KR960016651A - 전기 전도성 페이스트 재료 및 응용 - Google Patents

전기 전도성 페이스트 재료 및 응용 Download PDF

Info

Publication number
KR960016651A
KR960016651A KR1019950036103A KR19950036103A KR960016651A KR 960016651 A KR960016651 A KR 960016651A KR 1019950036103 A KR1019950036103 A KR 1019950036103A KR 19950036103 A KR19950036103 A KR 19950036103A KR 960016651 A KR960016651 A KR 960016651A
Authority
KR
South Korea
Prior art keywords
particles
electrically conductive
group
polymeric material
coating
Prior art date
Application number
KR1019950036103A
Other languages
English (en)
Other versions
KR100229581B1 (ko
Inventor
케이. 강 성
오. 그래햄 테레시타
푸루쇼타만 샘패쓰
마리에 롤단 주디쓰
에프. 사라프 래비
Original Assignee
윌리엄 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 티. 엘리스, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 윌리엄 티. 엘리스
Publication of KR960016651A publication Critical patent/KR960016651A/ko
Application granted granted Critical
Publication of KR100229581B1 publication Critical patent/KR100229581B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13199—Material of the matrix
    • H01L2224/1329—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29409—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29411—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29413—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83886—Involving a self-assembly process, e.g. self-agglomeration of a material dispersed in a fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0218—Composite particles, i.e. first metal coated with second metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10689—Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10719—Land grid array [LGA]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Powder Metallurgy (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Adjustable Resistors (AREA)
  • Paints Or Removers (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

본 발명의 구조물 및 가공 방법을 기재한다. 구조물은 고분자 재료 및 전기 전도성 코팅(예:Sn)을 갖는 입자(예:Cu)의 조합이다. 인접한 입자들의 코팅을 융합시키기 위해서 열을 가한다. 고분자 재료는 열가소성이다. 구조물을 두 개의 전기 전도성 표면, 예를 들면 칩 및 기판 패드 사이에 위치시켜서 두 패드 사이에 전기적 상호 접속 및 접착을 제공한다.

Description

전기 전도성 페이스트 재료 및 응용
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 페이스트의 개략도,
제4도는 열가소성 고분자 수지의 매트릭스 중에 충전된 입자들을 포함한 본 발명에 따른 전기 전도성 페이스트 재료의 개략도, 입자들은 저융점, 비독성 금속으로 도포되고, 이 금속은 융합되어 인접한 입자들 사이 및, 그리고 이 입자들과 페이스트를 사용하여 접합되는 접촉면들 사이에 금속 결합(metallurgical bonding)을 달성한다,
제5도는 본 발명에 따른 전기 전도성 페이스트에 의해 회로기판에 접속된 표면 장착 집적 회로 패키지의 개략 단면도,
제6도는 본 발명에 따른 전기 전도성 페이스트를 사용하여 전기 전도성 고밀도 인쇄 회로 기판에 집적 부착시킨 집적 회로칩의 개략 단면도.

Claims (34)

  1. 각각 전기 전도성 코팅을 갖는 복수개의 입자들을 포함하여 이루어지며, 이 입자들 중 적어도 일부는 다른 입자들과 상기 전기 전도성 코팅을 통해 융합된 것인 구조물.
  2. 제1항에 있어서, 상기 복수개의 입자들이 고분자 재료 내에 매립되는 구조물.
  3. 제1항에 있어서, 상기 구조물이 전기적 상호 접속 수단인 구조물.
  4. 제1항에 있어서, 상기 전기 전도성 코팅이 상기 입자의 융점 보다 낮은 융점 온도를 갖는 구조물.
  5. 제1항에 있어서, 제1 및 제2표면을 추가로 포함하며 그 사이에 상기 구조물이 배치되어 상기 제1 및 제2표면 사이에 상호 접속을 제공하는 구조물.
  6. 제2항에 있어서, 상기 고분자 재료가 경화되는 구조물.
  7. 제1항에 있어서, 상기 입자들이 Cu, Au, Ag, Al, Pd 및 Pt로 이루어진 군에서 선택되는 재료로 형성되는 구조물.
  8. 제1항에 있어서, 상기 코팅이 Sn, Zn, In, Pb, Bi 및 Sb로 이루어진 군에서 선택되는 구조물.
  9. 제1항에 있어서, 상기 고분자 재료가 폴리이미드, 실록산, 폴리이므드 실록산, 및 리그닌, 셀룰로오즈, 동요(wood oil) 및 작황유로부터 유도되는 생물질-기재 고분자 수지로 이루어진 군에서 선택되는 구조물.
  10. 제2항에 있어서, 상기 고분자 재료가 경화되지 않은 열가소성 접착제인 구조물.
  11. 제1항에 있어서, 상기 고분자 재료가 경화된 열가소성 접착제인 구조물.
  12. 제5항에 있어서, 상기 고분자 재료가 상기 제1 및 제2표면의 접착 접합을 제공하는 구조물.
  13. 제5항에 있어서, 상기 제1전기 전도성 표면이 제1전자 소자 접촉 위치이고, 상기 제2전기 전도성 표면이 제2전자 소자 접촉 위치인 구조물.
  14. 제13항에 있어서, 상기 제1전자 소자가 반도체 칩이고 상기 제2전자 소자가 패키지 기판인 구조물.
  15. 제4항에 있어서, 상기 제1 및 제2전기 전도성 표면 중 하나가 땜납 표면인 구조물.
  16. 제1항에 있어서, 상기 구조물이 전자 소자인 구조물.
  17. 제16항에 있어서, 상기 구조물이 컴퓨터 소자인 구조물.
  18. 입자와 입자 사이에 공간을 갖고 상호 접속된 입자들의 망상 구조를 이루고; 상기 입자들은 각각 그 위에 융합가능한 재료의 코팅을 갖고; 상기 망상 구조 중의 인접한 입자들은 상기 융합가능한 재료를 통해서 함께 접착되는 구조물.
  19. 제18항에 있어서, 사기 공간이 고분자 재료를 함유하는 구조물.
  20. 고분자 재료 내에 매립된, 표면에 전기 전도성 코팅을 갖는 입자들의 페이스트를 제공하고; 상기 페이스트를 제1 및 제2전기 전도성 표면 사이에 배치시키고; 상기 페이시트를, 상기 코팅을 인접한 입자 위에 융합시키기에 충분한 제1온도로 가열하여 입자들 사이에 공간을 갖는 상호 접속된 입자들의 망상 구조를 형성하고; 상기 페이스트를 상기 공간에서 상기 고분자를 경화시키기에 충분한 제2온도로 가열하는 단계를 포함하는 방법.
  21. 제20항에 있어서, 상기 코팅이 Sn, Zn, In, Bi, Pb 및 Sb로 이루어진 군에서 선택되는 방법.
  22. 제21항에 있어서, 상기 입자들이 Cu, Ni, Au, Ag, Al, Pd 및 Pt로 이루어진 군에서 선택되는 재료로 형성되는 방법.
  23. 제20항에 있어서, 상기 고분자 재료가 폴리이미드, 실록산, 폴리이므드 실록산, 및 리그닌, 셀룰로오즈, 동요 및 작황유로부터 유도되는 생물질-기재 고분자 수지로 이루어진 군에서 선택되는 방법.
  24. 제20항에 있어서, 상기 제1전기 전도성 표면이 칩 패드이고 상기 제2전기 전도성 표면이 기판 위이며, 가열 및 전력을 인가하여 상기 칩을 번-인(burn-in)시키는 단계; 및 상기 칩을 상기 기판으로부터 분리시키는 단계를 추가로 포함하는 방법.
  25. Sn 및 In으로 이루어진 군에서 선택되는 코팅을 갖는 구리 입자들이 열가소성 고분자 전구체 및 용매로 함유되어 이루어지는 구조물.
  26. 제1항에 있어서, 상기 입자들이 상기 구조물의 약 30 중량% 내지 약 90 중량%인 구조물.
  27. 제20항에 있어서, 추가로 상기 제1표면을 상기 제2표면에 압축시키는 것을 특징으로 하는 방법.
  28. 제20항에 있어서, 상기 제1온도 및 상기 제2온도가 약 150℃ 내지 약 250℃인 방법.
  29. 제24항에 있어서, 상기 분리 단계가 용매에 존재하에 가열함으로써 수행되는 방법.
  30. Sn, In, Bi, Sb 및 이들의 조합으로 이루어진 군에서 선택된 재료의 층으로 도포된 구리 분말과 융제의 혼합물로 이루어진 구조물.
  31. 제30항에 있어서, 추가로 NMP 용매, 부티르산 및 에틸렌 글리콜, 및 폴리이미드, 실록산, 폴리이미드 실록산 및 생물질-기재 고분자 수지로 이루어진 군에서 선택되는 재료를 포함하는 구조물.
  32. 제31항에 있어서, 상기 구리 분말이 상기 구조물의 약 30 중량% 내지 약 90 중량%인 구조물.
  33. 제5항에 있어서, 상기 입자들이 상기 제1 및 상기 제2 표면에 금속 결합을 형성하는 구조물.
  34. 제5항에 있어서, 상기 제1 및 상기 제2표면이 전기 전도성인 구조물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950036103A 1994-10-20 1995-10-19 전기 전도 성페이스트재료 및 응용 KR100229581B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32662694A 1994-10-20 1994-10-20
US8/326,626 1994-10-20
US08/326,626 1994-10-20

Publications (2)

Publication Number Publication Date
KR960016651A true KR960016651A (ko) 1996-05-22
KR100229581B1 KR100229581B1 (ko) 1999-11-15

Family

ID=23273017

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036103A KR100229581B1 (ko) 1994-10-20 1995-10-19 전기 전도 성페이스트재료 및 응용

Country Status (8)

Country Link
EP (1) EP0708582A1 (ko)
JP (2) JPH08227613A (ko)
KR (1) KR100229581B1 (ko)
CN (1) CN1084917C (ko)
CA (1) CA2159234A1 (ko)
MY (1) MY118121A (ko)
SG (1) SG77619A1 (ko)
TW (1) TW340132B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100313766B1 (ko) * 1999-12-30 2001-11-15 구자홍 전도성 입자의 제조방법 및 전도성 입자 구조
KR20030050333A (ko) * 2001-12-18 2003-06-25 태크뱅크 주식회사 전자 패키징 시간 단축용 엠디씨

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948533A (en) * 1990-02-09 1999-09-07 Ormet Corporation Vertically interconnected electronic assemblies and compositions useful therefor
JP3260253B2 (ja) * 1995-01-06 2002-02-25 松下電器産業株式会社 半導体装置の検査方法と検査用導電性接着剤
JPH09331142A (ja) * 1996-06-12 1997-12-22 Matsushita Electric Ind Co Ltd 電子部品の実装方法
DE19640192A1 (de) * 1996-09-30 1998-04-02 Bosch Gmbh Robert Verfahren zur Flip-Chip-Montage
JP3721660B2 (ja) * 1996-10-18 2005-11-30 富士通株式会社 導電材料及び導電性ペースト
JPH10200241A (ja) * 1997-01-06 1998-07-31 Fujitsu Ltd 導電性接着剤およびそれを使用する部品実装方法
JPH1145616A (ja) * 1997-05-28 1999-02-16 Yazaki Corp 導電性フィラー、導電性ペーストおよび回路体の形成方法
TW396471B (en) * 1997-06-04 2000-07-01 Ibm Electrodeposition of low temperature, high conductivity, powder materials for electrically conductive paste formulations
CA2244332C (en) * 1997-07-30 2002-04-02 Becton, Dickinson And Company Bonding agent and method of bonding electrode to printed conductive trace
KR100339183B1 (ko) 1998-07-13 2002-05-31 포만 제프리 엘 접착제 번짐이 감소된 다이 부착법
US6498051B1 (en) 1999-01-27 2002-12-24 Citizen Watch Co., Ltd. Method of packaging semiconductor device using anisotropic conductive adhesive
US6270363B1 (en) 1999-05-18 2001-08-07 International Business Machines Corporation Z-axis compressible polymer with fine metal matrix suspension
WO2001003175A1 (de) * 1999-06-30 2001-01-11 Siemens Dematic Ag Elektrisch-mechanische verbindung zwischen elektronischen schaltungssystemen und substraten, sowie verfahren zu deren herstellung
JP4050865B2 (ja) 1999-12-01 2008-02-20 シャープ株式会社 半導体レーザ装置及びその製造方法及びそれを用いた光ピックアップ
ES2161659T1 (es) * 2000-04-05 2001-12-16 Bergquist Co Metodo de preparacion de combinaciones conductoras de calor por medio de conglomerados de particulas rellenos de metal liquido.
US6339120B1 (en) * 2000-04-05 2002-01-15 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
GB2365816B (en) 2000-08-09 2002-11-13 Murata Manufacturing Co Method of bonding conductive adhesive and electrode,and bonded structure
JP4684439B2 (ja) 2001-03-06 2011-05-18 富士通株式会社 伝導性粒子、伝導性組成物および、電子機器の製造方法
US7524748B2 (en) * 2003-02-05 2009-04-28 Senju Metal Industry Co., Ltd. Method of interconnecting terminals and method of mounting semiconductor devices
WO2006073004A1 (ja) * 2005-01-06 2006-07-13 Shieldtechs, Inc. 防錆性および導電性に優れた樹脂組成物並びに樹脂組成物被覆部材
JP5034206B2 (ja) 2005-10-03 2012-09-26 株式会社デンソー 導電性接着剤
KR100781586B1 (ko) 2006-02-24 2007-12-05 삼성전기주식회사 코어-셀 구조의 금속 나노입자 및 이의 제조방법
WO2009110095A1 (ja) 2008-03-07 2009-09-11 富士通株式会社 導電材料、導電ペースト、回路基板、及び半導体装置
JP5018752B2 (ja) * 2008-11-27 2012-09-05 富士通株式会社 導電材料、及び導電材料の製造方法
WO2010113641A1 (ja) * 2009-03-31 2010-10-07 積水化学工業株式会社 導電性微粒子、異方性導電材料、及び、接続構造体
JP2010238615A (ja) * 2009-03-31 2010-10-21 Sekisui Chem Co Ltd 導電性微粒子、異方性導電材料、及び、接続構造体
DE102010028800A1 (de) * 2010-05-10 2011-11-10 Freie Universität Berlin Polymer-Zusammensetzungen auf Basis umweltfreundlicher pflanzlicher und/oder tierischer Öle als wärmeleitfähige Materialien
DE102010030063A1 (de) * 2010-06-15 2011-12-15 Robert Bosch Gmbh Elektrische Verbindungsanordnung
US8912047B2 (en) 2011-05-18 2014-12-16 Infineon Technologies Ag Method for producing a metal layer on a substrate and device
EP2557571B1 (en) * 2011-08-08 2014-07-02 Tyco Electronics Corporation Electrically conductive metal/plastic hybrid comprising a polymer material, a first metal and metal particles of a second metal embedded in the first metal and method of producing such
JP6024235B2 (ja) * 2011-08-30 2016-11-09 日立化成株式会社 接着剤組成物及び回路接続構造体
JP5252050B2 (ja) * 2011-09-09 2013-07-31 富士通株式会社 回路基板、及び回路基板の製造方法
TWI483320B (zh) * 2012-03-22 2015-05-01 Chipmos Technologies Inc 半導體封裝結構及其製作方法
JP5257539B2 (ja) * 2012-09-12 2013-08-07 富士通株式会社 回路基板の製造方法
JP5435095B2 (ja) * 2012-09-12 2014-03-05 富士通株式会社 回路基板、及び回路基板の製造方法
JP5257546B2 (ja) * 2012-10-23 2013-08-07 富士通株式会社 電子機器の製造方法
CN104558699B (zh) * 2015-01-06 2017-09-22 苏州大学 一种弹性导电胶体、制备方法及其应用
JP6622971B2 (ja) * 2015-02-24 2019-12-18 古河電気工業株式会社 加熱接合材料、接合構造体、並びに加熱接合材料の製造方法及び該加熱接合材料を用いた接合方法
CN105149714B (zh) * 2015-09-21 2017-07-18 上海交通大学 金属板无压痕胶焊连接方法
WO2018105127A1 (ja) * 2016-12-09 2018-06-14 日立化成株式会社 接合体の製造方法、遷移的液相焼結用組成物、焼結体及び接合体
JP7065576B2 (ja) * 2017-08-29 2022-05-12 積水化学工業株式会社 微粒子及び該微粒子を含む接続材料並びに接続構造体
CN107703662A (zh) * 2017-09-26 2018-02-16 惠科股份有限公司 显示基板及其制作方法
CN108346952B (zh) * 2018-01-25 2020-11-24 番禺得意精密电子工业有限公司 电连接器固持装置
CN110849511A (zh) * 2019-11-13 2020-02-28 苏州市东科电子有限公司 一种厚膜电容压力传感器引线针的安装方法
US11812562B2 (en) 2021-08-30 2023-11-07 International Business Machines Corporation Creating a standoff for a low-profile component without adding a process step

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800020A (en) * 1972-03-23 1974-03-26 Cramer P Co Method of making a circuit board
JPS5028829A (ko) * 1973-07-17 1975-03-24
GB1555476A (en) * 1976-08-26 1979-11-14 Standard Telephones Cables Ltd Metal coating method
US4290195A (en) * 1978-09-01 1981-09-22 Rippere Ralph E Methods and articles for making electrical circuit connections employing composition material
JPS57113505A (en) * 1981-01-07 1982-07-15 Matsushita Electric Ind Co Ltd Conductive composition
AU584580B2 (en) * 1982-09-08 1989-06-01 Smith Kline - Rit Hepatitis B virus vaccine
EP0265077A3 (en) * 1986-09-25 1989-03-08 Sheldahl, Inc. An anisotropic adhesive for bonding electrical components
US5376403A (en) * 1990-02-09 1994-12-27 Capote; Miguel A. Electrically conductive compositions and methods for the preparation and use thereof
JPH0528829A (ja) * 1991-07-12 1993-02-05 Tokyo Cosmos Electric Co Ltd 導電塗料及びその導電膜形成方法
US5286417A (en) * 1991-12-06 1994-02-15 International Business Machines Corporation Method and composition for making mechanical and electrical contact
JPH065116A (ja) * 1992-06-19 1994-01-14 Shin Etsu Polymer Co Ltd 低融点金属接合型異方導電膜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100313766B1 (ko) * 1999-12-30 2001-11-15 구자홍 전도성 입자의 제조방법 및 전도성 입자 구조
KR20030050333A (ko) * 2001-12-18 2003-06-25 태크뱅크 주식회사 전자 패키징 시간 단축용 엠디씨

Also Published As

Publication number Publication date
SG77619A1 (en) 2001-01-16
EP0708582A1 (en) 1996-04-24
MY118121A (en) 2004-09-30
CN1129339A (zh) 1996-08-21
TW340132B (en) 1998-09-11
KR100229581B1 (ko) 1999-11-15
JPH08227613A (ja) 1996-09-03
CN1084917C (zh) 2002-05-15
JP3454509B2 (ja) 2003-10-06
JP2002151170A (ja) 2002-05-24
CA2159234A1 (en) 1996-04-21

Similar Documents

Publication Publication Date Title
KR960016651A (ko) 전기 전도성 페이스트 재료 및 응용
US6108210A (en) Flip chip devices with flexible conductive adhesive
US5435732A (en) Flexible circuit member
US5203075A (en) Method of bonding flexible circuit to cicuitized substrate to provide electrical connection therebetween using different solders
JP4135565B2 (ja) 電子回路装置およびその製造方法
US5773884A (en) Electronic package with thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto
US10224149B2 (en) Bulk MLCC capacitor module
JPH1145618A (ja) 導電ペースト構造およびその製造方法
US9805872B2 (en) Multiple MLCC modules
CN102215639A (zh) 半导体芯片内置配线基板及其制造方法
CN1273694A (zh) 半导体装置及其制造方法、电路基板和电子装置
JP2001513946A (ja) 垂直相互接続電子集成体とこれに有用な組成物
KR950701396A (ko) 집적 회로 다이의 땜납 범핑(solder bumping of integrated circuit die)
JP2001044641A (ja) 半導体素子内蔵配線基板およびその製造方法
KR20090052300A (ko) 전자 부품 실장용 접착제 및 전자 부품 실장 구조체
US5360942A (en) Multi-chip electronic package module utilizing an adhesive sheet
US6259155B1 (en) Polymer enhanced column grid array
WO1999056509A9 (en) Flip chip devices with flexible conductive adhesive
JP2000243864A (ja) 半導体装置及びその製造方法、回路基板並びに電子機器
JP3552701B2 (ja) 接着部材、半導体装置及びその製造方法、回路基板並びに電子機器
JP3560996B2 (ja) 実装用配線板およびこれを用いた実装方法
US6649833B1 (en) Negative volume expansion lead-free electrical connection
JP2005159227A (ja) 回路部品内蔵モジュール及びその製造方法
JPH09260822A (ja) 基板への半田による電子部品接続固定構造
JPS60120588A (ja) 印刷配線板

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee