DE69636178D1 - Verfahren zum Löschen einer Flash EEPROM Speicherzelle - Google Patents
Verfahren zum Löschen einer Flash EEPROM SpeicherzelleInfo
- Publication number
- DE69636178D1 DE69636178D1 DE69636178T DE69636178T DE69636178D1 DE 69636178 D1 DE69636178 D1 DE 69636178D1 DE 69636178 T DE69636178 T DE 69636178T DE 69636178 T DE69636178 T DE 69636178T DE 69636178 D1 DE69636178 D1 DE 69636178D1
- Authority
- DE
- Germany
- Prior art keywords
- flash eeprom
- program gate
- array
- shared
- erasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/142—Contactless power supplies, e.g. RF, induction, or IR
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US219795P | 1995-08-11 | 1995-08-11 | |
US2197 | 1995-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69636178D1 true DE69636178D1 (de) | 2006-06-29 |
DE69636178T2 DE69636178T2 (de) | 2007-03-29 |
Family
ID=21699650
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69619321T Expired - Lifetime DE69619321T2 (de) | 1995-08-11 | 1996-08-07 | Verfahren zum Programmieren einer Flash-EEPROM-Speicherzelle unter Optimierung des niedrigen Leistungsverbrauchs und Verfahren zum Löschen dieser Zelle |
DE69636178T Expired - Lifetime DE69636178T2 (de) | 1995-08-11 | 1996-08-07 | Verfahren zum Löschen einer Flash EEPROM Speicherzelle |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69619321T Expired - Lifetime DE69619321T2 (de) | 1995-08-11 | 1996-08-07 | Verfahren zum Programmieren einer Flash-EEPROM-Speicherzelle unter Optimierung des niedrigen Leistungsverbrauchs und Verfahren zum Löschen dieser Zelle |
Country Status (4)
Country | Link |
---|---|
US (3) | US6044015A (de) |
EP (1) | EP0762429B1 (de) |
AT (1) | ATE213562T1 (de) |
DE (2) | DE69619321T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0392895B1 (de) * | 1989-04-13 | 1995-12-13 | Sundisk Corporation | EEprom-System mit Blocklöschung |
EP0762429B1 (de) * | 1995-08-11 | 2002-02-20 | Interuniversitair Microelektronica Centrum Vzw | Verfahren zum Programmieren einer Flash-EEPROM-Speicherzelle unter Optimierung des niedrigen Leistungsverbrauchs und Verfahren zum Löschen dieser Zelle |
KR100207504B1 (ko) * | 1996-03-26 | 1999-07-15 | 윤종용 | 불휘발성 메모리소자, 그 제조방법 및 구동방법 |
US6781883B1 (en) * | 1997-03-20 | 2004-08-24 | Altera Corporation | Apparatus and method for margin testing single polysilicon EEPROM cells |
EP0902438B1 (de) | 1997-09-09 | 2005-10-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung |
US6587903B2 (en) | 1998-02-27 | 2003-07-01 | Micron Technology, Inc. | Soft programming for recovery of overerasure |
US6240023B1 (en) | 1998-02-27 | 2001-05-29 | Micron Technology, Inc. | Method for efficiently executing soft programming of a memory block |
TW411624B (en) * | 1998-03-21 | 2000-11-11 | Shiu Ching Shiang | Structure, operation and manufacturing method of flash memory cell through channel writing and erasing |
JP2001092413A (ja) * | 1999-09-24 | 2001-04-06 | Semiconductor Energy Lab Co Ltd | El表示装置および電子装置 |
DE19946883A1 (de) * | 1999-09-30 | 2001-04-12 | Micronas Gmbh | Verfahren zur Herstellung eines integrierten CMOS-Halbleiterspeichers |
DE19946884A1 (de) * | 1999-09-30 | 2001-04-12 | Micronas Gmbh | Eprom-Struktur für Halbleiterspeicher |
US6432761B1 (en) * | 1999-10-01 | 2002-08-13 | Microchip Technology Incorporated | Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-EEPROM |
US6501680B1 (en) | 1999-10-07 | 2002-12-31 | Hyundai Electronics Industries Co., Ltd. | Nonvolatile memory, cell array thereof, and method for sensing data therefrom |
KR100308132B1 (ko) * | 1999-10-07 | 2001-11-02 | 김영환 | 비휘발성 메모리소자와 그의 셀어레이 및 그의 데이타 센싱방법 |
US6154392A (en) * | 1999-10-12 | 2000-11-28 | Patti; Robert | Four-terminal EEPROM cell for storing an analog voltage and memory system using the same to store multiple bits per EEPROM cell |
DE60041313D1 (de) | 1999-10-25 | 2009-02-26 | Imec Inter Uni Micro Electr | Elektrisch programmierbares und löschbares Gerät und ein Verfahren zu seinem Betrieb |
US6414340B1 (en) * | 1999-11-04 | 2002-07-02 | Raytheon Company | Field effect transistor and method for making the same |
US6275414B1 (en) * | 2000-05-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Uniform bitline strapping of a non-volatile memory cell |
US6603679B2 (en) * | 2001-03-05 | 2003-08-05 | Sanyo Electric Co., Ltd. | Coupling coefficient measuring method and coupling coefficient measuring apparatus for semiconductor memory |
TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
TWI292914B (de) * | 2002-01-17 | 2008-01-21 | Macronix Int Co Ltd | |
EP1376676A3 (de) * | 2002-06-24 | 2008-08-20 | Interuniversitair Microelektronica Centrum Vzw | Multibit-Festwertspeicherbauelement und Verfahren |
KR100598047B1 (ko) * | 2004-09-30 | 2006-07-07 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US20060134862A1 (en) * | 2004-12-17 | 2006-06-22 | Patrice Parris | CMOS NVM bitcell and integrated circuit |
US7443732B2 (en) * | 2005-09-20 | 2008-10-28 | Spansion Llc | High performance flash memory device capable of high density data storage |
US7777271B1 (en) * | 2006-09-01 | 2010-08-17 | National Semiconductor Corporation | System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory |
US7961511B2 (en) * | 2006-09-26 | 2011-06-14 | Sandisk Corporation | Hybrid programming methods and systems for non-volatile memory storage elements |
US8325530B2 (en) | 2006-10-03 | 2012-12-04 | Macronix International Co., Ltd. | Cell operation methods using gate-injection for floating gate NAND flash memory |
US7499336B2 (en) * | 2007-05-14 | 2009-03-03 | Skymedi Corporation | Method of programming a nonvolatile memory cell and related memory array |
US7733700B2 (en) * | 2007-07-18 | 2010-06-08 | Flashsilicon, Inc. | Method and structures for highly efficient hot carrier injection programming for non-volatile memories |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8670277B2 (en) | 2011-07-27 | 2014-03-11 | Infineon Technologies Ag | Memory and method for programming memory cells |
FR3012654A1 (fr) | 2013-10-25 | 2015-05-01 | St Microelectronics Rousset | Procede d'ecriture et de lecture d'une memoire morte electriquement programmable et effacable multi-niveaux et dispositif de memoire correspondant |
FR3041807B1 (fr) * | 2015-09-24 | 2017-12-08 | Stmicroelectronics Rousset | Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5042009A (en) * | 1988-12-09 | 1991-08-20 | Waferscale Integration, Inc. | Method for programming a floating gate memory device |
US5077691A (en) * | 1989-10-23 | 1991-12-31 | Advanced Micro Devices, Inc. | Flash EEPROM array with negative gate voltage erase operation |
US5029130A (en) * | 1990-01-22 | 1991-07-02 | Silicon Storage Technology, Inc. | Single transistor non-valatile electrically alterable semiconductor memory device |
US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
US5235544A (en) * | 1990-11-09 | 1993-08-10 | John Caywood | Flash EPROM cell and method for operating same |
BE1004424A3 (nl) * | 1991-01-31 | 1992-11-17 | Imec Inter Uni Micro Electr | Transistorstruktuur voor uitwisbare en programmeerbare geheugens. |
US5212541A (en) * | 1991-04-18 | 1993-05-18 | National Semiconductor Corporation | Contactless, 5v, high speed eprom/flash eprom array utilizing cells programmed using source side injection |
US5257225A (en) * | 1992-03-12 | 1993-10-26 | Micron Technology, Inc. | Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude |
US5422504A (en) * | 1994-05-02 | 1995-06-06 | Motorola Inc. | EEPROM memory device having a sidewall spacer floating gate electrode and process |
EP0762429B1 (de) * | 1995-08-11 | 2002-02-20 | Interuniversitair Microelektronica Centrum Vzw | Verfahren zum Programmieren einer Flash-EEPROM-Speicherzelle unter Optimierung des niedrigen Leistungsverbrauchs und Verfahren zum Löschen dieser Zelle |
-
1996
- 1996-08-07 EP EP96870103A patent/EP0762429B1/de not_active Expired - Lifetime
- 1996-08-07 AT AT96870103T patent/ATE213562T1/de not_active IP Right Cessation
- 1996-08-07 DE DE69619321T patent/DE69619321T2/de not_active Expired - Lifetime
- 1996-08-07 DE DE69636178T patent/DE69636178T2/de not_active Expired - Lifetime
- 1996-08-09 US US08/694,812 patent/US6044015A/en not_active Expired - Lifetime
-
1997
- 1997-06-02 US US08/867,329 patent/US5969991A/en not_active Expired - Lifetime
-
1999
- 1999-06-07 US US09/327,036 patent/US6282124B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0762429A2 (de) | 1997-03-12 |
ATE213562T1 (de) | 2002-03-15 |
US6044015A (en) | 2000-03-28 |
DE69619321D1 (de) | 2002-03-28 |
EP0762429B1 (de) | 2002-02-20 |
DE69636178T2 (de) | 2007-03-29 |
US5969991A (en) | 1999-10-19 |
US6282124B1 (en) | 2001-08-28 |
DE69619321T2 (de) | 2002-10-10 |
EP0762429A3 (de) | 1999-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |