KR960008971A - 반도체 처리장치 및 반도체 처리장치의 클리닝방법 - Google Patents

반도체 처리장치 및 반도체 처리장치의 클리닝방법 Download PDF

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KR960008971A
KR960008971A KR1019950025954A KR19950025954A KR960008971A KR 960008971 A KR960008971 A KR 960008971A KR 1019950025954 A KR1019950025954 A KR 1019950025954A KR 19950025954 A KR19950025954 A KR 19950025954A KR 960008971 A KR960008971 A KR 960008971A
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plasma
reaction chamber
valve
semiconductor processing
high vacuum
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가쓰신 미야기
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이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
요시다 미쓰다카
도오교오 에레구토론 도오호쿠 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Vapour Deposition (AREA)
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Abstract

ECR 플라즈마 CVD장치는, 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실을 구비한다. 플라즈마 생성실을 둘러싸며, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드가 배치되어 있다. 또, 반응성가스가 도입되는 플라즈마 반응실이 플라즈마 생성실과 서로 연이어 통하게 설치되어 있다. 실리콘웨이퍼를 유지하는 기판홀더가 플라즈마 반응실 내에 설치되어 있다. 플라즈마 반응실과 연이어 통하며 열림도가 자유롭게 콘트롤 가능한 누설식 밸브의 버터플라이밸브가 설치되어 있다. 버터플라이밸브의 후단에는 터보분자펌프가 설치되어 있다. 터보분자펌프의 후단에는 조절 밸브를 통해서 서브펌프가 설치되어 있다.

Description

반도체 처리장치 및 반도체 처리장치의 클리닝방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 ECR플라즈마 CVD장치의 한 예를 도시하는 개략도.
제3도는 제2도에 도시하는 ECR플라즈마 CVD장치의 버터플라이밸브를 도시하는 단면도이다.

Claims (13)

  1. 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실과, 플라즈마 생성실을 둘러싸고, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드와, 플라즈마 생성실과 서로 연이어 통하도록 설치되고, 또한 반응성 가스가 도입되는 플라즈마 반응실과, 플라즈마 반응실내에 설치되고, 피처리물을 유지하는 유지수단과, 플라즈마 반응실과 연이어 통하도록 설치된, 개방도가 자유롭게 제어 가능한 누설식 밸브와, 누설식 밸브의 후단에 연결된 고진공펌프와, 플라스마 반응실에 클리닝가스를 공급하는 클리닝가스 공급수단 및, 고진공펌프의 후단에 연결된 서브펌프를 포함하여 구성되는 ECR 플라즈마 CVD용 반도체 처리장치.
  2. 제1항에 있어서, 고진공 펌프는 l000∼3000 l/sec의 배기량 및, 10-6∼10-8mTorr의 진공도달압을 가지는 반도체 처리장치.
  3. 제2항에 있어서, 고진공펌프는 터보분자펌프인 반도체 처리장치.
  4. 제1항에 있어서, 서브펌프가 20∼80 l/Sec의 배기량 및, 1∼5 mTorr의 진공도달압을 가지는 반도체 처리 장치.
  5. 제4항에 있어서, 서브펌프가 드라이펌프인 반도체 처리장치.
  6. 제1항에 있어서, 누설식 밸브가 버터플라이밸브인 반도체 처리장치.
  7. 제6항에 있어서, 버터플라이밸브의 플랩퍼가, 수평을 기준으로 하여 실질적으로 180°회전이 가능한 반도체 처리장치.
  8. 제1항에 있어서, 누설식 밸브 및 고진공펌프가 각각 2쌍 설치되고, 또한 2쌍의 누설식 밸브 및 고진공펌프가 플라즈마 반응실의 중심을 중심축으로 하여 대칭인 위치에 배치되어 있는 반도체 처리장치.
  9. 제1항에 있어서, 고진공펌프 및 서브펌프의 사이에 배치되는 조절밸브를 더욱 포함하는 반도체 처리장치.
  10. 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실과, 플라즈마 생성실을 둘러싸며, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드와, 플라즈마 생성실과 서로 연이어 통하게 설치되고, 또한 반응성가스가 도입되는 플라즈마 반응실과, 플라즈마 반응실 내에 설치되고, 피처리물을 유지하는 유지수단과, 플라즈마 반응실과 연이어 통하도록 설치되고, 개방도가 자유롭게 제어가능한 누설식 밸브와, 누설시 밸브의 후단에 연결된 고진공 펌프 및 고진공펌프의 후단에 연결된 서브펌프를 구비하는 ECR 플라즈마 CVD용 반도체 처리장치의 클리닝방법으로서, 고진공펌프 및 서브펌프가 작동한 상태에서, 누설식 밸브를 닫은 상태로 하고, 플라즈마 반응실 내를 저진공 분위기로 설정하는 공정 및, 저진공 분위기의 플라즈마 반응실 내에 클리닝가스를 공급하고, 플라즈마를 발생시켜서 플라즈마 반응실 및 누설 밸브에 퇴적된 피막을 제거하는 공정으로 구성되는 것을 특징으로 하는 방법.
  11. 제10항에 있어서, 저진공 분위기가 0.1∼2 Torr의 범위 내에 있는 방법.
  12. 제10항에 있어서, 누설식 밸브가 버터플라이밸브인 방법.
  13. 제12항에 있어서, 버터플라이밸브의 플랩퍼가, 수평을 기준으로 하여 실질적으로 180°회전이 가능하며, 필요에 따라서 플랩퍼의 한쪽면을 플라즈마 반응실 방향으로 향하게 하여 버터플라이밸브를 닫은 상태로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950025954A 1994-08-22 1995-08-22 플라즈마처리장치및플라즈마처리장치의프라즈마클리닝방법 KR100316300B1 (ko)

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JP94-196535 1994-08-22
JP06196535A JP3107275B2 (ja) 1994-08-22 1994-08-22 半導体製造装置及び半導体製造装置のクリーニング方法

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KR100316300B1 KR100316300B1 (ko) 2002-04-24

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