MX350172B - Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas. - Google Patents

Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas.

Info

Publication number
MX350172B
MX350172B MX2015014209A MX2015014209A MX350172B MX 350172 B MX350172 B MX 350172B MX 2015014209 A MX2015014209 A MX 2015014209A MX 2015014209 A MX2015014209 A MX 2015014209A MX 350172 B MX350172 B MX 350172B
Authority
MX
Mexico
Prior art keywords
holder
plate
temperatures
centering
higher temperatures
Prior art date
Application number
MX2015014209A
Other languages
English (en)
Other versions
MX2015014209A (es
Inventor
Kerschbaumer Joerg
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of MX2015014209A publication Critical patent/MX2015014209A/es
Publication of MX350172B publication Critical patent/MX350172B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Packaging For Recording Disks (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Nozzles (AREA)

Abstract

La presente invención se refiere a un sistema que comprende una placa que tiene un soporte, en donde la placa se centra en el soporte tanto a la temperatura ambiente como también a temperaturas más elevadas independientemente de la expansión térmica de la placa y del soporte, y en donde la placa se puede dilatar libremente en el soporte a temperaturas más altas.
MX2015014209A 2013-04-08 2014-04-07 Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas. MX350172B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
PCT/EP2014/000928 WO2014166621A1 (de) 2013-04-08 2014-04-07 Zentrierung einer platte in einer halterung sowohl bei raum- als auch bei höheren temperaturen

Publications (2)

Publication Number Publication Date
MX2015014209A MX2015014209A (es) 2016-05-10
MX350172B true MX350172B (es) 2017-08-28

Family

ID=50486885

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2015014210A MX350171B (es) 2013-04-08 2014-04-07 Blanco de pulverizacion catodica que resiste mejor la potencia.
MX2015014209A MX350172B (es) 2013-04-08 2014-04-07 Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MX2015014210A MX350171B (es) 2013-04-08 2014-04-07 Blanco de pulverizacion catodica que resiste mejor la potencia.

Country Status (21)

Country Link
US (2) US9536714B2 (es)
EP (2) EP2984674B1 (es)
JP (2) JP6655531B2 (es)
KR (2) KR102234454B1 (es)
CN (2) CN105324830B (es)
AR (2) AR096021A1 (es)
BR (2) BR112015025747A2 (es)
CA (2) CA2908892C (es)
ES (1) ES2675332T3 (es)
HK (2) HK1214403A1 (es)
HU (1) HUE038784T2 (es)
IL (2) IL241980B (es)
MX (2) MX350171B (es)
MY (2) MY185549A (es)
PH (2) PH12015502328A1 (es)
PL (1) PL2984674T3 (es)
RU (2) RU2665058C2 (es)
SG (3) SG10201708186QA (es)
TR (1) TR201809526T4 (es)
TW (2) TW201443258A (es)
WO (2) WO2014166620A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
CN110892502B (zh) 2017-06-01 2022-10-04 欧瑞康表面处理解决方案股份公司普费菲孔 用于脆性材料的安全经济蒸发的靶组件
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
BR112021012176A2 (pt) * 2018-12-20 2021-08-31 Oerlikon Surface Solutions Ag, Pfäffikon Dispositivo de ignição de arco para deposição de arco catódico de material alvo sobre um substrato, conjuntos de deposição de arco catódico de um material sobre um substrato, método de ignição de arco para deposição de arco catódico de materiais, uso de dispositivo de ignição de arco e uso de conjunto
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
KR20220116492A (ko) * 2019-12-13 2022-08-23 에바텍 아크티엔게젤샤프트 Pvd-소스용 가스 링

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (es) * 1979-10-31 1982-05-29
EP0393344A1 (de) 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
AU1151592A (en) * 1991-01-28 1992-08-27 Materials Research Corporation Target for cathode sputtering
DE9102052U1 (de) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo Indirekt gekühlter Verdampfer mit Schnellwechselsystem
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
EP0512456B1 (de) * 1991-05-08 1997-06-18 Balzers Aktiengesellschaft Verfahren zur Montage bzw. Demontage einer Targetplatte in einem Vakuumprozessraum, Montageanordnung hierfür sowie Targetplatte bzw. Vakuumkammer
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
DE19535894A1 (de) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4101524B2 (ja) * 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 成膜装置
JP2010116605A (ja) * 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Also Published As

Publication number Publication date
RU2015147496A (ru) 2017-05-16
PH12015502328B1 (en) 2016-02-22
KR20150139555A (ko) 2015-12-11
EP2984674A1 (de) 2016-02-17
CN105324830A (zh) 2016-02-10
JP2016519719A (ja) 2016-07-07
JP2016514771A (ja) 2016-05-23
WO2014166621A1 (de) 2014-10-16
US20160071706A1 (en) 2016-03-10
US9536714B2 (en) 2017-01-03
PL2984674T3 (pl) 2018-10-31
EP2984673A1 (de) 2016-02-17
CN105210169A (zh) 2015-12-30
SG10201708186QA (en) 2017-11-29
KR102190319B1 (ko) 2020-12-14
TW201443263A (zh) 2014-11-16
US9564300B2 (en) 2017-02-07
ES2675332T3 (es) 2018-07-10
EP2984674B1 (de) 2018-06-06
BR112015025747A2 (pt) 2017-07-18
BR112015025749A2 (pt) 2017-07-18
MX2015014209A (es) 2016-05-10
AR099253A1 (es) 2016-07-13
SG11201508324VA (en) 2015-11-27
MY185549A (en) 2021-05-19
RU2015147497A (ru) 2017-05-16
HK1219562A1 (zh) 2017-04-07
KR20150139556A (ko) 2015-12-11
IL241980B (en) 2020-08-31
JP6360884B2 (ja) 2018-07-18
HK1214403A1 (zh) 2016-07-22
HUE038784T2 (hu) 2018-11-28
JP6655531B2 (ja) 2020-02-26
RU2665058C2 (ru) 2018-08-28
CA2908892A1 (en) 2014-10-16
AR096021A1 (es) 2015-12-02
MX350171B (es) 2017-08-28
MY178843A (en) 2020-10-20
IL241979B (en) 2020-07-30
TR201809526T4 (tr) 2018-07-23
MX2015014210A (es) 2016-05-05
PH12015502338B1 (en) 2016-02-22
CA2908897C (en) 2023-03-14
SG11201508311VA (en) 2015-11-27
CA2908892C (en) 2021-08-24
CN105210169B (zh) 2017-04-19
US20160064201A1 (en) 2016-03-03
TW201443258A (zh) 2014-11-16
RU2665059C2 (ru) 2018-08-28
EP2984673B1 (de) 2020-03-11
CA2908897A1 (en) 2014-10-16
CN105324830B (zh) 2017-08-01
PH12015502328A1 (en) 2016-02-22
WO2014166620A1 (de) 2014-10-16
KR102234454B1 (ko) 2021-04-01
PH12015502338A1 (en) 2016-02-22

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Legal Events

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HC Change of company name or juridical status

Owner name: GENENTECH, INC.

FG Grant or registration