MX359183B - Metodo y sistema para mejorar rendimiento de fabricacion de celda solar. - Google Patents

Metodo y sistema para mejorar rendimiento de fabricacion de celda solar.

Info

Publication number
MX359183B
MX359183B MX2016004789A MX2016004789A MX359183B MX 359183 B MX359183 B MX 359183B MX 2016004789 A MX2016004789 A MX 2016004789A MX 2016004789 A MX2016004789 A MX 2016004789A MX 359183 B MX359183 B MX 359183B
Authority
MX
Mexico
Prior art keywords
processing station
solar cell
cell manufacturing
storage apparatus
wafer storage
Prior art date
Application number
MX2016004789A
Other languages
English (en)
Other versions
MX2016004789A (es
Inventor
Jiunn Benjamin Heng
Zheng Xu
Xiao Chunguang
Yan Dongzhi
Zhou Jiansheng
Huang Zhiquan
Original Assignee
Solarcity Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarcity Corp filed Critical Solarcity Corp
Publication of MX2016004789A publication Critical patent/MX2016004789A/es
Publication of MX359183B publication Critical patent/MX359183B/es

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1916—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1924—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/30—Sulfur compounds
    • B01D2257/302—Sulfur oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/30—Sulfur compounds
    • B01D2257/304—Hydrogen sulfide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/40—Nitrogen compounds
    • B01D2257/404—Nitrogen oxides other than dinitrogen oxide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/40—Nitrogen compounds
    • B01D2257/406—Ammonia
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/70—Organic compounds not provided for in groups B01D2257/00 - B01D2257/602
    • B01D2257/708—Volatile organic compounds V.O.C.'s
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/06—Polluted air
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/45—Gas separation or purification devices adapted for specific applications
    • B01D2259/4508—Gas separation or purification devices adapted for specific applications for cleaning air in buildings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)

Abstract

Se describe un sistema para fabricar celdas solares en una instalación de fabricación de celda solar a gran escala; el sistema incluye una primera estación de procesamiento, una segunda estación de procesamiento, y un aparato de almacenamiento de oblea colocado entre la primera estación de procesamiento y la segunda estación de procesamiento; un microambiente dentro del aparto de almacenamiento de oblea está sustancialmente separado de un ambiente grande de la instalación de fabricación de celda solar a gran escala, y el ambiente es filtrado para reducir químicos, humedad, y compuesto orgánico volátil; el aparato de almacenamiento de oblea está configurado para almacenar temporalmente obleas que emergen de la primera estación de procesamiento y hacer que se formen para procesamiento en la segunda estación de procesamiento.
MX2016004789A 2015-02-17 2015-02-17 Metodo y sistema para mejorar rendimiento de fabricacion de celda solar. MX359183B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2015/073221 WO2016131190A1 (en) 2015-02-17 2015-02-17 Method and system for improving solar cell manufacturing yield

Publications (2)

Publication Number Publication Date
MX2016004789A MX2016004789A (es) 2017-04-27
MX359183B true MX359183B (es) 2018-09-17

Family

ID=56156810

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016004789A MX359183B (es) 2015-02-17 2015-02-17 Metodo y sistema para mejorar rendimiento de fabricacion de celda solar.

Country Status (7)

Country Link
US (3) US20160240722A1 (es)
EP (1) EP3167493A4 (es)
JP (1) JP2017518626A (es)
CN (3) CN205752206U (es)
MX (1) MX359183B (es)
TW (1) TWI607579B (es)
WO (1) WO2016131190A1 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016114292A1 (de) * 2016-08-02 2018-02-08 Khs Corpoplast Gmbh Verfahren zum Beschichten von Kunststoffbehältern
CN108091722B (zh) * 2016-11-23 2021-03-02 上海理想万里晖薄膜设备有限公司 一种自动上下料及自动翻片系统及其工作方法
US20180269081A1 (en) * 2017-03-20 2018-09-20 Globalfoundries Inc. System and method for status-dependent controlling of a substrate ambient in microprocessing
JP6994866B2 (ja) * 2017-08-09 2022-01-14 株式会社カネカ 光電変換素子の製造方法
JP6994867B2 (ja) * 2017-08-09 2022-01-14 株式会社カネカ 光電変換素子の製造方法
JP6899731B2 (ja) * 2017-08-09 2021-07-07 株式会社カネカ 光電変換素子の製造方法
WO2019031029A1 (ja) * 2017-08-09 2019-02-14 株式会社カネカ 光電変換素子の製造方法
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
CN113330584B (zh) * 2019-01-24 2024-04-23 株式会社钟化 太阳能电池制造用基板托盘及太阳能电池的制造方法
GB2583118B (en) * 2019-04-17 2021-09-08 Crypto Quantique Ltd Device identification with quantum tunnelling currents
CN111403534B (zh) * 2020-03-27 2022-04-15 晶澳（扬州）太阳能科技有限公司 一种太阳能电池及其制备方法
CN112599636B (zh) * 2020-12-07 2023-08-01 浙江晶科能源有限公司 一种晶体硅太阳能电池的制备方法及晶体硅太阳能电池

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1913676A1 (de) 1969-03-18 1970-09-24 Siemens Ag Verfahren zum Abscheiden von Schichten aus halbleitendem bzw. isolierendem Material aus einem stroemenden Reaktionsgas auf erhitzte Halbleiterkristalle bzw. zum Dotieren solcher Kristalle aus einem stroemenden dotierenden Gas
US3603284A (en) 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US4193756A (en) 1978-03-08 1980-03-18 Tosco Corporation Seal assembly and method for providing a seal in a rotary kiln
US4668484A (en) * 1984-02-13 1987-05-26 Elliott David J Transport containers for semiconductor wafers
US4839145A (en) 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
GB2199022B (en) * 1986-11-20 1991-01-02 Shimizu Construction Co Ltd Dust tight storage cabinet apparatus for use in clean rooms
DE3707672A1 (de) 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US4858558A (en) 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
US5119540A (en) 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
DE69004908T2 (de) 1989-09-20 1994-03-24 Sumitomo Electric Industries Vorrichtung zur Synthese von Diamanten.
US4967645A (en) * 1989-11-27 1990-11-06 Micron Technology, Inc. Air shower with directed air flow
KR920003424A (ko) 1990-07-13 1992-02-29 미다 가쓰시게 표면처리 장치, 표면처리방법 및 반도체장치의 제조방법
US20020004309A1 (en) 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US5269847A (en) 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
US5351415A (en) * 1992-05-18 1994-10-04 Convey, Inc. Method and apparatus for maintaining clean articles
TW276353B (es) * 1993-07-15 1996-05-21 Hitachi Seisakusyo Kk
JPH07230942A (ja) * 1994-02-18 1995-08-29 Hitachi Ltd マルチチャンバシステム及びその制御方法
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5700422A (en) 1995-04-14 1997-12-23 Ryobi Ltd. Molten metal supply device
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5993555A (en) 1997-01-16 1999-11-30 Seh America, Inc. Apparatus and process for growing silicon epitaxial layer
US5994675A (en) 1997-03-07 1999-11-30 Semitool, Inc. Semiconductor processing furnace heating control system
DE19882805T1 (de) 1997-11-14 2001-01-04 Super Silicon Crystal Res Inst Epitaxiwachstumsofen
US6214116B1 (en) 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
US6120605A (en) 1998-02-05 2000-09-19 Asm Japan K.K. Semiconductor processing system
US6122566A (en) * 1998-03-03 2000-09-19 Applied Materials Inc. Method and apparatus for sequencing wafers in a multiple chamber, semiconductor wafer processing system
JP3314711B2 (ja) 1998-04-03 2002-08-12 株式会社富士電機総合研究所 薄膜製造装置
JP2000068356A (ja) * 1998-08-21 2000-03-03 Ribaaberu:Kk 半導体装置の製造方法および製造装置
JP2000286200A (ja) 1999-03-31 2000-10-13 Kokusai Electric Co Ltd 熱処理方法および熱処理装置
JP2001060578A (ja) 1999-08-20 2001-03-06 Nec Corp 真空処理装置
US6193804B1 (en) 1999-10-02 2001-02-27 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for sealing a vacuum chamber
EP1255294A4 (en) * 2000-01-17 2009-01-21 Ebara Corp SEMI-SLIDE TRANSPORT CONTROL APPARATUS AND METHOD OF TRANSPORTING SEMICONDUCTED DISCS
JP2001284218A (ja) * 2000-03-30 2001-10-12 Canon Inc 保管庫、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
US6399510B1 (en) 2000-09-12 2002-06-04 Applied Materials, Inc. Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
JP3939101B2 (ja) * 2000-12-04 2007-07-04 株式会社荏原製作所 基板搬送方法および基板搬送容器
US20020102859A1 (en) 2001-01-31 2002-08-01 Yoo Woo Sik Method for ultra thin film formation
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US7108748B2 (en) 2001-05-30 2006-09-19 Asm America, Inc. Low temperature load and bake
US6558750B2 (en) 2001-07-16 2003-05-06 Technic Inc. Method of processing and plating planar articles
JP3697478B2 (ja) * 2001-08-20 2005-09-21 ソニー株式会社 基板の移送方法及びロードポート装置並びに基板移送システム
JP3886424B2 (ja) 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
CN1996552B (zh) * 2001-08-31 2012-09-05 克罗辛自动化公司 晶片机
US6637998B2 (en) * 2001-10-01 2003-10-28 Air Products And Chemicals, Inc. Self evacuating micro environment system
US7390366B2 (en) 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
US7988398B2 (en) * 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
JP2006080098A (ja) 2002-09-20 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6679672B1 (en) * 2003-03-10 2004-01-20 Syracuse University Transfer port for movement of materials between clean rooms
KR101416781B1 (ko) 2003-03-14 2014-07-08 아익스트론 인코포레이티드 원자 층 증착을 위한 방법 및 장치
JP2004296855A (ja) * 2003-03-27 2004-10-21 Dainippon Screen Mfg Co Ltd 薄膜形成方法および薄膜形成装置
KR20050003763A (ko) * 2003-07-04 2005-01-12 삼성전자주식회사 웨이퍼용 카세트 수용 용기
US20070269297A1 (en) * 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US7458763B2 (en) * 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
JP2007520820A (ja) * 2004-02-03 2007-07-26 エクセラーエックス， エルエルシー 製造のためのシステムおよび方法
CN100437268C (zh) 2004-07-09 2008-11-26 鸿富锦精密工业（深圳）有限公司 导光板模具及其制备方法
US20060292846A1 (en) * 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
US7371022B2 (en) * 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
TWI304241B (en) 2005-02-04 2008-12-11 Advanced Display Proc Eng Co Vacuum processing apparatus
US7410340B2 (en) * 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
KR100688837B1 (ko) 2005-05-12 2007-03-02 삼성에스디아이 주식회사 결정질 실리콘 증착을 위한 화학기상증착장치
US20070051314A1 (en) * 2005-09-08 2007-03-08 Jusung Engineering Co., Ltd. Movable transfer chamber and substrate-treating apparatus including the same
JP5463536B2 (ja) 2006-07-20 2014-04-09 北陸成型工業株式会社 シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP4840186B2 (ja) * 2007-02-19 2011-12-21 セイコーエプソン株式会社 チャンバ装置
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US9105673B2 (en) * 2007-05-09 2015-08-11 Brooks Automation, Inc. Side opening unified pod
KR101359401B1 (ko) * 2007-06-21 2014-02-10 주성엔지니어링(주) 고효율 박막 태양전지와 그 제조방법 및 제조장치
FR2920046A1 (fr) * 2007-08-13 2009-02-20 Alcatel Lucent Sas Procede de post-traitement d'un support de transport pour le convoyage et le stockage atmospherique de substrats semi-conducteurs, et station de post-traitement pour la mise en oeuvre d'un tel procede
JP2010538476A (ja) * 2007-08-31 2010-12-09 アプライド マテリアルズ インコーポレイテッド 光電池製造ライン
US20100047954A1 (en) * 2007-08-31 2010-02-25 Su Tzay-Fa Jeff Photovoltaic production line
US20090067957A1 (en) * 2007-09-06 2009-03-12 Mitsuhiro Ando Transport system with buffering
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
JP2009135338A (ja) 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 太陽電池及び太陽電池の製造方法
US20100009489A1 (en) * 2008-07-08 2010-01-14 Chan Albert Tu Method and system for producing a solar cell using atmospheric pressure plasma chemical vapor deposition
TW201025652A (en) * 2008-08-04 2010-07-01 Xunlight Corp Roll-to-roll continuous thin film PV manufacturing process and equipment with real time online IV measurement
US8110511B2 (en) * 2009-01-03 2012-02-07 Archers Inc. Methods and systems of transferring a substrate to minimize heat loss
US7897525B2 (en) * 2008-12-31 2011-03-01 Archers Inc. Methods and systems of transferring, docking and processing substrates
US20100162954A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Integrated facility and process chamber for substrate processing
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
US8367565B2 (en) * 2008-12-31 2013-02-05 Archers Inc. Methods and systems of transferring, docking and processing substrates
KR101543681B1 (ko) * 2009-01-15 2015-08-11 주성엔지니어링(주) 기판 처리 시스템
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8246284B2 (en) * 2009-03-05 2012-08-21 Applied Materials, Inc. Stacked load-lock apparatus and method for high throughput solar cell manufacturing
US8288645B2 (en) 2009-03-17 2012-10-16 Sharp Laboratories Of America, Inc. Single heterojunction back contact solar cell
US20100273279A1 (en) * 2009-04-27 2010-10-28 Applied Materials, Inc. Production line for the production of multiple sized photovoltaic devices
US20110033957A1 (en) * 2009-08-07 2011-02-10 Applied Materials, Inc. Integrated thin film metrology system used in a solar cell production line
US20110033638A1 (en) * 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
US8968473B2 (en) 2009-09-21 2015-03-03 Silevo, Inc. Stackable multi-port gas nozzles
US8828852B2 (en) * 2009-12-10 2014-09-09 California Institute Of Technology Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
JP2013082951A (ja) * 2010-02-18 2013-05-09 Kaneka Corp 薄膜製造装置及び薄膜製造方法、並びに薄膜製造装置のメンテナンス方法
US20110245957A1 (en) * 2010-04-06 2011-10-06 Applied Materials, Inc. Advanced platform for processing crystalline silicon solar cells
US8252619B2 (en) * 2010-04-23 2012-08-28 Primestar Solar, Inc. Treatment of thin film layers photovoltaic module manufacture
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US8686283B2 (en) * 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US20110285840A1 (en) * 2010-05-20 2011-11-24 Applied Materials, Inc. Solder bonding and inspection method and apparatus
US9054256B2 (en) * 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
CN103094413B (zh) * 2011-10-31 2016-03-23 三菱电机株式会社 太阳能电池的制造装置、太阳能电池及其制造方法
CN104040732A (zh) * 2012-01-03 2014-09-10 应用材料公司 钝化结晶硅太阳能电池的先进平台
JP2013222963A (ja) * 2012-04-17 2013-10-28 Tokyo Ohka Kogyo Co Ltd 搬送装置及び塗布装置
JP2014007309A (ja) * 2012-06-26 2014-01-16 Hitachi High-Technologies Corp 成膜装置
JP2013033967A (ja) * 2012-08-09 2013-02-14 Hitachi Kokusai Electric Inc 基板処理装置の異常検出方法、及び基板処理装置
WO2014038277A1 (ja) * 2012-09-06 2014-03-13 三菱電機株式会社 太陽電池の製造装置およびこれを用いた太陽電池の製造方法
US9991139B2 (en) * 2012-12-03 2018-06-05 Asm Ip Holding B.V. Modular vertical furnace processing system
US20140213016A1 (en) * 2013-01-30 2014-07-31 Applied Materials, Inc. In situ silicon surface pre-clean for high performance passivation of silicon solar cells
JP2014197592A (ja) * 2013-03-29 2014-10-16 大日本スクリーン製造株式会社 基板処理装置

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US9391230B1 (en) 2016-07-12
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WO2016131190A1 (en) 2016-08-25
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