DE19882805T1 - Epitaxiwachstumsofen - Google Patents

Epitaxiwachstumsofen

Info

Publication number
DE19882805T1
DE19882805T1 DE19882805T DE19882805T DE19882805T1 DE 19882805 T1 DE19882805 T1 DE 19882805T1 DE 19882805 T DE19882805 T DE 19882805T DE 19882805 T DE19882805 T DE 19882805T DE 19882805 T1 DE19882805 T1 DE 19882805T1
Authority
DE
Germany
Prior art keywords
epitaxial growth
growth oven
oven
epitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19882805T
Other languages
English (en)
Inventor
Masato Imai
Masanori Mayusumi
Shinji Nakahara
Kazutoshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32969097A external-priority patent/JP3418950B2/ja
Priority claimed from JP32968997A external-priority patent/JPH11147787A/ja
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Publication of DE19882805T1 publication Critical patent/DE19882805T1/de
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
DE19882805T 1997-11-14 1998-11-13 Epitaxiwachstumsofen Ceased DE19882805T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32969097A JP3418950B2 (ja) 1997-11-14 1997-11-14 エピタキシャル成長炉
JP32968997A JPH11147787A (ja) 1997-11-14 1997-11-14 エピタキシャル成長炉
PCT/JP1998/005128 WO1999025909A1 (fr) 1997-11-14 1998-11-13 Four pour croissance epitaxiale

Publications (1)

Publication Number Publication Date
DE19882805T1 true DE19882805T1 (de) 2001-01-04

Family

ID=26573292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882805T Ceased DE19882805T1 (de) 1997-11-14 1998-11-13 Epitaxiwachstumsofen

Country Status (3)

Country Link
US (1) US6262393B1 (de)
DE (1) DE19882805T1 (de)
WO (1) WO1999025909A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3298001B2 (ja) * 1998-07-27 2002-07-02 株式会社スーパーシリコン研究所 エピタキシャル成長炉
US8845809B2 (en) * 2008-10-09 2014-09-30 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US8652259B2 (en) * 2008-10-09 2014-02-18 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US8298629B2 (en) 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
US8673081B2 (en) * 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8968473B2 (en) * 2009-09-21 2015-03-03 Silevo, Inc. Stackable multi-port gas nozzles
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US8562745B2 (en) * 2010-05-21 2013-10-22 Silevo, Inc. Stable wafer-carrier system
US9255346B2 (en) 2011-05-27 2016-02-09 Crystal Solar, Incorporated Silicon wafers by epitaxial deposition
US10100402B2 (en) 2011-10-07 2018-10-16 International Business Machines Corporation Substrate holder for graphene film synthesis
US20140060434A1 (en) * 2012-09-04 2014-03-06 Applied Materials, Inc. Gas injector for high volume, low cost system for epitaxial silicon depositon
CN104704624B (zh) * 2012-10-09 2017-06-09 应用材料公司 具索引的串联基板处理工具
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
WO2015192105A1 (en) * 2014-06-12 2015-12-17 Crystal Solar, Inc. Cvd epitaxial reactor chamber with resistive heating, three channel substrate carrier and gas preheat structure
WO2016131190A1 (en) 2015-02-17 2016-08-25 Solarcity Corporation Method and system for improving solar cell manufacturing yield
WO2016164569A1 (en) * 2015-04-07 2016-10-13 Applied Materials, Inc. Process gas preheating systems and methods for double-sided multi-substrate batch processing
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
CN113048788A (zh) * 2021-03-12 2021-06-29 上海瑟赫新材料科技有限公司 一种由碳碳复合材料制成的超高温炉

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118470B2 (ja) 1989-02-03 1995-12-18 アプライド マテリアルズ インコーポレーテッド エピタキシャル蒸着に用いる装置及び方法
JP3429101B2 (ja) 1995-02-28 2003-07-22 信越半導体株式会社 バレル型気相成長装置

Also Published As

Publication number Publication date
WO1999025909A1 (fr) 1999-05-27
US6262393B1 (en) 2001-07-17

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: C30B 2508

8131 Rejection