MY185549A - Sputtering target having increased power compatibility - Google Patents

Sputtering target having increased power compatibility

Info

Publication number
MY185549A
MY185549A MYPI2015703579A MYPI2015703579A MY185549A MY 185549 A MY185549 A MY 185549A MY PI2015703579 A MYPI2015703579 A MY PI2015703579A MY PI2015703579 A MYPI2015703579 A MY PI2015703579A MY 185549 A MY185549 A MY 185549A
Authority
MY
Malaysia
Prior art keywords
plate
holder
target
sputtering target
increased power
Prior art date
Application number
MYPI2015703579A
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Joerg Kerschbaumer
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of MY185549A publication Critical patent/MY185549A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Packaging For Recording Disks (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Nozzles (AREA)
  • Coating By Spraying Or Casting (AREA)
MYPI2015703579A 2013-04-08 2014-04-07 Sputtering target having increased power compatibility MY185549A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
PCT/EP2014/000927 WO2014166620A1 (de) 2013-04-08 2014-04-07 Sputtertarget mit erhöhter leistungsverträglichkeit

Publications (1)

Publication Number Publication Date
MY185549A true MY185549A (en) 2021-05-19

Family

ID=50486885

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2015703579A MY185549A (en) 2013-04-08 2014-04-07 Sputtering target having increased power compatibility
MYPI2015703578A MY178843A (en) 2013-04-08 2014-04-07 Centering of a plate in a holder both at room temperatures and at higher temperatures

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI2015703578A MY178843A (en) 2013-04-08 2014-04-07 Centering of a plate in a holder both at room temperatures and at higher temperatures

Country Status (21)

Country Link
US (2) US9564300B2 (enExample)
EP (2) EP2984673B1 (enExample)
JP (2) JP6655531B2 (enExample)
KR (2) KR102190319B1 (enExample)
CN (2) CN105210169B (enExample)
AR (2) AR096021A1 (enExample)
BR (2) BR112015025749A2 (enExample)
CA (2) CA2908892C (enExample)
ES (1) ES2675332T3 (enExample)
HK (1) HK1214403A1 (enExample)
HU (1) HUE038784T2 (enExample)
IL (2) IL241979B (enExample)
MX (2) MX350172B (enExample)
MY (2) MY185549A (enExample)
PH (2) PH12015502328B1 (enExample)
PL (1) PL2984674T3 (enExample)
RU (2) RU2665059C2 (enExample)
SG (3) SG11201508324VA (enExample)
TR (1) TR201809526T4 (enExample)
TW (2) TW201443258A (enExample)
WO (2) WO2014166620A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
CN110892502B (zh) 2017-06-01 2022-10-04 欧瑞康表面处理解决方案股份公司普费菲孔 用于脆性材料的安全经济蒸发的靶组件
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
CN110838458B (zh) 2018-08-17 2022-08-09 台湾积体电路制造股份有限公司 半导体制程系统以及方法
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
MX2021007531A (es) * 2018-12-20 2021-08-05 Oerlikon Surface Solutions Ag Pfaeffikon Dispositivo de ignicion de arco catodico.
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
CN115088053A (zh) * 2019-12-13 2022-09-20 瑞士艾发科技 用于pvd源的气环

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (enExample) * 1979-10-31 1982-05-29
EP0393344A1 (de) 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
DE69127636T2 (de) * 1991-01-28 1998-01-22 Materials Research Corp Target für kathodenzerstäubung
DE9102052U1 (de) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo Indirekt gekühlter Verdampfer mit Schnellwechselsystem
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
DE19535894A1 (de) 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4101524B2 (ja) * 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 成膜装置
JP2010116605A (ja) 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Also Published As

Publication number Publication date
RU2665059C2 (ru) 2018-08-28
CA2908897A1 (en) 2014-10-16
EP2984674B1 (de) 2018-06-06
CA2908892C (en) 2021-08-24
RU2015147496A (ru) 2017-05-16
KR20150139555A (ko) 2015-12-11
CA2908892A1 (en) 2014-10-16
BR112015025747A2 (pt) 2017-07-18
US20160064201A1 (en) 2016-03-03
HK1219562A1 (zh) 2017-04-07
MX350171B (es) 2017-08-28
CN105324830B (zh) 2017-08-01
IL241980B (en) 2020-08-31
WO2014166620A1 (de) 2014-10-16
EP2984673B1 (de) 2020-03-11
CA2908897C (en) 2023-03-14
PH12015502328A1 (en) 2016-02-22
HUE038784T2 (hu) 2018-11-28
RU2665058C2 (ru) 2018-08-28
TW201443258A (zh) 2014-11-16
SG10201708186QA (en) 2017-11-29
RU2015147497A (ru) 2017-05-16
PH12015502328B1 (en) 2018-09-26
PH12015502338A1 (en) 2016-02-22
CN105324830A (zh) 2016-02-10
TR201809526T4 (tr) 2018-07-23
MY178843A (en) 2020-10-20
BR112015025749A2 (pt) 2017-07-18
EP2984674A1 (de) 2016-02-17
US20160071706A1 (en) 2016-03-10
IL241979B (en) 2020-07-30
SG11201508311VA (en) 2015-11-27
PH12015502338B1 (en) 2016-02-22
CN105210169B (zh) 2017-04-19
TW201443263A (zh) 2014-11-16
WO2014166621A1 (de) 2014-10-16
JP2016514771A (ja) 2016-05-23
HK1214403A1 (zh) 2016-07-22
KR20150139556A (ko) 2015-12-11
ES2675332T3 (es) 2018-07-10
US9536714B2 (en) 2017-01-03
US9564300B2 (en) 2017-02-07
MX2015014210A (es) 2016-05-05
MX350172B (es) 2017-08-28
AR096021A1 (es) 2015-12-02
EP2984673A1 (de) 2016-02-17
JP6655531B2 (ja) 2020-02-26
KR102234454B1 (ko) 2021-04-01
AR099253A1 (es) 2016-07-13
MX2015014209A (es) 2016-05-10
KR102190319B1 (ko) 2020-12-14
SG11201508324VA (en) 2015-11-27
JP6360884B2 (ja) 2018-07-18
CN105210169A (zh) 2015-12-30
JP2016519719A (ja) 2016-07-07
PL2984674T3 (pl) 2018-10-31

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