BR112015025749A2 - fonte de revestimento como fornecedora de material para revestimento pvd e sistema pvd - Google Patents

fonte de revestimento como fornecedora de material para revestimento pvd e sistema pvd

Info

Publication number
BR112015025749A2
BR112015025749A2 BR112015025749A BR112015025749A BR112015025749A2 BR 112015025749 A2 BR112015025749 A2 BR 112015025749A2 BR 112015025749 A BR112015025749 A BR 112015025749A BR 112015025749 A BR112015025749 A BR 112015025749A BR 112015025749 A2 BR112015025749 A2 BR 112015025749A2
Authority
BR
Brazil
Prior art keywords
pvd
coating
support
supplier
slab
Prior art date
Application number
BR112015025749A
Other languages
English (en)
Inventor
Kerschbaumer Joerg
Hagmann Juerg
Krassnitzer Siegfried
Original Assignee
Oerlikon Surface Solutions Ag Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Truebbach filed Critical Oerlikon Surface Solutions Ag Truebbach
Publication of BR112015025749A2 publication Critical patent/BR112015025749A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Nozzles (AREA)
  • Packaging For Recording Disks (AREA)

Abstract

resumo “fonte de revestimento como fornecedora de material para revestimento pvd e sistema pvd”, por tratar a presente invenção de um sistema de centragem de uma placa compreendendo uma placa tendo um suporte, no qual a placa é centrada no suporte tanto em temperaturas ambientes como também em temperaturas mais elevadas independentemente da expansão térmica da placa e do suporte, e no qual a placa pode se expandir livremente no suporte em temperaturas mais elevadas. a invenção se refere particularmente a um alvo compreendendo um montante de alvo com formato de quadro, que é muito bem adequado para ser utilizado em uma fonte de revestimento para a pulverização de um alvo com impulsos de alta energia de magnetrons. 1/1
BR112015025749A 2013-04-08 2014-04-07 fonte de revestimento como fornecedora de material para revestimento pvd e sistema pvd BR112015025749A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
PCT/EP2014/000927 WO2014166620A1 (de) 2013-04-08 2014-04-07 Sputtertarget mit erhöhter leistungsverträglichkeit

Publications (1)

Publication Number Publication Date
BR112015025749A2 true BR112015025749A2 (pt) 2017-07-18

Family

ID=50486885

Family Applications (2)

Application Number Title Priority Date Filing Date
BR112015025747A BR112015025747A2 (pt) 2013-04-08 2014-04-07 placa com formato de disco com suporte e sistema pvd
BR112015025749A BR112015025749A2 (pt) 2013-04-08 2014-04-07 fonte de revestimento como fornecedora de material para revestimento pvd e sistema pvd

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BR112015025747A BR112015025747A2 (pt) 2013-04-08 2014-04-07 placa com formato de disco com suporte e sistema pvd

Country Status (21)

Country Link
US (2) US9536714B2 (pt)
EP (2) EP2984673B1 (pt)
JP (2) JP6655531B2 (pt)
KR (2) KR102190319B1 (pt)
CN (2) CN105324830B (pt)
AR (2) AR099253A1 (pt)
BR (2) BR112015025747A2 (pt)
CA (2) CA2908897C (pt)
ES (1) ES2675332T3 (pt)
HK (2) HK1214403A1 (pt)
HU (1) HUE038784T2 (pt)
IL (2) IL241979B (pt)
MX (2) MX350172B (pt)
MY (2) MY185549A (pt)
PH (2) PH12015502328B1 (pt)
PL (1) PL2984674T3 (pt)
RU (2) RU2665058C2 (pt)
SG (3) SG10201708186QA (pt)
TR (1) TR201809526T4 (pt)
TW (2) TW201443263A (pt)
WO (2) WO2014166621A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
EP3631837B1 (en) 2017-06-01 2021-01-27 Oerlikon Surface Solutions AG, Pfäffikon Target assembly for safe and economic evaporation of brittle materials
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
CN115088053A (zh) * 2019-12-13 2022-09-20 瑞士艾发科技 用于pvd源的气环

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (pt) * 1979-10-31 1982-05-29
EP0393344A1 (de) * 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
AU1151592A (en) * 1991-01-28 1992-08-27 Materials Research Corporation Target for cathode sputtering
DE9102052U1 (pt) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo, Nl
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
DE59208623D1 (de) 1991-05-08 1997-07-24 Balzers Hochvakuum Verfahren zur Montage bzw. Demontage einer Targetplatte in einem Vakuumprozessraum, Montageanordnung hierfür sowie Targetplatte bzw. Vakuumkammer
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
WO1997003221A1 (en) * 1995-07-10 1997-01-30 Cvc Products, Inc. Magnetron cathode apparatus and method for sputtering
DE19535894A1 (de) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4101524B2 (ja) * 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 成膜装置
JP2010116605A (ja) * 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Also Published As

Publication number Publication date
KR20150139556A (ko) 2015-12-11
TR201809526T4 (tr) 2018-07-23
HK1219562A1 (zh) 2017-04-07
JP2016514771A (ja) 2016-05-23
EP2984673A1 (de) 2016-02-17
RU2015147497A (ru) 2017-05-16
AR096021A1 (es) 2015-12-02
IL241980B (en) 2020-08-31
MX2015014209A (es) 2016-05-10
KR20150139555A (ko) 2015-12-11
EP2984674B1 (de) 2018-06-06
KR102234454B1 (ko) 2021-04-01
JP6655531B2 (ja) 2020-02-26
CN105324830A (zh) 2016-02-10
US9536714B2 (en) 2017-01-03
CN105210169A (zh) 2015-12-30
CA2908897A1 (en) 2014-10-16
RU2015147496A (ru) 2017-05-16
RU2665058C2 (ru) 2018-08-28
PH12015502328A1 (en) 2016-02-22
PH12015502338B1 (en) 2016-02-22
MX350171B (es) 2017-08-28
US9564300B2 (en) 2017-02-07
EP2984673B1 (de) 2020-03-11
ES2675332T3 (es) 2018-07-10
JP2016519719A (ja) 2016-07-07
SG11201508311VA (en) 2015-11-27
BR112015025747A2 (pt) 2017-07-18
CA2908892A1 (en) 2014-10-16
MY185549A (en) 2021-05-19
MX2015014210A (es) 2016-05-05
CN105324830B (zh) 2017-08-01
JP6360884B2 (ja) 2018-07-18
RU2665059C2 (ru) 2018-08-28
AR099253A1 (es) 2016-07-13
PH12015502338A1 (en) 2016-02-22
WO2014166621A1 (de) 2014-10-16
IL241979B (en) 2020-07-30
SG10201708186QA (en) 2017-11-29
US20160071706A1 (en) 2016-03-10
CA2908897C (en) 2023-03-14
TW201443258A (zh) 2014-11-16
EP2984674A1 (de) 2016-02-17
HUE038784T2 (hu) 2018-11-28
SG11201508324VA (en) 2015-11-27
KR102190319B1 (ko) 2020-12-14
HK1214403A1 (zh) 2016-07-22
CN105210169B (zh) 2017-04-19
CA2908892C (en) 2021-08-24
PL2984674T3 (pl) 2018-10-31
US20160064201A1 (en) 2016-03-03
MX350172B (es) 2017-08-28
TW201443263A (zh) 2014-11-16
WO2014166620A1 (de) 2014-10-16
MY178843A (en) 2020-10-20
PH12015502328B1 (en) 2016-02-22

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]