JP5783811B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5783811B2 JP5783811B2 JP2011126928A JP2011126928A JP5783811B2 JP 5783811 B2 JP5783811 B2 JP 5783811B2 JP 2011126928 A JP2011126928 A JP 2011126928A JP 2011126928 A JP2011126928 A JP 2011126928A JP 5783811 B2 JP5783811 B2 JP 5783811B2
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- 230000015572 biosynthetic process Effects 0.000 claims description 37
- 238000013016 damping Methods 0.000 claims description 28
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 21
- 229910001018 Cast iron Inorganic materials 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 5
- 229920002165 CarbonCast Polymers 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- 229910017773 Cu-Zn-Al Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 143
- 239000000463 material Substances 0.000 description 33
- 238000007740 vapor deposition Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 15
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- 238000010586 diagram Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
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- 238000005019 vapor deposition process Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017881 Cu—Ni—Fe Inorganic materials 0.000 description 1
- 229910001141 Ductile iron Inorganic materials 0.000 description 1
- 229910001060 Gray iron Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical group [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0216—Means for avoiding or correcting vibration effects
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
前記成膜室の室外に設けられている支持体と、
前記支持体上に設けられ、前記基板支持体の位置調整手段及び前記マスク支持体の位置調整手段の少なくとも一方と、アライメント用のカメラと、を備えるアライメント機構と、から構成され、
前記支持体が、前記アライメント機構を載置する支持板と、一端が前記支持板に接し他端が前記成膜室の天板に接する脚部と、を有し、
前記支持板が、前記脚部により前記成膜室の天板と離間して設けられており、
前記支持板の少なくとも一部が、制振合金で構成されていることを特徴とする。
本発明の成膜装置の第二の態様は、基板支持体と、マスク支持体と、を室内に備える成膜室と、
前記成膜室の室外に設けられている支持体と、
前記支持体上に設けられ、前記基板支持体の位置調整手段及び前記マスク支持体の位置調整手段の少なくとも一方と、アライメント用のカメラと、を備えるアライメント機構と、から構成され、
前記支持体が、前記アライメント機構を載置する支持板と、一端が前記支持板に接し他端が前記成膜室の設置面に接する脚部と、を有し、
前記支持板が、前記脚部により前記成膜室の天板と離間して設けられており、
前記支持板の少なくとも一部が、制振合金で構成されていることを特徴とする。
図1の成膜装置を用いてガラス基板上に有機EL素子を製造した。まず蒸着源15中に公知の発光材料を配置し、成膜室10内には基板11を成膜面が下向きになるように設置した。
図4に示される成膜装置を用いてガラス基板上に有機EL素子を製造した。
図5に示される成膜装置を用いてガラス基板上に有機EL素子を製造した。図4の成膜装置100は、成膜室の天板10a上に直接カメラ32、マスク支持体114の位置調整手段(不図示)、基板支持体112の位置調整手段(不図示)を有するアライメント機構30を設けており、用いたマスク、基板のその他の条件は、実施例1と同様とした。
Claims (8)
- 基板支持体と、マスク支持体と、を室内に備える成膜室と、
前記成膜室の室外に設けられている支持体と、
前記支持体上に設けられ、前記基板支持体の位置調整手段及び前記マスク支持体の位置調整手段の少なくとも一方と、アライメント用のカメラと、を備えるアライメント機構と、から構成され、
前記支持体が、前記アライメント機構を載置する支持板と、一端が前記支持板に接し他端が前記成膜室の天板に接する脚部と、を有し、
前記支持板が、前記脚部により前記成膜室の天板と離間して設けられており、
前記支持板の少なくとも一部が、制振合金で構成されていることを特徴とする、成膜装置。 - 基板支持体と、マスク支持体と、を室内に備える成膜室と、
前記成膜室の室外に設けられている支持体と、
前記支持体上に設けられ、前記基板支持体の位置調整手段及び前記マスク支持体の位置調整手段の少なくとも一方と、アライメント用のカメラと、を備えるアライメント機構と、から構成され、
前記支持体が、前記アライメント機構を載置する支持板と、一端が前記支持板に接し他端が前記成膜室の設置面に接する脚部と、を有し、
前記支持板が、前記脚部により前記成膜室の天板と離間して設けられており、
前記支持板の少なくとも一部が、制振合金で構成されていることを特徴とする、成膜装置。 - 前記脚部の一端が、前記マスク支持体あるいは前記基板支持体の外周よりも外側において前記支持板と接していることを特徴とする、請求項1又は2に記載の成膜装置。
- 前記脚部の一端が、前記マスク支持体あるいは前記基板支持体の外周よりも外側において前記支持板と接しており、
前記脚部の他端が、前記成膜室の側壁よりも内側において前記成膜室の天板と接していることを特徴とする、請求項1に記載の成膜装置。 - 前記制振合金が、鋳鉄を含むことを特徴とする、請求項1乃至4のいずれか一項に記載の成膜装置。
- 前記制振合金が、Mn−Cu−Al−Fe−Ni系合金、Cu−Zn−Al系合金及びFe−Mn−Cr系合金のいずれかを含むことを特徴とする、請求項1乃至4のいずれか一項に記載の成膜装置。
- 前記脚部の前記成膜室の天板又は前記成膜室の設置面に接する側の端部に、防振体を有することを特徴とする、請求項1乃至6のいずれか一項に記載の成膜装置。
- 前記防振体が、硬質ポーラスセラミックス、高炭素鋳物鉄及び制振合金のいずれかを含むことを特徴とする、請求項7に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011126928A JP5783811B2 (ja) | 2010-07-06 | 2011-06-07 | 成膜装置 |
US13/156,900 US20120006264A1 (en) | 2010-07-06 | 2011-06-09 | Film formation apparatus |
CN201110183672.7A CN102312189B (zh) | 2010-07-06 | 2011-07-01 | 成膜装置 |
KR1020110066639A KR101310642B1 (ko) | 2010-07-06 | 2011-07-06 | 성막장치 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010153692 | 2010-07-06 | ||
JP2010153692 | 2010-07-06 | ||
JP2011126928A JP5783811B2 (ja) | 2010-07-06 | 2011-06-07 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012033468A JP2012033468A (ja) | 2012-02-16 |
JP5783811B2 true JP5783811B2 (ja) | 2015-09-24 |
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JP2011126928A Expired - Fee Related JP5783811B2 (ja) | 2010-07-06 | 2011-06-07 | 成膜装置 |
Country Status (4)
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US (1) | US20120006264A1 (ja) |
JP (1) | JP5783811B2 (ja) |
KR (1) | KR101310642B1 (ja) |
CN (1) | CN102312189B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103205704A (zh) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | 蒸镀用掩模板 |
WO2013112313A1 (en) * | 2012-01-26 | 2013-08-01 | Applied Materials, Inc. | Thermal processing chamber with top substrate support assembly |
KR102017744B1 (ko) * | 2012-12-12 | 2019-10-15 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
JP6250999B2 (ja) * | 2013-09-27 | 2017-12-20 | キヤノントッキ株式会社 | アライメント方法並びにアライメント装置 |
JP6262811B2 (ja) | 2016-07-08 | 2018-01-17 | キヤノントッキ株式会社 | 真空成膜装置 |
JP6298110B2 (ja) | 2016-07-08 | 2018-03-20 | キヤノントッキ株式会社 | マスク支持体、成膜装置及び成膜方法 |
US20200251691A1 (en) * | 2017-03-17 | 2020-08-06 | Applied Materials, Inc. | Apparatus for vacuum processing of a substrate, system for vacuum processing of a substrate, and method for transportation of a substrate carrier and a mask carrier in a vacuum chamber |
JP7000083B2 (ja) * | 2017-09-07 | 2022-01-19 | 芝浦メカトロニクス株式会社 | 成膜装置 |
KR102192025B1 (ko) * | 2017-09-14 | 2020-12-16 | 주식회사 원익아이피에스 | 기판처리장치 |
JP6662840B2 (ja) * | 2017-12-11 | 2020-03-11 | 株式会社アルバック | 蒸着装置 |
JP6662841B2 (ja) * | 2017-12-21 | 2020-03-11 | 株式会社アルバック | 蒸着装置 |
CN110473822B (zh) * | 2018-05-09 | 2021-11-23 | 京东方科技集团股份有限公司 | 对位方法及对位装置、蒸镀设备 |
KR102405438B1 (ko) * | 2018-06-25 | 2022-06-03 | 캐논 톡키 가부시키가이샤 | 마스크 위치조정장치, 성막장치, 마스크 위치조정방법, 성막방법, 및 전자디바이스의 제조방법 |
CN112771688A (zh) * | 2018-10-30 | 2021-05-07 | 应用材料公司 | 基板处理装置 |
JP7118864B2 (ja) | 2018-11-07 | 2022-08-16 | キヤノントッキ株式会社 | 成膜装置、製造システム、有機elパネルの製造システム |
KR102257008B1 (ko) * | 2019-01-11 | 2021-05-26 | 캐논 톡키 가부시키가이샤 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
KR102182471B1 (ko) * | 2019-01-11 | 2020-11-24 | 캐논 톡키 가부시키가이샤 | 성막장치 및 전자 디바이스 제조장치 |
KR102179271B1 (ko) * | 2019-01-11 | 2020-11-16 | 캐논 톡키 가부시키가이샤 | 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법 |
JP7299725B2 (ja) * | 2019-03-15 | 2023-06-28 | キヤノントッキ株式会社 | 成膜装置、成膜システム |
JP7292948B2 (ja) * | 2019-04-24 | 2023-06-19 | キヤノン株式会社 | 基板処理装置および基板処理方法 |
KR20210059549A (ko) * | 2019-11-15 | 2021-05-25 | 캐논 톡키 가부시키가이샤 | 성막장치 |
KR20210061892A (ko) * | 2019-11-20 | 2021-05-28 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 기구, 얼라인먼트 방법, 성막장치 및 성막 방법 |
KR20210061774A (ko) * | 2019-11-20 | 2021-05-28 | 캐논 톡키 가부시키가이샤 | 성막장치 |
KR20200133310A (ko) * | 2020-11-17 | 2020-11-27 | 캐논 톡키 가부시키가이샤 | 성막장치 및 전자 디바이스 제조장치 |
WO2024162773A1 (ko) * | 2023-01-31 | 2024-08-08 | 주식회사 선익시스템 | 기판 증착 장치 및 그 제어방법 |
KR20240120233A (ko) * | 2023-01-31 | 2024-08-07 | 주식회사 선익시스템 | 포스센서가 구비된 기판 증착 장치 및 그 제어방법 |
KR102640435B1 (ko) | 2023-01-31 | 2024-02-23 | 변정훈 | 염수분사 노즐을 구성한 제설판 |
KR20240123991A (ko) * | 2023-02-08 | 2024-08-16 | 주식회사 선익시스템 | 카메라 측정 정밀도를 개선하는 증착 장치 |
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JP3200282B2 (ja) * | 1993-07-21 | 2001-08-20 | キヤノン株式会社 | 処理システム及びこれを用いたデバイス製造方法 |
US5508518A (en) * | 1995-05-03 | 1996-04-16 | International Business Machines Corporation | Lithography tool with vibration isolation |
JP3437406B2 (ja) * | 1997-04-22 | 2003-08-18 | キヤノン株式会社 | 投影露光装置 |
US6654095B1 (en) * | 1999-10-18 | 2003-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP2004205664A (ja) * | 2002-12-24 | 2004-07-22 | Fujitsu Display Technologies Corp | 表示パネルの製造装置 |
JP4190918B2 (ja) * | 2003-03-11 | 2008-12-03 | シャープ株式会社 | 真空処理装置 |
US7061579B2 (en) * | 2003-11-13 | 2006-06-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4596794B2 (ja) * | 2004-02-27 | 2010-12-15 | 日立造船株式会社 | 真空蒸着用アライメント装置 |
JP2005268268A (ja) * | 2004-03-16 | 2005-09-29 | Canon Inc | 電子ビーム露光装置 |
JP4609754B2 (ja) | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | マスククランプの移動機構および成膜装置 |
JP2006246263A (ja) * | 2005-03-04 | 2006-09-14 | Kiko Kenji Kagi Kofun Yugenkoshi | 撮像素子取付け具 |
WO2007023552A1 (ja) * | 2005-08-25 | 2007-03-01 | Hitachi Zosen Corporation | 真空蒸着用アライメント装置 |
CN100549215C (zh) * | 2005-08-25 | 2009-10-14 | 日立造船株式会社 | 真空蒸镀用校准装置 |
JP4624236B2 (ja) * | 2005-10-25 | 2011-02-02 | 日立造船株式会社 | 真空蒸着用アライメント装置 |
KR100810518B1 (ko) | 2006-10-19 | 2008-03-07 | 인하대학교 산학협력단 | 초탄성 형상기억합금을 이용한 댐퍼 |
JP4311582B1 (ja) * | 2008-04-07 | 2009-08-12 | 株式会社アドウェルズ | 共振器の支持装置 |
KR101060652B1 (ko) * | 2008-04-14 | 2011-08-31 | 엘아이지에이디피 주식회사 | 유기물 증착장치 및 이를 이용한 증착 방법 |
JP2010013720A (ja) * | 2008-07-07 | 2010-01-21 | Air Water Inc | 制振金属の製造方法およびそれによって得られた制振金属 |
CN101667630A (zh) * | 2008-09-04 | 2010-03-10 | 株式会社日立高新技术 | 有机el设备制造装置和其制造方法以及成膜装置和成膜方法 |
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- 2011-06-09 US US13/156,900 patent/US20120006264A1/en not_active Abandoned
- 2011-07-01 CN CN201110183672.7A patent/CN102312189B/zh not_active Expired - Fee Related
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KR20120004345A (ko) | 2012-01-12 |
KR101310642B1 (ko) | 2013-09-23 |
CN102312189A (zh) | 2012-01-11 |
CN102312189B (zh) | 2014-02-26 |
JP2012033468A (ja) | 2012-02-16 |
US20120006264A1 (en) | 2012-01-12 |
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