NL1005963C2 - Verticale oven voor het behandelen van halfgeleidersubstraten. - Google Patents

Verticale oven voor het behandelen van halfgeleidersubstraten. Download PDF

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Publication number
NL1005963C2
NL1005963C2 NL1005963A NL1005963A NL1005963C2 NL 1005963 C2 NL1005963 C2 NL 1005963C2 NL 1005963 A NL1005963 A NL 1005963A NL 1005963 A NL1005963 A NL 1005963A NL 1005963 C2 NL1005963 C2 NL 1005963C2
Authority
NL
Netherlands
Prior art keywords
oven
jacket
spout
vertical
space
Prior art date
Application number
NL1005963A
Other languages
English (en)
Dutch (nl)
Inventor
Christianus Gerardus Ma Ridder
Jacobus Pieter Buijze
Jeroen Jan Stoutjesdijk
Hubertus Johannes Julius Stohr
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Priority to NL1005963A priority Critical patent/NL1005963C2/nl
Priority to US09/214,446 priority patent/US6225602B1/en
Priority to PCT/NL1998/000246 priority patent/WO1998050606A1/fr
Priority to AU74567/98A priority patent/AU7456798A/en
Priority to JP10547935A priority patent/JP2000513878A/ja
Priority to TW087117634A priority patent/TW576878B/zh
Application granted granted Critical
Publication of NL1005963C2 publication Critical patent/NL1005963C2/nl

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519Inert gas curtains
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
NL1005963A 1997-05-02 1997-05-02 Verticale oven voor het behandelen van halfgeleidersubstraten. NL1005963C2 (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL1005963A NL1005963C2 (nl) 1997-05-02 1997-05-02 Verticale oven voor het behandelen van halfgeleidersubstraten.
US09/214,446 US6225602B1 (en) 1997-05-02 1998-05-05 Vertical furnace for the treatment of semiconductor substrates
PCT/NL1998/000246 WO1998050606A1 (fr) 1997-05-02 1998-05-05 Four vertical pour le traitement de substrats semiconducteurs
AU74567/98A AU7456798A (en) 1997-05-02 1998-05-05 Vertical furnace for the treatment of semiconductor substrates
JP10547935A JP2000513878A (ja) 1997-05-02 1998-05-05 半導体基板処理用の縦型炉
TW087117634A TW576878B (en) 1997-05-02 1998-10-23 Vertical furnace for the treatment of semiconductor substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1005963 1997-05-02
NL1005963A NL1005963C2 (nl) 1997-05-02 1997-05-02 Verticale oven voor het behandelen van halfgeleidersubstraten.

Publications (1)

Publication Number Publication Date
NL1005963C2 true NL1005963C2 (nl) 1998-11-09

Family

ID=19764908

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1005963A NL1005963C2 (nl) 1997-05-02 1997-05-02 Verticale oven voor het behandelen van halfgeleidersubstraten.

Country Status (6)

Country Link
US (1) US6225602B1 (fr)
JP (1) JP2000513878A (fr)
AU (1) AU7456798A (fr)
NL (1) NL1005963C2 (fr)
TW (1) TW576878B (fr)
WO (1) WO1998050606A1 (fr)

Families Citing this family (278)

* Cited by examiner, † Cited by third party
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NL1013667C2 (nl) * 1999-11-25 2000-12-15 Asm Int Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal.
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DE10010016C1 (de) * 2000-02-26 2002-01-31 Forsch Applikationslabor Plasm Vorrichtung und Verfahren zur plasmagestützten Oberflächenbehandlung von Substraten im Vakuum
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