KR960030451A - 확산마스크 및 그것을 이용한 pn접합소자의 제조방법 - Google Patents

확산마스크 및 그것을 이용한 pn접합소자의 제조방법 Download PDF

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Publication number
KR960030451A
KR960030451A KR1019960000117A KR19960000117A KR960030451A KR 960030451 A KR960030451 A KR 960030451A KR 1019960000117 A KR1019960000117 A KR 1019960000117A KR 19960000117 A KR19960000117 A KR 19960000117A KR 960030451 A KR960030451 A KR 960030451A
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diffusion
mask
diffusion mask
source
ain
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KR1019960000117A
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KR100417988B1 (ko
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미쓰히꼬 오기하라
유끼오 나까무라
마스미 코이즈미
마스미 타니나까
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사와무라 시코
오끼뎅끼 고오교오 가부시끼가이샤
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Publication of KR100417988B1 publication Critical patent/KR100417988B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

HF계 에찬트에 대해서 내식성을 가지는 확산마스크를 제공한다.
n-GaAS기판 10의 겉쪽의 주면 10a위에 차례로, AIN 확산마스크 18, 확산원 20 및 AIN 애닐캡 22를 형성한다.
확산원 20은 ZnO 및 SiO2의 혼합막이다.
또 기판 안쪽의 주면 10b위에 AIN 애닐캡 24를 형성한다.
그런 후에 고상확산에 의해 Zn확산영역을 26을 형성한다.
이어서 열인산에 의해, 애닐캡 22,24를 제거하고, 또 HF 또는 버퍼드 HF에 의해 확산원 20을 제거한다.
확산마스크 18은 HF 혹은 버퍼드 HF에 대해서 내식성을 가지기 때문에, 확산원 20을 에칭해도, 확산마스크 18의 확산창 16이 넓어진다든지, 혹은 확산마스크 18에 구멍이 생긴다든지 하지 않는다.
이 때문에 확산마스크 18을 층간절연기능을 손상하는일 없이 확산원 20을 에칭제거할 수 있다.

Description

확산마스크 및 그것을 이용한 pn접합소자의 제조방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 실시예의 설명에 관한 제조공정도이다.

Claims (2)

  1. 화합물반도체에 불순물을 선택적으로 확산시키기 위한 확산 마스트를 AIN막으로써 구성하는 것을 특징으로 하는 확산마스크.
  2. 화합물반도체위에 청구항 1기재의 확산마스크를 형성하는 공정과, 상기 확산마스크위에 확산원막을 형성하는 공정과, 고상확산법에 의해 상기 화합물반도체에 불순물을 확산시키는 공정과 불순물확산의 종료 후, 확산원막을 HF계 에찬트를 이용해서 에칭제거하는 공정을 포함해서 구성하는 것을 특징으로 하는 pn접합소자의 제조방법
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000117A 1995-01-19 1996-01-05 확산마스크를이용한pn접합소자의제조방법 KR100417988B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP95-6139 1995-01-19
JP95-006139 1995-01-19
JP613995A JP3157690B2 (ja) 1995-01-19 1995-01-19 ｐｎ接合素子の製造方法

Publications (2)

Publication Number Publication Date
KR960030451A true KR960030451A (ko) 1996-08-17
KR100417988B1 KR100417988B1 (ko) 2004-05-20

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Country Status (5)

Country Link
US (1) US5700714A (ko)
EP (1) EP0723285B1 (ko)
JP (1) JP3157690B2 (ko)
KR (1) KR100417988B1 (ko)
DE (1) DE69525922T2 (ko)

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Also Published As

Publication number Publication date
DE69525922D1 (de) 2002-04-25
EP0723285A3 (en) 1997-04-02
EP0723285B1 (en) 2002-03-20
JP3157690B2 (ja) 2001-04-16
DE69525922T2 (de) 2002-11-07
JPH08195506A (ja) 1996-07-30
EP0723285A2 (en) 1996-07-24
US5700714A (en) 1997-12-23
KR100417988B1 (ko) 2004-05-20

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