HK1214403A1 - 功率相容性更高的溅射靶 - Google Patents

功率相容性更高的溅射靶 Download PDF

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Publication number
HK1214403A1
HK1214403A1 HK16102413.7A HK16102413A HK1214403A1 HK 1214403 A1 HK1214403 A1 HK 1214403A1 HK 16102413 A HK16102413 A HK 16102413A HK 1214403 A1 HK1214403 A1 HK 1214403A1
Authority
HK
Hong Kong
Prior art keywords
plate
target
coating source
source according
cooling
Prior art date
Application number
HK16102413.7A
Other languages
English (en)
Chinese (zh)
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Joerg Kerschbaumer
Original Assignee
欧瑞康表面处理解决方案股份公司特鲁巴赫
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 欧瑞康表面处理解决方案股份公司特鲁巴赫 filed Critical 欧瑞康表面处理解决方案股份公司特鲁巴赫
Publication of HK1214403A1 publication Critical patent/HK1214403A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/3467Pulsed operation, e.g. HIPIMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Telescopes (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Packaging For Recording Disks (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Nozzles (AREA)
HK16102413.7A 2013-04-08 2014-04-07 功率相容性更高的溅射靶 HK1214403A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361809524P 2013-04-08 2013-04-08
US61/809,524 2013-04-08
PCT/EP2014/000927 WO2014166620A1 (de) 2013-04-08 2014-04-07 Sputtertarget mit erhöhter leistungsverträglichkeit

Publications (1)

Publication Number Publication Date
HK1214403A1 true HK1214403A1 (zh) 2016-07-22

Family

ID=50486885

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16102413.7A HK1214403A1 (zh) 2013-04-08 2014-04-07 功率相容性更高的溅射靶

Country Status (21)

Country Link
US (2) US9564300B2 (enExample)
EP (2) EP2984673B1 (enExample)
JP (2) JP6655531B2 (enExample)
KR (2) KR102234454B1 (enExample)
CN (2) CN105210169B (enExample)
AR (2) AR096021A1 (enExample)
BR (2) BR112015025747A2 (enExample)
CA (2) CA2908892C (enExample)
ES (1) ES2675332T3 (enExample)
HK (1) HK1214403A1 (enExample)
HU (1) HUE038784T2 (enExample)
IL (2) IL241979B (enExample)
MX (2) MX350171B (enExample)
MY (2) MY178843A (enExample)
PH (2) PH12015502328B1 (enExample)
PL (1) PL2984674T3 (enExample)
RU (2) RU2665058C2 (enExample)
SG (3) SG11201508324VA (enExample)
TR (1) TR201809526T4 (enExample)
TW (2) TW201443258A (enExample)
WO (2) WO2014166621A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435784B2 (en) 2016-08-10 2019-10-08 Applied Materials, Inc. Thermally optimized rings
US11158491B2 (en) 2017-06-01 2021-10-26 Oerlikon Surface Solutions Ag, Pfäffikon Target assembly for safe and economic evaporation of brittle materials
CN108130516A (zh) * 2018-01-03 2018-06-08 梧州三和新材料科技有限公司 一种使用泡沫金属增强冷却的真空镀阴极靶
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
CN110838458B (zh) 2018-08-17 2022-08-09 台湾积体电路制造股份有限公司 半导体制程系统以及方法
MX2021007531A (es) * 2018-12-20 2021-08-05 Oerlikon Surface Solutions Ag Pfaeffikon Dispositivo de ignicion de arco catodico.
CN110066980A (zh) * 2019-05-31 2019-07-30 德淮半导体有限公司 环状靶材部件、半导体工艺设备及其工作方法
KR20220116492A (ko) * 2019-12-13 2022-08-23 에바텍 아크티엔게젤샤프트 Pvd-소스용 가스 링

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724890Y2 (enExample) * 1979-10-31 1982-05-29
EP0393344A1 (de) * 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Haltevorrichtung für Targets von Zerstäubungsquellen und Verfahren zum Festhalten eines Targets in einer Halterung
DE4015388C2 (de) * 1990-05-14 1997-07-17 Leybold Ag Kathodenzerstäubungsvorrichtung
CA2098725A1 (en) * 1991-01-28 1992-07-29 Daniel R. Marx Target for cathode sputtering
DE9102052U1 (de) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo Indirekt gekühlter Verdampfer mit Schnellwechselsystem
JP3030921B2 (ja) * 1991-05-01 2000-04-10 日新電機株式会社 イオン源の引出し電極装置
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
DE4133564C2 (de) * 1991-10-10 1999-11-18 Leybold Ag Vorrichtung zur lösbaren Befestigung eines Targets oder Targetgrundkörpers auf der Kathodenhalterung
RU2037559C1 (ru) * 1992-08-10 1995-06-19 Волин Эрнст Михайлович Способ нанесения покрытий на изделия методом ионного распыления и устройство для его осуществления
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
DE19535894A1 (de) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6217832B1 (en) * 1998-04-30 2001-04-17 Catalytica, Inc. Support structures for a catalyst
JP4251713B2 (ja) * 1999-05-21 2009-04-08 株式会社アルバック スパッタ装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4101524B2 (ja) * 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 成膜装置
JP2010116605A (ja) 2008-11-13 2010-05-27 Fujikura Ltd ターゲット保持装置、ならびにこれを用いた成膜装置および成膜方法
JP2011165964A (ja) * 2010-02-10 2011-08-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102012006717A1 (de) 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target

Also Published As

Publication number Publication date
RU2665058C2 (ru) 2018-08-28
MY178843A (en) 2020-10-20
AR096021A1 (es) 2015-12-02
CN105210169B (zh) 2017-04-19
US9536714B2 (en) 2017-01-03
KR20150139556A (ko) 2015-12-11
MX350172B (es) 2017-08-28
SG10201708186QA (en) 2017-11-29
MX350171B (es) 2017-08-28
CN105324830B (zh) 2017-08-01
PL2984674T3 (pl) 2018-10-31
TR201809526T4 (tr) 2018-07-23
BR112015025749A2 (pt) 2017-07-18
EP2984674A1 (de) 2016-02-17
RU2015147497A (ru) 2017-05-16
CA2908897A1 (en) 2014-10-16
CA2908897C (en) 2023-03-14
JP2016514771A (ja) 2016-05-23
JP2016519719A (ja) 2016-07-07
KR102190319B1 (ko) 2020-12-14
CA2908892C (en) 2021-08-24
US20160071706A1 (en) 2016-03-10
HUE038784T2 (hu) 2018-11-28
WO2014166621A1 (de) 2014-10-16
CN105210169A (zh) 2015-12-30
PH12015502338B1 (en) 2016-02-22
TW201443263A (zh) 2014-11-16
CA2908892A1 (en) 2014-10-16
IL241979B (en) 2020-07-30
ES2675332T3 (es) 2018-07-10
SG11201508311VA (en) 2015-11-27
EP2984673B1 (de) 2020-03-11
AR099253A1 (es) 2016-07-13
KR20150139555A (ko) 2015-12-11
MX2015014210A (es) 2016-05-05
SG11201508324VA (en) 2015-11-27
EP2984673A1 (de) 2016-02-17
WO2014166620A1 (de) 2014-10-16
MY185549A (en) 2021-05-19
KR102234454B1 (ko) 2021-04-01
RU2015147496A (ru) 2017-05-16
PH12015502338A1 (en) 2016-02-22
MX2015014209A (es) 2016-05-10
JP6655531B2 (ja) 2020-02-26
US9564300B2 (en) 2017-02-07
TW201443258A (zh) 2014-11-16
CN105324830A (zh) 2016-02-10
BR112015025747A2 (pt) 2017-07-18
HK1219562A1 (zh) 2017-04-07
EP2984674B1 (de) 2018-06-06
PH12015502328A1 (en) 2016-02-22
RU2665059C2 (ru) 2018-08-28
US20160064201A1 (en) 2016-03-03
JP6360884B2 (ja) 2018-07-18
IL241980B (en) 2020-08-31
PH12015502328B1 (en) 2018-09-26

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