KR880008479A - 반도체레이저장치의 제조방법 - Google Patents

반도체레이저장치의 제조방법 Download PDF

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Publication number
KR880008479A
KR880008479A KR1019870009930A KR870009930A KR880008479A KR 880008479 A KR880008479 A KR 880008479A KR 1019870009930 A KR1019870009930 A KR 1019870009930A KR 870009930 A KR870009930 A KR 870009930A KR 880008479 A KR880008479 A KR 880008479A
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South Korea
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conductivity type
manufacturing
laser device
crystal growth
semiconductor layer
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KR1019870009930A
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English (en)
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KR930008359B1 (ko
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유다까 나가이
유다까 미하시
데쓰야 야기
요오이찌로오 오오다
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시기모리야
미쓰비시 뎅끼 가부시기가이샤
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Publication of KR880008479A publication Critical patent/KR880008479A/ko
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Publication of KR930008359B1 publication Critical patent/KR930008359B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음.

Description

반도체레이저장치의 제조방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체레이저장치의 제조방법에 의하여 얻어지는 반도체레이저장치의 일실시예의 단면도.

Claims (2)

  1. 기판상에 2회의 결정성장을 하므로서 형성되고, 제1회째의 결정성장으로 최후에 Aι을 포함한 반도체 층이 형성되는 반도체레이저장치의 제조방법으로서 제1회째의 결정성장을 한 반도체층에 선택에칭을 하여 스트라이프형성홈을 형성하고 상기 Aι을 포함한 반도체층을 노출시킨 후, 제2회째의 결정성장공정으로 상기 Aι을 포함하는 반도체층상에 Aι을 포함하지 않는 반도체층을 개재하여 Aι을 포함하는 반도체층을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체레이저장치의 제조방법.
  2. 제1항에 있어서, 기판이 제1전도형의 GaAs로 되었고 제1회째의 결정성장으로 제1전도형의 AlxGal-zAs로된 버퍼층 및 제2전도형의 GaAs 또는 AlyGal-yAs로된 전류블록층을 성장시키고 제2회째의 결정성장으로 제1전도형의 GaAs로된 버퍼층, 제1전도형의 AlzGal-zAs로된 제1클래드층, Al Gal-As로된 활성층, 제2전도형의 Al Gal-As로된 제2클래드층 및 제2전도형의 GaAs로된 콘택트층을 성장시키는 것을 특징으로 하는 반도체레이저장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870009930A 1986-12-02 1987-09-08 반도체레이저장치의 제조방법 KR930008359B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP86-288434 1986-12-02
JP61288434A JPS63140591A (ja) 1986-12-02 1986-12-02 半導体レ−ザ装置の製造方法
JP61-288434 1986-12-02

Publications (2)

Publication Number Publication Date
KR880008479A true KR880008479A (ko) 1988-08-31
KR930008359B1 KR930008359B1 (ko) 1993-08-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009930A KR930008359B1 (ko) 1986-12-02 1987-09-08 반도체레이저장치의 제조방법

Country Status (5)

Country Link
US (1) US4829023A (ko)
EP (1) EP0270361B1 (ko)
JP (1) JPS63140591A (ko)
KR (1) KR930008359B1 (ko)
DE (1) DE3775729D1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293690A (ja) * 1988-05-23 1989-11-27 Mitsubishi Electric Corp 半導体レーザ
JPH0719931B2 (ja) * 1989-04-06 1995-03-06 三菱電機株式会社 半導体レーザ装置およびその製造方法
JPH07183618A (ja) * 1993-12-22 1995-07-21 Ricoh Co Ltd 半導体レーザ装置、半導体レーザ装置製造方法並びに集積型半導体レーザ装置
EP0811251A2 (en) * 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. MULTICOLOR LIGHT EMITTING DIODE, METHODS FOR PRODUCING SAME AND MULTICOLOR DISPLAY INCORPORATING AN ARRAY OF SUCH LEDs

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920491A (en) * 1973-11-08 1975-11-18 Nippon Electric Co Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
US3859178A (en) * 1974-01-17 1975-01-07 Bell Telephone Labor Inc Multiple anodization scheme for producing gaas layers of nonuniform thickness
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
US4269635A (en) * 1977-12-28 1981-05-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
DE3483733D1 (de) * 1983-04-27 1991-01-24 Toshiba Kawasaki Kk Halbleiterlaser.
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60217689A (ja) * 1984-04-13 1985-10-31 Oki Electric Ind Co Ltd 半導体発光素子の製造方法

Also Published As

Publication number Publication date
JPS63140591A (ja) 1988-06-13
EP0270361A2 (en) 1988-06-08
KR930008359B1 (ko) 1993-08-30
EP0270361A3 (en) 1988-11-30
US4829023A (en) 1989-05-09
EP0270361B1 (en) 1992-01-02
DE3775729D1 (de) 1992-02-13

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