KR960008971A - 반도체 처리장치 및 반도체 처리장치의 클리닝방법 - Google Patents
반도체 처리장치 및 반도체 처리장치의 클리닝방법 Download PDFInfo
- Publication number
- KR960008971A KR960008971A KR1019950025954A KR19950025954A KR960008971A KR 960008971 A KR960008971 A KR 960008971A KR 1019950025954 A KR1019950025954 A KR 1019950025954A KR 19950025954 A KR19950025954 A KR 19950025954A KR 960008971 A KR960008971 A KR 960008971A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma
- reaction chamber
- valve
- semiconductor processing
- high vacuum
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
ECR 플라즈마 CVD장치는, 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실을 구비한다. 플라즈마 생성실을 둘러싸며, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드가 배치되어 있다. 또, 반응성가스가 도입되는 플라즈마 반응실이 플라즈마 생성실과 서로 연이어 통하게 설치되어 있다. 실리콘웨이퍼를 유지하는 기판홀더가 플라즈마 반응실 내에 설치되어 있다. 플라즈마 반응실과 연이어 통하며 열림도가 자유롭게 콘트롤 가능한 누설식 밸브의 버터플라이밸브가 설치되어 있다. 버터플라이밸브의 후단에는 터보분자펌프가 설치되어 있다. 터보분자펌프의 후단에는 조절 밸브를 통해서 서브펌프가 설치되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 ECR플라즈마 CVD장치의 한 예를 도시하는 개략도.
제3도는 제2도에 도시하는 ECR플라즈마 CVD장치의 버터플라이밸브를 도시하는 단면도이다.
Claims (13)
- 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실과, 플라즈마 생성실을 둘러싸고, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드와, 플라즈마 생성실과 서로 연이어 통하도록 설치되고, 또한 반응성 가스가 도입되는 플라즈마 반응실과, 플라즈마 반응실내에 설치되고, 피처리물을 유지하는 유지수단과, 플라즈마 반응실과 연이어 통하도록 설치된, 개방도가 자유롭게 제어 가능한 누설식 밸브와, 누설식 밸브의 후단에 연결된 고진공펌프와, 플라스마 반응실에 클리닝가스를 공급하는 클리닝가스 공급수단 및, 고진공펌프의 후단에 연결된 서브펌프를 포함하여 구성되는 ECR 플라즈마 CVD용 반도체 처리장치.
- 제1항에 있어서, 고진공 펌프는 l000∼3000 l/sec의 배기량 및, 10-6∼10-8mTorr의 진공도달압을 가지는 반도체 처리장치.
- 제2항에 있어서, 고진공펌프는 터보분자펌프인 반도체 처리장치.
- 제1항에 있어서, 서브펌프가 20∼80 l/Sec의 배기량 및, 1∼5 mTorr의 진공도달압을 가지는 반도체 처리 장치.
- 제4항에 있어서, 서브펌프가 드라이펌프인 반도체 처리장치.
- 제1항에 있어서, 누설식 밸브가 버터플라이밸브인 반도체 처리장치.
- 제6항에 있어서, 버터플라이밸브의 플랩퍼가, 수평을 기준으로 하여 실질적으로 180°회전이 가능한 반도체 처리장치.
- 제1항에 있어서, 누설식 밸브 및 고진공펌프가 각각 2쌍 설치되고, 또한 2쌍의 누설식 밸브 및 고진공펌프가 플라즈마 반응실의 중심을 중심축으로 하여 대칭인 위치에 배치되어 있는 반도체 처리장치.
- 제1항에 있어서, 고진공펌프 및 서브펌프의 사이에 배치되는 조절밸브를 더욱 포함하는 반도체 처리장치.
- 마이크로파 및 플라즈마 원료가스가 도입되는 플라즈마 생성실과, 플라즈마 생성실을 둘러싸며, 또한 플라즈마 생성실 내에 마이크로파와의 전자 사이클로트론 공명자계를 형성하는 여자 솔레노이드와, 플라즈마 생성실과 서로 연이어 통하게 설치되고, 또한 반응성가스가 도입되는 플라즈마 반응실과, 플라즈마 반응실 내에 설치되고, 피처리물을 유지하는 유지수단과, 플라즈마 반응실과 연이어 통하도록 설치되고, 개방도가 자유롭게 제어가능한 누설식 밸브와, 누설시 밸브의 후단에 연결된 고진공 펌프 및 고진공펌프의 후단에 연결된 서브펌프를 구비하는 ECR 플라즈마 CVD용 반도체 처리장치의 클리닝방법으로서, 고진공펌프 및 서브펌프가 작동한 상태에서, 누설식 밸브를 닫은 상태로 하고, 플라즈마 반응실 내를 저진공 분위기로 설정하는 공정 및, 저진공 분위기의 플라즈마 반응실 내에 클리닝가스를 공급하고, 플라즈마를 발생시켜서 플라즈마 반응실 및 누설 밸브에 퇴적된 피막을 제거하는 공정으로 구성되는 것을 특징으로 하는 방법.
- 제10항에 있어서, 저진공 분위기가 0.1∼2 Torr의 범위 내에 있는 방법.
- 제10항에 있어서, 누설식 밸브가 버터플라이밸브인 방법.
- 제12항에 있어서, 버터플라이밸브의 플랩퍼가, 수평을 기준으로 하여 실질적으로 180°회전이 가능하며, 필요에 따라서 플랩퍼의 한쪽면을 플라즈마 반응실 방향으로 향하게 하여 버터플라이밸브를 닫은 상태로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP94-196535 | 1994-08-22 | ||
JP06196535A JP3107275B2 (ja) | 1994-08-22 | 1994-08-22 | 半導体製造装置及び半導体製造装置のクリーニング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960008971A true KR960008971A (ko) | 1996-03-22 |
KR100316300B1 KR100316300B1 (ko) | 2002-04-24 |
Family
ID=16359362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950025954A KR100316300B1 (ko) | 1994-08-22 | 1995-08-22 | 플라즈마처리장치및플라즈마처리장치의프라즈마클리닝방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5611863A (ko) |
JP (1) | JP3107275B2 (ko) |
KR (1) | KR100316300B1 (ko) |
TW (1) | TW353763B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101586237B1 (ko) * | 2015-07-24 | 2016-01-19 | 주식회사 애니테이프 | 대기압 플라즈마를 이용한 압출성형재의 윤활유 제거 장치 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5901751A (en) * | 1996-03-08 | 1999-05-11 | Applied Materials, Inc. | Restrictor shield having a variable effective throughout area |
US6248206B1 (en) * | 1996-10-01 | 2001-06-19 | Applied Materials Inc. | Apparatus for sidewall profile control during an etch process |
WO1998033362A1 (fr) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Dispositif a plasma |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
JP3563565B2 (ja) * | 1997-06-09 | 2004-09-08 | 東京エレクトロン株式会社 | 排気装置および排気方法 |
US6274058B1 (en) | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
US8075789B1 (en) | 1997-07-11 | 2011-12-13 | Applied Materials, Inc. | Remote plasma cleaning source having reduced reactivity with a substrate processing chamber |
US6259105B1 (en) * | 1999-05-10 | 2001-07-10 | Axcelis Technologies, Inc. | System and method for cleaning silicon-coated surfaces in an ion implanter |
US6596123B1 (en) * | 2000-01-28 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for cleaning a semiconductor wafer processing system |
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
JP3989205B2 (ja) * | 2000-08-31 | 2007-10-10 | 松下電器産業株式会社 | Cvd膜の形成方法 |
US6461972B1 (en) * | 2000-12-22 | 2002-10-08 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
US6893506B2 (en) * | 2002-03-11 | 2005-05-17 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
GB0214273D0 (en) * | 2002-06-20 | 2002-07-31 | Boc Group Plc | Apparatus for controlling the pressure in a process chamber and method of operating same |
CN100390317C (zh) * | 2002-07-10 | 2008-05-28 | 东京毅力科创株式会社 | 成膜装置 |
CN1671884A (zh) * | 2002-07-31 | 2005-09-21 | 东京毅力科创株式会社 | 小体积、高流导的处理室 |
US6843264B2 (en) * | 2002-12-18 | 2005-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-phase pressure control valve for process chamber |
GB0401484D0 (en) * | 2004-01-23 | 2004-02-25 | Boc Group Plc | Screw pump |
US7428915B2 (en) * | 2005-04-26 | 2008-09-30 | Applied Materials, Inc. | O-ringless tandem throttle valve for a plasma reactor chamber |
JP4870536B2 (ja) * | 2006-12-06 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP2008166062A (ja) * | 2006-12-27 | 2008-07-17 | Hitachi High-Technologies Corp | 真空容器を持つ装置 |
WO2010024036A1 (ja) * | 2008-08-28 | 2010-03-04 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置のクリーニング方法 |
FR2965888B1 (fr) * | 2010-10-08 | 2012-12-28 | Alcatel Lucent | Canalisation d'evacuation de gaz et procede d'evacuation associe |
US9418880B2 (en) * | 2011-06-30 | 2016-08-16 | Semes Co., Ltd. | Apparatuses and methods for treating substrate |
US20130239889A1 (en) * | 2012-03-14 | 2013-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Valve purge assembly for semiconductor manufacturing tools |
US9314824B2 (en) * | 2013-11-08 | 2016-04-19 | Mks Instruments, Inc. | Powder and deposition control in throttle valves |
CN104701121B (zh) * | 2013-12-04 | 2017-01-04 | 中微半导体设备(上海)有限公司 | 设有可提高对称性的导气装置的泵以及等离子处理装置 |
US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
JP6744181B2 (ja) | 2016-09-26 | 2020-08-19 | 株式会社ニューフレアテクノロジー | 成膜装置及び成膜方法 |
US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
WO2019067885A1 (en) * | 2017-09-29 | 2019-04-04 | Applied Materials, Inc. | DUAL CHANNEL ISOLATION VALVE FOR REMOTE PLASMA CLEANING |
WO2021059989A1 (ja) * | 2019-09-25 | 2021-04-01 | 芝浦機械株式会社 | 流量調整バルブ、ポンプユニット及び表面処理装置 |
WO2024057588A1 (ja) * | 2022-09-14 | 2024-03-21 | 株式会社Kokusai Electric | 基板処理装置、排気システム及び半導体装置の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5987134U (ja) * | 1982-12-03 | 1984-06-13 | 株式会社日立製作所 | 半導体製造装置 |
JPS60176544U (ja) * | 1984-04-28 | 1985-11-22 | 沖電気工業株式会社 | 薄膜形成装置 |
JPS6179747A (ja) * | 1984-09-28 | 1986-04-23 | Santoku Kinzoku Kogyo Kk | 永久磁石合金 |
JPS61101029A (ja) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | 塗布装置 |
JPS61174623A (ja) * | 1985-01-29 | 1986-08-06 | Toshiba Corp | 試料処理装置 |
US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JPS63205914A (ja) * | 1987-02-23 | 1988-08-25 | Hitachi Ltd | 半導体製造装置 |
JPS63210275A (ja) * | 1987-02-24 | 1988-08-31 | Semiconductor Energy Lab Co Ltd | プラズマ反応装置内を清浄にする方法 |
JPH01161836A (ja) * | 1987-12-18 | 1989-06-26 | Nec Corp | 真空処理装置 |
KR920003431B1 (ko) * | 1988-02-05 | 1992-05-01 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 플라즈마 처리 방법 및 장치 |
JPH0252428A (ja) * | 1988-08-16 | 1990-02-22 | Tokyo Electron Ltd | 処理装置 |
JPH0294522A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | ドライエッチング方法 |
JPH03245526A (ja) * | 1990-02-22 | 1991-11-01 | Mitsubishi Electric Corp | プラズマ処理装置 |
JPH0533138A (ja) * | 1991-07-30 | 1993-02-09 | Fuji Electric Co Ltd | 酸化膜の製造方法 |
JP3042127B2 (ja) * | 1991-09-02 | 2000-05-15 | 富士電機株式会社 | 酸化シリコン膜の製造方法および製造装置 |
US5368685A (en) * | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
-
1994
- 1994-08-22 JP JP06196535A patent/JP3107275B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-21 US US08/517,286 patent/US5611863A/en not_active Expired - Fee Related
- 1995-08-22 TW TW084108765A patent/TW353763B/zh active
- 1995-08-22 KR KR1019950025954A patent/KR100316300B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101586237B1 (ko) * | 2015-07-24 | 2016-01-19 | 주식회사 애니테이프 | 대기압 플라즈마를 이용한 압출성형재의 윤활유 제거 장치 |
Also Published As
Publication number | Publication date |
---|---|
JP3107275B2 (ja) | 2000-11-06 |
KR100316300B1 (ko) | 2002-04-24 |
TW353763B (en) | 1999-03-01 |
US5611863A (en) | 1997-03-18 |
JPH0864578A (ja) | 1996-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960008971A (ko) | 반도체 처리장치 및 반도체 처리장치의 클리닝방법 | |
JPH0874737A (ja) | 処理装置の真空排気システム | |
US20100294431A1 (en) | Equipment for producing semiconductors, corresponding pumping device and substrate holder | |
KR102452714B1 (ko) | 고압 및 진공공정 병행 챔버장치 | |
TWI608119B (zh) | 原子層沉積設備及其抽氣速率控制方法 | |
CN115206824A (zh) | 一种可控制多进气管路组合进气装置及刻蚀方法 | |
JP2001070781A (ja) | 真空処理装置 | |
CN220556057U (zh) | 一种远程等离子体发生装置的截断阀和半导体设备 | |
TWI837594B (zh) | 電漿處理裝置 | |
KR100951353B1 (ko) | 액정 표시 장치용 처리 시스템 | |
TWI841890B (zh) | 處理基板之設備 | |
KR20000003211A (ko) | 로드 락 챔버의 가스 공급 시스템 | |
KR100219799B1 (ko) | 반도체 이온주입설비의 고진공 유지장치 | |
KR20050053851A (ko) | 액정 표시 장치용 처리 시스템 | |
JPH1199327A (ja) | 真空処理装置 | |
KR20020065335A (ko) | 반도체 제조 장치 | |
KR100227830B1 (ko) | 반도체 공정챔버용 진공시스템 및 이를 이용한가스공급방법 | |
JPH06310469A (ja) | ガス供給装置およびそれを用いたガス供給方法 | |
KR20060003126A (ko) | 터보펌프를 갖는 반도체 제조설비 | |
KR19980083833A (ko) | 게이트 밸브를 포함하는 반도체 제조장치 | |
JPS6325921A (ja) | 真空排気装置 | |
KR20070078139A (ko) | 반도체 소자 제조용 진공설비 | |
JPH0633241A (ja) | 気体導入装置 | |
KR19980015805U (ko) | 반도체 공정챔버의 진공장치 | |
KR20010107138A (ko) | 화학 기상 증착 장비 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20111028 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20121114 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |