KR920007786B1 - 전계효과형 트랜지스터의 제조방법 - Google Patents

전계효과형 트랜지스터의 제조방법 Download PDF

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Publication number
KR920007786B1
KR920007786B1 KR1019840008292A KR840008292A KR920007786B1 KR 920007786 B1 KR920007786 B1 KR 920007786B1 KR 1019840008292 A KR1019840008292 A KR 1019840008292A KR 840008292 A KR840008292 A KR 840008292A KR 920007786 B1 KR920007786 B1 KR 920007786B1
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South Korea
Prior art keywords
film
annealing
plasma
manufacturing
silicon nitride
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KR1019840008292A
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English (en)
Korean (ko)
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KR850005163A (ko
Inventor
히사오 하야시
히사요시 야모도
지아끼 사까이
Original Assignee
쏘니 가부시기가이샤
오오가 노리오
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Application filed by 쏘니 가부시기가이샤, 오오가 노리오 filed Critical 쏘니 가부시기가이샤
Publication of KR850005163A publication Critical patent/KR850005163A/ko
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Publication of KR920007786B1 publication Critical patent/KR920007786B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
KR1019840008292A 1983-12-24 1984-12-24 전계효과형 트랜지스터의 제조방법 KR920007786B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58248972A JPS60136259A (ja) 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法
JP83-248972 1983-12-24
JP58-248972 1983-12-24

Publications (2)

Publication Number Publication Date
KR850005163A KR850005163A (ko) 1985-08-21
KR920007786B1 true KR920007786B1 (ko) 1992-09-17

Family

ID=17186123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840008292A KR920007786B1 (ko) 1983-12-24 1984-12-24 전계효과형 트랜지스터의 제조방법

Country Status (2)

Country Link
JP (1) JPS60136259A (ja)
KR (1) KR920007786B1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284562A (ja) * 1985-10-08 1987-04-18 Seiko Epson Corp 半導体装置とその製造方法
JPS62204575A (ja) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
JP2865284B2 (ja) * 1986-03-10 1999-03-08 松下電器産業株式会社 薄膜半導体デバイス
JPH0750737B2 (ja) * 1987-03-02 1995-05-31 日本電気株式会社 半導体装置の製造方法
JP2802618B2 (ja) * 1987-03-26 1998-09-24 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2764395B2 (ja) * 1987-04-20 1998-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPS6432678A (en) * 1987-07-28 1989-02-02 Ricoh Kk Thin-film transistor
JP2589327B2 (ja) * 1987-11-14 1997-03-12 株式会社リコー 薄膜トランジスタの製造方法
JP2712433B2 (ja) * 1988-12-07 1998-02-10 富士ゼロックス株式会社 逆スタガード型薄膜トランジスタの製造方法
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法
JPH05218430A (ja) * 1992-02-07 1993-08-27 G T C:Kk 多結晶シリコン薄膜トランジスタおよびその製造方法
US5440168A (en) * 1993-02-22 1995-08-08 Ryoden Semiconductor System Engineering Corporation Thin-film transistor with suppressed off-current and Vth
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP2899960B2 (ja) * 1996-12-09 1999-06-02 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2899959B2 (ja) * 1996-12-09 1999-06-02 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP5057605B2 (ja) * 1999-03-17 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
US7629236B2 (en) 2004-08-26 2009-12-08 Alliance For Sustainable Energy, Llc Method for passivating crystal silicon surfaces
JP2007242895A (ja) 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
JP5172178B2 (ja) 2007-03-15 2013-03-27 三菱電機株式会社 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS57169248A (en) * 1981-04-13 1982-10-18 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS59136926A (ja) * 1983-01-25 1984-08-06 Seiko Epson Corp 半導体装置の製法
JPH0338755A (ja) * 1989-07-05 1991-02-19 Nec Corp ファイル転送システム

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Publication number Publication date
KR850005163A (ko) 1985-08-21
JPS60136259A (ja) 1985-07-19
JPH0457098B2 (ja) 1992-09-10

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