KR920015469A - 메탈 에칭(metal etch)시 메탈 증착방법 - Google Patents

메탈 에칭(metal etch)시 메탈 증착방법 Download PDF

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Publication number
KR920015469A
KR920015469A KR1019910000404A KR910000404A KR920015469A KR 920015469 A KR920015469 A KR 920015469A KR 1019910000404 A KR1019910000404 A KR 1019910000404A KR 910000404 A KR910000404 A KR 910000404A KR 920015469 A KR920015469 A KR 920015469A
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KR
South Korea
Prior art keywords
metal
deposition method
method during
etch
metal deposition
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Application number
KR1019910000404A
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English (en)
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KR930010672B1 (ko
Inventor
이남규
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910000404A priority Critical patent/KR930010672B1/ko
Publication of KR920015469A publication Critical patent/KR920015469A/ko
Application granted granted Critical
Publication of KR930010672B1 publication Critical patent/KR930010672B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

메탈 에칭(metal etch)시 메탈 증착방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따른 메탈 에칭전 상태도, 제5도는 본 발명에 따른 메탈 에칭후 상태도.

Claims (1)

  1. 메탈의 상,하측에 온도 변화를 주고 에칭율의 변화를 이룬 상태로 증착하여 에칭하는 것을 특징으로 하는 메탈 에칭시 메탈 증착방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910000404A 1991-01-12 1991-01-12 반도체 소자의 금속식각 방법 KR930010672B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000404A KR930010672B1 (ko) 1991-01-12 1991-01-12 반도체 소자의 금속식각 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000404A KR930010672B1 (ko) 1991-01-12 1991-01-12 반도체 소자의 금속식각 방법

Publications (2)

Publication Number Publication Date
KR920015469A true KR920015469A (ko) 1992-08-26
KR930010672B1 KR930010672B1 (ko) 1993-11-05

Family

ID=19309705

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000404A KR930010672B1 (ko) 1991-01-12 1991-01-12 반도체 소자의 금속식각 방법

Country Status (1)

Country Link
KR (1) KR930010672B1 (ko)

Also Published As

Publication number Publication date
KR930010672B1 (ko) 1993-11-05

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