US20080280538A1 - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- US20080280538A1 US20080280538A1 US12/216,762 US21676208A US2008280538A1 US 20080280538 A1 US20080280538 A1 US 20080280538A1 US 21676208 A US21676208 A US 21676208A US 2008280538 A1 US2008280538 A1 US 2008280538A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- polishing
- containing compound
- polishing composition
- organic nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 182
- 239000000203 mixture Substances 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 44
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 125000001477 organic nitrogen group Chemical group 0.000 claims abstract description 30
- 150000007519 polyprotic acids Polymers 0.000 claims abstract description 23
- 125000003277 amino group Chemical group 0.000 claims abstract description 15
- 125000001841 imino group Chemical group [H]N=* 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 47
- 239000007800 oxidant agent Substances 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 8
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 4
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 claims description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 3
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 57
- 239000002245 particle Substances 0.000 description 37
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 28
- 235000015165 citric acid Nutrition 0.000 description 19
- 239000006061 abrasive grain Substances 0.000 description 14
- 229920002873 Polyethylenimine Polymers 0.000 description 13
- 150000002978 peroxides Chemical class 0.000 description 12
- 229910018104 Ni-P Inorganic materials 0.000 description 10
- 229910018536 Ni—P Inorganic materials 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052752 metalloid Inorganic materials 0.000 description 5
- 150000002738 metalloids Chemical class 0.000 description 5
- 150000007522 mineralic acids Chemical class 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000011163 secondary particle Substances 0.000 description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 229910021485 fumed silica Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001630 malic acid Substances 0.000 description 4
- 235000011090 malic acid Nutrition 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229940120146 EDTMP Drugs 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 2
- 238000001336 glow discharge atomic emission spectroscopy Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 1
- JXBUOZMYKQDZFY-UHFFFAOYSA-N 4-hydroxybenzene-1,3-disulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C=C1S(O)(=O)=O JXBUOZMYKQDZFY-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 description 1
- 229920001732 Lignosulfonate Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- SCKXCAADGDQQCS-UHFFFAOYSA-N Performic acid Chemical compound OOC=O SCKXCAADGDQQCS-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HBRNMIYLJIXXEE-UHFFFAOYSA-N dodecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCN HBRNMIYLJIXXEE-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AFAXGSQYZLGZPG-UHFFFAOYSA-N ethanedisulfonic acid Chemical compound OS(=O)(=O)CCS(O)(=O)=O AFAXGSQYZLGZPG-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- OPUAWDUYWRUIIL-UHFFFAOYSA-N methanedisulfonic acid Chemical compound OS(=O)(=O)CS(O)(=O)=O OPUAWDUYWRUIIL-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- UUZZMWZGAZGXSF-UHFFFAOYSA-N peroxynitric acid Chemical compound OON(=O)=O UUZZMWZGAZGXSF-UHFFFAOYSA-N 0.000 description 1
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000333 poly(propyleneimine) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a polishing composition, a method for manufacturing a substrate with the polishing composition, and a method for reducing surface stains on a substrate with the polishing composition.
- the present invention relates to:
- a polishing composition containing an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups;
- a method for manufacturing a substrate including the step of feeding the polishing composition as defined in the above [ ⁇ ] to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm 2 of the substrate, and polishing the substrate with a polishing pad; and [3] a method for reducing surface stains on a substrate, including the step of feeding the polishing composition as defined in the above [1] to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm 2 of the substrate, and polishing the substrate with a polishing pad.
- the present invention relates to a polishing composition giving fewer residual abrasive grains and polishing debris generated by polishing on a polished substrate after polishing, higher polishing rates, and being capable of maintaining smoothness of the substrate; a method for manufacturing a substrate with the polishing composition; and a method for reducing surface stains on a substrate with the polishing composition.
- the polishing composition of the present invention Since the polishing composition of the present invention is used, the effects that a substrate having excellent surface smoothness, including fewer surface defects such as surface stains, smaller waviness, or the like, can be efficiently manufactured are exhibited.
- the feature of the polishing composition of the present invention resides in that the polishing composition contains an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups. Since the polishing composition has the above feature, the effects that a substrate having excellent surface smoothness, including fewer surface defects such as surface stains, smaller waviness, or the like, can be efficiently manufactured are exhibited.
- the function mechanism in which the abrasive grains and polishing debris are prevented from remaining by the polishing composition of the present invention is yet unknown.
- the function is considered to be exhibited due to a synergistic effect of a combined use of a specified organic nitrogen-containing compound and an organic polybasic acid as explained below.
- an organic polybasic acid is adsorbed to the abrasive grains and the polishing debris, so that their surfaces are charged negatively and likely to deposit on the substrate, and an organic nitrogen-containing compound is adsorbed to the surfaces of abrasive grains and polishing debris adsorbed by the organic polybasic acid to electrically neutralize, thereby suppressing them to deposit or remain on the substrate.
- the organic nitrogen-containing compound used in the present invention refers to a compound having a total of two or more groups selected from an amino group and an imino group in the molecule.
- the organic nitrogen-containing compound used in the present invention has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups.
- the total number of the amino groups and the imino groups in the molecule is not particularly limited.
- the total number of the amino groups and the imino groups in the molecule is preferably from 2 to 2000, more preferably from 2 to 1000, even more preferably from 2 to 200, and even more preferably from 2 to 50, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- Specific examples thereof include polyalkyleneimines, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis(3-aminopropyl)amine, 1,3-propanediamine and the like.
- polyalkyleneimine examples include polyethyleneimine, polypropyleneimine, polybutadieneimine and the like, including those having a linear or branched structure, or those having a cyclic structure.
- the polyethyleneimine is preferable, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- the polyalkyleneimine has a molecular weight of preferably from 150 to 100000, more preferably from 200 to 30000, even more preferably from 200 to 10000, and even more preferably from 300 to 2000, from the viewpoint of increasing polishing rate and reducing surface stains on a substrate.
- the above-mentioned molecular weight can be determined as a number-average molecular weight according to ebulioscopy or viscosity method.
- the organic nitrogen-containing compound is contained in an amount of preferably from 0.001 to 0.5% by weight, more preferably from 0.001 to 0.3% by weight, and even more preferably from 0.001 to 0.1% by weight, of the polishing composition, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- the organic polybasic acid used in the present invention is preferably a sulfur-containing organic acid, a carboxylic acid, and a phosphorus-containing organic acid.
- the organic polybasic acid include organic sulfonic acids such as methanedisulfonic acid, ethanedisulfonic acid, phenoldisulfonic acid, and naphthalenedisulfonic acid; polycarboxylic acids such as oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, itaconic acid, malic acid, tartaric acid, citric acid, isocitric acid, phthalic acid, nitrilotriacetic acid, and ethylenediaminetetraacetic acid; phosphorus-containing organic acids such as hydroxyethylidene-1,1-diphosphonic acid, phosphonobutanetricarboxylic acid, and ethylenediaminetetramethylenephosphonic acid; and the like.
- succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid are preferable, citric acid, malic acid, and tartaric acid are more preferable, and citric acid is even more preferable, from the viewpoint of increasing polishing rate, reducing waviness and reducing roll-off.
- succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid are preferable, citric acid, malic acid, and tartaric acid are more preferable, and citric acid is even more preferable, from the viewpoint of increasing polishing rate, reducing waviness and reducing roll-off.
- These compounds may be used alone or in admixture of two or more kinds.
- the organic polybasic acid is contained in an amount of preferably 0.002% by weight or more, more preferably 0.005% by weight or more, even more preferably 0.007% by weight or more, and even more preferably 0.01% by weight or more, of the polishing composition, from the viewpoint of increasing polishing rate and reducing waviness.
- the organic polybasic acid is contained in an amount of preferably 20% by weight or less, more preferably 15% by weight or less, even more preferably 10% by weight or less, and even more preferably 5% by weight or less, of the polishing composition, from the viewpoint of surface quality and economic advantage.
- the organic polybasic acid is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition.
- the organic nitrogen-containing compound and the organic polybasic acid mentioned above are contained in a weight ratio, i.e. organic nitrogen-containing compound/organic polybasic acid, of preferably 1/1 or less, more preferably 1/2 or less, and even more preferably 1/5 or less, from the viewpoint of increasing the polishing rate.
- the weight ratio is preferably 1/10000 or more, more preferably 1/1000 or more, even more preferably 1/200 or more, and even more preferably 1/50 or more, from the viewpoint of preventing surface stains on a substrate.
- the weight ratio is preferably from 1/10000 to 1/1, more preferably from 1/1000 to 1/2, even more preferably from 1/500 to 1/5, even more preferably from 1/200 to 1/5, and even more preferably from 1/50 to 1/5, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- any abrasives generally employed for polishing can be used.
- the abrasive include, for instance, metals; carbides of metals or metalloids, nitrides of metals or metalloids, oxides of metals or metalloids, borides of metals or metalloids; diamond, and the like.
- the metals or metalloids include those elements belonging to the Groups 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or 8 of the Periodic Table (long period form).
- abrasive examples include aluminum oxide (hereinafter referred to as “alumina” in some cases) particles such as ⁇ -alumina particles and intermediate alumina particles, silicon carbide particles, diamond particles, magnesium oxide particles, zinc oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like.
- alumina aluminum oxide
- ⁇ -alumina particles and intermediate alumina particles silicon carbide particles
- diamond particles magnesium oxide particles, zinc oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like.
- ⁇ -alumina particles, intermediate alumina particles, cerium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like are preferable, and ⁇ -alumina particles, intermediate alumina particles, colloidal silica particles and fumed silica particles are more preferable, and ⁇ -alumina particles and intermediate alumina particles are even more preferable.
- aluminum oxide particles are preferable from the viewpoint of reducing abrasive grains and polishing debris. Further, effects of an even more increased polishing rate and reduction in waviness are obtained by a combined use of ⁇ -alumina and an intermediate alumina, or a combined use of ⁇ -alumina and colloidal silica or fumed silica.
- the alumina has a purity of 95% or more, more preferably 97% or more, and even more preferably 99% or more, from the viewpoint of reducing waviness, reducing surface roughness, increasing polishing rate, and preventing surface defects.
- ⁇ -alumina is preferable from the viewpoint of increasing polishing rate
- intermediate aluminas such as ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, and ⁇ -alumina are preferable, from the viewpoint of surface properties and reduction in waviness.
- the intermediate alumina used in the present invention is a generic term referring to alumina particles other than ⁇ -alumina particles.
- ⁇ -alumina examples thereof include ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, and mixtures thereof.
- the intermediate aluminas ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, and mixtures thereof are preferable, and ⁇ -alumina and ⁇ -alumina are even more preferable, from the viewpoint of increasing polishing rate and reducing waviness.
- the intermediate alumina has a specific surface area as determined by BET method of preferably from 30 to 300 m 2 /g, and more preferably from 50 to 200 m 2 /g.
- the primary particles of the above-mentioned abrasive have an average particle size of preferably from 0.001 to 2 ⁇ m, more preferably from 0.005 to 0.8 ⁇ m, and even more preferably from 0.01 to 0.5 ⁇ m, from the viewpoint of increasing polishing rate and reducing waviness.
- the secondary particles when the primary particles are aggregated to form secondary particles, the secondary particles have an average particle size of preferably from 0.02 to 3 ⁇ m, more preferably from 0.05 to 1 ⁇ m, even more preferably from 0.1 to 0.8 ⁇ m, and even more preferably from 0.1 to 0.5 ⁇ m, from the viewpoint of increasing polishing rate, reducing waviness, and inhibiting surface defects.
- the average particle size of the primary particles of the abrasive is obtained by subjecting the abrasive to an image analysis by observing with a scanning electron microscope in a magnification of favorably from 3000 to 30000 times, or with a transmission electron microscope in a magnification of favorably from 10000 to 500000 times, and determining the particle size.
- the average particle size of the secondary particles can be determined as a volume-average particle size by using a laser diffraction method.
- the specific gravity of the abrasive is preferably from 1.5 to 8, and more preferably from 1.5 to 5, from the viewpoints of dispersibility, feed ability to the polishing device and efficiency of recovery and reuse.
- the abrasive is contained in an amount of preferably from 0.05 to 40% by weight, more preferably from 0.1 to 30% by weight, even more preferably from 0.5 to 25% by weight, even more preferably from 1 to 20% by weight, and even more preferably from 1 to 10% by weight, of the polishing composition, from the viewpoint of economic advantage and increase in polishing rate.
- Water in the polishing composition of the present invention is used as a medium, and the water is contained in an amount of preferably from 55 to 99% by weight, more preferably from 60 to 97% by weight, and even more preferably from 70 to 95% by weight, of the polishing composition, from the viewpoint of efficiently polishing the object to be polished.
- polishing composition of the present invention can contain other components as occasion demands.
- an inorganic acid is used together in the polishing composition of the present invention, from the viewpoint of further increasing the polishing rate and reducing the waviness.
- the inorganic acid is preferably nitric acid, nitrous acid, sulfuric acid, sulfurous acid and amide sulfuric acid, and sulfuric acid, sulfurous acid and amide sulfuric acid are more preferable, and sulfuric acid is even more preferable, from the viewpoint of increasing the polishing rate.
- the inorganic acid is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition, from the viewpoint of polishing rate, surface quality and economic advantage.
- the polishing composition of the present invention contains an oxidizing agent, from the viewpoint of increasing the polishing rate.
- the oxidizing agent is roughly classified into inorganic oxidizing agents and organic oxidizing agents.
- the inorganic oxidizing agent there can be used hydrogen peroxide, a peroxide of an alkali metal or an alkaline earth metal, a peroxosulfuric acid or a salt thereof, peroxonitric acid or a salt thereof, a peroxophosphoric acid or a salt thereof, a peroxoborate, a peroxochromate, a permanganate, a halogeno-acid or a derivative thereof, a metal salt of an inorganic acid or the like.
- the organic oxidizing agent there can be used a percarboxylic acid, a peroxide, iron (III) citrate or the like.
- the inorganic oxidizing agent is preferable, when an increase of the polishing rate, availability, and easy handling, such as water-solubility are compared.
- an inorganic peroxide which does not contain a heavy metal is preferable.
- hydrogen peroxide, a peroxosulfate, a halogeno-acid or a derivative thereof are more preferable, and hydrogen peroxide is even more preferable, from the viewpoint of preventing the stains on the surface of the substrate to be polished.
- these oxidizing agents can be used alone or in admixture of two or more kinds.
- the oxidizing agent is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition, from the viewpoint of increase in polishing rate, reduction in waviness, surface quality, and economic advantage.
- other components for the polishing composition include celluloses such as cellulose, carboxymethyl cellulose, and hydroxyethyl cellulose; water-soluble alcohols such as ethanol, propanol, and ethylene glycol; and the like, and also include surfactants such as alkylbenzenesulfonates, formalin condensates of naphthalenesulfonic acid, polyacrylates, and ligninsulfonates; water-soluble polymers such as polyvinyl alcohol; and the like.
- surfactants such as alkylbenzenesulfonates, formalin condensates of naphthalenesulfonic acid, polyacrylates, and ligninsulfonates
- water-soluble polymers such as polyvinyl alcohol; and the like.
- the other components can be each contained in an amount of preferably from 0.001 to 20% by weight, more preferably from 0.01 to 5% by weight, and even more preferably from 0.01 to 2% by weight, of the polishing composition, from the viewpoint of exhibiting each of the functions and from the viewpoint of economic advantages.
- the concentration of each component mentioned above in the polishing composition is a preferred concentration upon use.
- the concentration upon the preparation of the polishing composition may be in a concentration higher than those defined above.
- the polishing composition is usually prepared as a concentrate, which is diluted upon use.
- the polishing composition of the present invention can be preferably used in polishing a substrate for a hard disk as a substrate to be polished.
- the substrate for a hard disk is not particularly limited as long as usually known ones are used, and includes, for example, a substrate having a metal layer formed on a surface layer such as a Ni—P plated aluminum alloy substrate, a Ni—P plated glass substrate, and an aluminum disk, a substrate made of a glassy substance or a ceramic material, such as a carbon disk and a glass substrate, a substrate composed of composites of the above substances and materials, and the like.
- the polishing composition of the present invention when used for a substrate having a metal layer formed on a surface layer such as a Ni—P plated aluminum alloy substrate, a Ni—P plated glass substrate, and an aluminum disk, it is preferable because the abrasive grains and the polishing debris can be remarkably reduced.
- the pH of the polishing composition is properly determined depending upon the kinds of the substrate to be polished.
- the pH of the polishing composition is preferably from 1 to 12, from the viewpoint of rinsability of the substrate, corrosion inhibition of the processing machine, and safety of an operator.
- the pH is preferably from 1 to 7, more preferably from 1 to 5, even more preferably from 1 to 4, even more preferably from 2 to 4, and even more preferably 2 or more and less than 3, from the viewpoint of increasing the polishing rate.
- the pH can be adjusted by properly formulating an inorganic acid, an organic acid, or a salt thereof, or a basic substance such as ammonia, sodium hydroxide, potassium hydroxide, or amine as occasion demands.
- the effects of preventing residual abrasive grains and polishing debris by the polishing composition can be evaluated by, for example, an observation with a microscope, an observation with a scanning electron microscope, or the like of the surface of the substrate after polishing.
- the effect can be evaluated by observing an edge portion of its inner diameter which is less likely to be cleaned off with these equipments.
- the surface of the substrate after polishing can be further evaluated by glow discharge optical emission spectrometry (GDOES) or the like.
- GDOES glow discharge optical emission spectrometry
- the present invention relates to a method for manufacturing a substrate, and a method for reducing surface stains of a substrate.
- Each of the method for manufacturing a substrate and the method for reducing surface stains of the present invention includes the step of polishing a substrate to be polished with the above-mentioned polishing composition.
- the substrate to be polished can be polished by feeding the polishing composition to the polishing side of the substrate pressed against platens to which a porous organic polymer-based polishing pad is attached, and moving the platens and/or the substrate, while applying a pressure. Therefore, the present invention also relates to a method for polishing a substrate using the above-mentioned polishing composition.
- each method includes the step of feeding the polishing composition to a substrate at a flow rate of preferably from 0.01 to 0.5 mL/min, more preferably from 0.02 to 0.3 mL/min, even more preferably from 0.03 to 0.2 mL/min, per 1 cm 2 of the substrate to be polished, and polishing the substrate with a polishing pad, from the viewpoint of increase in polishing rate and economic advantage.
- an example of the method for manufacturing a substrate or the method for reducing surface stains of a substrate of the present invention includes a method including the step of feeding the polishing composition of the present invention to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm 2 of the substrate, and polishing the substrate with a polishing pad
- the polishing pressure upon polishing the substrate is adjusted to a range of from 2 to 30 kPa, preferably from 2 to 20 kPa, and more preferably from 4 to 15 kPa, from the viewpoint of increasing polishing rate and reducing waviness.
- polishing rate is preferably from 0.05 to 8 ⁇ m/min, more preferably from 0.1 to 6 ⁇ m/min, even more preferably from 0.2 to 5 ⁇ m/min, and even more preferably from 0.4 to 4 ⁇ m/min, from the viewpoint of productivity and operability.
- the polishing composition of the present invention is especially effective in the polishing step, and the polishing composition can be similarly applied to grinding steps other than this, for example, lapping step, and the like.
- ⁇ -alumina average particle size of primary particles: 0.07 ⁇ m, average particle size of secondary particles: 0.3 ⁇ m, specific surface area: 15 m 2 /g, purity: 99.9%
- ⁇ -alumina average particle size of secondary particles: 0.2 ⁇ m, specific surface area: 120 m 2 /g, purity: 99.9%
- organic polybasic acid an organic nitrogen-containing compound, and other additives as listed in Table 1, and balance ion-exchanged water, while stirring, to give a polishing composition.
- Ni—P plated aluminum alloy substrate having a thickness of 1.27 mm, and a diameter of 3.5 inch (95 mm) (short-wavelength waviness: 3.8 nm and long-wavelength waviness: 1.6 nm, as determined by “Zygo New View 5032”) were polished, using a double-sided processing machine under the following setting conditions with each of the polishing compositions obtained in the Examples and Comparative Examples, to give a polished object, a Ni—P plated aluminum alloy substrate usable as a substrate for a magnetic recording medium.
- the setting conditions for the double-sided processing machine are as follows.
- Double-sided processing machine Model 9B, commercially available from SPEEDFAM CO., LTD.
- Polishing pad a polishing pad for a substrate for hard disk, commercially available from FUJIBO Rotational speed of a platen: 50 r/min.
- Flow rate for a polishing composition 100 mL/min (0.076 mL/min per 1 cm 2 of a substrate to be polished) Polishing time period: 4 min. Number of substrates introduced: 10
- Weights of each substrate before and after polishing were measured using a device commercially available from Sartorius under the trade name of BP-210S. Change in weight of each substrate was obtained, and an average of the change of 10 substrates was referred to as an amount reduced, and a value obtained by dividing the amount reduced by the polishing time is referred to as a rate of weight reduced.
- the rate of weight reduced is introduced into the following equation and converted to a polishing rate ( ⁇ m/min).
- Rate of Weight Reduced [Weight Before Polishing (g) ⁇ Weight After Polishing (g)]/Polishing Time (min)
- Polishing Rate ( ⁇ m/min) Rate of Weight Reduced (g/min)/Area of One Side of Substrate (mm 2 )/Ni—P Plating Density (g/cm 3 ) ⁇ 1000000
- a relative value of a polishing rate (relative rate) for each of the Examples and Comparative Examples is shown in Table 1, assuming that the polishing rate of Comparative Example 1 (1.2 ⁇ m/min) takes a standard value of 1.
- the waviness of each substrate after the polishing was determined for two kinds, short-wavelength waviness and long-wavelength waviness in accordance with the following conditions.
- a relative value of waviness for each of the Examples and Comparative Examples is shown in Table 1, assuming that each waviness of Comparative Example 1 (short-wavelength waviness: 0.40 nm, long-wavelength waviness: 0.42 nm) takes a standard value of 1. The lower the numerical value, the more the waviness being reduced.
- Citric Acid 1 — — 2 3 2 Citric Acid 1 — — 3 3 2 Citric Acid 1 Laurylamine Acetate 0.05 4 3 2 Citric Acid 1 N-(2-Hydroxypropyl)- 0.05 N,N,N- trimethylammonium formate 5 3 2 — — Polyethyleneimine 0.05 Molecular Weight 600 Other Component(s) Evaluation Results Name Short- Long- of (% by Polishing Surface Wavelength Wavelength Compound wt.) pH Rate Stains Waviness Waviness Ex. No.
- the polishing composition of the present invention can be suitably used, for example, in the manufacturing step for a substrate for a hard disk such as a memory hard disk.
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Abstract
The present invention provides a polishing composition containing an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups; a method for manufacturing a substrate with the polishing composition; and a method for reducing surface stains of a substrate with the polishing composition. The polishing composition can be suitably used, for example, in the manufacturing step for a substrate for a hard disk such as a memory hard disk.
Description
- This Application is a Divisional of co-pending U.S. application Ser. No. 11/288,294, which was filed Nov. 29, 2005, which claims priority to Japanese application JP2004-347212 filed in Japan on Nov. 30, 2004, the content of which is hereby incorporated by reference into this application.
- The present invention relates to a polishing composition, a method for manufacturing a substrate with the polishing composition, and a method for reducing surface stains on a substrate with the polishing composition.
- In recent years, in order to progress in minimizing a unit recording area and increasing storage capacity, hard disks are demanded to have a smaller flying height of a magnetic head or be prevented from surface defects such as surface stains.
- Therefore, conventionally, as disclosed in JP2002-164307 A, studies have been made on a polishing composition that enables smoother polishing of the surface of a substrate for a hard disk and that less likely causes surface defects. In addition, recently, in order to obtain a substrate having a desired surface quality in a given time period, studies have been made on the use of two or more stages of polishing steps.
- When abrasive grains used in a first-stage polishing step and polishing debris remain on a substrate for a hard disk obtained in the first-stage polishing step, the majority of these abrasive grains and polishing debris are removed in the second-stage polishing step. However, those that undesirably remain unremoved lead to cause defects. Also, although the residual abrasive grains and polishing debris in the first stage are indeed removed in the second-stage polishing step, they have undesirably disadvantageous influences on the second-stage polishing step, leading to generate scratches or pits on the substrate. In addition, those residual abrasive grains and polishing debris are even more undesirable in a case where the polishing is carried out only in a single stage, or a case where the polishing is carried out in a finishing step.
- In order to solve these disadvantages, it is important that the abrasive grains and the polishing debris are removed from the substrate at the termination of each stage of the polishing step. However, the studies on a polishing composition that gives a substrate having reduced surface stains have been hardly conducted, so that a technique of satisfactorily solving the disadvantage has not so far been known.
- The present invention relates to:
- [1] a polishing composition containing an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups;
[2] a method for manufacturing a substrate, including the step of feeding the polishing composition as defined in the above [α] to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate, and polishing the substrate with a polishing pad; and
[3] a method for reducing surface stains on a substrate, including the step of feeding the polishing composition as defined in the above [1] to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate, and polishing the substrate with a polishing pad. - The present invention relates to a polishing composition giving fewer residual abrasive grains and polishing debris generated by polishing on a polished substrate after polishing, higher polishing rates, and being capable of maintaining smoothness of the substrate; a method for manufacturing a substrate with the polishing composition; and a method for reducing surface stains on a substrate with the polishing composition.
- Since the polishing composition of the present invention is used, the effects that a substrate having excellent surface smoothness, including fewer surface defects such as surface stains, smaller waviness, or the like, can be efficiently manufactured are exhibited.
- These and other advantages of the present invention will be apparent from the following description.
- The feature of the polishing composition of the present invention, as mentioned above, resides in that the polishing composition contains an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups. Since the polishing composition has the above feature, the effects that a substrate having excellent surface smoothness, including fewer surface defects such as surface stains, smaller waviness, or the like, can be efficiently manufactured are exhibited.
- Here, the function mechanism in which the abrasive grains and polishing debris are prevented from remaining by the polishing composition of the present invention is yet unknown. Although not wanting to be limited by theory, the function is considered to be exhibited due to a synergistic effect of a combined use of a specified organic nitrogen-containing compound and an organic polybasic acid as explained below.
- Also, while the function mechanism is yet unknown, it is deduced that an organic polybasic acid is adsorbed to the abrasive grains and the polishing debris, so that their surfaces are charged negatively and likely to deposit on the substrate, and an organic nitrogen-containing compound is adsorbed to the surfaces of abrasive grains and polishing debris adsorbed by the organic polybasic acid to electrically neutralize, thereby suppressing them to deposit or remain on the substrate.
- The organic nitrogen-containing compound used in the present invention refers to a compound having a total of two or more groups selected from an amino group and an imino group in the molecule. Specifically, the organic nitrogen-containing compound used in the present invention has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups. The total number of the amino groups and the imino groups in the molecule is not particularly limited. The total number of the amino groups and the imino groups in the molecule is preferably from 2 to 2000, more preferably from 2 to 1000, even more preferably from 2 to 200, and even more preferably from 2 to 50, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate. Specific examples thereof include polyalkyleneimines, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis(3-aminopropyl)amine, 1,3-propanediamine and the like.
- Representative examples of the polyalkyleneimine include polyethyleneimine, polypropyleneimine, polybutadieneimine and the like, including those having a linear or branched structure, or those having a cyclic structure. Among them, the polyethyleneimine is preferable, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate. The polyalkyleneimine has a molecular weight of preferably from 150 to 100000, more preferably from 200 to 30000, even more preferably from 200 to 10000, and even more preferably from 300 to 2000, from the viewpoint of increasing polishing rate and reducing surface stains on a substrate. The above-mentioned molecular weight can be determined as a number-average molecular weight according to ebulioscopy or viscosity method.
- In addition, the organic nitrogen-containing compound is contained in an amount of preferably from 0.001 to 0.5% by weight, more preferably from 0.001 to 0.3% by weight, and even more preferably from 0.001 to 0.1% by weight, of the polishing composition, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- The organic polybasic acid used in the present invention is preferably a sulfur-containing organic acid, a carboxylic acid, and a phosphorus-containing organic acid. Specific examples of the organic polybasic acid include organic sulfonic acids such as methanedisulfonic acid, ethanedisulfonic acid, phenoldisulfonic acid, and naphthalenedisulfonic acid; polycarboxylic acids such as oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, itaconic acid, malic acid, tartaric acid, citric acid, isocitric acid, phthalic acid, nitrilotriacetic acid, and ethylenediaminetetraacetic acid; phosphorus-containing organic acids such as hydroxyethylidene-1,1-diphosphonic acid, phosphonobutanetricarboxylic acid, and ethylenediaminetetramethylenephosphonic acid; and the like. Among them, succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid are preferable, citric acid, malic acid, and tartaric acid are more preferable, and citric acid is even more preferable, from the viewpoint of increasing polishing rate, reducing waviness and reducing roll-off. These compounds may be used alone or in admixture of two or more kinds.
- The organic polybasic acid is contained in an amount of preferably 0.002% by weight or more, more preferably 0.005% by weight or more, even more preferably 0.007% by weight or more, and even more preferably 0.01% by weight or more, of the polishing composition, from the viewpoint of increasing polishing rate and reducing waviness. In addition, the organic polybasic acid is contained in an amount of preferably 20% by weight or less, more preferably 15% by weight or less, even more preferably 10% by weight or less, and even more preferably 5% by weight or less, of the polishing composition, from the viewpoint of surface quality and economic advantage. In other words, the organic polybasic acid is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition.
- In addition, in the polishing composition of the present invention, the organic nitrogen-containing compound and the organic polybasic acid mentioned above are contained in a weight ratio, i.e. organic nitrogen-containing compound/organic polybasic acid, of preferably 1/1 or less, more preferably 1/2 or less, and even more preferably 1/5 or less, from the viewpoint of increasing the polishing rate. In addition, the weight ratio is preferably 1/10000 or more, more preferably 1/1000 or more, even more preferably 1/200 or more, and even more preferably 1/50 or more, from the viewpoint of preventing surface stains on a substrate. In other words, the weight ratio is preferably from 1/10000 to 1/1, more preferably from 1/1000 to 1/2, even more preferably from 1/500 to 1/5, even more preferably from 1/200 to 1/5, and even more preferably from 1/50 to 1/5, from the viewpoint of increasing polishing rate and preventing surface stains on a substrate.
- As the abrasive to be used in the present invention, any abrasives generally employed for polishing can be used. Examples of the abrasive include, for instance, metals; carbides of metals or metalloids, nitrides of metals or metalloids, oxides of metals or metalloids, borides of metals or metalloids; diamond, and the like. The metals or metalloids include those elements belonging to the Groups 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or 8 of the Periodic Table (long period form). Specific examples of the abrasive include aluminum oxide (hereinafter referred to as “alumina” in some cases) particles such as α-alumina particles and intermediate alumina particles, silicon carbide particles, diamond particles, magnesium oxide particles, zinc oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like. Among them, α-alumina particles, intermediate alumina particles, cerium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like are preferable, and α-alumina particles, intermediate alumina particles, colloidal silica particles and fumed silica particles are more preferable, and α-alumina particles and intermediate alumina particles are even more preferable. In addition, aluminum oxide particles are preferable from the viewpoint of reducing abrasive grains and polishing debris. Further, effects of an even more increased polishing rate and reduction in waviness are obtained by a combined use of α-alumina and an intermediate alumina, or a combined use of α-alumina and colloidal silica or fumed silica.
- Among the α-alumina and the intermediate alumina mentioned above, it is preferable that the alumina has a purity of 95% or more, more preferably 97% or more, and even more preferably 99% or more, from the viewpoint of reducing waviness, reducing surface roughness, increasing polishing rate, and preventing surface defects. In addition, α-alumina is preferable from the viewpoint of increasing polishing rate, and intermediate aluminas such as γ-alumina, δ-alumina, θ-alumina, η-alumina, and κ-alumina are preferable, from the viewpoint of surface properties and reduction in waviness. Here, the intermediate alumina used in the present invention is a generic term referring to alumina particles other than α-alumina particles. Specific examples thereof include γ-alumina, δ-alumina, θ-alumina, η-alumina, κ-alumina, and mixtures thereof. Among the intermediate aluminas, γ-alumina, δ-alumina, θ-alumina, and mixtures thereof are preferable, and γ-alumina and θ-alumina are even more preferable, from the viewpoint of increasing polishing rate and reducing waviness.
- Even more, in the case of the intermediate alumina, the intermediate alumina has a specific surface area as determined by BET method of preferably from 30 to 300 m2/g, and more preferably from 50 to 200 m2/g.
- The primary particles of the above-mentioned abrasive have an average particle size of preferably from 0.001 to 2 μm, more preferably from 0.005 to 0.8 μm, and even more preferably from 0.01 to 0.5 μm, from the viewpoint of increasing polishing rate and reducing waviness. Further, when the primary particles are aggregated to form secondary particles, the secondary particles have an average particle size of preferably from 0.02 to 3 μm, more preferably from 0.05 to 1 μm, even more preferably from 0.1 to 0.8 μm, and even more preferably from 0.1 to 0.5 μm, from the viewpoint of increasing polishing rate, reducing waviness, and inhibiting surface defects. The average particle size of the primary particles of the abrasive is obtained by subjecting the abrasive to an image analysis by observing with a scanning electron microscope in a magnification of favorably from 3000 to 30000 times, or with a transmission electron microscope in a magnification of favorably from 10000 to 500000 times, and determining the particle size. In addition, the average particle size of the secondary particles can be determined as a volume-average particle size by using a laser diffraction method.
- The specific gravity of the abrasive is preferably from 1.5 to 8, and more preferably from 1.5 to 5, from the viewpoints of dispersibility, feed ability to the polishing device and efficiency of recovery and reuse.
- The abrasive is contained in an amount of preferably from 0.05 to 40% by weight, more preferably from 0.1 to 30% by weight, even more preferably from 0.5 to 25% by weight, even more preferably from 1 to 20% by weight, and even more preferably from 1 to 10% by weight, of the polishing composition, from the viewpoint of economic advantage and increase in polishing rate.
- Water in the polishing composition of the present invention is used as a medium, and the water is contained in an amount of preferably from 55 to 99% by weight, more preferably from 60 to 97% by weight, and even more preferably from 70 to 95% by weight, of the polishing composition, from the viewpoint of efficiently polishing the object to be polished.
- In addition, the polishing composition of the present invention can contain other components as occasion demands.
- It is preferable that an inorganic acid is used together in the polishing composition of the present invention, from the viewpoint of further increasing the polishing rate and reducing the waviness. The inorganic acid is preferably nitric acid, nitrous acid, sulfuric acid, sulfurous acid and amide sulfuric acid, and sulfuric acid, sulfurous acid and amide sulfuric acid are more preferable, and sulfuric acid is even more preferable, from the viewpoint of increasing the polishing rate. The inorganic acid is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition, from the viewpoint of polishing rate, surface quality and economic advantage.
- In addition, it is preferable that the polishing composition of the present invention contains an oxidizing agent, from the viewpoint of increasing the polishing rate. The oxidizing agent is roughly classified into inorganic oxidizing agents and organic oxidizing agents. As the inorganic oxidizing agent, there can be used hydrogen peroxide, a peroxide of an alkali metal or an alkaline earth metal, a peroxosulfuric acid or a salt thereof, peroxonitric acid or a salt thereof, a peroxophosphoric acid or a salt thereof, a peroxoborate, a peroxochromate, a permanganate, a halogeno-acid or a derivative thereof, a metal salt of an inorganic acid or the like. As the organic oxidizing agent, there can be used a percarboxylic acid, a peroxide, iron (III) citrate or the like. Among them, the inorganic oxidizing agent is preferable, when an increase of the polishing rate, availability, and easy handling, such as water-solubility are compared. Especially, in consideration of the environmental problems, an inorganic peroxide which does not contain a heavy metal is preferable. In addition, hydrogen peroxide, a peroxosulfate, a halogeno-acid or a derivative thereof are more preferable, and hydrogen peroxide is even more preferable, from the viewpoint of preventing the stains on the surface of the substrate to be polished. In addition, these oxidizing agents can be used alone or in admixture of two or more kinds.
- The oxidizing agent is contained in an amount of preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition, from the viewpoint of increase in polishing rate, reduction in waviness, surface quality, and economic advantage.
- In addition, other components for the polishing composition include celluloses such as cellulose, carboxymethyl cellulose, and hydroxyethyl cellulose; water-soluble alcohols such as ethanol, propanol, and ethylene glycol; and the like, and also include surfactants such as alkylbenzenesulfonates, formalin condensates of naphthalenesulfonic acid, polyacrylates, and ligninsulfonates; water-soluble polymers such as polyvinyl alcohol; and the like. These components can be used alone or in admixture of two or more kinds. The other components can be each contained in an amount of preferably from 0.001 to 20% by weight, more preferably from 0.01 to 5% by weight, and even more preferably from 0.01 to 2% by weight, of the polishing composition, from the viewpoint of exhibiting each of the functions and from the viewpoint of economic advantages.
- The concentration of each component mentioned above in the polishing composition is a preferred concentration upon use. The concentration upon the preparation of the polishing composition may be in a concentration higher than those defined above. In many cases, the polishing composition is usually prepared as a concentrate, which is diluted upon use.
- The polishing composition of the present invention can be preferably used in polishing a substrate for a hard disk as a substrate to be polished. The substrate for a hard disk is not particularly limited as long as usually known ones are used, and includes, for example, a substrate having a metal layer formed on a surface layer such as a Ni—P plated aluminum alloy substrate, a Ni—P plated glass substrate, and an aluminum disk, a substrate made of a glassy substance or a ceramic material, such as a carbon disk and a glass substrate, a substrate composed of composites of the above substances and materials, and the like. Among them, when the polishing composition of the present invention is used for a substrate having a metal layer formed on a surface layer such as a Ni—P plated aluminum alloy substrate, a Ni—P plated glass substrate, and an aluminum disk, it is preferable because the abrasive grains and the polishing debris can be remarkably reduced.
- It is preferable that the pH of the polishing composition is properly determined depending upon the kinds of the substrate to be polished. For example, it is preferable that the pH of the polishing composition is preferably from 1 to 12, from the viewpoint of rinsability of the substrate, corrosion inhibition of the processing machine, and safety of an operator. When the main subject for a substrate to be rinsed is a substrate having a metal layer formed on a surface layer such as a Ni—P plated aluminum alloy substrate, a Ni—P plated glass substrate, and an aluminum disk, the pH is preferably from 1 to 7, more preferably from 1 to 5, even more preferably from 1 to 4, even more preferably from 2 to 4, and even more preferably 2 or more and less than 3, from the viewpoint of increasing the polishing rate. The pH can be adjusted by properly formulating an inorganic acid, an organic acid, or a salt thereof, or a basic substance such as ammonia, sodium hydroxide, potassium hydroxide, or amine as occasion demands.
- In the present invention, the effects of preventing residual abrasive grains and polishing debris by the polishing composition can be evaluated by, for example, an observation with a microscope, an observation with a scanning electron microscope, or the like of the surface of the substrate after polishing. Among them, in the substrate for a hard disk, the effect can be evaluated by observing an edge portion of its inner diameter which is less likely to be cleaned off with these equipments. In addition, the surface of the substrate after polishing can be further evaluated by glow discharge optical emission spectrometry (GDOES) or the like.
- By using the polishing composition of the present invention having the constitution mentioned above, in the step of polishing in the method for manufacturing a substrate, such as a substrate for a hard disk, the residual abrasive grains and polishing debris generated by polishing on the substrate, in other words, surface stains are prevented, so that the substrate has less surface defects such as scratches and pits on its surface, whereby a substrate having less abrasive grains and polishing debris can be manufactured. Therefore, the present invention relates to a method for manufacturing a substrate, and a method for reducing surface stains of a substrate.
- Each of the method for manufacturing a substrate and the method for reducing surface stains of the present invention includes the step of polishing a substrate to be polished with the above-mentioned polishing composition. In this step, the substrate to be polished can be polished by feeding the polishing composition to the polishing side of the substrate pressed against platens to which a porous organic polymer-based polishing pad is attached, and moving the platens and/or the substrate, while applying a pressure. Therefore, the present invention also relates to a method for polishing a substrate using the above-mentioned polishing composition.
- In the method for manufacturing a substrate and the method for reducing surface stains of a substrate of the present invention, it is preferable that each method includes the step of feeding the polishing composition to a substrate at a flow rate of preferably from 0.01 to 0.5 mL/min, more preferably from 0.02 to 0.3 mL/min, even more preferably from 0.03 to 0.2 mL/min, per 1 cm2 of the substrate to be polished, and polishing the substrate with a polishing pad, from the viewpoint of increase in polishing rate and economic advantage. Therefore, an example of the method for manufacturing a substrate or the method for reducing surface stains of a substrate of the present invention includes a method including the step of feeding the polishing composition of the present invention to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate, and polishing the substrate with a polishing pad
- In addition, in the method for manufacturing a substrate of the present invention, it is desired that the polishing pressure upon polishing the substrate is adjusted to a range of from 2 to 30 kPa, preferably from 2 to 20 kPa, and more preferably from 4 to 15 kPa, from the viewpoint of increasing polishing rate and reducing waviness.
- In addition, other conditions when the polishing is carried out, such as kinds of polishing machine, kinds of polishing pads, polishing temperature, and polishing rate, are not particularly limited. When a Ni—P plated aluminum alloy substrate is polished with an abrasive containing aluminum oxide particles, the polishing rate is preferably from 0.05 to 8 μm/min, more preferably from 0.1 to 6 μm/min, even more preferably from 0.2 to 5 μm/min, and even more preferably from 0.4 to 4 μm/min, from the viewpoint of productivity and operability.
- The polishing composition of the present invention is especially effective in the polishing step, and the polishing composition can be similarly applied to grinding steps other than this, for example, lapping step, and the like.
- The following examples further describe and demonstrate embodiments of the present invention. The examples are given solely for the purposes of illustration and are not to be construed as limitations of the present invention.
- There were mixed together given amounts of α-alumina (average particle size of primary particles: 0.07 μm, average particle size of secondary particles: 0.3 μm, specific surface area: 15 m2/g, purity: 99.9%), θ-alumina (average particle size of secondary particles: 0.2 μm, specific surface area: 120 m2/g, purity: 99.9%), an organic polybasic acid, an organic nitrogen-containing compound, and other additives as listed in Table 1, and balance ion-exchanged water, while stirring, to give a polishing composition.
- Surfaces of a Ni—P plated aluminum alloy substrate having a thickness of 1.27 mm, and a diameter of 3.5 inch (95 mm) (short-wavelength waviness: 3.8 nm and long-wavelength waviness: 1.6 nm, as determined by “Zygo New View 5032”) were polished, using a double-sided processing machine under the following setting conditions with each of the polishing compositions obtained in the Examples and Comparative Examples, to give a polished object, a Ni—P plated aluminum alloy substrate usable as a substrate for a magnetic recording medium.
- The setting conditions for the double-sided processing machine are as follows.
- Double-sided processing machine: Model 9B, commercially available from SPEEDFAM CO., LTD.
- Processing pressure: 9.8 kPa
Polishing pad: a polishing pad for a substrate for hard disk, commercially available from FUJIBO
Rotational speed of a platen: 50 r/min.
Flow rate for a polishing composition: 100 mL/min (0.076 mL/min per 1 cm2 of a substrate to be polished)
Polishing time period: 4 min.
Number of substrates introduced: 10 - Weights of each substrate before and after polishing were measured using a device commercially available from Sartorius under the trade name of BP-210S. Change in weight of each substrate was obtained, and an average of the change of 10 substrates was referred to as an amount reduced, and a value obtained by dividing the amount reduced by the polishing time is referred to as a rate of weight reduced. The rate of weight reduced is introduced into the following equation and converted to a polishing rate (μm/min).
-
Rate of Weight Reduced (g/min)=[Weight Before Polishing (g)−Weight After Polishing (g)]/Polishing Time (min) -
Polishing Rate (μm/min)=Rate of Weight Reduced (g/min)/Area of One Side of Substrate (mm2)/Ni—P Plating Density (g/cm3)×1000000 - Here, a relative value of a polishing rate (relative rate) for each of the Examples and Comparative Examples is shown in Table 1, assuming that the polishing rate of Comparative Example 1 (1.2 μm/min) takes a standard value of 1.
- The surface of each of the substrates after polishing was observed with a scanning electron microscope S-4000 commercially available from Hitachi, Ltd. in a magnification of 10,000, and the following 5-rank evaluations were made. Here, those ranked in 1 and 2 are failures from the viewpoint of practical purposes.
-
- 5: no alumina residue, polishing debris or the like is observed on the surface at all on the surface;
- 4: alumina residue, polishing debris or the like is observed but in less amounts on the surface;
- 3: alumina residue, polishing debris or the like is observed but in slight amounts on the surface;
- 2: alumina residue, polishing debris or the like is observed but in large amounts on the surface; and
- 1: alumina residue, polishing debris or the like is observed but in much amounts on the surface.
- The waviness of each substrate after the polishing was determined for two kinds, short-wavelength waviness and long-wavelength waviness in accordance with the following conditions. A relative value of waviness for each of the Examples and Comparative Examples is shown in Table 1, assuming that each waviness of Comparative Example 1 (short-wavelength waviness: 0.40 nm, long-wavelength waviness: 0.42 nm) takes a standard value of 1. The lower the numerical value, the more the waviness being reduced.
-
Device: Zygo New View 5032 Object Lens: Magnification, 2.5 times, Michelson Zooming Ratio: 0.5 Remove: Cylinder Filter type: FFT Fixed Band Pass Short-Wavelength Waviness: 50 to 500 μm Long-Wavelength Waviness: 0.5 to 5 mm Area: 4.33 mm × 5.77 mm -
TABLE 1 Organic Organic Nitrogen- α- θ- Polybasic Acid Containing Compound Alumina Alumina Name of (% by (% by (% by wt.) (% by wt.) Compound wt.) Name of Compound wt.) Ex. No. 1 3 2 Citric Acid 1 Polyethyleneimine 0.05 Molecular Weight 300 2 3 2 Citric Acid 1 Polyethyleneimine 0.003 Molecular Weight 600 3 3 2 Citric Acid 1 Polyethyleneimine 0.01 Molecular Weight 600 4 3 2 Citric Acid 1 Polyethyleneimine 0.05 Molecular Weight 600 5 3 2 Citric Acid 1 Polyethyleneimine 0.05 Molecular Weight 2000 6 3 2 Citric Acid 1 Triethylenetetramine 0.05 7 3 2 Citric Acid 1 Bis(3-aminopropyl)amine 0.05 8 3 2 Citric Acid 1 1,3-Propanediamine 0.05 9 3 2 Citric Acid 1 Polyethyleneimine 0.05 Molecular Weight 600 10 3 2 Citric Acid 1 Polyethyleneimine 0.05 Molecular Weight 600 11 3 2 Citric Acid/ 0.5/0.5 Polyethyleneimine 0.05 Succinic Molecular Weight 600 Acid 12 3 2 Succinic 1 Polyethyleneimine 0.05 Acid Molecular Weight 600 13 3 2 Malic Acid 1 Polyethyleneimine 0.05 Molecular Weight 600 Comp. Ex. No. 1 3 2 Citric Acid 1 — — 2 3 2 Citric Acid 1 — — 3 3 2 Citric Acid 1 Laurylamine Acetate 0.05 4 3 2 Citric Acid 1 N-(2-Hydroxypropyl)- 0.05 N,N,N- trimethylammonium formate 5 3 2 — — Polyethyleneimine 0.05 Molecular Weight 600 Other Component(s) Evaluation Results Name Short- Long- of (% by Polishing Surface Wavelength Wavelength Compound wt.) pH Rate Stains Waviness Waviness Ex. No. 1 Hydrogen 0.6/0.6 2 2.5 5 0.98 0.70 Peroxide/ Sulfuric Acid 2 Hydrogen 0.6/0.6 2 2.3 4 0.94 0.73 Peroxide/ Sulfuric Acid 3 Hydrogen 0.6/0.6 2 2.2 4 0.94 0.75 Peroxide/ Sulfuric Acid 4 Hydrogen 0.6/0.6 2 2.1 5 0.93 0.77 Peroxide/ Sulfuric Acid 5 Hydrogen 0.6/0.6 2 1.8 4 0.93 0.80 Peroxide/ Sulfuric Acid 6 Hydrogen 0.6/0.6 2 2.2 4 0.95 0.88 Peroxide/ Sulfuric Acid 7 Hydrogen 0.6/0.6 2 2.2 4 0.96 0.82 Peroxide/ Sulfuric Acid 8 Hydrogen 0.6/0.6 2 2.2 4 0.97 0.83 Peroxide/ Sulfuric Acid 9 Polyphosphoric 0.04 2.5 1.0 5 0.96 1.0 Acid 10 Ammonium 0.1 2.5 1.0 4 0.97 1.0 Sulfate 11 — — 2.5 1.1 5 0.95 0.98 12 — — 2.5 1.1 5 1.0 0.98 13 — — 2.5 1.0 5 1.0 1.0 Comp. Ex. No. 1 — — 2.5 1 1 1 1 2 Hydrogen 0.6/0.6 2 2.4 1 0.97 0.75 Peroxide/ Sulfuric Acid 3 — — 2.5 0.7 2 0.95 1.2 4 — — 2.5 0.9 1 0.98 1.1 5 Glycolic Acid/ 1/0.04 3 0.6 4 1.1 1.1 Polyphosphoric Acid - It can be seen from the above results shown in Table 1 that the polishing compositions obtained in Examples 1 to 13 give significantly reduced surface stains of the substrate after polishing, and are less likely to generate waviness on the substrate.
- The polishing composition of the present invention can be suitably used, for example, in the manufacturing step for a substrate for a hard disk such as a memory hard disk.
- The present invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (21)
1. A method for manufacturing a polished substrate for a hard disk, comprising the step of:
feeding a polishing composition comprising an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups to a substrate for a hard disk, and polishing the substrate with a polishing pad.
2. The method according to claim 1 , wherein the abrasive is an alumina.
3. The method according to claim 1 , wherein the organic nitrogen-containing compound has a molecular weight of from 150 to 100000.
4. The method according to claim 1 , wherein the organic nitrogen-containing compound is contained in an amount of from 0.001 to 0.5% by weight of the polishing composition.
5. The method according to claim 1 , wherein the organic nitrogen-containing compound and the organic polybasic acid are contained in a weight ratio of the organic nitrogen-containing compound/the organic polybasic acid of from 1/10000 to 1/1.
6. The method according to claim 1 , further comprising an oxidizing agent.
7. The method according to claim 1 , wherein the polishing composition has a pH of from 1 to 7.
8. The method according to claim 1 , wherein a flow rate of the polishing composition is from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate.
9. The method according to claim 1 , wherein a polishing pressure is from 2 to 30 kPa.
10. A method for manufacturing a polished substrate, comprising the steps of:
feeding a polishing composition comprising an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, an oxidizing agent consisting essentially of hydrogen peroxide and water, wherein the organic nitrogen-containing compound is one or more members selected from the group consisting of polyalkyleneimines having a molecular weight of from 300 to 2000, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis(3-aminopropyl)amine, and 1,3-propanediamine, and wherein the polishing composition has a pH of from 1 to 4 to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate, and
polishing the substrate with a polishing pad.
11. The method according to claim 10 , wherein a polishing pressure is from 2 to 30 kPa.
12. A method for reducing surface stains on a substrate for a hard disk, comprising the steps of:
feeding a polishing composition comprising an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups to a substrate for a hard disk, and polishing the substrate with a polishing pad.
13. The method according to claim 12 , wherein the abrasive is an alumina.
14. The method according to claim 12 , wherein the organic nitrogen-containing compound has a molecular weight of from 150 to 100000.
15. The method according to claim 12 , wherein the organic nitrogen-containing compound is contained in an amount of from 0.001 to 0.5% by weight of the polishing composition.
16. The method according to claim 12 , wherein the organic nitrogen-containing compound and the organic polybasic acid are contained in a weight ratio of the organic nitrogen-containing compound/the organic polybasic acid of from 1/10000 to 1/1.
17. The method according to claim 12 , further comprising an oxidizing agent.
18. The method according to claim 12 , wherein the polishing composition has a pH of from 1 to 7.
19. The method according to claim 12 , wherein a flow rate of the polishing composition is from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate.
20. The method according to claim 12 , wherein a polishing pressure is from 2 to 30 kPa.
21. A method for reducing surface stains on a substrate, comprising the steps of:
feeding a polishing composition comprising an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, an oxidizing agent consisting essentially of hydrogen peroxide and water, wherein the organic nitrogen-containing compound is one or more members selected from the group consisting of polyalkyleneimines having a molecular weight of from 300 to 2000, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis(3-aminopropyl)amine, and 1,3-propanediamine, and wherein the polishing composition has a pH of from 1 to 4 to a substrate to be polished at a flow rate of from 0.01 to 0.5 mL/minute per 1 cm2 of the substrate, and
polishing the substrate with a polishing pad.
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US9959985B2 (en) | 2012-08-21 | 2018-05-01 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Aqueous liquid composition, aqueous coating liquid, functional coating film and composite material |
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CN102108281A (en) * | 2009-12-25 | 2011-06-29 | 花王株式会社 | Polishing composition |
US20110155690A1 (en) * | 2009-12-25 | 2011-06-30 | Norihito Yamaguchi | Polishing method |
TWI479015B (en) * | 2009-12-25 | 2015-04-01 | Kao Corp | The abrasive composition |
US9159352B2 (en) | 2010-12-16 | 2015-10-13 | Kao Corporation | Polishing liquid composition for magnetic disk substrate |
US10400115B2 (en) | 2011-02-23 | 2019-09-03 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Aqueous liquid composition, aqueous coating, functional coating film, and composite material |
US9959985B2 (en) | 2012-08-21 | 2018-05-01 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Aqueous liquid composition, aqueous coating liquid, functional coating film and composite material |
Also Published As
Publication number | Publication date |
---|---|
US20060112647A1 (en) | 2006-06-01 |
GB0523438D0 (en) | 2005-12-28 |
CN1781971A (en) | 2006-06-07 |
GB2421244B (en) | 2009-03-18 |
CN1781971B (en) | 2010-05-05 |
TWI370844B (en) | 2012-08-21 |
JP2006150534A (en) | 2006-06-15 |
TW200621967A (en) | 2006-07-01 |
MY144163A (en) | 2011-08-15 |
GB2421244A (en) | 2006-06-21 |
JP4836441B2 (en) | 2011-12-14 |
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