KR950034553A - 플라즈마 에칭방법 - Google Patents

플라즈마 에칭방법 Download PDF

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Publication number
KR950034553A
KR950034553A KR1019950012507A KR19950012507A KR950034553A KR 950034553 A KR950034553 A KR 950034553A KR 1019950012507 A KR1019950012507 A KR 1019950012507A KR 19950012507 A KR19950012507 A KR 19950012507A KR 950034553 A KR950034553 A KR 950034553A
Authority
KR
South Korea
Prior art keywords
plasma
plasma etching
chlorine gas
etching method
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950012507A
Other languages
English (en)
Korean (ko)
Inventor
요시후미 오가와
히사오 야스나미
가즈노리 쯔지모또
마꼬또 나와타
데쯔노리 기지
Original Assignee
가나이 쯔도무
가부시끼 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쯔도무, 가부시끼 가이샤 히다찌 세이사꾸쇼 filed Critical 가나이 쯔도무
Publication of KR950034553A publication Critical patent/KR950034553A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019950012507A 1994-05-20 1995-05-19 플라즈마 에칭방법 Withdrawn KR950034553A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-106447 1994-05-20
JP6106447A JP2871460B2 (ja) 1994-05-20 1994-05-20 シリコンのエッチング方法

Publications (1)

Publication Number Publication Date
KR950034553A true KR950034553A (ko) 1995-12-28

Family

ID=14433877

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012507A Withdrawn KR950034553A (ko) 1994-05-20 1995-05-19 플라즈마 에칭방법

Country Status (4)

Country Link
EP (1) EP0683510A1 (enExample)
JP (1) JP2871460B2 (enExample)
KR (1) KR950034553A (enExample)
TW (1) TW275704B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239442B1 (ko) * 1996-12-26 2000-01-15 김영환 콘택홀 내의 전도성 플로그 형성방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102109884B1 (ko) * 2018-05-17 2020-05-12 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799991A (en) * 1987-11-02 1989-01-24 Motorola, Inc. Process for preferentially etching polycrystalline silicon
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
JPH0294520A (ja) 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH0779102B2 (ja) 1990-08-23 1995-08-23 富士通株式会社 半導体装置の製造方法
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
DE69230322T2 (de) * 1991-04-04 2000-07-06 Hitachi, Ltd. Verfahren und Vorrichtung zur Plasmabehandlung
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239442B1 (ko) * 1996-12-26 2000-01-15 김영환 콘택홀 내의 전도성 플로그 형성방법

Also Published As

Publication number Publication date
JP2871460B2 (ja) 1999-03-17
EP0683510A1 (en) 1995-11-22
TW275704B (enExample) 1996-05-11
JPH07321092A (ja) 1995-12-08

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000