KR970703614A - 정전척 - Google Patents
정전척 Download PDFInfo
- Publication number
- KR970703614A KR970703614A KR1019960706716A KR19960706716A KR970703614A KR 970703614 A KR970703614 A KR 970703614A KR 1019960706716 A KR1019960706716 A KR 1019960706716A KR 19960706716 A KR19960706716 A KR 19960706716A KR 970703614 A KR970703614 A KR 970703614A
- Authority
- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- members
- ceramic
- dielectric layer
- metal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4046—Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10295—Metallic connector elements partly mounted in a hole of the PCB
- H05K2201/10303—Pin-in-hole mounted pins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3447—Lead-in-hole components
Abstract
본 발명은 정전척과 이러한 척을 구성하는 방법에 관한 것이다. 이 척은 활성브레이징합금의 층으로 직접 결합되는 세라믹물질을 포함한다. 활성합금은 정전척의 전도성 층과, 척의 베이스에 유전제층을 결합시키기 위한 수단으로서 작용한다. 전극에 대한 전기관통단자가 활성전극을 이용하여 형성된다.
Description
정전척
[도면의 간단한 설명]
제4도는 제3도의 정전척의 제1변형형태를 보인 단면도.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (18)
- 제1 및 제2부재와, 제1 및 제2부재의 적어도 일부분사이에 개재되어 이들과 화학적으로 접착되는 금속으로 구성된 전극으로 구성됨을 특징으로 하는 정전척.
- 청구범위 1항에 있어서, 제2부재를 통하여 연장되어 전극을 전원에 전기적으로 연결하기 위한 수단이 구성되어 있음을 특징으로 하는 정전척.
- 청구범위 1 또는 2항에 있어서, 금속에 의하여 결합되지 아니하는 제1 및 제2비금속부재의 부분사이에 개재된 비전도성물질이 구성되어 있음을 특징으로 하는 정전척.
- 전기 청구범위 어느 한 항에 있어서, 제1 및 제2부재가 세라믹이고 금속이 제1 및 제2부재를 브레이징토록 사용된 활성합금으로 구성됨을 특징으로 하는 정전척.
- 청구범위 2항에 종속하는 청구범위 4항에 있어서, 전기적인 연결수단이 제2부재에 형성된 개방부와 이 개방부를 통하여 연장되고 이에 결합된 활성합금으로 구성됨을 특징으로 하는 정전척.
- 청구범위 3항에 있어서, 비전도성 물질이 에폭시와 알루미나충만형 유기금속현탁액으로 구성된 그룹으로부터 선택됨을 특징으로 하는 정전척.
- 전기 청구범위의 어느 한 항에 있어서, 베이스부분, 유전체층과, 이들 베이스부분 및 유전체층 사이에 개재되어 전압전원에 연결가능만 하나 이상의 전극으로 구성되고. 베이스부분과 유전체층이 세라믹으로 구성되며, 하나 이상의 전극이 유전체층을 베이스부분에 결합시키는 활성브레이징합금으로 구성됨을 특징으로 하는 정전척.
- 청구범위 7항에 있어서, 유전체층의 두께가 0.020인치 이하임을 특징으로 하는 정전척.
- 청구범위 8항에 있어서, 유전체층의 두께가 0.004-0.010인치의 범위임을 특징으로 하는 정전척.
- 청구범위 7-9항의 어느 한 항에 있어서, 600°C의 온도에서 사용가능함을 특징으로 하는 정전척.
- 청구범위 4항에 종속하는 청구범위 5-10항의 어느 한 항에 있어서, 활성 합금의 열팽창계수가 제1부재의 열팽창계수보다 큼을 특징으로 하는 정전척.
- 전기 청구범위의 어느 항 항에 있어서, 제1 및 제2부재의 적어도 하나가 알루미나로 구성됨을 특징으로 하는 정전척.
- 청구범위 4항에 종속하는 청구범위 5-12항의 어느 한 항에 있어서, 활성합금이 비귀금속으로 구성됨을 특징으로 하는 정전척.
- 청구범위 3항에 있어서, 제1세라믹부재에 비전도성 금속이 주입되는 포트가 형성되어 있음을 특징으로 하는 정전척.
- 전기 청구범위의 어느 한 항에 있어서, 제1 및 제2세라믹 부재의 적어도 하나가 질화규소, 질화알루미늄, 티탄산 바륨 티탄산칼슘 및 사파이어로 구성되는 그룹으로부터 선택된 물질로 구성됨을 특징으로 하는 정전척.
- 처리된 반도체 웨이퍼를 고정하는 방법에 있어서, 이 방법이 전기 청구범위의 어느 한 항에 청구된 정전척을 이용하는 단계로 구성됨을 특징으로 하는 반도체 웨이퍼 고정 방법.
- 정전척의 구성방법에 있어서, 이 방법이 제1 및 제2세라믹부재의 적어도 일부분을 금속으로 화학 결합시키는 단계와 이후에 제l세라믹부재의 두께를 감소시키는 단계로 구성됨을 특징으로 하는 방법.
- 청구범위 17항에 있어서, 제1 및 제2세라믹부재의 결합단계가 제1 및 제2세라믹부재의 적어도 일부분을 활성합금으로 결합시키는 단계로 구성됨을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/258,232 | 1994-06-10 | ||
US06/258,232 US5600530A (en) | 1992-08-04 | 1994-06-10 | Electrostatic chuck |
PCT/GB1995/001257 WO1995034911A1 (en) | 1994-06-10 | 1995-06-01 | Electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970703614A true KR970703614A (ko) | 1997-07-03 |
Family
ID=22979660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960706716A KR970703614A (ko) | 1994-06-10 | 1995-06-01 | 정전척 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5600530A (ko) |
EP (1) | EP0764342A1 (ko) |
JP (1) | JPH10501925A (ko) |
KR (1) | KR970703614A (ko) |
WO (1) | WO1995034911A1 (ko) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3866320B2 (ja) * | 1995-02-09 | 2007-01-10 | 日本碍子株式会社 | 接合体、および接合体の製造方法 |
JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
US5854899A (en) * | 1996-05-09 | 1998-12-29 | Bay Networks, Inc. | Method and apparatus for managing virtual circuits and routing packets in a network/subnetwork environment |
US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
JP4236292B2 (ja) * | 1997-03-06 | 2009-03-11 | 日本碍子株式会社 | ウエハー吸着装置およびその製造方法 |
US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
EP0948042A1 (de) * | 1998-03-06 | 1999-10-06 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung | Elektrostatische Vorrichtung zum Halten von Wafern und anderen Bauteilen |
US6641939B1 (en) | 1998-07-01 | 2003-11-04 | The Morgan Crucible Company Plc | Transition metal oxide doped alumina and methods of making and using |
DE19853092B4 (de) | 1998-11-18 | 2004-10-21 | Leica Microsystems Lithography Gmbh | Übernahme- und Haltesystem für ein Substrat |
DE19853588B4 (de) | 1998-11-20 | 2005-04-21 | Leica Microsystems Lithography Gmbh | Halteeinrichtung für ein Substrat |
US6115232A (en) * | 1998-12-03 | 2000-09-05 | Lsi Logic Corporation | Method for forming an ion implanted electrostatic chuck |
TW492075B (en) * | 1999-04-06 | 2002-06-21 | Tokyo Electron Ltd | Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
US6462928B1 (en) | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
US6268994B1 (en) * | 1999-07-09 | 2001-07-31 | Dorsey Gage, Inc. | Electrostatic chuck and method of manufacture |
US6490144B1 (en) | 1999-11-29 | 2002-12-03 | Applied Materials, Inc. | Support for supporting a substrate in a process chamber |
US6693789B2 (en) * | 2000-04-05 | 2004-02-17 | Sumitomo Osaka Cement Co., Ltd. | Susceptor and manufacturing method thereof |
KR100427459B1 (ko) * | 2001-09-05 | 2004-04-30 | 주성엔지니어링(주) | 아크 방지용 정전척 |
US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
US6986865B2 (en) * | 2002-07-10 | 2006-01-17 | Watlow Electric Manufacturing Company | Method for manufacturing an electrostatic chuck |
US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
US7327439B2 (en) * | 2004-11-16 | 2008-02-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4762064B2 (ja) * | 2005-07-04 | 2011-08-31 | 京セラ株式会社 | 接合体とこれを用いたウェハ支持部材及びウェハ処理方法 |
JP2007042910A (ja) * | 2005-08-04 | 2007-02-15 | Sumitomo Electric Ind Ltd | ウェハプローバ用チャックトップおよびそれを搭載したウェハプローバ |
US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US9275887B2 (en) * | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US7589950B2 (en) * | 2006-10-13 | 2009-09-15 | Applied Materials, Inc. | Detachable electrostatic chuck having sealing assembly |
US9543181B2 (en) * | 2008-07-30 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Replaceable electrostatic chuck sidewall shield |
US10297550B2 (en) | 2010-02-05 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D IC architecture with interposer and interconnect structure for bonding dies |
EP2643851A1 (en) | 2010-11-22 | 2013-10-02 | Fischer, Andreas | A method and an apparatus for forming electrically conductive vias in a substrate, an automated robot-based manufacturing system, a component comprising a substrate with via holes, and an interposer device |
US9556074B2 (en) * | 2011-11-30 | 2017-01-31 | Component Re-Engineering Company, Inc. | Method for manufacture of a multi-layer plate device |
US10105795B2 (en) | 2012-05-25 | 2018-10-23 | General Electric Company | Braze compositions, and related devices |
DE102012106236A1 (de) * | 2012-07-11 | 2014-01-16 | Endress + Hauser Gmbh + Co. Kg | Verfahren zum Fügen von Keramikkörpern mittels eines Aktivhartlots, Baugruppe mit mindestens zwei miteinander gefügten Keramikkörpern, insbesondere Druckmesszelle |
JP7240174B2 (ja) * | 2015-11-02 | 2023-03-15 | ワトロー エレクトリック マニュファクチャリング カンパニー | 高温半導体処理におけるクランピングのための静電チャック及びそれを製造する方法 |
CN108883536A (zh) * | 2016-03-08 | 2018-11-23 | 纳腾股份有限公司 | 传送垫以及使用该传送垫的传送装置和传送方法 |
EP3673506B1 (en) * | 2017-08-25 | 2023-11-15 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
US11923227B2 (en) | 2018-04-27 | 2024-03-05 | Kyocera Corporation | Electrostatic chuck and method for manufacturing same |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2121590A (en) * | 1936-04-09 | 1938-06-21 | Siemens Ag | Vacuum-and gas-tight vessel for electric apparatus |
US2897424A (en) * | 1953-11-10 | 1959-07-28 | Robert W Waring | Electrostatic apparatus |
DE1098727B (de) * | 1959-10-22 | 1961-02-02 | Siemens Ag | Elektrodendurchfuehrung fuer die induktive Durchflussmessung |
US3150678A (en) * | 1960-07-11 | 1964-09-29 | Warner Electric Brake & Clutch | Device utilizing electro-viscous liquid |
US3197682A (en) * | 1961-04-13 | 1965-07-27 | Pure Oil Co | Safet electro-responsive-fluid chuck |
US3253200A (en) * | 1961-08-30 | 1966-05-24 | Union Oil Co | Electro-viscous fluid chuck |
US3401628A (en) * | 1964-07-02 | 1968-09-17 | American Can Co | Method of electrostatically coating recessed surfaces |
US3436109A (en) * | 1965-12-15 | 1969-04-01 | Corning Glass Works | Stressed hermetic seal and method of making said seal |
US3517437A (en) * | 1967-06-19 | 1970-06-30 | Beckman Instruments Inc | Method of forming a terminal structure in a refractory base |
GB1156875A (en) | 1967-07-07 | 1969-07-02 | Mawdsley S Ltd | Improvements in or relating to Electromagnetic Flowmeters. |
US3662455A (en) * | 1970-12-10 | 1972-05-16 | Sanders Associates Inc | Method for preparing an anti-oxidizing, active alloy brazing composition |
US3746896A (en) * | 1972-06-12 | 1973-07-17 | Sybron Corp | Electromagnetic flow transducers having laminar electrodes |
GB1424875A (en) | 1972-06-19 | 1976-02-11 | Sybron Corp | Electromagnetic flow transducers |
FR2217290B1 (ko) * | 1972-12-01 | 1975-03-28 | Quartex Sa | |
GB1443215A (en) * | 1973-11-07 | 1976-07-21 | Mullard Ltd | Electrostatically clamping a semiconductor wafer during device manufacture |
US3858097A (en) * | 1973-12-26 | 1974-12-31 | Bendix Corp | Pressure-sensing capacitor |
US3916270A (en) * | 1974-05-02 | 1975-10-28 | Tektronix Inc | Electrostatic holddown apparatus |
US3929426A (en) * | 1974-05-08 | 1975-12-30 | Rca Corp | Method of anchoring metallic coated leads to ceramic bodies and lead-ceramic bodies formed thereby |
US3983401A (en) * | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
JPS5315060A (en) * | 1976-07-28 | 1978-02-10 | Hitachi Ltd | Inching device |
US4111572A (en) * | 1977-03-10 | 1978-09-05 | General Electric Company | Ceramic-metal assembly |
JPS588449B2 (ja) * | 1977-04-08 | 1983-02-16 | 株式会社東芝 | 電磁流量計 |
US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
EP0005811A1 (de) * | 1978-05-30 | 1979-12-12 | Dieter Frey | Kraftfahrzeug-Dachträger für die Befestigung von Skiern und anderem Transportgut |
DD143131A1 (de) * | 1979-04-26 | 1980-07-30 | Ute Bergner | Vorrichtung zum elektrostatischen halten von werkstuecken,insbesondere halbleiterscheiben |
DE2950039C2 (de) * | 1979-12-13 | 1982-11-25 | Krohne Meßtechnik GmbH & Co KG, 4100 Duisburg | Elektroden für elektromagnetische Durchflußmesser |
GB2068122A (en) | 1980-01-24 | 1981-08-05 | Atomic Energy Authority Uk | Electromagnetic flowmeters |
JPS5754341A (ja) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Usuitahojisochi |
US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
JPS5773934A (en) * | 1980-10-27 | 1982-05-08 | Toshiba Corp | Sample holder for electron beam exposure |
US4345299A (en) * | 1980-11-03 | 1982-08-17 | Motorola, Inc. | Capacitive pressure transducer assembly with improved output lead design |
US4371588A (en) * | 1980-12-08 | 1983-02-01 | Kyle James C | Electrical insulating material with hermetic seal |
JPS57187947A (en) * | 1981-05-13 | 1982-11-18 | Toshiba Corp | Electrostatic chuck |
JPS5824143A (ja) * | 1981-08-06 | 1983-02-14 | Fujitsu Ltd | フオトマスク |
GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
JPS5848421A (ja) * | 1981-09-17 | 1983-03-22 | Toshiba Corp | ドライエツチング装置 |
JPS5848434A (ja) * | 1981-09-17 | 1983-03-22 | Toshiba Corp | 静電チヤツク装置 |
ATE15270T1 (de) * | 1981-11-27 | 1985-09-15 | Rheometron Ag | Messwertaufnehmer fuer magnetisch-induktive durchflussmessgeraete. |
JPS58102537A (ja) * | 1981-12-14 | 1983-06-18 | Hitachi Ltd | 静電吸着式チヤツキング装置 |
US4412133A (en) * | 1982-01-05 | 1983-10-25 | The Perkin-Elmer Corp. | Electrostatic cassette |
JPS58123381A (ja) * | 1982-01-13 | 1983-07-22 | Toshiba Corp | 静電チヤツクとその製造方法 |
JPS6059104B2 (ja) * | 1982-02-03 | 1985-12-23 | 株式会社東芝 | 静電チヤツク板 |
JPS58190037A (ja) * | 1982-04-28 | 1983-11-05 | Toshiba Corp | 静電チヤツク装置およびその製造方法 |
US4623513A (en) * | 1982-07-01 | 1986-11-18 | Gte Products Corporation | Ductile low temperature brazing alloy |
JPS5929435A (ja) * | 1982-08-11 | 1984-02-16 | Hitachi Ltd | 試料支持装置 |
JPS59125032A (ja) * | 1982-12-29 | 1984-07-19 | Fuji Electric Co Ltd | 差圧測定装置 |
EP0113928B1 (de) * | 1983-01-18 | 1986-04-09 | Rheometron Ag | Messwertaufnehmer für magnetisch-induktive Durchflussmessgeräte |
US4551192A (en) * | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
GB2147459A (en) | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
GB2154365A (en) * | 1984-02-10 | 1985-09-04 | Philips Electronic Associated | Loading semiconductor wafers on an electrostatic chuck |
EP0138254B1 (en) * | 1983-09-30 | 1988-06-01 | Philips Electronics Uk Limited | Electrostatic chuck and loading method |
US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
JPS6099538A (ja) | 1983-11-01 | 1985-06-03 | 横河・ヒュ−レット・パッカ−ド株式会社 | ピンチヤツク |
DE3344679A1 (de) * | 1983-12-10 | 1985-06-20 | Rheometron AG, Basel | Verfahren zum einsintern stiftfoermiger elektroden oder elektrodenschaefte aus metallischem werkstoff in ein keramisches messrohr fuer magnetisch-induktive durchflussmessgeraete |
US4591535A (en) * | 1984-06-20 | 1986-05-27 | Gte Products Corporation | Method of brazing ceramics using active brazing alloys |
JPS6131636U (ja) * | 1984-07-31 | 1986-02-26 | 株式会社 徳田製作所 | 静電チヤツク |
JPS61192435A (ja) * | 1985-02-21 | 1986-08-27 | Canon Inc | 静電吸着保持装置 |
JPS61164234U (ko) * | 1985-04-01 | 1986-10-11 | ||
US4733632A (en) * | 1985-09-25 | 1988-03-29 | Tokyo Electron Limited | Wafer feeding apparatus |
US4735866A (en) * | 1985-12-30 | 1988-04-05 | The United States Of America As Represented By The United States Department Of Energy | Copper-silver-titanium-tin filler metal for direct brazing of structural ceramics |
JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
US4724510A (en) * | 1986-12-12 | 1988-02-09 | Tegal Corporation | Electrostatic wafer clamp |
JP2573225B2 (ja) * | 1987-02-10 | 1997-01-22 | 株式会社東芝 | 電子部品の製造方法 |
JPS63257481A (ja) * | 1987-04-14 | 1988-10-25 | Abisare:Kk | 静電保持装置 |
US4864461A (en) * | 1987-04-14 | 1989-09-05 | Kabushiki Kaisha Abisare | Machine unit having retaining device using static electricity |
WO1988009054A1 (en) * | 1987-05-06 | 1988-11-17 | Labtam Limited | Electrostatic chuck using ac field excitation |
US4912838A (en) * | 1987-12-25 | 1990-04-03 | Yamatake-Honeywell Co., Ltd. | Method of manufacturing electrode for electromagnetic flowmeter |
EP0339903B1 (en) * | 1988-04-26 | 1993-10-06 | Toto Ltd. | Method of making dielectric ceramics for electrostatic chucks |
DE3901492A1 (de) * | 1988-07-22 | 1990-01-25 | Endress Hauser Gmbh Co | Drucksensor und verfahren zu seiner herstellung |
JP2665242B2 (ja) * | 1988-09-19 | 1997-10-22 | 東陶機器株式会社 | 静電チャック |
US4883745A (en) * | 1988-11-07 | 1989-11-28 | Gte Products Corporation | Silver-copper-titanium brazing alloy containing crust inhibiting element |
DE3909186A1 (de) * | 1989-03-21 | 1990-09-27 | Endress Hauser Gmbh Co | Elektrisch leitende durchfuehrung und verfahren zu ihrer herstellung |
US4962441A (en) * | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
EP0498852B1 (de) * | 1989-11-03 | 1995-01-04 | Iro Ab | Verfahren zum verhindern von drehschwingungen in einer fadenspeicher- und -liefervorrichtung und fadenspeicher- und -liefervorrichtung |
US5241216A (en) * | 1989-12-21 | 1993-08-31 | General Electric Company | Ceramic-to-conducting-lead hermetic seal |
DE4009366A1 (de) * | 1990-03-23 | 1991-09-26 | Heraeus Gmbh W C | Verfahren zur herstellung eines metallischen verbunddrahtes |
US5073716A (en) * | 1990-05-10 | 1991-12-17 | At&T Bell Laboratories | Apparatus comprising an electrostatic wafer cassette |
US5095759A (en) * | 1990-06-01 | 1992-03-17 | Gte Products Corporation | Platinum electrode bonded to ceramic |
US5055964A (en) * | 1990-09-07 | 1991-10-08 | International Business Machines Corporation | Electrostatic chuck having tapered electrodes |
DE4129414A1 (de) * | 1990-11-13 | 1993-03-11 | Endress Hauser Gmbh Co | Verwendung eines speziellen tiegels beim melt-spinning einer aktivlot-legierung |
JP3238925B2 (ja) * | 1990-11-17 | 2001-12-17 | 株式会社東芝 | 静電チャック |
EP0493089B1 (en) * | 1990-12-25 | 1998-09-16 | Ngk Insulators, Ltd. | Wafer heating apparatus and method for producing the same |
US5166856A (en) * | 1991-01-31 | 1992-11-24 | International Business Machines Corporation | Electrostatic chuck with diamond coating |
US5155652A (en) * | 1991-05-02 | 1992-10-13 | International Business Machines Corporation | Temperature cycling ceramic electrostatic chuck |
EP0541400B1 (en) * | 1991-11-07 | 1998-03-18 | Varian Associates, Inc. | Anti-stick electrostatic chuck for a low pressure environment |
US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
JP2938679B2 (ja) * | 1992-06-26 | 1999-08-23 | 信越化学工業株式会社 | セラミックス製静電チャック |
US5368220A (en) * | 1992-08-04 | 1994-11-29 | Morgan Crucible Company Plc | Sealed conductive active alloy feedthroughs |
US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
-
1994
- 1994-06-10 US US06/258,232 patent/US5600530A/en not_active Expired - Fee Related
-
1995
- 1995-06-01 JP JP8501777A patent/JPH10501925A/ja active Pending
- 1995-06-01 WO PCT/GB1995/001257 patent/WO1995034911A1/en not_active Application Discontinuation
- 1995-06-01 EP EP95921011A patent/EP0764342A1/en not_active Withdrawn
- 1995-06-01 KR KR1019960706716A patent/KR970703614A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO1995034911A1 (en) | 1995-12-21 |
EP0764342A1 (en) | 1997-03-26 |
JPH10501925A (ja) | 1998-02-17 |
US5600530A (en) | 1997-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970703614A (ko) | 정전척 | |
US6881071B2 (en) | Power semiconductor module with pressure contact means | |
JP2726222B2 (ja) | カットオフ可能な高出力半導体素子 | |
EP1202348A3 (en) | Semiconductor device and method of manufacturing same | |
JPS59141249A (ja) | 電力チツプ・パツケ−ジ | |
JPH0819097A (ja) | 音響絶縁器 | |
JP2002231884A (ja) | 高出力半導体モジュール及びその用途 | |
US20040196614A1 (en) | Electrostatic chuck and production method therefor | |
JP2000216332A (ja) | 半導体装置 | |
JP3216305B2 (ja) | 半導体装置 | |
JP2002522904A (ja) | 高電圧モジュール用の基板 | |
JPH02148795A (ja) | ハイブリッドモジュールのリード接続方法 | |
US20190356098A1 (en) | Method for Bonding an Electrically Conductive Element to a Bonding Partner | |
JP2000232189A (ja) | 半導体装置 | |
JP2001110877A (ja) | 金属端子を有するセラミック−金属複合部品、及びその製造方法 | |
JP2001274278A (ja) | マイクロ波半導体装置およびその製造方法 | |
JPH05315467A (ja) | 混成集積回路装置 | |
JP2000243883A (ja) | 半導体ダイを実装するためのALN絶縁層を有するアルミニウム外装ALSiC基板 | |
JPH11220011A (ja) | 端子構造 | |
US20210327724A1 (en) | Method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing | |
US7601560B2 (en) | Method for producing an electronic circuit | |
JPH06268120A (ja) | パワースイッチングモジュールのヒートシンク | |
JPH10154770A (ja) | セラミックスパッケージの製造方法 | |
JP2002009570A (ja) | 電子部品とその製造方法 | |
JPH0453095B2 (ko) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |