KR910020883A - 식별회로를 구비한 반도체 집적회로 칩 - Google Patents

식별회로를 구비한 반도체 집적회로 칩 Download PDF

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Publication number
KR910020883A
KR910020883A KR1019900007481A KR900007481A KR910020883A KR 910020883 A KR910020883 A KR 910020883A KR 1019900007481 A KR1019900007481 A KR 1019900007481A KR 900007481 A KR900007481 A KR 900007481A KR 910020883 A KR910020883 A KR 910020883A
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integrated circuit
semiconductor integrated
chip
option
series
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KR1019900007481A
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KR920007535B1 (ko
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전동수
석용식
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김광호
삼성전자 주식회사
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Priority to KR1019900007481A priority Critical patent/KR920007535B1/ko
Priority to GB9017779A priority patent/GB2244339B/en
Priority to IT02127490A priority patent/IT1242519B/it
Priority to NL9001837A priority patent/NL194814C/nl
Priority to FR909010474A priority patent/FR2662505B1/fr
Priority to SE9002701A priority patent/SE508000C2/sv
Priority to DE4026326A priority patent/DE4026326C2/de
Priority to JP2219871A priority patent/JPH079753B2/ja
Priority to CN90107204A priority patent/CN1025261C/zh
Priority to SU904830937A priority patent/RU2034306C1/ru
Priority to US07/578,284 priority patent/US5103166A/en
Publication of KR910020883A publication Critical patent/KR910020883A/ko
Application granted granted Critical
Publication of KR920007535B1 publication Critical patent/KR920007535B1/ko
Priority to HK21896A priority patent/HK21896A/xx
Priority to JP2000272748A priority patent/JP3343345B2/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H01L2223/5444—Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

내용 없음

Description

식별회로를 구비한 반도체 집적회로 칩
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 식별회로를 구비한 반도체 집적회로 칩의 일 실시예의 구성도, 제2도는 본 발명에 의한 식별회로를 구비한 반도체 집적회로 칩의 다른 실시예의 구성도, 제3도는 제1도 및 제2도의 옵션수단의 변형된 실시예의 회로도.

Claims (9)

  1. 복수의 전원공급단자와 입력단자를 가지는 반도체 집적회로 칩에 있어서, 상기 어떤 하나의 전원공급단자와 입력단자 사이에 식별회로를 구비하되, 이 식별회로는, 상기 전원 공급단자에 대한 상기 입력단자에 가해지는 입력전위차를 미리 결정된 입력로직레벨로 리미팅시키기 위한 전압리미터, 그리고 이 전압리미터에 직렬로 연결되어 전압리미터의 전류흐름을 칩 제조공정단계에서 결정하기 이한 옵션수단을 구비한 것을 특징으로 하는 반도체 집적회로 칩.
  2. 제1항에 있어서, 상기 전압리미터는 게이트가 드레인에 연결된 MOS 트랜지스터의 다이오드 구성을 복수개 직렬로 연결하여서 이들 MOS 트랜지스터의 게이트 대소오스의 임계 전압치의 합으로 리미팅전압을 설정하는 것을 특징으로 하는 반도체 집적회로 칩.
  3. 제1항에 있어서, 상기 옵션수단을 칩 제조공정 단계에서 퓨즈로 형성하고 이 퓨즈의 용단여부로 옵션처리가 수행되는 것을 특징으로 하는 반도체 집적회로 칩.
  4. 제1항에 있어서, 상기 옵션수단을 칩 제조공정 단계에서 금속마스크에 의한 금속배선의 형성유모로 옵션처리가 수행되는 것을 특징으로 하는 반도체 집적회로 칩.
  5. 제1항에 있어서, 상기 옵션 수단은 게이트가 드레인에 연결된 MOS 트랜지스터와, 이 MOS 트랜지스터에 직렬로 연결된 퓨즈의 조합을 복수개 병렬연결하고, 상기 퓨즈들의 용단된 갯수에 따라 옵션처리가 수행되는 것을 특징으로 하는 반도체 집적회로 칩.
  6. 복수의 전원공급단자와 입력단자들을 가지는 반도체 집적회로 칩에 있어서, 상기 어떤 하나의 전원공급단자와 3개의 입력단자가 각각 연결된 식별회로를 구비하되, 이 식별회로는, 상기 전원공급단자에 의해 상기 제1입력단자에 가해지는 입력전위차를 미리 결정된 입력로직레벨로 리미팅시키고, 이 입력로직레벨을 분압하여 소정레벨의 제어전압을 발생하기 위한 전압리미터, 상기 제2 및 제3 입력단자들 사이에 전류흐름을 칩 제조공정단계에서 결정하기 위한 옵션수단, 그리고 상기 옵션수단에 직렬로 연결되고 상기 전압리미터로부터 공급되는 상기 제어전압에 의해 턴온되는 스위치 수단을 구비한 것을 특징으로 하는 반도체 집적회로 칩.
  7. 제6항에 있어서, 상기 전압리미터는 게이트가 드레인에 연결된 MOS 트랜지스터의 다이오드 구성의 복수개와, 저항을 직렬로 연결하고 상기 저항 양단에 분압되는 전압을 제어전압으로 발생하는 것을 특징으로 하는 반도체 집적회로 칩.
  8. 제6항에 있어서, 상기 옵션수단은 칩 제조공정 단계에서 복수개의 퓨즈로 형성하고, 이 퓨즈의 용단된 개수에 따라 옵션처리가 수행되는 것을 특징으로 하는 반도체 집적회로 칩.
  9. 제8항에 있어서, 상기 스위치수단은 상기 대응하는 각 퓨즈에 드레인 소오스간이 직렬로 연결되고 게이트에 상기 제어전압이 가해지도록 연결된 복수개의 MOS 트랜지스터로 이루어진 것을 특징으로 하는 반도체 집적회로 칩.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019900007481A 1990-05-23 1990-05-23 식별회로를 구비한 반도체 집적회로 칩 KR920007535B1 (ko)

Priority Applications (13)

Application Number Priority Date Filing Date Title
KR1019900007481A KR920007535B1 (ko) 1990-05-23 1990-05-23 식별회로를 구비한 반도체 집적회로 칩
GB9017779A GB2244339B (en) 1990-05-23 1990-08-14 Semiconductor integrated circuit chip having an identification circuit therein
IT02127490A IT1242519B (it) 1990-05-23 1990-08-14 Piastrina con circuito integrato a semiconduttore avente un circuito di identificazione
NL9001837A NL194814C (nl) 1990-05-23 1990-08-17 Geïntegreerde halfgeleiderketen met een identificatieketen in een gemeenschappelijk halfgeleiderlichaam.ì
SE9002701A SE508000C2 (sv) 1990-05-23 1990-08-20 Halvledarbricka för integrerade halvledarkretsar och identifieringskrets för densamma
DE4026326A DE4026326C2 (de) 1990-05-23 1990-08-20 Integriertes Halbleiterschaltungsplättchen (Chip) mit mitintegrierter Identifizierungsschaltungseinrichtung
FR909010474A FR2662505B1 (fr) 1990-05-23 1990-08-20 Puce de circuit integre a semiconducteurs possedant un circuit d'identification a l'interieur.
JP2219871A JPH079753B2 (ja) 1990-05-23 1990-08-20 半導体集積回路チップ
CN90107204A CN1025261C (zh) 1990-05-23 1990-08-25 具有识别电路的半导体集成电路芯片
SU904830937A RU2034306C1 (ru) 1990-05-23 1990-09-04 Тестовая интегральная структура
US07/578,284 US5103166A (en) 1990-05-23 1990-09-06 Semiconductor integrated circuit chip having an identification circuit therein
HK21896A HK21896A (en) 1990-05-23 1996-02-01 Semiconductor integrated circuit chip having an identification circuit therein
JP2000272748A JP3343345B2 (ja) 1990-05-23 2000-09-08 半導体集積回路チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900007481A KR920007535B1 (ko) 1990-05-23 1990-05-23 식별회로를 구비한 반도체 집적회로 칩

Publications (2)

Publication Number Publication Date
KR910020883A true KR910020883A (ko) 1991-12-20
KR920007535B1 KR920007535B1 (ko) 1992-09-05

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KR1019900007481A KR920007535B1 (ko) 1990-05-23 1990-05-23 식별회로를 구비한 반도체 집적회로 칩

Country Status (12)

Country Link
US (1) US5103166A (ko)
JP (2) JPH079753B2 (ko)
KR (1) KR920007535B1 (ko)
CN (1) CN1025261C (ko)
DE (1) DE4026326C2 (ko)
FR (1) FR2662505B1 (ko)
GB (1) GB2244339B (ko)
HK (1) HK21896A (ko)
IT (1) IT1242519B (ko)
NL (1) NL194814C (ko)
RU (1) RU2034306C1 (ko)
SE (1) SE508000C2 (ko)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5332973A (en) * 1992-05-01 1994-07-26 The University Of Manitoba Built-in fault testing of integrated circuits
US5363134A (en) * 1992-05-20 1994-11-08 Hewlett-Packard Corporation Integrated circuit printhead for an ink jet printer including an integrated identification circuit
US5787174A (en) * 1992-06-17 1998-07-28 Micron Technology, Inc. Remote identification of integrated circuit
JP3659981B2 (ja) * 1992-07-09 2005-06-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ダイ特定情報に特徴付けられるダイ上の集積回路を含む装置
US7158031B2 (en) * 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
US5426375A (en) * 1993-02-26 1995-06-20 Hitachi Micro Systems, Inc. Method and apparatus for optimizing high speed performance and hot carrier lifetime in a MOS integrated circuit
US5440230A (en) * 1993-04-02 1995-08-08 Heflinger; Bruce L. Combinatorial signature for component identification
US5686759A (en) * 1995-09-29 1997-11-11 Intel Corporation Integrated circuit package with permanent identification of device characteristics and method for adding the same
US5818251A (en) * 1996-06-11 1998-10-06 National Semiconductor Corporation Apparatus and method for testing the connections between an integrated circuit and a printed circuit board
US5867505A (en) * 1996-08-07 1999-02-02 Micron Technology, Inc. Method and apparatus for testing an integrated circuit including the step/means for storing an associated test identifier in association with integrated circuit identifier for each test to be performed on the integrated circuit
US5927512A (en) 1997-01-17 1999-07-27 Micron Technology, Inc. Method for sorting integrated circuit devices
US6100486A (en) * 1998-08-13 2000-08-08 Micron Technology, Inc. Method for sorting integrated circuit devices
US6072574A (en) * 1997-01-30 2000-06-06 Micron Technology, Inc. Integrated circuit defect review and classification process
US5844803A (en) 1997-02-17 1998-12-01 Micron Technology, Inc. Method of sorting a group of integrated circuit devices for those devices requiring special testing
US5915231A (en) * 1997-02-26 1999-06-22 Micron Technology, Inc. Method in an integrated circuit (IC) manufacturing process for identifying and redirecting IC's mis-processed during their manufacture
US5856923A (en) * 1997-03-24 1999-01-05 Micron Technology, Inc. Method for continuous, non lot-based integrated circuit manufacturing
US5959912A (en) * 1997-04-30 1999-09-28 Texas Instruments Incorporated ROM embedded mask release number for built-in self-test
US5984190A (en) * 1997-05-15 1999-11-16 Micron Technology, Inc. Method and apparatus for identifying integrated circuits
US5907492A (en) 1997-06-06 1999-05-25 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs
US7120513B1 (en) 1997-06-06 2006-10-10 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
US6049624A (en) * 1998-02-20 2000-04-11 Micron Technology, Inc. Non-lot based method for assembling integrated circuit devices
KR100261223B1 (ko) 1998-05-04 2000-07-01 윤종용 식별 회로를 구비하는 반도체장치 및 그 기능 식별방법
US6265232B1 (en) * 1998-08-21 2001-07-24 Micron Technology, Inc. Yield based, in-line defect sampling method
US6268228B1 (en) * 1999-01-27 2001-07-31 International Business Machines Corporation Electrical mask identification of memory modules
US6351116B1 (en) 1999-09-30 2002-02-26 Rockwell Automation Technologies, Inc. System and method for on-line hall sensor programming
US6791157B1 (en) 2000-01-18 2004-09-14 Advanced Micro Devices, Inc. Integrated circuit package incorporating programmable elements
US6430016B1 (en) * 2000-02-11 2002-08-06 Micron Technology, Inc. Setpoint silicon controlled rectifier (SCR) electrostatic discharge (ESD) core clamp
US6772356B1 (en) 2000-04-05 2004-08-03 Advanced Micro Devices, Inc. System for specifying core voltage for a microprocessor by selectively outputting one of a first, fixed and a second, variable voltage control settings from the microprocessor
DE10018356B4 (de) * 2000-04-13 2005-05-04 Siemens Ag Verfahren zum Identifizieren eines elektronischen Steuergeräts und dafür geeignetes Steuergerät
JPWO2002050910A1 (ja) * 2000-12-01 2004-04-22 株式会社日立製作所 半導体集積回路装置の識別方法と半導体集積回路装置の製造方法及び半導体集積回路装置
GB2374426B (en) * 2001-02-07 2003-10-29 Samsung Electronics Co Ltd Apparatus for recognizing chip identification and semiconductor device comprising the apparatus
KR100393214B1 (ko) 2001-02-07 2003-07-31 삼성전자주식회사 패드의 수를 최소화하기 위한 칩 식별 부호 인식 장치 및이를 내장한 반도체 장치
US7188261B1 (en) 2001-05-01 2007-03-06 Advanced Micro Devices, Inc. Processor operational range indicator
JP3941620B2 (ja) * 2001-08-31 2007-07-04 株式会社デンソーウェーブ Ｉｄタグ内蔵電子機器
US7573159B1 (en) 2001-10-22 2009-08-11 Apple Inc. Power adapters for powering and/or charging peripheral devices
DE10241141B4 (de) * 2002-09-05 2015-07-16 Infineon Technologies Ag Halbleiter-Bauelement-Test-Verfahren für ein Halbleiter-Bauelement-Test-System mit reduzierter Anzahl an Test-Kanälen
US7319935B2 (en) * 2003-02-12 2008-01-15 Micron Technology, Inc. System and method for analyzing electrical failure data
JP4272968B2 (ja) * 2003-10-16 2009-06-03 エルピーダメモリ株式会社 半導体装置および半導体チップ制御方法
KR100688518B1 (ko) * 2005-01-12 2007-03-02 삼성전자주식회사 개별 칩들의 디바이스 정보를 직접 판독할 수 있는시그너처 식별 장치를 갖는 멀티 칩 패키지
GB0617697D0 (en) * 2006-09-08 2006-10-18 Algotronix Ltd Method of actively tagging electronic designs and intellectual property cores
KR101161966B1 (ko) * 2010-07-09 2012-07-04 에스케이하이닉스 주식회사 칩 어드레스 회로를 포함하는 멀티 칩 패키지 장치
US10155698B2 (en) 2010-12-02 2018-12-18 Frosty Cold, Llc Cooling agent for cold packs and food and beverage containers
US9879897B2 (en) 2010-12-02 2018-01-30 Frosty Cold, Llc Cooling agent for cold packs and food and beverage containers
CN104228347B (zh) * 2013-06-18 2016-08-17 研能科技股份有限公司 喷墨头芯片
JP6091393B2 (ja) * 2013-10-01 2017-03-08 三菱電機株式会社 半導体装置
US20160065334A1 (en) * 2014-08-29 2016-03-03 R&D Circuits, Inc Structure and Implementation Method for implementing an embedded serial data test loopback, residing directly under the device within a printed circuit board
JP7305934B2 (ja) * 2018-08-02 2023-07-11 富士電機株式会社 差動増幅回路を備える装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
US4020365A (en) * 1976-03-22 1977-04-26 Intersil Incorporated Integrated field-effect transistor switch
US4055802A (en) * 1976-08-12 1977-10-25 Bell Telephone Laboratories, Incorporated Electrical identification of multiply configurable circuit array
US4150331A (en) * 1977-07-29 1979-04-17 Burroughs Corporation Signature encoding for integrated circuits
US4301403A (en) * 1978-12-21 1981-11-17 Measurement Technology Ltd. Electrical circuit testing
DE3002894C2 (de) * 1980-01-28 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltung mit Transistoren
JPS57191896A (en) * 1981-05-21 1982-11-25 Mitsubishi Electric Corp Semiconductor integrated circuit
US4480199A (en) * 1982-03-19 1984-10-30 Fairchild Camera & Instrument Corp. Identification of repaired integrated circuits
US4465973A (en) * 1982-05-17 1984-08-14 Motorola, Inc. Pad for accelerated memory test
JPS59112499A (ja) * 1982-12-18 1984-06-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS59129999A (ja) * 1983-01-17 1984-07-26 Mitsubishi Electric Corp 半導体メモリ装置
JPS59157900A (ja) * 1983-02-25 1984-09-07 Nec Corp 冗長ビツト使用の検出回路を有するメモリ装置
US4510673A (en) * 1983-06-23 1985-04-16 International Business Machines Corporation Laser written chip identification method
US4595875A (en) * 1983-12-22 1986-06-17 Monolithic Memories, Incorporated Short detector for PROMS
GB8428405D0 (en) * 1984-11-09 1984-12-19 Membrain Ltd Automatic test equipment
US4719418A (en) * 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
JPH0782746B2 (ja) * 1985-03-25 1995-09-06 株式会社日立製作所 ダイナミツク型ｒａｍ
JPS61265829A (ja) * 1985-05-20 1986-11-25 Fujitsu Ltd 半導体集積回路
DE3526485A1 (de) * 1985-07-24 1987-02-05 Heinz Krug Schaltungsanordnung zum pruefen integrierter schaltungseinheiten
US4698589A (en) * 1986-03-21 1987-10-06 Harris Corporation Test circuitry for testing fuse link programmable memory devices
US4970454A (en) * 1986-12-09 1990-11-13 Texas Instruments Incorporated Packaged semiconductor device with test circuits for determining fabrication parameters
US4779043A (en) * 1987-08-26 1988-10-18 Hewlett-Packard Company Reversed IC test device and method
US4853628A (en) * 1987-09-10 1989-08-01 Gazelle Microcircuits, Inc. Apparatus for measuring circuit parameters of a packaged semiconductor device
JPH0175400U (ko) * 1987-11-09 1989-05-22
GB2220272B (en) * 1988-06-29 1992-09-30 Texas Instruments Ltd Improvements in or relating to integrated circuits
JPH0291898A (ja) * 1988-09-27 1990-03-30 Nec Corp 半導体記憶装置
JP2705142B2 (ja) * 1988-10-13 1998-01-26 日本電気株式会社 半導体集積回路装置
US4942358A (en) * 1988-11-02 1990-07-17 Motorola, Inc. Integrated circuit option identification circuit and method

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RU2034306C1 (ru) 1995-04-30
JPH079753B2 (ja) 1995-02-01
KR920007535B1 (ko) 1992-09-05
JP3343345B2 (ja) 2002-11-11
JP2001135796A (ja) 2001-05-18
HK21896A (en) 1996-02-09
GB2244339A (en) 1991-11-27
NL194814C (nl) 2003-03-04
IT9021274A1 (it) 1991-11-24
NL9001837A (nl) 1991-12-16
GB9017779D0 (en) 1990-09-26
JPH0428088A (ja) 1992-01-30
FR2662505A1 (fr) 1991-11-29
CN1025261C (zh) 1994-06-29
CN1056770A (zh) 1991-12-04
SE9002701D0 (sv) 1990-08-20
GB2244339B (en) 1994-04-27
SE9002701L (sv) 1991-11-24
NL194814B (nl) 2002-11-01
US5103166A (en) 1992-04-07
DE4026326A1 (de) 1991-11-28
FR2662505B1 (fr) 1994-09-09
SE508000C2 (sv) 1998-08-10
IT1242519B (it) 1994-05-16
IT9021274A0 (it) 1990-08-14
DE4026326C2 (de) 1995-07-27

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