KR910013576A - 반도체 장치 및 그 제법 - Google Patents
반도체 장치 및 그 제법 Download PDFInfo
- Publication number
- KR910013576A KR910013576A KR1019900020870A KR900020870A KR910013576A KR 910013576 A KR910013576 A KR 910013576A KR 1019900020870 A KR1019900020870 A KR 1019900020870A KR 900020870 A KR900020870 A KR 900020870A KR 910013576 A KR910013576 A KR 910013576A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- mask
- semiconductor device
- conductive type
- collector
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 7
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6625—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 래터럴형 바이폴라 트랜지스터의 예를 보여주는 단면도.
Claims (3)
- 반도체 기체의 횡측 방향으로 콜렉터 영역, 베이스 영역 및 에미터 영역이 형성되고, 그 콜렉터 영역 및 에미터 영역의 불순물 농도 피크가 상기 기체속에 존재하도록 한 반도체 장치.
- 제1도전형의 베이스 영역이 되는 반도체 기체에 한 쌍의 개구를 갖는 제1마스크를 통하여 횡측 방향을 따라서 제2도전형의 콜렉터 영역 및 에미터 영역을 형성하는 공정과, 상기 제1마스크의 개구 간격보다 넓은 개구 간격을 가지는 제2마스크를 통하여 각각 상기 콜렉터 영역 및 에미터 영역에 접속하는 제2도전형의 고농도 영역을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제법.
- 공통의 반도체 기체에 래터럴형 트랜지스터와 버티컬형 트랜지스터와 가드링부 쇼트키 배리어 다이오드를 가지는 반도체 장치의 쇼트키 배리어 다이오드를 가지는 반도체 장치의 제법에 있어서, 공통의 마스크에 동시 형성된 각 개구를 통하여 동일의 불순물을 도입하여, 상기 래터럴형 트랜지스터의 에미터 영역 및 콜렉터 영역과, 상기 쇼트키 배이러 다이오드의 가드링 영역과, 버티컬형 트랜지스터의 링크 베이스 영역을 동시에 형성하는 공정을 갖는 반도체 장치의 제법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1344269A JPH03203265A (ja) | 1989-12-28 | 1989-12-28 | 半導体装置 |
JP344269 | 1989-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910013576A true KR910013576A (ko) | 1991-08-08 |
KR100231808B1 KR100231808B1 (ko) | 1999-12-01 |
Family
ID=18367931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900020870A KR100231808B1 (ko) | 1989-12-28 | 1990-12-18 | 반도체 장치 및 그 제법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5163178A (ko) |
EP (1) | EP0435331B1 (ko) |
JP (1) | JPH03203265A (ko) |
KR (1) | KR100231808B1 (ko) |
DE (1) | DE69031488T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000061059A (ko) * | 1999-03-23 | 2000-10-16 | 윤종용 | 매몰층을 갖는 쇼트키 다이오드 및 그 제조방법 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69326340T2 (de) * | 1993-09-27 | 2000-01-13 | Stmicroelectronics S.R.L., Agrate Brianza | Geräuscharmer pnp-Transistor |
EP0645821B1 (en) * | 1993-09-27 | 2001-09-26 | STMicroelectronics S.r.l. | Low noise bipolar transistor |
JPH07235550A (ja) * | 1994-02-21 | 1995-09-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH0831841A (ja) * | 1994-07-12 | 1996-02-02 | Sony Corp | 半導体装置及びその製造方法 |
JP3528350B2 (ja) * | 1995-08-25 | 2004-05-17 | ソニー株式会社 | 半導体装置の製造方法 |
US6750091B1 (en) | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
KR100258436B1 (ko) | 1996-10-11 | 2000-06-01 | 김덕중 | 상보형 쌍극성 트랜지스터 및 그 제조 방법 |
US5763918A (en) * | 1996-10-22 | 1998-06-09 | International Business Machines Corp. | ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up |
JPH10189755A (ja) * | 1996-12-20 | 1998-07-21 | Nec Corp | 半導体装置及びその製造方法 |
JP3287269B2 (ja) * | 1997-06-02 | 2002-06-04 | 富士電機株式会社 | ダイオードとその製造方法 |
CN1051880C (zh) * | 1997-12-08 | 2000-04-26 | 中国科学院上海冶金研究所 | 带有稳压管的双极型集成电路及其制造方法 |
US6611044B2 (en) | 1998-09-11 | 2003-08-26 | Koninklijke Philips Electronics N.V. | Lateral bipolar transistor and method of making same |
US6291303B1 (en) * | 1998-12-16 | 2001-09-18 | United Microelectronics Corp. | Method for manufacturing a bipolar junction device |
US6372595B1 (en) * | 1999-12-03 | 2002-04-16 | Legerity, Inc. | Lateral bipolar junction transistor with reduced parasitic current loss |
US6437421B1 (en) | 1999-12-03 | 2002-08-20 | Legerity, Inc. | Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types |
US6914306B1 (en) * | 2000-08-25 | 2005-07-05 | Micron Technology, Inc. | Electrostatic discharge protection device |
US6657273B2 (en) * | 2001-06-12 | 2003-12-02 | International Rectifirer Corporation | Termination for high voltage schottky diode |
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
SE532625C2 (sv) * | 2007-04-11 | 2010-03-09 | Transic Ab | Halvledarkomponent i kiselkarbid |
US8338906B2 (en) * | 2008-01-30 | 2012-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Schottky device |
US7781859B2 (en) * | 2008-03-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diode structures having deep wells for improving breakdown voltages |
EP2180517A1 (en) * | 2008-10-24 | 2010-04-28 | Epcos Ag | Pnp bipolar transistor with lateral collector and method of production |
US9184097B2 (en) * | 2009-03-12 | 2015-11-10 | System General Corporation | Semiconductor devices and formation methods thereof |
JP2013149925A (ja) * | 2012-01-23 | 2013-08-01 | Toshiba Corp | 半導体装置及びその製造方法 |
RU2556765C1 (ru) * | 2014-02-25 | 2015-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова | Способ изготовления полупроводниковой структуры |
CN107946356B (zh) * | 2017-03-02 | 2024-04-09 | 重庆中科渝芯电子有限公司 | 一种横向高压功率双极结型晶体管及其制造方法 |
CN107946355B (zh) * | 2017-03-02 | 2024-04-05 | 重庆中科渝芯电子有限公司 | 一种横向高压双极结型晶体管及其制造方法 |
CN112397507B (zh) * | 2020-11-16 | 2022-05-10 | 杰华特微电子股份有限公司 | 横向双扩散晶体管及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846821A (en) * | 1968-11-04 | 1974-11-05 | Hitachi Ltd | Lateral transistor having emitter region with portions of different impurity concentration |
US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
JPS5662361A (en) * | 1979-10-29 | 1981-05-28 | Hitachi Ltd | Semiconductor device |
FR2492165A1 (fr) * | 1980-05-14 | 1982-04-16 | Thomson Csf | Dispositif de protection contre les courants de fuite dans des circuits integres |
US4400712A (en) * | 1981-02-13 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Static bipolar random access memory |
US4510676A (en) * | 1983-12-06 | 1985-04-16 | International Business Machines, Corporation | Method of fabricating a lateral PNP transistor |
-
1989
- 1989-12-28 JP JP1344269A patent/JPH03203265A/ja active Pending
-
1990
- 1990-12-18 KR KR1019900020870A patent/KR100231808B1/ko not_active IP Right Cessation
- 1990-12-27 US US07/634,454 patent/US5163178A/en not_active Expired - Lifetime
- 1990-12-28 DE DE69031488T patent/DE69031488T2/de not_active Expired - Fee Related
- 1990-12-28 EP EP90125702A patent/EP0435331B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000061059A (ko) * | 1999-03-23 | 2000-10-16 | 윤종용 | 매몰층을 갖는 쇼트키 다이오드 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US5163178A (en) | 1992-11-10 |
EP0435331B1 (en) | 1997-09-24 |
JPH03203265A (ja) | 1991-09-04 |
EP0435331A2 (en) | 1991-07-03 |
EP0435331A3 (en) | 1993-09-22 |
KR100231808B1 (ko) | 1999-12-01 |
DE69031488D1 (de) | 1997-10-30 |
DE69031488T2 (de) | 1998-04-16 |
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