KR970067809A - 멀티-레이어 버텀 리드 패키지 - Google Patents

멀티-레이어 버텀 리드 패키지 Download PDF

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Publication number
KR970067809A
KR970067809A KR1019960005799A KR19960005799A KR970067809A KR 970067809 A KR970067809 A KR 970067809A KR 1019960005799 A KR1019960005799 A KR 1019960005799A KR 19960005799 A KR19960005799 A KR 19960005799A KR 970067809 A KR970067809 A KR 970067809A
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South Korea
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lead
package
layer bottom
circuit film
insulating circuit
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KR1019960005799A
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English (en)
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KR100192180B1 (ko
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박계찬
노길섭
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김주용
현대전자산업 주식회사
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Priority to KR1019960005799A priority Critical patent/KR100192180B1/ko
Priority to DE19709259A priority patent/DE19709259B4/de
Priority to JP9069105A priority patent/JP2997744B2/ja
Priority to GB9704631A priority patent/GB2310954B/en
Priority to CN97109573A priority patent/CN1085409C/zh
Priority to US08/812,612 priority patent/US5834836A/en
Publication of KR970067809A publication Critical patent/KR970067809A/ko
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Publication of KR100192180B1 publication Critical patent/KR100192180B1/ko

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

본 발명은 반도체 패키지에 관한 것으로, 특히 적어도 두 개 이상의 반도체 칩을 하나의 몸체로 패키징함과 아울러 상기 칩의 외부로의 신호 전달 경로인 리드 프레임의 아웃 리드를 몸체의 하면으로 노출시켜 구성함으로써 패키지의 대용량화, 경바박소형화 및 실장율 향상을 도모할 수 있는 멀티-레이어 버텀 리드 패키지에 관한 것이다. 이와 같은 본 발명은 적어도 두 개 이상의 반도체 칩; 상기 반도체 칩을 맞대어 지지함과 아울러 칩의 전기적 도통을 위한 메탈 라인과 상하에 위치하는 칩의 동일 단자끼리 연결하기 위한 다수의 비아가 형성된 절연회로필름; 상기 절연회로필름의 일측에 접속되어 칩의 외부로의 전기적 신호 전달 경로를 이루는 인너 리드 및 이 인너 리드로부터 연장되는 아웃 리드를 가지는 리드 프레임; 상기 리드 프레임의 인저 리드와 절연회로필름; 상기 절연회로필름의 일측에 접속되어 칩의 외부로의 전기적 신호 전달 경로를 이루는 인너 리드 및 이 인너 리드로부터 연장되는 아웃 리드를 가지는 리드 프레임; 상기 리드 프레임의 인저 리드와 절연회로필름, 그리고 절연회로필름과 반도체 칩의 접속부를 결속하기 위하여 충진되는 이방성 도전체; 및 상기 반도체 칩, 절연회로필름, 리드 프레임의 인너 리드를 포함하는 일정 면적을 에워 싸도록 형성되는 패키지 몸체를 구비하여 구성되고, 상기 패키지 몸체의 하면에 리드 프레임의 아웃 리드가 동일 평면으로 노출되어 구성된다. 이러한 본 발명에 의하면, 대용량이면서도 경박단소한 패키지를 구현할 수 있고, 또 핀 컨피규레이션의 자유로움으로 유저의 요구에 쉽게 대응할 수 있다는 효과가 있으며, 고신뢰성을 달성할 수 있다.

Description

멀티-레이어 버텀 리드 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시례에 의한 멀티-레이어 버텀 리드 패키지의 구조를 보인 단면도.

Claims (19)

  1. 적어도 두 개 이상의 반도체 칩; 상기 반도체 칩을 맞대어 지지함과 아울러 칩의 전기적 도통을 위한 메탈 라인과 상하에 위치하는 칩의 동일 단자끼리 연결하기 위한 다수의 비아가 형성된 절연회로필름; 상기 절연회로필름의 일측에 접속되어 칩의 외부로의 전기적 신호 전달 경로를 이루는 인너 리드 및 이 인너 리드로부터 연장되는 아웃 리드를 가지는 리드 프레임; 상기 리드 프레임의 인저 리드와 절연회로필름; 그리고 절연회로필름과 반도체 칩의 접속부를 결속하기 위하여 충진되는 이방성 도전체; 및 상기 반도체 칩, 절연회로필름, 리드 프레임의 인너 리드를 포함하는 일정 면적을 에워 싸도록 형성되는 패키지 몸체를 구비하여 구성되고, 상기 패키지 몸체의 하면에 리드 프레임의 아웃 리드가 동일 평면으로 노출되어 구성된 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  2. 제1항에 있어서,상기 절연회로필름은 폴리머계열의 베이스 필름 상하면에 소정의 메탈층으로 이루어지는 메탈 라인이 형성되고, 이 메탈 라인상에는 칩의 본딩 패드와 접속되는 다수의 인너 패드 및 리드 프레임의 인너 리드와 접속되는 다수의 아웃 패드가 형성되며, 상기 베이스 필름을 관통하도록 형성된 비아홀에 메탈을 충진하여 칩의 동일 단자를 연결하는 비아를 형성하여서된 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  3. 제2항에 있어서, 상기 메탈 라인의 메탈층은 Cu, Ni, Au; Cu, Ni, Cr, Au; Cu, Ni, Co, Au; 또는 10-8Ω/cm 이상의 전기 전도 저항 값을 갖는 메탈로 구성되며 1mil이내로 형성되는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  4. 제2항에 있어서, 상기 인너 패드와 아웃 패드는 1㎛∼20㎛의 높이로 돌출 형성되고, 5㎛×5㎛∼200㎛×200㎛의 크기로 형성되는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  5. 제2항에 있어서, 상기 비아 홀의 크기는 10㎛ 이상 200㎛ 이하의 지름으로 형성되는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  6. 제1항에 있어서, 상기 리드 프레임은 사이드 레일의 내측에 절연회로필름의아웃 패드와 연결되는 인너리드와 기판 접속을 위한 아웃 리드를 가지는 다수의 리드가 댐바에 의하여 지지되어 있는 구조로 된 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  7. 제6항에 있어서, 상기 리드 프레임의 두께는 최소 2mil 이상인 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  8. 제6항에 있어서, 상기 리드 프레임의 재질은 Cu, MF202, Alloy42, Orin194 또는 Alloy50인 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  9. 제1항에 있어서, 상기 이방성 도전체는 액체 및 고체 상태를 포함하는 레진으로서, 에폭시 또는 변형된 에폭시 레진, 폴리에스터 또는 변형된 폴리머, 아크릴에스터 또는 변형된 에스터, 실리콘 레진, 페녹시 레진, 폴리 우레탄, 폴리설파이드, 시아노 아크릴레이트, 폴리알렉신 및 그외 열, 자외선, 실론으로 경화되는 폴리머 중에서 선택되는 하나로 구성된 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  10. 제9항에 있어서, 상기 이방성 도전체는 전기적 도통을 위한 파티클을 함유하는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  11. 제10항에 있어서, 상기 파티클은 Ag, Ni, In, Sn, 인듐 틴 옥사이드 또는 이들의 합금으로 이루어지거나, 또는 10-8Ω/cm 이상의 전기 전도 저항값을 갖는 금속으로 이루어지는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  12. 제11항에 있어서, 상기 파티클의 크기는 3㎛∼15㎛의 크기로 이루어지고, 형상은 구형, 사각형, 삼각형, 육면체, 사각뿔 및 삼각뿔을 포함하는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  13. 제1항 내지 제12항 중 어느 한 항에 있어서, 패키지 몸체의 하면에 그 내측으로 함몰되는 다수의 딤플이 형성되고, 이 딤플에 리드 프레임의 아웃 리드가 몸체의 하면과 동일 평면을 유지하도록 위치되어 구성되는 멀티-레이어 버텀 리드 패키지.
  14. 제13항에 있어서, 상기 딤플은 4mil×4mil∼4mm×5mm의 크기를 갖는 직사각형 또는 정사각형으로 이루어지고, 최소1mil에서 400㎛의 깊이를 갖도록 형성되는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  15. 제13항에 있어서, 양측의 딤플이 서로 엇갈리도록 배열되어 지그 재그 형태의 아웃 리드를 갖도록 구성된 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  16. 제15항에 있어서, 양측의 딤플이 소정의 간격을 유지하여 지그 재그 형태로 배역되어 있는 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  17. 제16항에 있어서, 상기 양측 딤플의 간격은 최소 1mil에서 5mm안 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  18. 제13항에 있어서, 상기 딤플에 아웃 리드가 절곡되어 위치되고, 이 아웃 리드의 절곡 각도는 -10°에서 +10°인 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
  19. 제1항에 있어서, 리드 프레임의 리드를 다운-셋하여 구성한 것을 특징으로 하는 멀티-레이어 버텀 리드 패키지.
KR1019960005799A 1996-03-06 1996-03-06 멀티-레이어 버텀 리드 패키지 KR100192180B1 (ko)

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KR1019960005799A KR100192180B1 (ko) 1996-03-06 1996-03-06 멀티-레이어 버텀 리드 패키지
DE19709259A DE19709259B4 (de) 1996-03-06 1997-03-06 Mehrlagiges Bodenanschlussgehäuse
JP9069105A JP2997744B2 (ja) 1996-03-06 1997-03-06 マルチレイヤボトムリードパッケージ
GB9704631A GB2310954B (en) 1996-03-06 1997-03-06 Multi-layer bottom lead package
CN97109573A CN1085409C (zh) 1996-03-06 1997-03-06 底部引线的半导体封装件
US08/812,612 US5834836A (en) 1996-03-06 1997-03-06 Multi-layer bottom lead package

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GB2310954A (en) 1997-09-10
GB9704631D0 (en) 1997-04-23
DE19709259B4 (de) 2006-02-23
CN1085409C (zh) 2002-05-22
CN1164764A (zh) 1997-11-12
US5834836A (en) 1998-11-10
DE19709259A1 (de) 1997-11-06
KR100192180B1 (ko) 1999-06-15
JP2997744B2 (ja) 2000-01-11
GB2310954B (en) 2000-09-20
JPH10303365A (ja) 1998-11-13

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