MX350171B - Blanco de pulverizacion catodica que resiste mejor la potencia. - Google Patents

Blanco de pulverizacion catodica que resiste mejor la potencia.

Info

Publication number
MX350171B
MX350171B MX2015014210A MX2015014210A MX350171B MX 350171 B MX350171 B MX 350171B MX 2015014210 A MX2015014210 A MX 2015014210A MX 2015014210 A MX2015014210 A MX 2015014210A MX 350171 B MX350171 B MX 350171B
Authority
MX
Mexico
Prior art keywords
plate
holder
target
sputtering target
increased power
Prior art date
Application number
MX2015014210A
Other languages
English (en)
Other versions
MX2015014210A (es
Inventor
Krassnitzer Siegfried
Hagmann Juerg
Kerschbaumer Joerg
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of MX2015014210A publication Critical patent/MX2015014210A/es
Publication of MX350171B publication Critical patent/MX350171B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Packaging For Recording Disks (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Nozzles (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

La presente invención se refiere a un sistema de centrado de placa que comprende una placa con soporte, en el cual la placa se encuentra centrada en el soporte tanto a la temperatura ambiente como también a temperaturas más altas, independientemente de la expansión térmica de la placa y del soporte, y la placa se puede dilatar libremente en el soporte a temperaturas más altas. En particular la presente invención se refiere a un blanco con montura de blanco que tiene forma de marco, la cual es muy bien adecuada en una fuente de recubrimiento por pulverización catódica del blanco mediante magnetrón de impulsos de alta potencia.
MX2015014210A 2013-04-08 2014-04-07 Blanco de pulverizacion catodica que resiste mejor la potencia. MX350171B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
PCT/EP2014/000927 WO2014166620A1 (de) 2013-04-08 2014-04-07 Sputtertarget mit erhöhter leistungsverträglichkeit

Publications (2)

Publication Number Publication Date
MX2015014210A MX2015014210A (es) 2016-05-05
MX350171B true MX350171B (es) 2017-08-28

Family

ID=50486885

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2015014209A MX350172B (es) 2013-04-08 2014-04-07 Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas.
MX2015014210A MX350171B (es) 2013-04-08 2014-04-07 Blanco de pulverizacion catodica que resiste mejor la potencia.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MX2015014209A MX350172B (es) 2013-04-08 2014-04-07 Centrado de una placa en un soporte tanto a temperatura como tambien a temperaturas mas elevadas.

Country Status (21)

Country Link
US (2) US9536714B2 (es)
EP (2) EP2984674B1 (es)
JP (2) JP6655531B2 (es)
KR (2) KR102234454B1 (es)
CN (2) CN105324830B (es)
AR (2) AR099253A1 (es)
BR (2) BR112015025749A2 (es)
CA (2) CA2908897C (es)
ES (1) ES2675332T3 (es)
HK (2) HK1214403A1 (es)
HU (1) HUE038784T2 (es)
IL (2) IL241979B (es)
MX (2) MX350172B (es)
MY (2) MY185549A (es)
PH (2) PH12015502328A1 (es)
PL (1) PL2984674T3 (es)
RU (2) RU2665059C2 (es)
SG (3) SG11201508324VA (es)
TR (1) TR201809526T4 (es)
TW (2) TW201443263A (es)
WO (2) WO2014166621A1 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) * 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
JP7153290B2 (ja) 2017-06-01 2022-10-14 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン 脆性材料の安全で経済的な蒸発のためのターゲットアセンブリ
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
CN115088053A (zh) * 2019-12-13 2022-09-20 瑞士艾发科技 用于pvd源的气环

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (es) * 1979-10-31 1982-05-29
EP0393344A1 (de) 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
KR100231397B1 (ko) * 1991-01-28 1999-11-15 튜그룰 야사르 음극 스퍼터링용 타겟
DE9102052U1 (es) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo, Nl
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
DE19535894A1 (de) 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4101524B2 (ja) * 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 成膜装置
JP2010116605A (ja) * 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Also Published As

Publication number Publication date
EP2984674B1 (de) 2018-06-06
CA2908897A1 (en) 2014-10-16
BR112015025749A2 (pt) 2017-07-18
JP2016519719A (ja) 2016-07-07
US9564300B2 (en) 2017-02-07
EP2984673B1 (de) 2020-03-11
CN105210169A (zh) 2015-12-30
EP2984674A1 (de) 2016-02-17
JP6360884B2 (ja) 2018-07-18
TR201809526T4 (tr) 2018-07-23
CA2908897C (en) 2023-03-14
RU2015147496A (ru) 2017-05-16
SG11201508324VA (en) 2015-11-27
MX2015014210A (es) 2016-05-05
BR112015025747A2 (pt) 2017-07-18
US20160071706A1 (en) 2016-03-10
RU2665058C2 (ru) 2018-08-28
SG10201708186QA (en) 2017-11-29
CN105210169B (zh) 2017-04-19
KR20150139555A (ko) 2015-12-11
IL241979B (en) 2020-07-30
US20160064201A1 (en) 2016-03-03
MX350172B (es) 2017-08-28
TW201443258A (zh) 2014-11-16
PH12015502328B1 (en) 2016-02-22
PH12015502338A1 (en) 2016-02-22
TW201443263A (zh) 2014-11-16
CA2908892A1 (en) 2014-10-16
HUE038784T2 (hu) 2018-11-28
KR102190319B1 (ko) 2020-12-14
CN105324830A (zh) 2016-02-10
AR096021A1 (es) 2015-12-02
MY185549A (en) 2021-05-19
HK1214403A1 (zh) 2016-07-22
CA2908892C (en) 2021-08-24
EP2984673A1 (de) 2016-02-17
RU2665059C2 (ru) 2018-08-28
RU2015147497A (ru) 2017-05-16
PL2984674T3 (pl) 2018-10-31
MY178843A (en) 2020-10-20
PH12015502338B1 (en) 2016-02-22
IL241980B (en) 2020-08-31
US9536714B2 (en) 2017-01-03
WO2014166620A1 (de) 2014-10-16
KR20150139556A (ko) 2015-12-11
AR099253A1 (es) 2016-07-13
JP6655531B2 (ja) 2020-02-26
MX2015014209A (es) 2016-05-10
PH12015502328A1 (en) 2016-02-22
ES2675332T3 (es) 2018-07-10
JP2016514771A (ja) 2016-05-23
SG11201508311VA (en) 2015-11-27
KR102234454B1 (ko) 2021-04-01
WO2014166621A1 (de) 2014-10-16
CN105324830B (zh) 2017-08-01
HK1219562A1 (zh) 2017-04-07

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Legal Events

Date Code Title Description
HC Change of company name or juridical status

Owner name: GENENTECH, INC.

FG Grant or registration