装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2195070B (en) * 1986-09-11 1991-04-03 Hoya Corp Laser plasma x-ray generator capable of continuously generating x-rays
JPH10221499A (ja) 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
JP2000091095A (ja) * 1998-09-14 2000-03-31 Nikon Corp Ｘ線発生装置
EP1232516A4 (de) * 1999-10-27 2003-03-12 Jmar Res Inc Verfahren und strahlerzeugungsvorrichtung mittels mikrotargets
TW518913B (en) 2000-07-03 2003-01-21 Asml Netherlands Bv Radiation source, lithographic apparatus, and semiconductor device manufacturing method
EP1329772B1 (de) 2001-12-28 2009-03-25 ASML Netherlands B.V. Lithographischer Projektionsapparat und Verfahren zur Herstellung eines Artikels
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP4052155B2 (ja) 2003-03-17 2008-02-27 ウシオ電機株式会社 極端紫外光放射源及び半導体露光装置
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
JP2005015182A (ja) 2003-06-27 2005-01-20 Hitachi Plant Eng & Constr Co Ltd チェンの異常検出装置
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法

Also Published As

Publication number Publication date
KR100893817B1 (ko) 2009-04-20
TW200705460A (en) 2007-02-01
KR20070012199A (ko) 2007-01-25
JP2007035660A (ja) 2007-02-08
EP1746865A2 (de) 2007-01-24
EP1746865A3 (de) 2009-08-26
EP1746865B1 (de) 2010-08-25
US7479645B2 (en) 2009-01-20
JP4710463B2 (ja) 2011-06-29
TWI360137B (de) 2012-03-11
US20070018119A1 (en) 2007-01-25

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