MY144163A - Polishing composition - Google Patents

Polishing composition

Info

Publication number
MY144163A
MY144163A MYPI20055484A MYPI20055484A MY144163A MY 144163 A MY144163 A MY 144163A MY PI20055484 A MYPI20055484 A MY PI20055484A MY PI20055484 A MYPI20055484 A MY PI20055484A MY 144163 A MY144163 A MY 144163A
Authority
MY
Malaysia
Prior art keywords
polishing composition
substrate
compound
hard disk
amino groups
Prior art date
Application number
MYPI20055484A
Other languages
English (en)
Inventor
Shigeo Fujii
Kenichi Suenaga
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of MY144163A publication Critical patent/MY144163A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
MYPI20055484A 2004-11-30 2005-11-24 Polishing composition MY144163A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347212A JP4836441B2 (ja) 2004-11-30 2004-11-30 研磨液組成物

Publications (1)

Publication Number Publication Date
MY144163A true MY144163A (en) 2011-08-15

Family

ID=35580228

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20055484A MY144163A (en) 2004-11-30 2005-11-24 Polishing composition

Country Status (6)

Country Link
US (2) US20060112647A1 (zh)
JP (1) JP4836441B2 (zh)
CN (1) CN1781971B (zh)
GB (1) GB2421244B (zh)
MY (1) MY144163A (zh)
TW (1) TWI370844B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4577296B2 (ja) * 2006-10-27 2010-11-10 富士電機デバイステクノロジー株式会社 磁気記録媒体用非金属基板の再生方法
JP2009013046A (ja) * 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
JP2008307676A (ja) * 2007-06-18 2008-12-25 Kao Corp ハードディスク基板用研磨液組成物
JP5063339B2 (ja) * 2007-12-28 2012-10-31 花王株式会社 ハードディスク基板用研磨液組成物、並びにこれを用いた研磨方法及びハードディスク基板の製造方法
JP5576634B2 (ja) * 2008-11-05 2014-08-20 山口精研工業株式会社 研磨剤組成物及び磁気ディスク基板の研磨方法
JP5657247B2 (ja) * 2009-12-25 2015-01-21 花王株式会社 研磨液組成物
JP5940278B2 (ja) * 2010-10-27 2016-06-29 花王株式会社 ガラスハードディスク基板の製造方法
JP5925454B2 (ja) 2010-12-16 2016-05-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
KR101521036B1 (ko) 2011-02-23 2015-05-15 다이니치 세이카 고교 가부시키가이샤 수성 액상 조성물, 수성 도공액, 기능성 도공막 및 복합재료
JP5933950B2 (ja) * 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
JP5870195B2 (ja) 2012-08-21 2016-02-24 大日精化工業株式会社 水性液状組成物、水性塗工液、機能性塗工膜、及び複合材料
EP2910334A4 (en) * 2012-10-03 2016-08-03 Fujimi Inc POLISHING METHOD AND METHOD FOR PRODUCING AN ALLOYING MATERIAL
CN106716530B (zh) * 2014-09-17 2019-06-21 Hoya株式会社 磁盘用基板的制造方法
JP6659449B2 (ja) * 2016-05-09 2020-03-04 山口精研工業株式会社 無電解ニッケル−リンめっきされたアルミニウム磁気ディスク基板用研磨剤組成物
JP6734146B2 (ja) * 2016-08-23 2020-08-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
CN108148507B (zh) * 2017-12-18 2020-12-04 清华大学 一种用于熔石英的抛光组合物
JP2021137931A (ja) * 2020-03-06 2021-09-16 株式会社フジミインコーポレーテッド アルミナスラリー、これを用いたウェットブラスト加工用スラリー及び加工方法

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Publication number Priority date Publication date Assignee Title
US4639394A (en) * 1985-04-01 1987-01-27 Ppg Industries, Inc. Non-aqueous dispersions prepared with styrene polymer dispersion stabilizers
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5350788A (en) * 1993-03-11 1994-09-27 E. I. Du Pont De Nemours And Company Method for reducing odors in recycled plastics and compositions relating thereto
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5362784A (en) * 1993-05-28 1994-11-08 E. I. Du Pont De Nemours And Company Aldehyde scavenging compositions and methods relating thereto
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
ATE292167T1 (de) * 1999-08-13 2005-04-15 Cabot Microelectronics Corp Poliersystem mit stopmittel und verfahren zu seiner verwendung
JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP3575750B2 (ja) * 2000-05-12 2004-10-13 花王株式会社 研磨液組成物
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6755721B2 (en) * 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP3875155B2 (ja) * 2002-07-31 2007-01-31 花王株式会社 ロールオフ低減剤
GB2393186B (en) * 2002-07-31 2006-02-22 Kao Corp Polishing composition
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
JP4446371B2 (ja) * 2002-08-30 2010-04-07 花王株式会社 研磨液組成物
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
JP2004311484A (ja) * 2003-04-02 2004-11-04 Sumitomo Bakelite Co Ltd 研磨用組成物
WO2004100242A1 (ja) * 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Cmpプロセス用研磨液及び研磨方法
JP2004335978A (ja) * 2003-05-12 2004-11-25 Jsr Corp 化学機械研磨方法
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers

Also Published As

Publication number Publication date
GB0523438D0 (en) 2005-12-28
JP4836441B2 (ja) 2011-12-14
CN1781971B (zh) 2010-05-05
GB2421244A (en) 2006-06-21
GB2421244B (en) 2009-03-18
TW200621967A (en) 2006-07-01
US20060112647A1 (en) 2006-06-01
JP2006150534A (ja) 2006-06-15
TWI370844B (en) 2012-08-21
CN1781971A (zh) 2006-06-07
US20080280538A1 (en) 2008-11-13

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