KR910013576A - 반도체 장치 및 그 제법 - Google Patents

반도체 장치 및 그 제법 Download PDF

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Publication number
KR910013576A
KR910013576A KR1019900020870A KR900020870A KR910013576A KR 910013576 A KR910013576 A KR 910013576A KR 1019900020870 A KR1019900020870 A KR 1019900020870A KR 900020870 A KR900020870 A KR 900020870A KR 910013576 A KR910013576 A KR 910013576A
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South Korea
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semiconductor device
conductive type
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KR1019900020870A
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KR100231808B1 (ko
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다까유끼 고미
미노루 나까무라
히로아끼 안모
노리까즈 오우찌
히로유끼 미와
아끼오 가야누마
고지 고바야시
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오오가 노리오
소니 가부시끼가이샤
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Publication of KR910013576A publication Critical patent/KR910013576A/ko
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Publication of KR100231808B1 publication Critical patent/KR100231808B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체 장치 및 그 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 래터럴형 바이폴라 트랜지스터의 예를 보여주는 단면도.

Claims (3)

  1. 반도체 기체의 횡측 방향으로 콜렉터 영역, 베이스 영역 및 에미터 영역이 형성되고, 그 콜렉터 영역 및 에미터 영역의 불순물 농도 피크가 상기 기체속에 존재하도록 한 반도체 장치.
  2. 제1도전형의 베이스 영역이 되는 반도체 기체에 한 쌍의 개구를 갖는 제1마스크를 통하여 횡측 방향을 따라서 제2도전형의 콜렉터 영역 및 에미터 영역을 형성하는 공정과, 상기 제1마스크의 개구 간격보다 넓은 개구 간격을 가지는 제2마스크를 통하여 각각 상기 콜렉터 영역 및 에미터 영역에 접속하는 제2도전형의 고농도 영역을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제법.
  3. 공통의 반도체 기체에 래터럴형 트랜지스터와 버티컬형 트랜지스터와 가드링부 쇼트키 배리어 다이오드를 가지는 반도체 장치의 쇼트키 배리어 다이오드를 가지는 반도체 장치의 제법에 있어서, 공통의 마스크에 동시 형성된 각 개구를 통하여 동일의 불순물을 도입하여, 상기 래터럴형 트랜지스터의 에미터 영역 및 콜렉터 영역과, 상기 쇼트키 배이러 다이오드의 가드링 영역과, 버티컬형 트랜지스터의 링크 베이스 영역을 동시에 형성하는 공정을 갖는 반도체 장치의 제법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900020870A 1989-12-28 1990-12-18 반도체 장치 및 그 제법 KR100231808B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1344269A JPH03203265A (ja) 1989-12-28 1989-12-28 半導体装置
JP344269 1989-12-28

Publications (2)

Publication Number Publication Date
KR910013576A true KR910013576A (ko) 1991-08-08
KR100231808B1 KR100231808B1 (ko) 1999-12-01

Family

ID=18367931

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900020870A KR100231808B1 (ko) 1989-12-28 1990-12-18 반도체 장치 및 그 제법

Country Status (5)

Country Link
US (1) US5163178A (ko)
EP (1) EP0435331B1 (ko)
JP (1) JPH03203265A (ko)
KR (1) KR100231808B1 (ko)
DE (1) DE69031488T2 (ko)

Cited By (1)

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KR20000061059A (ko) * 1999-03-23 2000-10-16 윤종용 매몰층을 갖는 쇼트키 다이오드 및 그 제조방법

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DE69326340T2 (de) * 1993-09-27 2000-01-13 Stmicroelectronics S.R.L., Agrate Brianza Geräuscharmer pnp-Transistor
EP0645821B1 (en) * 1993-09-27 2001-09-26 STMicroelectronics S.r.l. Low noise bipolar transistor
JPH07235550A (ja) * 1994-02-21 1995-09-05 Toshiba Corp 半導体装置及びその製造方法
JPH0831841A (ja) * 1994-07-12 1996-02-02 Sony Corp 半導体装置及びその製造方法
JP3528350B2 (ja) * 1995-08-25 2004-05-17 ソニー株式会社 半導体装置の製造方法
US6750091B1 (en) 1996-03-01 2004-06-15 Micron Technology Diode formation method
KR100258436B1 (ko) 1996-10-11 2000-06-01 김덕중 상보형 쌍극성 트랜지스터 및 그 제조 방법
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
JPH10189755A (ja) * 1996-12-20 1998-07-21 Nec Corp 半導体装置及びその製造方法
JP3287269B2 (ja) * 1997-06-02 2002-06-04 富士電機株式会社 ダイオードとその製造方法
CN1051880C (zh) * 1997-12-08 2000-04-26 中国科学院上海冶金研究所 带有稳压管的双极型集成电路及其制造方法
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US6372595B1 (en) * 1999-12-03 2002-04-16 Legerity, Inc. Lateral bipolar junction transistor with reduced parasitic current loss
US6437421B1 (en) 1999-12-03 2002-08-20 Legerity, Inc. Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types
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US7129558B2 (en) * 2002-11-06 2006-10-31 International Rectifier Corporation Chip-scale schottky device
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US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
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JP2013149925A (ja) * 2012-01-23 2013-08-01 Toshiba Corp 半導体装置及びその製造方法
RU2556765C1 (ru) * 2014-02-25 2015-07-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводниковой структуры
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CN107946355B (zh) * 2017-03-02 2024-04-05 重庆中科渝芯电子有限公司 一种横向高压双极结型晶体管及其制造方法
CN112397507B (zh) * 2020-11-16 2022-05-10 杰华特微电子股份有限公司 横向双扩散晶体管及其制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
US5163178A (en) 1992-11-10
EP0435331B1 (en) 1997-09-24
JPH03203265A (ja) 1991-09-04
EP0435331A2 (en) 1991-07-03
EP0435331A3 (en) 1993-09-22
KR100231808B1 (ko) 1999-12-01
DE69031488D1 (de) 1997-10-30
DE69031488T2 (de) 1998-04-16

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