KR950012555B1 - 메모리셀 캐패시터의 유전막 누설전류 개선방법 - Google Patents

메모리셀 캐패시터의 유전막 누설전류 개선방법 Download PDF

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Publication number
KR950012555B1
KR950012555B1 KR1019920011008A KR920011008A KR950012555B1 KR 950012555 B1 KR950012555 B1 KR 950012555B1 KR 1019920011008 A KR1019920011008 A KR 1019920011008A KR 920011008 A KR920011008 A KR 920011008A KR 950012555 B1 KR950012555 B1 KR 950012555B1
Authority
KR
South Korea
Prior art keywords
memory cell
dielectric
film
cell capacitor
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920011008A
Other languages
English (en)
Korean (ko)
Other versions
KR940001405A (ko
Inventor
노재성
Original Assignee
금성일렉트론주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론주식회사, 문정환 filed Critical 금성일렉트론주식회사
Priority to KR1019920011008A priority Critical patent/KR950012555B1/ko
Priority to TW082104256A priority patent/TW230843B/zh
Priority to DE4320089A priority patent/DE4320089B4/de
Priority to JP5153478A priority patent/JPH0689968A/ja
Publication of KR940001405A publication Critical patent/KR940001405A/ko
Priority to US08/395,260 priority patent/US5569619A/en
Application granted granted Critical
Publication of KR950012555B1 publication Critical patent/KR950012555B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
KR1019920011008A 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법 Expired - Fee Related KR950012555B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019920011008A KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법
TW082104256A TW230843B (https=) 1992-06-24 1993-05-28
DE4320089A DE4320089B4 (de) 1992-06-24 1993-06-17 Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle
JP5153478A JPH0689968A (ja) 1992-06-24 1993-06-24 キャパシタおよびその製造方法
US08/395,260 US5569619A (en) 1992-06-24 1995-02-28 Method for forming a capacitor of a semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011008A KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법

Publications (2)

Publication Number Publication Date
KR940001405A KR940001405A (ko) 1994-01-11
KR950012555B1 true KR950012555B1 (ko) 1995-10-18

Family

ID=19335176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011008A Expired - Fee Related KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법

Country Status (4)

Country Link
JP (1) JPH0689968A (https=)
KR (1) KR950012555B1 (https=)
DE (1) DE4320089B4 (https=)
TW (1) TW230843B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851473A3 (en) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Method of making a layer with high dielectric K, gate and capacitor insulator layer and device
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
KR19980060601A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 캐패시터 제조방법
JP4353665B2 (ja) * 2001-10-31 2009-10-28 三洋アクアテクノ株式会社 濾過装置
KR20040019512A (ko) 2002-08-28 2004-03-06 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338248A (ja) * 1986-08-04 1988-02-18 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
TW230843B (https=) 1994-09-21
DE4320089B4 (de) 2007-05-03
JPH0689968A (ja) 1994-03-29
DE4320089A1 (de) 1994-01-05
KR940001405A (ko) 1994-01-11

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