KR950012683A - 반도체장치의 소자 분리 방법 - Google Patents

반도체장치의 소자 분리 방법 Download PDF

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Publication number
KR950012683A
KR950012683A KR1019930022236A KR930022236A KR950012683A KR 950012683 A KR950012683 A KR 950012683A KR 1019930022236 A KR1019930022236 A KR 1019930022236A KR 930022236 A KR930022236 A KR 930022236A KR 950012683 A KR950012683 A KR 950012683A
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KR
South Korea
Prior art keywords
film
forming
oxide film
opening
antioxidant
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KR1019930022236A
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English (en)
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KR970003893B1 (ko
Inventor
조현진
양홍모
신윤승
권오현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930022236A priority Critical patent/KR970003893B1/ko
Priority to US08/268,948 priority patent/US5447885A/en
Priority to DE4422957A priority patent/DE4422957B4/de
Priority to JP16214294A priority patent/JP3521963B2/ja
Publication of KR950012683A publication Critical patent/KR950012683A/ko
Application granted granted Critical
Publication of KR970003893B1 publication Critical patent/KR970003893B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

반도체장치의 소자 분리 방법이 개시되어 있다. 반도체기판 상에 부분적 열산화막을 형성하는 방법에 있어서, 상기 반도체기판 상에 제 1산화막 및 실리콘막을 차례로 형성한 후. 상기 실리콘 막 상에 산차방지막을 형성하고, 상기 결과물을 질소 분위기에서 고온 열처리한다 이어서, 상기 산화방지막의 소정부위를 식각하여 개구부를 형성하고, 상기 개구부에 열산화를 실시하여 열산화막을 형성한 다음, 상기 산화방지막을 제거한다.
산화방지막과 실리콘막 사이의 상부 버즈비크의 생성을 근본적으로 억제하여, 안정된 분리 특성을 확보할 수 있다.

Description

반도체장치의 소자 분리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 제조된 소자 분리 영역을 나타내는 단면도,
제4도 내지 제7도는 본 발명에 의한 소자 분리 방법을 설명하기 위한 단면도들.

Claims (3)

  1. 반도체기판 상에 부분적 열산화막을 형성하는 방법에 있어서, 상기 반도체기판 상에 제 1산화막을 형성하는 단계 , 상기 제 1산화막 상에 실리콘막을 형성하는 단계 상기 실리콘막 상에 산화방지막을 형성하는 단계 ; 상기 결과물을 질소 분위기에서 고온 열처리하는 단계 , 상기 산화방지막의 소정부위를 식각하여 개구부를 형성하는 단계 ; 상기 개구부에 열산화를 실시하여 열산화막을 형성하는 단계 ; 및 상기 산화방지막을 제거하는 단계를 포함하는 것을 특징으로 하는 반도체장치의 소자 분리방법.
  2. 제1항에 있어서, 상기 질소 분위기에서 고온 열처리하는 단계를 상기 산화방지막에 개구부를 형성하는 단계 후에 실시하는 것을 특징으로 하는 반도체장치의 소자 분리 방법.
  3. 제1항에 있어서, 상기 산화방지막을 형성하는 단계 후, 결과물 전면에 질소이온을 주입하여 상기 실리콘막과 산화방지막의 결합 반응을 촉진시키는 것을 특징으로 하는 반도체장치의 소자 분리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930022236A 1993-10-25 1993-10-25 반도체 장치의 소자 분리 방법 KR970003893B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019930022236A KR970003893B1 (ko) 1993-10-25 1993-10-25 반도체 장치의 소자 분리 방법
US08/268,948 US5447885A (en) 1993-10-25 1994-06-30 Isolation method of semiconductor device
DE4422957A DE4422957B4 (de) 1993-10-25 1994-06-30 Isolierverfahren für eine Halbleitervorrichtung
JP16214294A JP3521963B2 (ja) 1993-10-25 1994-07-14 半導体装置の分離方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930022236A KR970003893B1 (ko) 1993-10-25 1993-10-25 반도체 장치의 소자 분리 방법

Publications (2)

Publication Number Publication Date
KR950012683A true KR950012683A (ko) 1995-05-16
KR970003893B1 KR970003893B1 (ko) 1997-03-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930022236A KR970003893B1 (ko) 1993-10-25 1993-10-25 반도체 장치의 소자 분리 방법

Country Status (4)

Country Link
US (1) US5447885A (ko)
JP (1) JP3521963B2 (ko)
KR (1) KR970003893B1 (ko)
DE (1) DE4422957B4 (ko)

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KR100399972B1 (ko) * 1996-06-28 2003-12-24 주식회사 하이닉스반도체 반도체장치의소자분리막형성방법

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JPH0851105A (ja) * 1994-05-31 1996-02-20 Samsung Electron Co Ltd 半導体装置の素子分離膜形成方法
JPH0883795A (ja) * 1994-07-13 1996-03-26 Nippon Telegr & Teleph Corp <Ntt> 素子分離領域の形成方法
JPH08316223A (ja) * 1995-05-16 1996-11-29 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH098020A (ja) * 1995-06-19 1997-01-10 Nippon Precision Circuits Kk 半導体装置の製造方法
KR0176155B1 (ko) * 1995-06-22 1999-04-15 김광호 반도체 장치의 소자분리 방법
KR100190363B1 (ko) * 1995-06-28 1999-06-01 김영환 반도체 소자의 소자분리 방법
DE19535150A1 (de) * 1995-09-21 1997-03-27 Mosel Vitelic Inc Verfahren zur Herstellung eines integrierten Halbleiterkreises
US5747357A (en) * 1995-09-27 1998-05-05 Mosel Vitelic, Inc. Modified poly-buffered isolation
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US5972777A (en) * 1997-07-23 1999-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming isolation by nitrogen implant to reduce bird's beak
TW358236B (en) * 1997-12-19 1999-05-11 Nanya Technology Corp Improved local silicon oxidization method in the manufacture of semiconductor isolation
JPH11214384A (ja) * 1998-01-28 1999-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
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KR100791779B1 (ko) * 2002-12-30 2008-01-03 동부일렉트로닉스 주식회사 반도체 장치의 소자 분리방법
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KR100399972B1 (ko) * 1996-06-28 2003-12-24 주식회사 하이닉스반도체 반도체장치의소자분리막형성방법

Also Published As

Publication number Publication date
KR970003893B1 (ko) 1997-03-22
JPH07130726A (ja) 1995-05-19
DE4422957A1 (de) 1995-04-27
DE4422957B4 (de) 2006-10-12
US5447885A (en) 1995-09-05
JP3521963B2 (ja) 2004-04-26

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