AR095247A1 - Celdas de memoria magnética de acceso aleatorio con revestimientos aislantes - Google Patents

Celdas de memoria magnética de acceso aleatorio con revestimientos aislantes

Info

Publication number
AR095247A1
AR095247A1 ARP140100857A ARP140100857A AR095247A1 AR 095247 A1 AR095247 A1 AR 095247A1 AR P140100857 A ARP140100857 A AR P140100857A AR P140100857 A ARP140100857 A AR P140100857A AR 095247 A1 AR095247 A1 AR 095247A1
Authority
AR
Argentina
Prior art keywords
magnetic
random access
memory cells
magnetic memory
insulating coatings
Prior art date
Application number
ARP140100857A
Other languages
English (en)
Inventor
Pierre Nozieres Jean
Beery Dafna
Reid Jason
Shin Jong
Joubert Olivier
Original Assignee
Crocus Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Tech Inc filed Critical Crocus Tech Inc
Publication of AR095247A1 publication Critical patent/AR095247A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Un método de fabricación para conformar un dispositivo de memoria incluye la formación de una máscara rígida sobre un apilamiento magnético. Se realiza un primer grabado del apilamiento magnético para conformar capas magnéticas expuestas. Un revestimiento se aplica a las capas magnéticas expuestas para conformar capas magnéticas protegidas. Un segundo grabado del apilamiento magnético conforma una celda de memoria magnética de acceso aleatorio (MRAM) donde el revestimiento impide la derivación entre las capas magnéticas protegidas.
ARP140100857A 2013-03-11 2014-03-11 Celdas de memoria magnética de acceso aleatorio con revestimientos aislantes AR095247A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361776739P 2013-03-11 2013-03-11

Publications (1)

Publication Number Publication Date
AR095247A1 true AR095247A1 (es) 2015-09-30

Family

ID=51486810

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP140100857A AR095247A1 (es) 2013-03-11 2014-03-11 Celdas de memoria magnética de acceso aleatorio con revestimientos aislantes

Country Status (4)

Country Link
US (1) US9059400B2 (es)
EP (1) EP2973726A4 (es)
AR (1) AR095247A1 (es)
WO (1) WO2014164520A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564575B2 (en) * 2014-12-30 2017-02-07 Globalfoundries Singapore Pte. Ltd. Dual encapsulation integration scheme for fabricating integrated circuits with magnetic random access memory structures
US10256399B2 (en) 2016-05-18 2019-04-09 International Business Machines Corporation Fabricating a cap layer for a magnetic random access memory (MRAM) device
WO2019005082A1 (en) * 2017-06-29 2019-01-03 Intel Corporation JUNCTION DEVICES WITH MAGNETIC TUNNEL EFFECT WITH SIDE WALL DEGREASER
CN110098321B (zh) * 2018-01-30 2023-07-04 上海磁宇信息科技有限公司 一种制备磁性随机存储器导电硬掩模的方法
US11665974B2 (en) * 2021-01-27 2023-05-30 International Business Machines Corporation MRAM containing magnetic top contact

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413788B1 (en) * 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
US6815248B2 (en) 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6783999B1 (en) * 2003-06-20 2004-08-31 Infineon Technologies Ag Subtractive stud formation for MRAM manufacturing
US6984529B2 (en) * 2003-09-10 2006-01-10 Infineon Technologies Ag Fabrication process for a magnetic tunnel junction device
US7112454B2 (en) 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US7033881B2 (en) 2004-06-15 2006-04-25 International Business Machines Corporation Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
US7321130B2 (en) * 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7842558B2 (en) * 2006-03-02 2010-11-30 Micron Technology, Inc. Masking process for simultaneously patterning separate regions
US7663198B2 (en) * 2006-08-29 2010-02-16 Qimonda Ag Magnetoresistive random access memory device with alternating liner magnetization orientation
US8208288B2 (en) 2008-03-27 2012-06-26 International Business Machines Corporation Hybrid superconducting-magnetic memory cell and array
US8553449B2 (en) 2009-01-09 2013-10-08 Micron Technology, Inc. STT-MRAM cell structures
US8981502B2 (en) * 2010-03-29 2015-03-17 Qualcomm Incorporated Fabricating a magnetic tunnel junction storage element
US8962493B2 (en) * 2010-12-13 2015-02-24 Crocus Technology Inc. Magnetic random access memory cells having improved size and shape characteristics

Also Published As

Publication number Publication date
EP2973726A4 (en) 2016-11-30
WO2014164520A1 (en) 2014-10-09
US20140252516A1 (en) 2014-09-11
US9059400B2 (en) 2015-06-16
EP2973726A1 (en) 2016-01-20

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