KR950026114A - 반도체 소자의 데이타 출력버퍼 - Google Patents

반도체 소자의 데이타 출력버퍼 Download PDF

Info

Publication number
KR950026114A
KR950026114A KR1019940002244A KR19940002244A KR950026114A KR 950026114 A KR950026114 A KR 950026114A KR 1019940002244 A KR1019940002244 A KR 1019940002244A KR 19940002244 A KR19940002244 A KR 19940002244A KR 950026114 A KR950026114 A KR 950026114A
Authority
KR
South Korea
Prior art keywords
data output
semiconductor device
potential
output buffer
output
Prior art date
Application number
KR1019940002244A
Other languages
English (en)
Other versions
KR960013859B1 (ko
Inventor
권정태
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940002244A priority Critical patent/KR960013859B1/ko
Priority to US08/383,005 priority patent/US5508635A/en
Priority to JP7017752A priority patent/JP2824405B2/ja
Priority to DE19503964A priority patent/DE19503964B4/de
Publication of KR950026114A publication Critical patent/KR950026114A/ko
Application granted granted Critical
Publication of KR960013859B1 publication Critical patent/KR960013859B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

본 발명은 반도체 소자의 데이타 출력버퍼에 관한 것으로, 고전위(High)상태 출력시 정전압 발생기(voltage Regulator)로 부터 발생되는 데이타 출력전압(Voh)을 기준전압(Vref)과 같게 유지시키므로써 외부 동작전압의 변화에 무관하게 출력전압의 전위를 일정하게 하여 데이타 변화시 파워라인(Power Line)에 발생되는 노이즈(Noise)를 줄일 수 있도록한 반도체 소자의 데이타 출력버퍼에 관해 기술된다.

Description

반도체 소자의 데이타 출력버퍼
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 첨부된 도면은 본 발명에 따른 반도체 소자의 데이타 출력버퍼의 상세 회로도.

Claims (3)

  1. 반도체 소자의 데이타 출력버퍼에 있어서, 데이타 출력버퍼의 출력단자(Dout)의 전위와 기준전압 발생기(4)의 출력전위를 비교하는 전압 비교기(1)의 출력신호에 따라 데이타 출력버퍼의 출력단자(Dout)의 전위가 결정되고, 출력단자(Dout)의 전위가 일정전위 이상에서는 외부 동작전압의 변화와 무관하게 정전압 발생기(2)의 출력전위로 유지되도록 구성되는 것을 특징으로 하는 반도체 소자의 데이타 출력버퍼.
  2. 제1항에 있어서, 상기 정전압 발생기(2)는 센스 증폭기로부터의 독출 데이타가 “High”상태일때만 인에이블되도록 구성되는 것을 특징으로 하는 반도체 소자의 데이타 출력버퍼.
  3. 제1항에 있어서, 상기 센스증폭기로부터의 독출 데이타(Do)가 “High”상태일때 상기 출력단자(Dout)의 전위를 점차 높이기 위하여 상기 전압 비교기(1)의 출력이 설정된 시간동안 차단되도록 구성되는 것을 특징으로 하는 반도체 소자의 데이타 출력버퍼.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002244A 1994-02-07 1994-02-07 반도체 소자의 데이타 출력버퍼 KR960013859B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940002244A KR960013859B1 (ko) 1994-02-07 1994-02-07 반도체 소자의 데이타 출력버퍼
US08/383,005 US5508635A (en) 1994-02-07 1995-02-03 Reduced noise data output buffer with output level regulation
JP7017752A JP2824405B2 (ja) 1994-02-07 1995-02-06 半導体素子のデータ出力バッファ
DE19503964A DE19503964B4 (de) 1994-02-07 1995-02-07 Datenausgabepuffer einer Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940002244A KR960013859B1 (ko) 1994-02-07 1994-02-07 반도체 소자의 데이타 출력버퍼

Publications (2)

Publication Number Publication Date
KR950026114A true KR950026114A (ko) 1995-09-18
KR960013859B1 KR960013859B1 (ko) 1996-10-10

Family

ID=19376924

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002244A KR960013859B1 (ko) 1994-02-07 1994-02-07 반도체 소자의 데이타 출력버퍼

Country Status (4)

Country Link
US (1) US5508635A (ko)
JP (1) JP2824405B2 (ko)
KR (1) KR960013859B1 (ko)
DE (1) DE19503964B4 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411024B1 (ko) * 2001-06-29 2003-12-12 주식회사 하이닉스반도체 출력 회로

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09261031A (ja) * 1996-03-21 1997-10-03 Oki Micro Design Miyazaki:Kk 半導体集積回路の出力バッファ回路
US6018265A (en) * 1997-12-10 2000-01-25 Lexar Media, Inc. Internal CMOS reference generator and voltage regulator
US6255867B1 (en) 2000-02-23 2001-07-03 Pericom Semiconductor Corp. CMOS output buffer with feedback control on sources of pre-driver stage
US6404246B1 (en) 2000-12-20 2002-06-11 Lexa Media, Inc. Precision clock synthesizer using RC oscillator and calibration circuit
US8629697B2 (en) * 2012-06-01 2014-01-14 SK Hynix Inc. Semiconductor integrated circuit and method of operating the same
US10334193B2 (en) 2016-02-11 2019-06-25 Samsung Electronics Co., Ltd. Read-out circuits of image sensors and image sensors including the same
US10840907B1 (en) * 2019-11-19 2020-11-17 Honeywell International Inc. Source-coupled logic with reference controlled inputs

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857765A (en) * 1987-11-17 1989-08-15 International Business Machines Corporation Noise control in an integrated circuit chip
JPH03219495A (ja) * 1990-01-24 1991-09-26 Sony Corp 出力回路
US5121013A (en) * 1990-02-12 1992-06-09 Advanced Micro Devices, Inc. Noise reducing output buffer circuit with feedback path
JP2922028B2 (ja) * 1991-08-30 1999-07-19 株式会社東芝 半導体集積回路の出力回路
US5184033A (en) * 1991-09-20 1993-02-02 Motorola, Inc. Regulated BiCMOS output buffer
US5367210A (en) * 1992-02-12 1994-11-22 Lipp Robert J Output buffer with reduced noise
US5248906A (en) * 1992-06-12 1993-09-28 Advanced Micro Devices, Inc. High speed CMOS output buffer circuit minimizes output signal oscillation and steady state current
JPH06112801A (ja) * 1992-09-29 1994-04-22 Hitachi Ltd 出力回路
KR0132504B1 (ko) * 1993-12-21 1998-10-01 문정환 데이타 출력버퍼
US5440258A (en) * 1994-02-08 1995-08-08 International Business Machines Corporation Off-chip driver with voltage regulated predrive
US5434519A (en) * 1994-10-11 1995-07-18 International Business Machines Corporation Self-resetting CMOS off-chip driver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411024B1 (ko) * 2001-06-29 2003-12-12 주식회사 하이닉스반도체 출력 회로

Also Published As

Publication number Publication date
US5508635A (en) 1996-04-16
JP2824405B2 (ja) 1998-11-11
KR960013859B1 (ko) 1996-10-10
DE19503964B4 (de) 2006-04-13
DE19503964A1 (de) 1995-08-10
JPH0888558A (ja) 1996-04-02

Similar Documents

Publication Publication Date Title
KR930020449A (ko) 내부전원전압 발생회로
KR920001518A (ko) 반도체 집적회로
KR970055020A (ko) 전력용 반도체 트랜지스터의 과전류 보호회로
KR950026114A (ko) 반도체 소자의 데이타 출력버퍼
KR920015364A (ko) 출력 버퍼회로
KR900019221A (ko) 온도검출수단을 갖는 반도체 집적회로 장치
KR970007378A (ko) 반도체 메모리 장치의 전원 전압 검출 회로
KR960027331A (ko) 버퍼회로 및 바이어스회로
KR920009033A (ko) 제어 전압이 증가함에 따라 출력이 감소하는 구분(區分)적 전류원
KR980005006A (ko) Vcc 검출수단을 이용한 비트라인 전압 보상회로
KR930022363A (ko) 레벨변환회로를 사용한 데이타 출력버퍼
KR100347545B1 (ko) 전원전압 검출기
KR930007005B1 (ko) 마이콤의 리세트 회로
KR950022124A (ko) 데이타 출력버퍼
KR960025743A (ko) 반도체 소자의 감지증폭기
KR920006989A (ko) 불휘발성 반도체기억장치
KR950020720A (ko) 어드레스 천이 검출회로
KR970062848A (ko) 백 바이어스 레벨회로
KR970031140A (ko) 스위칭 모드 전원공급장치의 과전류 보호장치
KR970055517A (ko) 대기상태 전류가 작은 입력 버퍼
KR950022779A (ko) 고주파 변조기의 비디오 클립회로
KR960036325A (ko) 저잡음 출력 버퍼
KR970019099A (ko) 전압제한버퍼를 가진 전류소스
KR980004935A (ko) 반도체 메모리 장치의 내부 전압 변환기(ivc)
KR960024810A (ko) 파워-온-리셋 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110923

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20120921

Year of fee payment: 17

EXPY Expiration of term