KR970013100A - 반도체 및 반도체기판표면의 산화막의 형성방법 - Google Patents

반도체 및 반도체기판표면의 산화막의 형성방법 Download PDF

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KR970013100A
KR970013100A KR1019960031733A KR19960031733A KR970013100A KR 970013100 A KR970013100 A KR 970013100A KR 1019960031733 A KR1019960031733 A KR 1019960031733A KR 19960031733 A KR19960031733 A KR 19960031733A KR 970013100 A KR970013100 A KR 970013100A
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oxide film
semiconductor substrate
film
semiconductor
forming
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히카루 코바야시
켄지 요네다
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히카루 코바야시
스기야마 히로타카
마쯔시다덴시코교 가부시기가이샤
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Abstract

본 발명은 반도체집적회로 등에 사용되는 MOS 트랜지스터 및 MOS 용량의 극박게이트산화막 및 용량산화막 등에 응용이 가능한 반도체 및 반도체기판표면의 산화막의 형성방법에 관한 것으로서, 바도체기판(1)표면에 산화막(6)과 금속박막(7)을 적어도 포함하는 방도체로서, 상기 금속박막은 두께 0.5∼30㎚의 범위가 산화촉매기능을 가진 금속이고, 상기 산화막은 상기 산화촉매기능을 가진 금속에 의해서 형성된 막을 포함한 두께 1∼20㎚의 범위의 막으로 하므로써, 고온가열을 사용하지 않고 방도체기판의 표면에 고품질의 산화막을 제어성좋게 형성하는 동시에, 금속배선 이후에 게이트산화막을 형성할 수 있는 반도체를 제공하는 것을 목적으로 한것이며 그해 결수단으로서, 바도체기판(1)상에 두께 0.1∼2.5㎚의 범위의 제1산화막(5)을 형성하고, 이어서 제1산화막(5)위에 산화촉매기능을 가진 금속박막(예를들면 백금막)(6)을 중착법에 의해 두께 0.5∼30㎚의 범위에서 형성하고, 그런 다음 25∼600°C의 온도에서 또한 산화분위기속에서 열처리를 행하여 제2산화막(7)을 형성하는 것을 특징으로 한것이다.

Description

반도체 및 반도체기판표면의 산화막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예의 반도체가판의 산화방법을 사용해서 MOS 용량을 형성하는 경우의 공정도,(a)는 실리콘기판상에 분리영역과 활성영역을 형성한 공정, (b)는 실리콘표면의 자연산화막을 제거한 공정, (c)는 실리콘기판의 표면에 화학적산화막(제1산화막)을 형성한 공정, (d)는 산화촉매기능을 가진 금속막으로서 백금막을 형성한 공정, (e)는 산화분위기속에서 가열처리한 실리콘제 2산화막을 형성한 공정, (f)는 전극막을 형성한 공정, (g)는 게이트전극형성한 공정.

Claims (17)

  1. 반도체기판표면에 산화막과 금속박막을 이 순번대로 포함한 반도체에 있어서, 상기 금속박막을 두께 0.5∼30㎚의 범위의 산화촉매긴으을 가진 금속이고, 또한 상기 산화막은 상기 산화촉매기능을 가진 금속에 의해서 형성된 막을 포함한 두께 1∼20㎚의 범위의 막인 것을 특징으로 하는 반도체.
  2. 제1항에 있어서, 산화막이 제1 산화막과 제2 산화막으로 형성되고, 제1산??가의 두께가 0.1∼2.5㎚의 범위이고, 제2산화막의 두께가 0.9∼18.5㎚의 법위인 것을 특징으로 하는 반도체.
  3. 제1항에 있어서, 산화촉매기능을 가진 금속박막이 백금 및 팔라듐으로부터 선택되는 적어도 하나의 금속인 것을 특징으로 하는 반도체.
  4. 제3항에 있어서, 산화촉매기기능을 가진 금속박막이 증착법에 의해 형성되어 있는 것을 특징으로 하는 반도체.
  5. 제1항에 있어서, 반도체기판이 단결정실리콘, 다결정실리콘, 비정질실리콘, 비화갈륨 및 인화인듐으로부터 선택되는 적어도 하나의 재료인 것을 특징으로 하는 반도체.
  6. 제1항에 있어서, 제2산화막의 막두께가 제1산화막의 막두께보다 두껍고, 또한 1∼20㎚의 범위인 것을 특징으로 하는 반도체.
  7. 반도체기판면에 산화막을 형성할 때에, 반도체기판상에 두께 0.1∼2.5㎚의 범위의 제1산화막을 형성하고, 이어서 상기 제1산화막위에 산화촉매기능을 가진 금속박막을 두께 0.5∼30㎚의 범위에서 형성하고, 그런 다음 600°C 이하의 온도에서 또한 산화분위기속에서 열처리를 행하고 제2산화막을 형성하는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  8. 제7항에 있어서, 반도체기판상에 제1산화막을 형성하는 방법이, 반도체기판을 하기 A∼로부터 선택되는 적어도 하나의 액체속에 침지함으로써 형성하는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법. A. 열농질산, B. 농황산 및 과산화수소의 가열용액, C. 염산 및 과산화수소의 가열용액, D. 과산화수소수, E. 오존용해소, F. 질산 및 황산의 가열액, G. 플루오르화수소산, H. 비등수, I. 암모니아수 및 과산화수소수의 가열용액.
  9. 제7항에 있어서, 반도체기판상에 산화막을 형성하는 방법이, 반도체기판??르 오존가스속에 폴로시키거나, 또는 오존가스속에서 자외선을 조사하면서 폭로시킴으로써 형성하는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  10. 제7항에 있어서, 산화촉매기능을 가진 금속박막이, 백금 및 팔라듐으로부터 선택되는 적어도 하나의 금속인 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  11. 제10항에 있어서, 산화촉매기능을 가진 금속박막이 중착법에 의해 형성되어 있는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  12. 제7항에 있어서, 산화분위기속에서 열처리를 행할 때에, 산화분위기가 하기 a∼g로부터 선택되는 적어도 하나의 분위기인 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법. a. 건조산소분위기, b. 건조산소와 비산화성가스의 혼합가스분위기, c. 수증기를 함유한 산소분위기, d. 수증기를 함유한 산소와 비산화성가스의 혼합가스분위기, e. 오존가스분위기 또는 오존가스를 함유한 분위기, f. N2O를 함유한 산소분위기속, g. NO를 함유한 산소분위기속.
  13. 제7항에 있어서, 산화분위기속에서 열처리온도가 25∼600°C의 범위인 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  14. 제7항에 있어서, 반도체가판이 다결정실리콘, 다결정실리콘, 비정질실리콘, 비화갈륨 및 인화인듐으로부터 선택되는 적어도 1개의 재료인 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  15. 제7항에 있어서, 반도체가판표면에 산화막을 형성하기 전에, 미리 반도체기판표면에 존재하는 자연산화막 또는 불순물을 제거하는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  16. 제7항에 있어서, 제2산화막의 막두께가, 제1산화막의 막두께보다 두껍고, 또한 1∼20㎚의 범위인 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
  17. 제7항에 있어서, 산화분위기속에서의 열처리를, 반도체기판표면에 금속배선을 형성한 후에 행하는 것을 특징으로 하는 반도체기판표면의 산화막의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960031733A 1995-08-01 1996-07-31 반도체 및 반도체기판표면의 산화막의 형성방법 KR100202003B1 (ko)

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