KR970706608A - 고정값 저장 셀 장치 및 그것의 제조 방법(fixed value storage cell arrangement and method of producing the same) - Google Patents

고정값 저장 셀 장치 및 그것의 제조 방법(fixed value storage cell arrangement and method of producing the same)

Info

Publication number
KR970706608A
KR970706608A KR1019970701934A KR19970701934A KR970706608A KR 970706608 A KR970706608 A KR 970706608A KR 1019970701934 A KR1019970701934 A KR 1019970701934A KR 19970701934 A KR19970701934 A KR 19970701934A KR 970706608 A KR970706608 A KR 970706608A
Authority
KR
South Korea
Prior art keywords
trench
mos transistor
doped
substrate
insulating layer
Prior art date
Application number
KR1019970701934A
Other languages
English (en)
Korean (ko)
Inventor
볼프강 크라우취나이더
로타르 리쉬
프란츠 호프만
볼프강 뢰스너
Original Assignee
로더리히 네테부쉬; 롤프 옴케
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로더리히 네테부쉬; 롤프 옴케, 지멘스 악티엔게젤샤프트 filed Critical 로더리히 네테부쉬; 롤프 옴케
Publication of KR970706608A publication Critical patent/KR970706608A/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Semiconductor Memories (AREA)
KR1019970701934A 1994-09-28 1995-09-14 고정값 저장 셀 장치 및 그것의 제조 방법(fixed value storage cell arrangement and method of producing the same) KR970706608A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4434725A DE4434725C1 (de) 1994-09-28 1994-09-28 Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung
DEP4434725.1 1994-09-28
PCT/DE1995/001262 WO1996010266A1 (de) 1994-09-28 1995-09-14 Festwert-speicherzellenanordnung und verfahren zu deren herstellung

Publications (1)

Publication Number Publication Date
KR970706608A true KR970706608A (ko) 1997-11-03

Family

ID=6529456

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970701934A KR970706608A (ko) 1994-09-28 1995-09-14 고정값 저장 셀 장치 및 그것의 제조 방법(fixed value storage cell arrangement and method of producing the same)

Country Status (7)

Country Link
US (1) US5973373A (de)
EP (1) EP0784866B1 (de)
JP (1) JP3781125B2 (de)
KR (1) KR970706608A (de)
CN (1) CN1159865A (de)
DE (2) DE4434725C1 (de)
WO (1) WO1996010266A1 (de)

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US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6636440B2 (en) 2001-04-25 2003-10-21 Saifun Semiconductors Ltd. Method for operation of an EEPROM array, including refresh thereof
US6686604B2 (en) * 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US7098107B2 (en) 2001-11-19 2006-08-29 Saifun Semiconductor Ltd. Protective layer in memory device and method therefor
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US8664050B2 (en) * 2012-03-20 2014-03-04 International Business Machines Corporation Structure and method to improve ETSOI MOSFETS with back gate
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JPS63102372A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd Ｅｅｐｒｏｍの製造方法
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JPH03190165A (ja) * 1989-12-20 1991-08-20 Sony Corp 読み出し専用メモリ装置及びその製造方法
JPH04226071A (ja) * 1990-05-16 1992-08-14 Ricoh Co Ltd 半導体メモリ装置
JPH0462966A (ja) * 1990-07-02 1992-02-27 Fujitsu Ltd Ｍｏｓｆｅｔマスクｒｏｍ
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JPH04354159A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
DE59501936D1 (de) 1998-05-20
EP0784866A1 (de) 1997-07-23
JPH10506237A (ja) 1998-06-16
WO1996010266A1 (de) 1996-04-04
US5973373A (en) 1999-10-26
EP0784866B1 (de) 1998-04-15
CN1159865A (zh) 1997-09-17
DE4434725C1 (de) 1996-05-30
JP3781125B2 (ja) 2006-05-31

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