KR940001266A - 메탈 마스크 공정시 광반사 감소방법 - Google Patents

메탈 마스크 공정시 광반사 감소방법 Download PDF

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Publication number
KR940001266A
KR940001266A KR1019920010484A KR920010484A KR940001266A KR 940001266 A KR940001266 A KR 940001266A KR 1019920010484 A KR1019920010484 A KR 1019920010484A KR 920010484 A KR920010484 A KR 920010484A KR 940001266 A KR940001266 A KR 940001266A
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KR
South Korea
Prior art keywords
light reflection
metal mask
mask process
reduce light
porous oxide
Prior art date
Application number
KR1019920010484A
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English (en)
Other versions
KR950007478B1 (ko
Inventor
허휘
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019920010484A priority Critical patent/KR950007478B1/ko
Priority to DE4320033A priority patent/DE4320033B4/de
Priority to JP16986493A priority patent/JP3306678B2/ja
Publication of KR940001266A publication Critical patent/KR940001266A/ko
Application granted granted Critical
Publication of KR950007478B1 publication Critical patent/KR950007478B1/ko
Priority to US08/583,766 priority patent/US5670298A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Abstract

본 발명은 메탈 마스크 공정시 광반사를 감소시켜 리지스트 패턴의 노칭 효과를 최소화시키기에 적당하도록한 메탈 마스크 공정시 광반사 감소방법에 관한 것으로, 노광 공정시 및 반사가 심한 메탈필름(1) 상에 기공성을 가진 포러스 옥사이 드로 ARC필름(3)을 형성시켜 이루어지며 상기에서 포러스 옥사인드로는 03TEOS를 사용한다.

Description

메탈 마스크 공정시 광반사 감소방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 메탈 마스크 공정 단면도.

Claims (4)

  1. 노광 공정시 필름(1)상에 ARC필릅(3)을 적층시켜 이루어짐을 특징으로 하는 메탈 마스크 공정시 광반사 감소방법.
  2. 제1항에 있어서, 필름(1)은 메탈로 형성됨을 특징으로 하는 메탈 마스크 공정시 광반사 감소방법.
  3. 제1항에 있어서, ARC필름(3)으로는 기공성을 가진 포러스 옥사이드를 저온에서 형성시킴을 특징으로 하는 메탈 마스크 공정시 광반사 감소방법.
  4. 제3항에 있어서, 포러스 옥사이드로는 O3TEOS를 사용함을 특징으로 하는 메탈 마스크 공정시 광반사 감소방법
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920010484A 1992-06-17 1992-06-17 메탈 마스크 공정시 광반사 감소방법 KR950007478B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019920010484A KR950007478B1 (ko) 1992-06-17 1992-06-17 메탈 마스크 공정시 광반사 감소방법
DE4320033A DE4320033B4 (de) 1992-06-17 1993-06-17 Verfahren zur Bildung eines Metallmusters bei der Herstellung einer Halbleitereinrichtung
JP16986493A JP3306678B2 (ja) 1992-06-17 1993-06-17 金属パターン膜の形成方法
US08/583,766 US5670298A (en) 1992-06-17 1996-01-11 Method of forming a metal pattern in manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920010484A KR950007478B1 (ko) 1992-06-17 1992-06-17 메탈 마스크 공정시 광반사 감소방법

Publications (2)

Publication Number Publication Date
KR940001266A true KR940001266A (ko) 1994-01-11
KR950007478B1 KR950007478B1 (ko) 1995-07-11

Family

ID=19334793

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010484A KR950007478B1 (ko) 1992-06-17 1992-06-17 메탈 마스크 공정시 광반사 감소방법

Country Status (4)

Country Link
US (1) US5670298A (ko)
JP (1) JP3306678B2 (ko)
KR (1) KR950007478B1 (ko)
DE (1) DE4320033B4 (ko)

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US5705301A (en) * 1996-02-27 1998-01-06 Lsi Logic Corporation Performing optical proximity correction with the aid of design rule checkers
US6451706B1 (en) * 1996-06-03 2002-09-17 Chartered Semiconductor Manufacturing Ltd. Attenuation of reflecting lights by surface treatment
KR100436131B1 (ko) * 1996-12-20 2004-08-25 주식회사 하이닉스반도체 반도체소자의미세패턴형성방법
FR2758003B1 (fr) * 1996-12-27 1999-06-18 France Telecom Traitement anti-reflet de surfaces reflectives
US6282696B1 (en) 1997-08-15 2001-08-28 Lsi Logic Corporation Performing optical proximity correction with the aid of design rule checkers
US6426131B1 (en) 1998-08-24 2002-07-30 Lsi Logic Corporation Off-axis pupil aperture and method for making the same
US6169029B1 (en) * 1999-05-03 2001-01-02 Winband Electronics Corp. Method of solving metal stringer problem which is induced by the product of tin and organic ARC reaction
WO2002039187A1 (fr) * 2000-11-08 2002-05-16 Jsr Corporation Compositions pour film sub-resist et leurs procedes de preparation, et films sub-resist et leurs procedes de production
US6777829B2 (en) 2002-03-13 2004-08-17 Celis Semiconductor Corporation Rectifier utilizing a grounded antenna
US7365023B2 (en) * 2003-04-17 2008-04-29 Nissan Chemical Industries, Ltd. Porous underlayer coating and underlayer coating forming composition for forming porous underlayer coating
DE10324050A1 (de) * 2003-05-27 2004-12-30 Infineon Technologies Ag Schichtstapel und Verfahren zur Herstellung eines Schichtstapels
US7384727B2 (en) * 2003-06-26 2008-06-10 Micron Technology, Inc. Semiconductor processing patterning methods
DE10339988B4 (de) * 2003-08-29 2008-06-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer antireflektierenden Schicht
US7115532B2 (en) * 2003-09-05 2006-10-03 Micron Technolgoy, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US6969677B2 (en) * 2003-10-20 2005-11-29 Micron Technology, Inc. Methods of forming conductive metal silicides by reaction of metal with silicon
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US7153769B2 (en) * 2004-04-08 2006-12-26 Micron Technology, Inc. Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
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US7241705B2 (en) * 2004-09-01 2007-07-10 Micron Technology, Inc. Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
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US4820611A (en) * 1987-04-24 1989-04-11 Advanced Micro Devices, Inc. Titanium nitride as an antireflection coating on highly reflective layers for photolithography
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Also Published As

Publication number Publication date
DE4320033B4 (de) 2005-05-12
KR950007478B1 (ko) 1995-07-11
US5670298A (en) 1997-09-23
DE4320033A1 (de) 1993-12-23
JP3306678B2 (ja) 2002-07-24
JPH06216024A (ja) 1994-08-05

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