KR960009043A - 질화 규소의 에칭 방법 - Google Patents

질화 규소의 에칭 방법 Download PDF

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Publication number
KR960009043A
KR960009043A KR1019950024076A KR19950024076A KR960009043A KR 960009043 A KR960009043 A KR 960009043A KR 1019950024076 A KR1019950024076 A KR 1019950024076A KR 19950024076 A KR19950024076 A KR 19950024076A KR 960009043 A KR960009043 A KR 960009043A
Authority
KR
South Korea
Prior art keywords
silicon
bath
ashing
acid
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950024076A
Other languages
English (en)
Korean (ko)
Inventor
하워드 지거 데이빗
Original Assignee
알. 디. 로만
에이티앤드티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알. 디. 로만, 에이티앤드티 코포레이션 filed Critical 알. 디. 로만
Publication of KR960009043A publication Critical patent/KR960009043A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P50/00—
    • H10P50/283—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • H10P50/264—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Local Oxidation Of Silicon (AREA)
KR1019950024076A 1994-08-05 1995-08-04 질화 규소의 에칭 방법 Withdrawn KR960009043A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/286,606 1994-08-05
US08/286,606 US5472562A (en) 1994-08-05 1994-08-05 Method of etching silicon nitride

Publications (1)

Publication Number Publication Date
KR960009043A true KR960009043A (ko) 1996-03-22

Family

ID=23099353

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950024076A Withdrawn KR960009043A (ko) 1994-08-05 1995-08-04 질화 규소의 에칭 방법

Country Status (4)

Country Link
US (1) US5472562A (cg-RX-API-DMAC10.html)
JP (1) JPH0864574A (cg-RX-API-DMAC10.html)
KR (1) KR960009043A (cg-RX-API-DMAC10.html)
TW (1) TW287303B (cg-RX-API-DMAC10.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
KR100252212B1 (ko) * 1997-03-31 2000-04-15 윤종용 반도체장치 제조용 질화규소막의 식각조성물과이를 이용한 식각방법 및 그에 의하여 제조되는 반도체장치
US6287983B2 (en) * 1997-12-31 2001-09-11 Texas Instruments Incorporated Selective nitride etching with silicate ion pre-loading
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
US6162370A (en) * 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
WO2000052747A1 (en) * 1999-03-03 2000-09-08 Fsi International, Inc. Method and system to uniformly etch substrates using an etching composition comprising a fluoride ion source and a hydrogen ion source
US6699400B1 (en) * 1999-06-04 2004-03-02 Arne W. Ballantine Etch process and apparatus therefor
KR100327342B1 (ko) * 1999-10-27 2002-03-06 윤종용 반도체소자 제조용 식각조성물 및 이 식각조성물을 이용한 식각방법
JP4506177B2 (ja) * 2004-01-14 2010-07-21 東ソー株式会社 エッチング用組成物
US20050159011A1 (en) * 2004-01-21 2005-07-21 Thirumala Vani K. Selective etching silicon nitride
JP2007204286A (ja) * 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
JP5003047B2 (ja) * 2006-04-28 2012-08-15 東ソー株式会社 エッチング用組成物及びエッチング方法
JP5003057B2 (ja) * 2006-08-21 2012-08-15 東ソー株式会社 エッチング用組成物及びエッチング方法
JP5332197B2 (ja) * 2007-01-12 2013-11-06 東ソー株式会社 エッチング用組成物及びエッチング方法
KR20080079999A (ko) * 2007-02-28 2008-09-02 토소가부시키가이샤 에칭 방법 및 그것에 이용되는 에칭용 조성물
JP4983422B2 (ja) * 2007-06-14 2012-07-25 東ソー株式会社 エッチング用組成物及びエッチング方法
US8211810B2 (en) * 2007-09-21 2012-07-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
KR101809192B1 (ko) * 2011-12-16 2017-12-15 에스케이하이닉스 주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조방법
CN102888657B (zh) * 2012-10-22 2015-04-15 江苏荣马新能源有限公司 一种晶体硅太阳能电池片制绒剂用添加剂
JP2014099480A (ja) * 2012-11-13 2014-05-29 Fujifilm Corp 半導体基板のエッチング方法及び半導体素子の製造方法
KR102365046B1 (ko) 2012-12-18 2022-02-21 솔브레인 주식회사 식각 조성물, 식각 방법 및 반도체 소자
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
US9287228B2 (en) 2014-06-26 2016-03-15 Lam Research Ag Method for etching semiconductor structures and etching composition for use in such a method
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US11186771B2 (en) 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
JP6735718B2 (ja) * 2017-09-28 2020-08-05 東京エレクトロン株式会社 基板処理装置、基板処理方法およびプログラム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348617A (en) * 1991-12-23 1994-09-20 Iowa State University Research Foundation, Inc. Selective etching process
US5310457A (en) * 1992-09-30 1994-05-10 At&T Bell Laboratories Method of integrated circuit fabrication including selective etching of silicon and silicon compounds

Also Published As

Publication number Publication date
US5472562A (en) 1995-12-05
JPH0864574A (ja) 1996-03-08
TW287303B (cg-RX-API-DMAC10.html) 1996-10-01

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000