KR910020739A - 불휘발성 반도체기억장치 - Google Patents

불휘발성 반도체기억장치 Download PDF

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Publication number
KR910020739A
KR910020739A KR1019910003747A KR910003747A KR910020739A KR 910020739 A KR910020739 A KR 910020739A KR 1019910003747 A KR1019910003747 A KR 1019910003747A KR 910003747 A KR910003747 A KR 910003747A KR 910020739 A KR910020739 A KR 910020739A
Authority
KR
South Korea
Prior art keywords
nonvolatile semiconductor
semiconductor memory
floating gate
electrons
memory cell
Prior art date
Application number
KR1019910003747A
Other languages
English (en)
Other versions
KR950006211B1 (ko
Inventor
다께시 나까야마
야스시 게라다
가즈오 고바야시
마사노리 하야시고시
요시가즈 미야와끼
Original Assignee
시기 모리야
미쓰비시뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 시기 모리야, 미쓰비시뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR910020739A publication Critical patent/KR910020739A/ko
Application granted granted Critical
Publication of KR950006211B1 publication Critical patent/KR950006211B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Abstract

내용 없음

Description

불휘발성 반도체기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 불휘발성 반도체기억장치의 블럭도, 제5도는 이 발명의 다른 실시예에 의한 불휘발성 반도체기억장치의 블럭도.

Claims (2)

  1. 플로팅게이트를 포함하는 복수의 메모리셀과, 상기 메모리셀의 각각의 플로팅게이트에 전자를 주입할수가 있는 주입수단과, 상기 메모리셀의 각각의 플로팅 게이트로 부터 전자를 빼낼수 있는 빼내는 수단과, 소거동작을 지령하는 소거지령수단과, 상기 소거지령수단의 지령출력에 응답하여 상기 빼내는 수단의 빼내기 동작전에 소거되어야 할 메모리셀의 플로팅 게이트의 모든것에 전자를 동시에 주입하도록 상기 주입 수단을 제어하는 제어수단과를 구비한 불휘발성 반도체기억장치.
  2. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003747A 1990-05-18 1991-03-08 바꿔쓰기 및 일괄소거 가능한 불휘발성 반도체기억장치(Flash EEPROM) KR950006211B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2129991A JPH0426995A (ja) 1990-05-18 1990-05-18 不揮発性半導体記憶装置
JP2-129991 1990-05-18
JP90-129991 1990-05-18

Publications (2)

Publication Number Publication Date
KR910020739A true KR910020739A (ko) 1991-12-20
KR950006211B1 KR950006211B1 (ko) 1995-06-12

Family

ID=15023451

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910003747A KR950006211B1 (ko) 1990-05-18 1991-03-08 바꿔쓰기 및 일괄소거 가능한 불휘발성 반도체기억장치(Flash EEPROM)

Country Status (3)

Country Link
US (1) US5544117A (ko)
JP (1) JPH0426995A (ko)
KR (1) KR950006211B1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0961289B1 (en) * 1991-12-09 2002-10-02 Fujitsu Limited Flash memory with improved erasability and its circuitry
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP2904645B2 (ja) * 1992-05-28 1999-06-14 株式会社東芝 不揮発性半導体メモリ
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
JP2725564B2 (ja) * 1993-09-27 1998-03-11 日本電気株式会社 半導体記憶装置及びそのデータ書込み方法
US5889698A (en) * 1995-01-31 1999-03-30 Hitachi, Ltd. Nonvolatile memory device and refreshing method
JP2780674B2 (ja) * 1995-06-20 1998-07-30 日本電気株式会社 不揮発性半導体記憶装置
US6052306A (en) * 1996-11-04 2000-04-18 Siemens Aktiengesellschaft Method and device for automatic determination of the required high voltage for programming/erasing an EEPROM
US5805499A (en) * 1997-02-28 1998-09-08 Advanced Micro Devices, Inc. Channel hot-carrier page write for NAND applications
US6011721A (en) * 1998-08-12 2000-01-04 Advanced Micro Devices Method for sensing state of erasure of a flash electrically erasable programmable read-only memory (EEPROM)
US6097636A (en) * 1999-09-03 2000-08-01 Silicon Storage Technology, Inc. Word line and source line driver circuitries
JP4747023B2 (ja) * 2006-04-27 2011-08-10 Ｏｋｉセミコンダクタ株式会社 半導体記憶装置
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
JP2011128440A (ja) * 2009-12-18 2011-06-30 Fujitsu Ltd 電圧供給回路及び表示装置
KR101799962B1 (ko) * 2011-05-12 2017-11-22 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 동작 방법
US10062440B1 (en) * 2017-06-20 2018-08-28 Winbond Electronics Corp. Non-volatile semiconductor memory device and reading method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
US4979005A (en) * 1986-07-23 1990-12-18 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
JP2644270B2 (ja) * 1988-04-25 1997-08-25 株式会社日立製作所 半導体記憶装置
US4890259A (en) * 1988-07-13 1989-12-26 Information Storage Devices High density integrated circuit analog signal recording and playback system

Also Published As

Publication number Publication date
US5544117A (en) 1996-08-06
KR950006211B1 (ko) 1995-06-12
JPH0426995A (ja) 1992-01-30

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