NL1032562A1 - Inrichting voor het onderdrukken van ongewenste spectrumaandelen bij een plasmagebaseerde EUV-stralingsbron. - Google Patents
Inrichting voor het onderdrukken van ongewenste spectrumaandelen bij een plasmagebaseerde EUV-stralingsbron.Info
- Publication number
- NL1032562A1 NL1032562A1 NL1032562A NL1032562A NL1032562A1 NL 1032562 A1 NL1032562 A1 NL 1032562A1 NL 1032562 A NL1032562 A NL 1032562A NL 1032562 A NL1032562 A NL 1032562A NL 1032562 A1 NL1032562 A1 NL 1032562A1
- Authority
- NL
- Netherlands
- Prior art keywords
- plasma
- radiation source
- euv radiation
- suppressing unwanted
- based euv
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title 1
- 238000001228 spectrum Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005048670A DE102005048670B3 (de) | 2005-10-07 | 2005-10-07 | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
DE102005048670 | 2005-10-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1032562A1 true NL1032562A1 (nl) | 2007-04-11 |
NL1032562C2 NL1032562C2 (nl) | 2008-02-25 |
Family
ID=37910342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1032562A NL1032562C2 (nl) | 2005-10-07 | 2006-09-22 | Inrichting voor het onderdrukken van ongewenste spectrumaandelen bij een plasmagebaseerde EUV-stralingsbron. |
Country Status (4)
Country | Link |
---|---|
US (1) | US7755070B2 (nl) |
JP (1) | JP4328793B2 (nl) |
DE (1) | DE102005048670B3 (nl) |
NL (1) | NL1032562C2 (nl) |
Families Citing this family (30)
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JP2005268035A (ja) * | 2004-03-18 | 2005-09-29 | Canon Inc | Euv光源の評価用評価装置、およびそれを用いた評価方法 |
DE102007023444B4 (de) * | 2007-05-16 | 2009-04-09 | Xtreme Technologies Gmbh | Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen |
US7816658B2 (en) * | 2007-06-07 | 2010-10-19 | Asml Netherlands B.V. | Extreme ultra-violet lithographic apparatus and device manufacturing method |
TWI402628B (zh) * | 2007-08-31 | 2013-07-21 | Cymer Inc | 控管極遠紫外線(euv)光微影裝置腔室間之氣體流動的系統 |
US8115900B2 (en) * | 2007-09-17 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102007051295B4 (de) * | 2007-10-22 | 2009-08-06 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung von EUV-Strahlung |
NL1036469A1 (nl) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
JP5534647B2 (ja) * | 2008-02-28 | 2014-07-02 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5339742B2 (ja) * | 2008-03-04 | 2013-11-13 | ウシオ電機株式会社 | 極端紫外光が出射する装置と極端紫外光が導入される装置との接続装置 |
US8536551B2 (en) | 2008-06-12 | 2013-09-17 | Gigaphoton Inc. | Extreme ultra violet light source apparatus |
US8013300B2 (en) * | 2008-06-20 | 2011-09-06 | Carl Zeiss Nts, Llc | Sample decontamination |
NL2003181A1 (nl) | 2008-07-14 | 2010-01-18 | Asml Netherlands Bv | A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device. |
KR20110063789A (ko) * | 2008-08-29 | 2011-06-14 | 에이에스엠엘 네델란즈 비.브이. | 스펙트럼 퓨리티 필터, 이러한 스펙트럼 퓨리티 필터를 포함하는 리소그래피 장치 및 디바이스 제조 방법 |
JP5448402B2 (ja) * | 2008-09-29 | 2014-03-19 | ギガフォトン株式会社 | ガスフロー式spfを備えた極端紫外光源装置 |
JP2011054376A (ja) * | 2009-09-01 | 2011-03-17 | Ihi Corp | Lpp方式のeuv光源とその発生方法 |
US20130134318A1 (en) * | 2010-03-25 | 2013-05-30 | Reza Abhari | Beam line for a source of extreme ultraviolet (euv) radiation |
JP2012216743A (ja) * | 2010-06-16 | 2012-11-08 | Gigaphoton Inc | スペクトル純度フィルタ及びそれを備える極端紫外光生成装置 |
JP2013541213A (ja) * | 2010-10-14 | 2013-11-07 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
JP5659711B2 (ja) * | 2010-11-10 | 2015-01-28 | ウシオ電機株式会社 | 極端紫外光光源装置における照度分布の検出方法および極端紫外光光源装置 |
US9155180B1 (en) | 2011-10-10 | 2015-10-06 | Kla-Tencor Corporation | System and method of simultaneously fueling and mitigating debris for a plasma-based illumination source |
US9268031B2 (en) | 2012-04-09 | 2016-02-23 | Kla-Tencor Corporation | Advanced debris mitigation of EUV light source |
KR101344151B1 (ko) * | 2012-04-13 | 2013-12-27 | 주식회사 에프에스티 | 회절 소멸을 응용한 ir 레이저 빔 상쇄 기능을 가지는 euv 광 발생장치 |
DE102012213927A1 (de) * | 2012-08-07 | 2013-06-06 | Carl Zeiss Smt Gmbh | Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit |
US9348214B2 (en) | 2013-02-07 | 2016-05-24 | Kla-Tencor Corporation | Spectral purity filter and light monitor for an EUV reticle inspection system |
US10101664B2 (en) | 2014-11-01 | 2018-10-16 | Kla-Tencor Corporation | Apparatus and methods for optics protection from debris in plasma-based light source |
DE102018200030B3 (de) | 2018-01-03 | 2019-05-09 | Trumpf Laser- Und Systemtechnik Gmbh | Vorrichtung und Verfahren zum Abschwächen oder Verstärken von laserinduzierter Röntgenstrahlung |
KR20210016354A (ko) * | 2018-05-28 | 2021-02-15 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 |
KR102202464B1 (ko) * | 2018-12-17 | 2021-01-14 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN113219794B (zh) * | 2021-05-14 | 2022-06-21 | 中国科学院长春光学精密机械与物理研究所 | 一种具有能量回收功能的极紫外收集镜及其制备方法 |
KR102489207B1 (ko) * | 2021-06-11 | 2023-01-17 | 주식회사 저스템 | 반도체공정시스템 및 반도체공정장치 내 공기막 형성장치 |
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US1969655A (en) * | 1923-09-27 | 1934-08-07 | Gen Electric Vapor Lamp Co | Reaction chamber |
FR1455210A (fr) * | 1965-07-09 | 1966-04-01 | Onera (Off Nat Aerospatiale) | Procédé et appareillage pour l'analyse spectrographique des corps |
US3617928A (en) * | 1968-05-23 | 1971-11-02 | United Aircraft Corp | Aerodynamic window for gas dynamic laser |
US4152049A (en) * | 1977-12-21 | 1979-05-01 | United Technologies Corporation | Spatial filter having aerodynamic windows |
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US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
TWI240151B (en) * | 2000-10-10 | 2005-09-21 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US6597003B2 (en) * | 2001-07-12 | 2003-07-22 | Axcelis Technologies, Inc. | Tunable radiation source providing a VUV wavelength planar illumination pattern for processing semiconductor wafers |
SG103902A1 (en) * | 2001-12-28 | 2004-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10215469B4 (de) * | 2002-04-05 | 2005-03-17 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von Teilchenemission bei einer Strahlungserzeugung auf Basis eines heißen Plasmas |
US6825988B2 (en) * | 2002-09-04 | 2004-11-30 | Intel Corporation | Etched silicon diffraction gratings for use as EUV spectral purity filters |
KR100694572B1 (ko) * | 2003-11-11 | 2007-03-13 | 에이에스엠엘 네델란즈 비.브이. | 오염 억제를 위한 리소그래피 장치, 디바이스 제조방법 및 이에 의해 제조된 디바이스 |
US7030958B2 (en) * | 2003-12-31 | 2006-04-18 | Asml Netherlands B.V. | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
US8094288B2 (en) * | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006080108A (ja) * | 2004-09-07 | 2006-03-23 | Nikon Corp | 露光装置及びマイクロデバイスの製造方法 |
US7598508B2 (en) * | 2005-07-13 | 2009-10-06 | Nikon Corporation | Gaseous extreme-ultraviolet spectral purity filters and optical systems comprising same |
TWI257646B (en) | 2005-09-05 | 2006-07-01 | Innolux Display Corp | Thin film transistor array substrate and method of manufacturing the same |
US20090218521A1 (en) * | 2008-02-08 | 2009-09-03 | Nikon Corporation | Gaseous neutral density filters and related methods |
-
2005
- 2005-10-07 DE DE102005048670A patent/DE102005048670B3/de not_active Expired - Fee Related
-
2006
- 2006-09-22 NL NL1032562A patent/NL1032562C2/nl not_active IP Right Cessation
- 2006-10-04 JP JP2006272884A patent/JP4328793B2/ja not_active Expired - Fee Related
- 2006-10-06 US US11/539,342 patent/US7755070B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4328793B2 (ja) | 2009-09-09 |
US20070080307A1 (en) | 2007-04-12 |
NL1032562C2 (nl) | 2008-02-25 |
DE102005048670B3 (de) | 2007-05-24 |
US7755070B2 (en) | 2010-07-13 |
JP2007129209A (ja) | 2007-05-24 |
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