KR930011350A - 반도체 레이저 다이오드 제조방법 - Google Patents

반도체 레이저 다이오드 제조방법 Download PDF

Info

Publication number
KR930011350A
KR930011350A KR1019910019770A KR910019770A KR930011350A KR 930011350 A KR930011350 A KR 930011350A KR 1019910019770 A KR1019910019770 A KR 1019910019770A KR 910019770 A KR910019770 A KR 910019770A KR 930011350 A KR930011350 A KR 930011350A
Authority
KR
South Korea
Prior art keywords
laser diode
conductivity type
layer
forming
semiconductor laser
Prior art date
Application number
KR1019910019770A
Other languages
English (en)
Other versions
KR940007605B1 (ko
Inventor
안형수
최원택
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910019770A priority Critical patent/KR940007605B1/ko
Priority to US07/972,015 priority patent/US5346854A/en
Publication of KR930011350A publication Critical patent/KR930011350A/ko
Priority to US08/257,888 priority patent/US5570385A/en
Application granted granted Critical
Publication of KR940007605B1 publication Critical patent/KR940007605B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

내용 없음

Description

반도체 레이저 다이오드 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 반도체 레이저 다이오드 공정사시도.
제 2 도는 제 1 도중 레이저 다이오드 부분의 공정사시도.
제 3 도는 본 발명에 의한 반도체 레이저 다이오드의 사시도.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : SiO₁ 또는 Si₃N₄
3 : AlGaAs층 4, 5 : GaAs층
6 : DH층 7, 8 : 전극

Claims (3)

  1. 제 1 도전형의 기판(1)에 마스크와 식각 공정으로 캐비티를 결정하는 리지를 형성하는 공정과 , 제 2 도 전형의 AlGaAs층(3)과 제 2 도전형의 GaAs층(4)을 리지 깊이만큼 성장하는 공정과, 전표면에 제 2 도전형의 GaAs층(5)을 형성하여 포토 에치공정으로 리지의 길이 방향에 수직한 전류주입 채널을 형성하는 공정과, 전표면에 DH층(6)을 성장하고 채널을 중심으로 레이저 다이오드의 공진기 길이를 설정하여 기판 표면까지 에칭하는 공정과, 전극(7)을 형성하고 초음파에 의해 레이저 다이오드의 미러면 형성이 용이하도록 상기 AlGaAs층(3)을 선택적으로 에칭하고, 초음파에 의해 절단 제거하고, 미러코팅을 하는 공정으로 이루어짐을 특징으로 하는 반도체 레이저 다이오드 제조방법.
  2. 제 1 항에 있어서, 공진기 길이가 최대 50㎛가 되도록하고, 제 2 도전형 GaAs층(4)과 제 2 도전형 GaAs층(5)을 각각 0.8㎛-1.0㎛와, 1㎛의 두께로 함을 특징으로 하는 반도체 레이저 다이오드 제조방법.
  3. 제 1 항에 있어서, 제 2 도전형 AlGaAs층(2)의 에칭시 HF용액을 사용하여 에칭함을 특징으로 하는 반도체 레이저 다이오드 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910019770A 1991-11-07 1991-11-07 반도체 레이저 다이오드 제조방법 KR940007605B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019910019770A KR940007605B1 (ko) 1991-11-07 1991-11-07 반도체 레이저 다이오드 제조방법
US07/972,015 US5346854A (en) 1991-11-07 1992-11-06 Method of making a semiconductor laser
US08/257,888 US5570385A (en) 1991-11-07 1994-06-10 Semiconductor laser and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910019770A KR940007605B1 (ko) 1991-11-07 1991-11-07 반도체 레이저 다이오드 제조방법

Publications (2)

Publication Number Publication Date
KR930011350A true KR930011350A (ko) 1993-06-24
KR940007605B1 KR940007605B1 (ko) 1994-08-20

Family

ID=19322431

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910019770A KR940007605B1 (ko) 1991-11-07 1991-11-07 반도체 레이저 다이오드 제조방법

Country Status (2)

Country Link
US (2) US5346854A (ko)
KR (1) KR940007605B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100374516B1 (ko) * 2001-04-04 2003-03-03 임경화 마이크로 미러의 제조방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111357A (ja) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp 半導体レーザの製造方法
EP0704913B1 (en) * 1994-09-28 1999-09-01 Nippon Telegraph And Telephone Corporation Optical semiconductor device and method of fabricating the same
KR0178492B1 (ko) * 1995-12-21 1999-04-15 양승택 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
SE516784C2 (sv) * 1999-07-08 2002-03-05 Ericsson Telefon Ab L M Förfarande för effektivt urval av DFB-lasrar
EP1282208A1 (en) * 2001-07-30 2003-02-05 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor laser structure and method of manufacturing same
US6759309B2 (en) * 2002-05-28 2004-07-06 Applied Materials, Inc. Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates
US7284913B2 (en) * 2003-07-14 2007-10-23 Matsushita Electric Industrial Co., Ltd. Integrated fiber attach pad for optical package

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162896A (en) * 1980-05-20 1981-12-15 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
EP0253095B1 (en) * 1980-06-26 1992-02-19 Texas Instruments Incorporated Memory interface system
JPS5897888A (ja) * 1981-12-08 1983-06-10 Nec Corp 半導体レ−ザ
US4466696A (en) * 1982-03-29 1984-08-21 Honeywell Inc. Self-aligned coupling of optical fiber to semiconductor laser or LED
JPS59155981A (ja) * 1983-02-25 1984-09-05 Nec Corp 埋め込み型半導体レーザ素子の製造方法
JPS59197184A (ja) * 1983-04-25 1984-11-08 Nec Corp 半導体レ−ザ
JPS59220985A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体レ−ザ装置
CA1247947A (en) * 1984-07-31 1989-01-03 Masaru Wada Method of manufacturing semiconductor device
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
GB2172141B (en) * 1985-03-08 1988-11-16 Stc Plc Single heterostructure laser chip manufacture
JPS6242532A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法
JPH0210842A (ja) * 1988-06-29 1990-01-16 Fujitsu Ltd リセスゲートを有する半導体装置の製造方法
JPH0257691A (ja) * 1988-08-22 1990-02-27 Kurita Water Ind Ltd 一価金属塩の晶析防上剤
EP0361153A3 (de) * 1988-09-29 1991-07-24 Siemens Aktiengesellschaft Anordnung zum Koppeln einer optischen Faser an ein Koppelfenster eines planar integriert optischen Bauteils und Verfahren zur Herstellung einer solchen Anordnung
US5159603A (en) * 1991-06-05 1992-10-27 United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Quantum well, beam deflecting surface emitting lasers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100374516B1 (ko) * 2001-04-04 2003-03-03 임경화 마이크로 미러의 제조방법

Also Published As

Publication number Publication date
KR940007605B1 (ko) 1994-08-20
US5346854A (en) 1994-09-13
US5570385A (en) 1996-10-29

Similar Documents

Publication Publication Date Title
KR960043371A (ko) 단파 수직 캐비티면 방출 레이저 장치 및 그 제조 방법
KR910007153A (ko) 메사형으로 이루어진 반도체 보디의 제조방법
KR930011350A (ko) 반도체 레이저 다이오드 제조방법
KR960002999A (ko) 수직 공동 표면 방출 레이저(vcsel) 및 그 제조 방법
EP0387920B1 (en) Window vsis semiconductor laser
KR890013839A (ko) 반도체 레이저 장치 및 그 제조방법
KR920013824A (ko) 레이저 다이오드 제조방법
KR880008479A (ko) 반도체레이저장치의 제조방법
KR950015882A (ko) 레이저 다이오드와 그 제조방법
KR950012787A (ko) 반도체 레이저 소자 및 그 제조방법
KR930005298A (ko) 반도체 레이저 다이오드의 제조방법
KR950010244A (ko) 고출력 반도체 레이저 및 그 제조방법
KR920013828A (ko) 반도체 레이저 다이오드 제조방법
KR930005299A (ko) 반도체 레이저 다이오드의 제조방법
KR930009179A (ko) 레이저 다이오드의 제조방법
KR950007214A (ko) 반도체 레이저 소자 및 그의 제조방법
KR930007018A (ko) 반도체 레이저 다이오드의 제조방법
KR940017023A (ko) 메사패턴이 있는 기판을 이용한 표면방출 반도체 레이저 다이오드 소자의 제조방법
KR950012821A (ko) 반도체 레이저 다이오드 및 그의 제조방법
KR930020786A (ko) 레이저다이오드 및 그 제조방법
KR930007017A (ko) 반도체 레이저 다이오드 제조방법
KR920020799A (ko) 반도체 레이저 다이오드의 제조방법
KR950012835A (ko) 레이저 다이오드 및 그의 제조방법
KR920020795A (ko) 반도체 레이저 다이오드 제조방법
KR930011347A (ko) 레이저 다이오드의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030707

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee