KR19990077506A - 개선된게이트유전체를위한Si(111)상의초박결정실리콘질화물제조공정 - Google Patents
개선된게이트유전체를위한Si(111)상의초박결정실리콘질화물제조공정 Download PDFInfo
- Publication number
- KR19990077506A KR19990077506A KR1019990006710A KR19990006710A KR19990077506A KR 19990077506 A KR19990077506 A KR 19990077506A KR 1019990006710 A KR1019990006710 A KR 1019990006710A KR 19990006710 A KR19990006710 A KR 19990006710A KR 19990077506 A KR19990077506 A KR 19990077506A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric layer
- silicon nitride
- semiconductor device
- layer
- electrode layer
- Prior art date
Links
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 23
- 239000003989 dielectric material Substances 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 239000004408 titanium dioxide Substances 0.000 claims abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (21)
- 반도체 장치의 제조 방법에 있어서,(a) 실리콘(111) 표면을 제공하는 단계,(b) 상기 표면 상에 결정 실리콘 질화물의 유전체층을 형성하는 단계, 및(c) 상기 실리콘 질화물의 유전체층 상에 전극층을 형성하는 단계를 포함하는 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 표면을 클리닝하고 상기 표면을 원자적으로 평탄하게 하는 단계를 더 포함하는 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 결정 실리콘 질화물의 유전체층을 형성하는 상기 단계가 약 850℃ 내지 약 1000℃의 온도에서 약 1x10-7내지 약 1x10-5Torr의 압력으로 암모니아 분위기에 상기 표면을 위치시키는 단계를 포함하는 반도체 장치의 제조 방법.
- 제2항에 있어서, 상기 결정 실리콘 질화물의 유전체층을 형성하는 상기 단계가 약 850℃ 내지 약 1000℃의 온도에서 약 1x10-7내지 약 1x10-5Torr의 압력으로 암모니아 분위기에 상기 표면을 위치시키는 단계를 포함하는 반도체 장치의 제조 방법.
- 제3항에 있어서, 상기 전극층이 붕소 도핑된 실리콘인 반도체 장치의 제조 방법.
- 제4항에 있어서, 상기 전극층이 붕소 도핑된 실리콘인 반도체 장치의 제조 방법.
- 반도체 장치에 있어서,(a) 실리콘(111) 표면,(b) 상기 표면 상의 결정 실리콘 질화물의 유전체층, 및(c) 상기 실리콘 질화물의 유전체층 상의 전극층을 포함하는 반도체 장치.
- 제7항에 있어서, 상기 표면이 클리닝되고 원자적으로 평탄한 반도체 장치.
- 제7항에 있어서, 상기 전극층이 붕소 도핑된 실리콘인 반도체 장치.
- 제8항에 있어서, 상기 전극층이 붕소 도핑된 실리콘인 반도체 장치.
- 반도체 장치를 제조하는 방법에 있어서,(a) 실리콘(111) 표면을 제공하는 단계,(b) 약 2 모노층(monolayers)의 두께를 갖는 결정 실리콘 질화물의 제1 유전체층을 상기 표면 상에 형성하는 단계,(c) 실리콘 질화물과 호환가능하고 실리콘 질화물보다 높은 유전율을 갖는 제2 유전체층을 상기 제1 유전체층 상에 형성하는 단계, 및(d) 상기 제2 유전체층 위에 전극층을 형성하는 단계를 포함하는 반도체 장치의 제조 방법.
- 제11항에 있어서, 상기 제2 유전체층과 상기 전극층간에 약 2 모노층의 두께를 갖는 실리콘 질화물의 제3 유전체층을 형성하는 단계를 더 포함하는 반도체 장치의 제조 방법.
- 제11항에 있어서, 상기 제2 유전체층이 탄탈륨 5산화물, 티타늄 2산화물 및 페로브스카이트 재료로 이루어진 클래스로부터 취해지는 반도체 장치의 제조 방법.
- 제12항에 있어서, 상기 제2 유전체층이 탄탈륨 5산화물, 티타늄 2산화물 및 페로브스카이트 재료로 이루어진 클래스로부터 취해지는 반도체 장치의 제조 방법.
- 제11항에 있어서, 상기 결정 실리콘 질화물의 제1 유전체층을 형성하는 상기 단계는 약 850℃ 내지 약 1000℃의 온도에서 약 1x10-7내지 약 1x10-5Torr의 압력으로 암모니아 분위기에 상기 표면을 위치시키는 단계를 포함하는 반도체 장치의 제조 방법.
- 제14항에 있어서, 상기 결정 실리콘 질화물의 유전체층을 형성하는 상기 단계는 약 850℃ 내지 약 1000℃의 온도에서 약 1x10-7내지 약 1x10-5Torr의 압력으로 암모니아 분위기에 상기 표면을 위치시키는 단계를 포함하는 반도체 장치의 제조 방법.
- 제16항에 있어서, 상기 전극층은 붕소 도핑된 실리콘인 반도체 장치의 제조 방법.
- 반도체 장치에 있어서,(a) 실리콘(111) 표면,(b) 약 2 모노층의 두께를 갖는 상기 표면 상의 결정 실리콘 질화물의 제1 유전체층,(c) 실리콘 질화물과 호환가능하고 실리콘 질화물보다 높은 유전율을 갖는 상기 제1 유전체층 상의 제2 유전체층, 및(d) 상기 제2 유전체층 위의 전극층을 포함하는 반도체 장치.
- 제18항에 있어서, 상기 제2 유전체층 및 상기 전극층 간에 약 2 모노층의 두께를 갖는 실리콘 질화물의 제3 유전체층을 더 포함하는 반도체 장치.
- 제19항에 있어서, 상기 제2 유전체층이 탄탈륨 5산화물, 티타늄 2산화물 및 페로브스카이트 재료로 이루어진 클래스로부터 취해지는 반도체 장치.
- 제20항에 있어서, 상기 전극층이 붕소 도핑된 실리콘인 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7957398P | 1998-03-27 | 1998-03-27 | |
US60/079,573 | 1998-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990077506A true KR19990077506A (ko) | 1999-10-25 |
KR100567299B1 KR100567299B1 (ko) | 2006-04-04 |
Family
ID=49297279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990006710A KR100567299B1 (ko) | 1998-03-27 | 1999-02-27 | 반도체 장치 및 반도체 장치의 게이트 구조 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6277681B1 (ko) |
JP (1) | JP2000004018A (ko) |
KR (1) | KR100567299B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100449072B1 (ko) * | 2002-05-21 | 2004-09-18 | 한국전자통신연구원 | 강유전체 소자 및 그 제조 방법 |
KR100779899B1 (ko) * | 2005-04-08 | 2007-11-28 | 인피니온 테크놀로지스 아게 | 반도체 장치 및 그 제조 방법 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294807B1 (en) * | 1999-02-26 | 2001-09-25 | Agere Systems Guardian Corp. | Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers |
JP2001015739A (ja) * | 1999-06-30 | 2001-01-19 | Nec Corp | ゲート絶縁膜とその製造方法 |
DE19947053C1 (de) * | 1999-09-30 | 2001-05-23 | Infineon Technologies Ag | Grabenkondensator zu Ladungsspeicherung und Verfahren zu seiner Herstellung |
CA2360312A1 (en) | 2000-10-30 | 2002-04-30 | National Research Council Of Canada | Novel gate dielectric |
US6831339B2 (en) | 2001-01-08 | 2004-12-14 | International Business Machines Corporation | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same |
JP3792589B2 (ja) * | 2001-03-29 | 2006-07-05 | 富士通株式会社 | 半導体装置の製造方法 |
US6509612B2 (en) * | 2001-05-04 | 2003-01-21 | International Business Machines Corporation | High dielectric constant materials as gate dielectrics (insulators) |
US6891231B2 (en) * | 2001-06-13 | 2005-05-10 | International Business Machines Corporation | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier |
US20040171252A1 (en) * | 2003-02-28 | 2004-09-02 | Haoren Zhuang | Reduced contamination of tools in semiconductor processing |
JP4748927B2 (ja) * | 2003-03-25 | 2011-08-17 | ローム株式会社 | 半導体装置 |
JP4536333B2 (ja) * | 2003-04-03 | 2010-09-01 | 忠弘 大見 | 半導体装置及び、その製造方法 |
JP4712292B2 (ja) * | 2003-09-02 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置及びその製造方法 |
US20050054156A1 (en) * | 2003-09-10 | 2005-03-10 | International Business Machines Corporation | Capacitor and fabrication method using ultra-high vacuum cvd of silicon nitride |
US7285312B2 (en) * | 2004-01-16 | 2007-10-23 | Honeywell International, Inc. | Atomic layer deposition for turbine components |
JP4296128B2 (ja) | 2004-06-23 | 2009-07-15 | 株式会社東芝 | 不揮発性半導体メモリ装置及びその製造方法 |
US9148712B2 (en) | 2010-12-10 | 2015-09-29 | Infineon Technologies Ag | Micromechanical digital loudspeaker |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422306A (en) * | 1991-12-17 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Method of forming semiconductor hetero interfaces |
US5872376A (en) * | 1997-03-06 | 1999-02-16 | Advanced Micro Devices, Inc. | Oxide formation technique using thin film silicon deposition |
US5966624A (en) * | 1997-07-29 | 1999-10-12 | Siemens Aktiengesellschaft | Method of manufacturing a semiconductor structure having a crystalline layer |
-
1999
- 1999-02-27 KR KR1019990006710A patent/KR100567299B1/ko not_active IP Right Cessation
- 1999-03-16 US US09/270,173 patent/US6277681B1/en not_active Expired - Lifetime
- 1999-03-19 JP JP7472899A patent/JP2000004018A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100449072B1 (ko) * | 2002-05-21 | 2004-09-18 | 한국전자통신연구원 | 강유전체 소자 및 그 제조 방법 |
KR100779899B1 (ko) * | 2005-04-08 | 2007-11-28 | 인피니온 테크놀로지스 아게 | 반도체 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US6277681B1 (en) | 2001-08-21 |
JP2000004018A (ja) | 2000-01-07 |
KR100567299B1 (ko) | 2006-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100567299B1 (ko) | 반도체 장치 및 반도체 장치의 게이트 구조 제조 방법 | |
US6787863B2 (en) | Mos field effect transistor and mos capacitor | |
US7863667B2 (en) | Zirconium titanium oxide films | |
KR100287985B1 (ko) | 레이저장치의출력제어장치 | |
US5438012A (en) | Method of fabricating capacitor element in super-LSI | |
US7037862B2 (en) | Dielectric layer forming method and devices formed therewith | |
US6228779B1 (en) | Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology | |
US7923322B2 (en) | Method of forming a capacitor | |
EP1028458A2 (en) | Chemical vapor deposition of silicate high dielectric constant materials | |
US20050029547A1 (en) | Lanthanide oxide / hafnium oxide dielectric layers | |
US20020048911A1 (en) | Methods of forming a contact to a substrate, and methods of forming a capacitor | |
JPH0673367B2 (ja) | 半導体集積回路容量の製作方法 | |
US5858852A (en) | Fabrication process of a stack type semiconductor capacitive element | |
US6573197B2 (en) | Thermally stable poly-Si/high dielectric constant material interfaces | |
JP4120938B2 (ja) | 高誘電率絶縁膜を有する半導体装置とその製造方法 | |
US6495409B1 (en) | MOS transistor having aluminum nitride gate structure and method of manufacturing same | |
TWI279891B (en) | Method of manufacturing a flash memory cell | |
US6420729B2 (en) | Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics | |
KR20020037337A (ko) | 결정질 질화 실리콘 형성 방법 | |
KR19990030230A (ko) | 집적 회로 구조 및 제조 방법 | |
KR100621542B1 (ko) | 미세 전자 소자의 다층 유전체막 및 그 제조 방법 | |
US20030003656A1 (en) | Method of manufacturing flash memory device | |
KR100489650B1 (ko) | 반도체장치의커패시터제조방법 | |
KR100448238B1 (ko) | 반도체 장치 제조 방법 | |
JPH06140627A (ja) | 電界効果型トランジスタ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130227 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140227 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150227 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20151230 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20161229 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20171228 Year of fee payment: 13 |
|
EXPY | Expiration of term |