HK1219562A1 - 板在室溫和較高溫度下在支座中的定中 - Google Patents
板在室溫和較高溫度下在支座中的定中Info
- Publication number
- HK1219562A1 HK1219562A1 HK16107567.0A HK16107567A HK1219562A1 HK 1219562 A1 HK1219562 A1 HK 1219562A1 HK 16107567 A HK16107567 A HK 16107567A HK 1219562 A1 HK1219562 A1 HK 1219562A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- temperatures
- centering
- holder
- plate
- room
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Telescopes (AREA)
- Magnetic Resonance Imaging Apparatus (AREA)
- Coating By Spraying Or Casting (AREA)
- Packaging For Recording Disks (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Nozzles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361809524P | 2013-04-08 | 2013-04-08 | |
| PCT/EP2014/000928 WO2014166621A1 (de) | 2013-04-08 | 2014-04-07 | Zentrierung einer platte in einer halterung sowohl bei raum- als auch bei höheren temperaturen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1219562A1 true HK1219562A1 (zh) | 2017-04-07 |
Family
ID=50486885
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK16102413.7A HK1214403A1 (zh) | 2013-04-08 | 2016-03-02 | 功率相容性更高的濺射靶 |
| HK16107567.0A HK1219562A1 (zh) | 2013-04-08 | 2016-06-29 | 板在室溫和較高溫度下在支座中的定中 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK16102413.7A HK1214403A1 (zh) | 2013-04-08 | 2016-03-02 | 功率相容性更高的濺射靶 |
Country Status (21)
| Country | Link |
|---|---|
| US (2) | US9536714B2 (zh) |
| EP (2) | EP2984674B1 (zh) |
| JP (2) | JP6655531B2 (zh) |
| KR (2) | KR102234454B1 (zh) |
| CN (2) | CN105324830B (zh) |
| AR (2) | AR096021A1 (zh) |
| BR (2) | BR112015025747A2 (zh) |
| CA (2) | CA2908892C (zh) |
| ES (1) | ES2675332T3 (zh) |
| HK (2) | HK1214403A1 (zh) |
| HU (1) | HUE038784T2 (zh) |
| IL (2) | IL241980B (zh) |
| MX (2) | MX350171B (zh) |
| MY (2) | MY185549A (zh) |
| PH (2) | PH12015502328A1 (zh) |
| PL (1) | PL2984674T3 (zh) |
| RU (2) | RU2665058C2 (zh) |
| SG (3) | SG10201708186QA (zh) |
| TR (1) | TR201809526T4 (zh) |
| TW (2) | TW201443258A (zh) |
| WO (2) | WO2014166620A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10435784B2 (en) | 2016-08-10 | 2019-10-08 | Applied Materials, Inc. | Thermally optimized rings |
| CN110892502B (zh) | 2017-06-01 | 2022-10-04 | 欧瑞康表面处理解决方案股份公司普费菲孔 | 用于脆性材料的安全经济蒸发的靶组件 |
| CN108130516A (zh) * | 2018-01-03 | 2018-06-08 | 梧州三和新材料科技有限公司 | 一种使用泡沫金属增强冷却的真空镀阴极靶 |
| US11600517B2 (en) * | 2018-08-17 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Screwless semiconductor processing chambers |
| BR112021012176A2 (pt) * | 2018-12-20 | 2021-08-31 | Oerlikon Surface Solutions Ag, Pfäffikon | Dispositivo de ignição de arco para deposição de arco catódico de material alvo sobre um substrato, conjuntos de deposição de arco catódico de um material sobre um substrato, método de ignição de arco para deposição de arco catódico de materiais, uso de dispositivo de ignição de arco e uso de conjunto |
| CN110066980A (zh) * | 2019-05-31 | 2019-07-30 | 德淮半导体有限公司 | 环状靶材部件、半导体工艺设备及其工作方法 |
| KR20220116492A (ko) * | 2019-12-13 | 2022-08-23 | 에바텍 아크티엔게젤샤프트 | Pvd-소스용 가스 링 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724890Y2 (zh) * | 1979-10-31 | 1982-05-29 | ||
| EP0393344A1 (de) | 1989-04-20 | 1990-10-24 | Balzers Aktiengesellschaft | Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung |
| DE4015388C2 (de) * | 1990-05-14 | 1997-07-17 | Leybold Ag | Kathodenzerstäubungsvorrichtung |
| AU1151592A (en) * | 1991-01-28 | 1992-08-27 | Materials Research Corporation | Target for cathode sputtering |
| DE9102052U1 (de) * | 1991-02-21 | 1991-06-13 | Hauzer Holding B.V., Venlo | Indirekt gekühlter Verdampfer mit Schnellwechselsystem |
| JP3030921B2 (ja) * | 1991-05-01 | 2000-04-10 | 日新電機株式会社 | イオン源の引出し電極装置 |
| EP0512456B1 (de) * | 1991-05-08 | 1997-06-18 | Balzers Aktiengesellschaft | Verfahren zur Montage bzw. Demontage einer Targetplatte in einem Vakuumprozessraum, Montageanordnung hierfür sowie Targetplatte bzw. Vakuumkammer |
| DE4133564C2 (de) * | 1991-10-10 | 1999-11-18 | Leybold Ag | Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung |
| RU2037559C1 (ru) * | 1992-08-10 | 1995-06-19 | Волин Эрнст Михайлович | Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления |
| GB2318590B (en) * | 1995-07-10 | 1999-04-14 | Cvc Products Inc | Magnetron cathode apparatus and method for sputtering |
| DE19535894A1 (de) * | 1995-09-27 | 1997-04-03 | Leybold Materials Gmbh | Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung |
| US6217832B1 (en) * | 1998-04-30 | 2001-04-17 | Catalytica, Inc. | Support structures for a catalyst |
| JP4251713B2 (ja) * | 1999-05-21 | 2009-04-08 | 株式会社アルバック | スパッタ装置 |
| US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| JP4101524B2 (ja) * | 2002-02-05 | 2008-06-18 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| JP2010116605A (ja) * | 2008-11-13 | 2010-05-27 | Fujikura Ltd | ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法 |
| JP2011165964A (ja) * | 2010-02-10 | 2011-08-25 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| DE102012006717A1 (de) | 2012-04-04 | 2013-10-10 | Oerlikon Trading Ag, Trübbach | An eine indirekte Kühlvorrichtung angepasstes Target |
-
2014
- 2014-04-07 BR BR112015025747A patent/BR112015025747A2/pt not_active IP Right Cessation
- 2014-04-07 MY MYPI2015703579A patent/MY185549A/en unknown
- 2014-04-07 KR KR1020157031126A patent/KR102234454B1/ko active IP Right Grant
- 2014-04-07 CA CA2908892A patent/CA2908892C/en active Active
- 2014-04-07 SG SG10201708186QA patent/SG10201708186QA/en unknown
- 2014-04-07 HU HUE14718509A patent/HUE038784T2/hu unknown
- 2014-04-07 AR ARP140101500A patent/AR096021A1/es unknown
- 2014-04-07 PL PL14718509T patent/PL2984674T3/pl unknown
- 2014-04-07 KR KR1020157031127A patent/KR102190319B1/ko active IP Right Grant
- 2014-04-07 EP EP14718509.4A patent/EP2984674B1/de active Active
- 2014-04-07 MX MX2015014210A patent/MX350171B/es active IP Right Grant
- 2014-04-07 CN CN201480031545.7A patent/CN105324830B/zh not_active Expired - Fee Related
- 2014-04-07 RU RU2015147497A patent/RU2665058C2/ru not_active IP Right Cessation
- 2014-04-07 MX MX2015014209A patent/MX350172B/es active IP Right Grant
- 2014-04-07 TR TR2018/09526T patent/TR201809526T4/tr unknown
- 2014-04-07 CN CN201480026375.3A patent/CN105210169B/zh active Active
- 2014-04-07 SG SG11201508324VA patent/SG11201508324VA/en unknown
- 2014-04-07 WO PCT/EP2014/000927 patent/WO2014166620A1/de active Application Filing
- 2014-04-07 ES ES14718509.4T patent/ES2675332T3/es active Active
- 2014-04-07 JP JP2016506806A patent/JP6655531B2/ja active Active
- 2014-04-07 WO PCT/EP2014/000928 patent/WO2014166621A1/de active Application Filing
- 2014-04-07 MY MYPI2015703578A patent/MY178843A/en unknown
- 2014-04-07 JP JP2016506805A patent/JP6360884B2/ja active Active
- 2014-04-07 BR BR112015025749A patent/BR112015025749A2/pt not_active IP Right Cessation
- 2014-04-07 EP EP14717412.2A patent/EP2984673B1/de active Active
- 2014-04-07 AR ARP140101499A patent/AR099253A1/es unknown
- 2014-04-07 US US14/783,168 patent/US9536714B2/en active Active - Reinstated
- 2014-04-07 RU RU2015147496A patent/RU2665059C2/ru not_active IP Right Cessation
- 2014-04-07 SG SG11201508311VA patent/SG11201508311VA/en unknown
- 2014-04-07 US US14/783,383 patent/US9564300B2/en active Active
- 2014-04-07 CA CA2908897A patent/CA2908897C/en active Active
- 2014-04-08 TW TW103112844A patent/TW201443258A/zh unknown
- 2014-04-08 TW TW103112846A patent/TW201443263A/zh unknown
-
2015
- 2015-10-07 PH PH12015502328A patent/PH12015502328A1/en unknown
- 2015-10-08 IL IL241980A patent/IL241980B/en active IP Right Grant
- 2015-10-08 IL IL241979A patent/IL241979B/en active IP Right Grant
- 2015-10-08 PH PH12015502338A patent/PH12015502338A1/en unknown
-
2016
- 2016-03-02 HK HK16102413.7A patent/HK1214403A1/zh unknown
- 2016-06-29 HK HK16107567.0A patent/HK1219562A1/zh not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20230406 |