KR910016133A - 반도체 집적회로 - Google Patents

반도체 집적회로 Download PDF

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Publication number
KR910016133A
KR910016133A KR1019910002122A KR910002122A KR910016133A KR 910016133 A KR910016133 A KR 910016133A KR 1019910002122 A KR1019910002122 A KR 1019910002122A KR 910002122 A KR910002122 A KR 910002122A KR 910016133 A KR910016133 A KR 910016133A
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KR
South Korea
Prior art keywords
voltage
power supply
external power
external
value
Prior art date
Application number
KR1019910002122A
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English (en)
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KR940010419B1 (ko
Inventor
시게유키 하야카와
레이치 야나기사와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910016133A publication Critical patent/KR910016133A/ko
Application granted granted Critical
Publication of KR940010419B1 publication Critical patent/KR940010419B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 구성을 나타낸 블록도, 제3도는 본 발명의 제2실시예에 따른 구성을 나타낸 블럭도.

Claims (4)

  1. 소정의 기능을 갖춘 내부회로(15)와, 외부에서 전원전압이 공급되는 외부전원단자(11), 이 외부전원단자(11)의 전압치를 검출하는 외부전압검출수단(12), 이 외부전압검출수단(12)의 검출치가 소정치보다 클 경우 활성화되고, 검출치가 소정치보다도 작을 경우 활성화되지 않으며, 활성시에는 상기 외부전원단자(11)에 공급되는 외부전원전압을 강압시켜 상기 내부회로(15)에 내부전원전압으로서 공급하는 전압강압수단(13) 및, 상기 외부전원단자(11)와 상기 내부회로(15)간에 접속되면서 상기 외부전압검출수단(12)의 검출치가 소정치보다도 작을 경우 도통되도록 제어되는 스위치수단(14)을 구비하여 구성된 것을 특징으로 하는 반도체집적회로.
  2. 제1항에 있어서, 상기 외부전압검출수단(12)은 제1전압치 및 이보다 큰 제2전압치를 각각 검출함으로써, 외부전원전압이 상기 제1전압치보다도 클때에는 상기 전압강압수단(13)이 활성화되고, 외부전원전압이 제1전압치보다도 작을때에는 비활성화되도록 하는 제1제어신호를 상기 전압강압수단(13)에 공급하며, 외부전원전압이 상기 제2전압치보다도 작을 때에는 상기 스위치수단(14)이 도통되고, 외부전원전압이 제2전압치보다도 클때에는 비도통으로 되도록 하는 제2제어신호를 상기 스위치수단(14)에 공급하도록 된 것을 특징으로 하는 반도체 집적회로장치.
  3. 소정의 기능을 갖춘 내부회로(15)와, 외부에서 전원전압이 공급되는 외부전원단자(11), 이 외부전원단자(11)의 전압치를 검출해서 제1및 제2제어신호를 발생시키는 외부전압검출수단(12), 상기 제2제어신호(ø1)에 따라 활성화 또는 비활성화되면서 활성화되어 있을 경우 상기 외부전원단자(11)에 공급되는 외부전원전압을 강압시켜 상기 내부회로(15)에 내부전원전압으로서 공급하는 제1전압강압수단(21), 상기 제2제어신호및 외부에서 공급되는 칩선택신호에 따라 활성화 혹은 비활성화되면서 활성화되어 있을 경우 상기 외부전원단자(11)에 공급되는 외부전원전압을 강압시켜 상기 내부회로(15)에 내부전원전압으로서 공급하는 제2전압강압수단(22) 및, 상기 외부전원단자(11)와 상기 내부회로(15)간에 접속되면서 상기 제1제어신호에 따라 도통제어되는 스위치수단(14)을 구비하여 구성된 것을 특징으로 하는 반도체 집적회로.
  4. 제3항에 있어서, 제1및 제2전압강압수단(21,22)이 동일한 회로구성을 갖추면서 상기 제1전압장압수단(21)의 상기 내부회로(15)에 대한 전류공급능력이 상기 재2전압강압수단(22)보다 크게 설정되어 있는 것을 특징으로 하는 반도체 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002122A 1990-02-08 1991-02-08 반도체집적회로 KR940010419B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2708690 1990-02-08
JP02-27086 1990-02-08
JP02-027086 1990-02-08

Publications (2)

Publication Number Publication Date
KR910016133A true KR910016133A (ko) 1991-09-30
KR940010419B1 KR940010419B1 (ko) 1994-10-22

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US (2) US5184031A (ko)
KR (1) KR940010419B1 (ko)

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Publication number Publication date
US5184031A (en) 1993-02-02
US5347170A (en) 1994-09-13
KR940010419B1 (ko) 1994-10-22

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