KR960039473A - 비수성 2차 전지 및 흑연 분말의 제조방법 - Google Patents

비수성 2차 전지 및 흑연 분말의 제조방법 Download PDF

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KR960039473A
KR960039473A KR1019960010699A KR19960010699A KR960039473A KR 960039473 A KR960039473 A KR 960039473A KR 1019960010699 A KR1019960010699 A KR 1019960010699A KR 19960010699 A KR19960010699 A KR 19960010699A KR 960039473 A KR960039473 A KR 960039473A
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graphite powder
graphite
secondary battery
negative electrode
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히데도시 혼보
세이지 다께우찌
히데또 모모세
다쯔오 호리바
야스시 무라나까
요시또 이시이
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가나이 쯔도무
가부시키가이샤 히다치 세사쿠쇼
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Abstract

본 발명은 리튬의 합장·방출반응의 가역성이 뛰어난 탄소재료, 및 이를 음극활성물질로 사용하는 높은 에너지 밀도와, 급속 충방전 특성이 뛰어난 비수성 2차 전지와, 입경 100㎛ 이하이고 결정 구조 중에 존재하는 능면체 결정 구조를 갖는 흑연 분말을 20중량%로 함유하는 흑연분말을 비수성 2차 전지의 음극 활성물질로 사용되는 흑연분말과 흑연을 제트∼밀로 분쇄한 후, 900℃ 이상의 온도에서 가 열처리하는 것을 특징으로 하는 흑연 분말의 제조 방법.을 제공한다.

Description

비수성 2차 전지 및 흑연 분말의 제조 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래 흑연의 X선 회절패턴을 나타낸 도면이고 제2도는 본 발명의 실시에 1(가열처리온도;900℃)에서 얻은 흑연 분말의 X선 회절패턴을 나타낸 도면이며, 제3도는 본 발명의 실시에 1(가열처리온도; 2850℃)에서 얻은 흑연 분말의 X선 회절패턴을 나타낸 도면이다.

Claims (18)

  1. 양극과 음극과 전해액을 포함하여 이루어지고, 상기 양극 또는 음극에서 각각 이온을 방출 혹은 흡장하는 반응을 반복하여 충방전하는 비수성2차 전지에 있어서, 상기 음극이능면체( 面體) 결정 구조를 가지는 흑연 분말을 0 내지 20중량%의 범위로 함유하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  2. 양극과 음극과 전해액을 포함하여 이루어지고, 상기 양극 또는 음극에서 각각 이온을 방출 혹은 흡장하는반응을 반복하여 충방전하는 비수성 2차 전지에 있어서, 상기 음극이 육방결정 구조를 가지는 흑연 분말을 80중량% 이상 함유하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  3. 양극과 음극과 전해액을 포함하여 이루어지고, 상기 양극 또는 음극에서 각각 이온을 방출 혹은 흡장하는 반응을 반복하여 충방전하는 비수성 2차 전지에 있어서, 상기 음극이 CuKα선에 의한 X선 회절패턴에서 회절 각 41.7도와, 42.7도 사이의 범위에 나타나는 회절피크(P1)와, 회절각 42.7도와, 43.7도 사이의 범위에 나타나는 회절피크(P2)의 강도비(P2/P1)가 0.92 이하인, 흑연 분말을 함유하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  4. 양극과 음극과 전해액을 포함하여 이루어지고, 상기 양극 또는 음극에서 각각 이온을 방출 혹은 흡장하는 반응을 반복하여 충방전하는 비수성 2차 전지에 있어서, 상기 음극이, CuKα선에 의한 X선 회절패턴에서 회절 41.7도와, 42.7도 사이의 범위에 나타나는 회절피크(P1)와, 회절각 45.3도와 46.6도 사이의 범위에 나타나는 회절피크(P3)의 강도비(P3/P1)가 0.75 이하인, 흑연 분말을 함유하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  5. 제3항 또는 제4항에 있어서, 상기 X선 회절패턴에서 회절각 43.7도와, 45.0도 사이의 범위에 나타나는 회절피크(P4)의 절반 띠폭(hAlf bAnd width)이 0.45도 이하인 것을 특징으로 하는 비수성 2차 전지.
  6. 제3항 또는 제4항에 있어서, 상기 X선 회절패턴에서 최대 회절피크의 회절각(2θ,θ;브래그각)이 26.2도와, 26.5도 사이의 범위인 것을 특징으로 하는 비수성 2차 전지.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 상기 흑연 분말이 Si를 30ppm 이하로 함유하는 것을 특징으로 하는 비수성 2차 전지.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 흑연 분말의 입경이 100㎛ 이하인 것을 특징으로 하는 비수성 2차 전지.
  9. 제1항 내지 제8항 중 어느 한 항에 있어서, 상기 양극이 LixMO2(단, 0＜x≥이고 M은 Co, Ni, Mn, Fe 중에서 선택되는 1종 이상의 원소이다)의 화학식으로 표시되는 화합물을 양극 활성물질로 포함하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  10. 제1항 내지 제8항 중 어느 한 항에 있어서, 상기 양극이 LiMO2O4의 화학식으로 표시되는 화합물을 양극 활성물질로 포함하여 구성되는 것을 특징으로 하는 비수성 2차 전지.
  11. 원료흑연을 2000℃ 이상의 온도로 가열처리하는 단계와, 상기 가열처리된 원료흑연을 분쇄하는 단계와, 상기 분쇄된 흑연을 체질하여 최대 입경이 100㎛인 흑연 분말을 얻는 단계와, 상기 흑연 분말을 가열처리하여 그 결정구조를 육방결정 구조로 변형시키는 단계와, 상기한 육방결정 구조로 변형시키기 위해 가열처리하는 온도보다 더 높은 온도에서 가열처리하여 불순물을 제거하는 단계를 포함하여 이루어지는 흑연 분말의 제조 방법.
  12. 제11항에 있어서, 상기 흑연 분말의 구조를 육방결정 구조로 변형시키기 위하여 가열처리하는 온도가 900℃ 내지 1100℃의 범위인 것을 특징으로 하는 흑연 분말의 제조 방법.
  13. 제11항에 있어서, 상기 불순물 제거를 위하여 가열처리하는 온도가 2700℃ 내지 2900℃의 범위인 것을 특징으로 하는 흑연 분말의 제조 방법.
  14. 제11항에 있어서, 상기 가열처리를 상기 분쇄 공정후에 실시하는 것을 특징으로 하는 흑연 분말의 제조 방법.
  15. 원료흑연을 2000℃ 이상의 온도로 가열처리하는 단계와, 상기 가열처리된 원료흑연을 분쇄하는 단계와, 상기 분쇄된 흑연을 체질하여 최대 입경이 100㎛인 흑연 분말을 얻는 단계와, 상기 흑연분말을 산성용액중에 침지처리하는 단계와, 물로 세척하는 단계와, 중화시키는 단계와, 건조시키는 단계를 포함하여 이루어지는 흑연 분말의 제조방법.
  16. 제15항에 있어서, 상기한 산성용액이 황산, 질산, 과염소산, 인산 또는 불화수소산 중에서 선택되는 1종 이상의 화합물을 포함하여 이루어지는 것을 특징으로 하는 흑연 분말의 제조방법.
  17. 제11항 내지 제15항 중 어느 한 항에 있어서, 상기 분쇄하는 단계가 제트∼밀의 사용하여 실시되는 것을 특징으로 하는 흑연 분말의 제조 방법.
  18. 제11항 내지 제17항 중 어느 항 항에 있어서, 상기 원료흑연으로, CuKα 선에 의한 X선 회절패턴에서 최대 회절피크의 회절각이 26.2도 내지 26.5도의 범위에 있는 흑연을 사용하는 것을 특징으로 하는 흑연 분말의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960010699A 1995-04-10 1996-04-10 비수성 2차전지 및 흑연분말의 제조방법 KR100264290B1 (ko)

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