DE69525922D1 - Herstellung eines elektrischen Bauteils - Google Patents

Herstellung eines elektrischen Bauteils

Info

Publication number
DE69525922D1
DE69525922D1 DE69525922T DE69525922T DE69525922D1 DE 69525922 D1 DE69525922 D1 DE 69525922D1 DE 69525922 T DE69525922 T DE 69525922T DE 69525922 T DE69525922 T DE 69525922T DE 69525922 D1 DE69525922 D1 DE 69525922D1
Authority
DE
Germany
Prior art keywords
manufacture
electrical component
electrical
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525922T
Other languages
English (en)
Other versions
DE69525922T2 (de
Inventor
Mitsuhiko Ogihara
Yukio Nakamura
Masumi Koizumi
Masumi Taninaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of DE69525922D1 publication Critical patent/DE69525922D1/de
Application granted granted Critical
Publication of DE69525922T2 publication Critical patent/DE69525922T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
DE69525922T 1995-01-19 1995-12-13 Herstellung eines elektrischen Bauteils Expired - Lifetime DE69525922T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP613995A JP3157690B2 (ja) 1995-01-19 1995-01-19 ｐｎ接合素子の製造方法

Publications (2)

Publication Number Publication Date
DE69525922D1 true DE69525922D1 (de) 2002-04-25
DE69525922T2 DE69525922T2 (de) 2002-11-07

Family

ID=11630184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525922T Expired - Lifetime DE69525922T2 (de) 1995-01-19 1995-12-13 Herstellung eines elektrischen Bauteils

Country Status (5)

Country Link
US (1) US5700714A (de)
EP (1) EP0723285B1 (de)
JP (1) JP3157690B2 (de)
KR (1) KR100417988B1 (de)
DE (1) DE69525922T2 (de)

Families Citing this family (40)

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US5821567A (en) * 1995-12-13 1998-10-13 Oki Electric Industry Co., Ltd. High-resolution light-sensing and light-emitting diode array
US5955747A (en) * 1996-07-25 1999-09-21 Oki Electric Industry Co., Ltd. High-density light-emitting-diode array utilizing a plurality of isolation channels
JP3268731B2 (ja) * 1996-10-09 2002-03-25 沖電気工業株式会社 光電変換素子
JPH10290025A (ja) * 1997-04-15 1998-10-27 Oki Electric Ind Co Ltd Ｌｅｄアレイ
JP3181262B2 (ja) * 1998-06-04 2001-07-03 スタンレー電気株式会社 平面実装型ｌｅｄ素子およびその製造方法
JP2000332248A (ja) * 1999-05-14 2000-11-30 Internatl Business Mach Corp <Ibm> 薄膜トランジスタおよびその製造方法
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
DE10041689A1 (de) * 2000-08-24 2002-03-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von dotiertem Halbleitermaterial
US7001057B2 (en) * 2001-05-23 2006-02-21 Ivoclar Vivadent A.G. Lighting apparatus for guiding light onto a light polymerizable piece to effect hardening thereof
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US7084441B2 (en) 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
DE102004026231B4 (de) 2004-05-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bereichs mit reduzierter elektrischer Leitfähigkeit innerhalb einer Halbleiterschicht und optoelektronisches Halbleiterbauelement
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7465967B2 (en) 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
DE102007020888A1 (de) * 2007-05-04 2008-11-06 Micro Systems Engineering Gmbh & Co. Kg Keramisches Substratmaterial, Verfahren zur Herstellung und Verwendung desselben sowie Antenne oder Antennenarray
US8030188B2 (en) * 2008-12-05 2011-10-04 Electronics And Telecommunications Research Institute Methods of forming a compound semiconductor device including a diffusion region
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
JP6477396B2 (ja) * 2015-09-30 2019-03-06 豊田合成株式会社 窒化物半導体装置の製造方法
WO2019010488A1 (en) * 2017-07-07 2019-01-10 Thin Film Electronics Asa LOW TEMPERATURE DOPANT ACTIVATION PROCESS USING COVER LAYER, AND MOS DEVICES INCLUDING THE COVER LAYER
CN113053736B (zh) * 2021-03-11 2024-05-03 捷捷半导体有限公司 一种半导体器件制作方法

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Publication number Priority date Publication date Assignee Title
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4058413A (en) * 1976-05-13 1977-11-15 The United States Of America As Represented By The Secretary Of The Air Force Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
US4149307A (en) * 1977-12-28 1979-04-17 Hughes Aircraft Company Process for fabricating insulated-gate field-effect transistors with self-aligned contacts
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
JPS5999717A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
JPS6216573A (ja) * 1985-07-15 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6298721A (ja) * 1985-10-25 1987-05-08 Furukawa Electric Co Ltd:The ３−Ｖ族化合物半導体へのＺｎ固相拡散方法
JPS62139320A (ja) * 1985-12-13 1987-06-23 Furukawa Electric Co Ltd:The 化合物半導体への選択固相拡散方法
US5523590A (en) * 1993-10-20 1996-06-04 Oki Electric Industry Co., Ltd. LED array with insulating films
JP2857305B2 (ja) * 1993-10-20 1999-02-17 沖電気工業株式会社 Ｌｅｄアレイおよびその製造方法
JP3241929B2 (ja) * 1994-05-27 2001-12-25 沖電気工業株式会社 受発光ダイオード

Also Published As

Publication number Publication date
KR960030451A (ko) 1996-08-17
KR100417988B1 (ko) 2004-05-20
JP3157690B2 (ja) 2001-04-16
EP0723285B1 (de) 2002-03-20
US5700714A (en) 1997-12-23
JPH08195506A (ja) 1996-07-30
EP0723285A2 (de) 1996-07-24
EP0723285A3 (de) 1997-04-02
DE69525922T2 (de) 2002-11-07

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