KR910006706B1 - 발광다이오드 어레이 헤드의 제조방법 - Google Patents

발광다이오드 어레이 헤드의 제조방법 Download PDF

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KR910006706B1
KR910006706B1 KR1019880016530A KR880016530A KR910006706B1 KR 910006706 B1 KR910006706 B1 KR 910006706B1 KR 1019880016530 A KR1019880016530 A KR 1019880016530A KR 880016530 A KR880016530 A KR 880016530A KR 910006706 B1 KR910006706 B1 KR 910006706B1
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light emitting
diode array
emitting diode
wiring
manufacturing
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이종봉
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삼성전자 주식회사
안시환
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Priority to US07/358,161 priority patent/US4936808A/en
Priority to NL8901403A priority patent/NL192359C/nl
Priority to FR8907465A priority patent/FR2641394B1/fr
Priority to JP1178209A priority patent/JPH0644642B2/ja
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Priority to GB8926626A priority patent/GB2225897B/en
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Abstract

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발광다이오드 어레이 헤드의 제조방법
제1도는 종래의 일반적인 발광다이오드 어레이의 개략도.
제2도는 종래의 일반적인 발광다이오드 어레이 헤드의 조립도.
제3도는 본 발명에 따른 발광다이오드 어레이 헤드의 평면도.
제4a-e도는 본 발명에 따른 발광다이오드 어레이 헤드의 제조공정도.
본 발명은 발광다이오드 어레이 헤드의 제조방법에 관한 것으로, 특히 발광다이오드 어레이를 세라믹등의 기판에 조립할 때 어레이 소자의 개별 전극과 외부 배선을 일일이 금선으로 연결하지 않고 간단히 연결할 수 있는 발광다이오드 어레이 헤드의 제조방법을 제공함에 있다.
최근 고도 정보화 시대를 맞아 컴퓨터등의 자동화 기기의 정보 처리능력이 향상됨에 따라 출력기로써 프린터의 고속, 고화질, 다기능화가 요구되고 있다. 따라서, 전자사진 기술을 이용한 광 프린터중 발광다이오드 어레이 방식을 상기의 요구에 맞춰 고출력, 고집적화가 진행되고 있다. 고화질을 실현하기 위한 발광다이오드의 어레이방식은 발광다이오드가 고집적화로 이루어지므로 이에 따라 상기 발광다이오드 어레이를 세라믹등의 기판에 조립하는 것이 대부분인데, 이는 조립하는 공정이 매우 어려운 것으로 알려져 있다.
제1도는 종래의 일반적인 발광다이오드 어레이중 일부분을 나타낸 도면이다. 도면을 참조하면, 참조번호(1)는 갈륨비소(GaAs)기판이고, (2)는 갈륨비소인(GaAsP)박막이며, (3)은 절연막이고, (4)은 아연이 확산된 영역이며, (5)는 발광다이오드의 P형 개별 전극이고, (6)은 n형 공통 전극이고, (7)은 발광면이다. 상기에서 n형 공통전극(6)과 발광다이오드의 P형 개별전극(5)에 전압을 인가하면 발광면(7)을 통하여 빛이 방출된다. 상기와 같이 발광다이오드 어레이는 P형 개별 전극(5)이 발광면(7)쪽에 위치하고 n형 공통전극(6)은 기판쪽에 위치하고 있으므로 제2도와 같이 조립했었다.
제2도를 참조하면 공통전극 배선(14)과 외부배선(12)이 형성되 세라믹 기판(11)등에 발광다이오드 어레이(13)를 조립할 때 발광소자의 공통전극(6)은 세라믹 기판(11)의 공통전극 배선(14)과 접속하고, 각 발광소자의 개별전극(5)은 하나 하나 금선(Gold Wire)(15)으로 외부배선(12)과 연결하여야 한다. 그러나 이와같이 금선으로 연결을 한 경우에 있어서 일반 글자 인쇄인 240DPI(Dot Per Inch)의 밀도로 A4용지를 인쇄하기 위해서는 총 2048개의 금속 연결이 필요하며, 고화질인 400DPI의 밀도로 A4용지를 인쇄하기 위해서는 3584개의 금선연결이 필요하고 금선간의 간격도 100㎛정도가 되므로 제작공정의 어려움과 수율이 낮아지는 문제점이 있었다.
따라서 본 발명의 목적은 세라믹 기판상에 발광다이오드 어레이를 형성함에 있어 발광다이오드 어레이 소자의 개별전극과 외부배선의 전기적 연결을 위한 배선을 간단히 형성할 수 있는 발광다이오드 어레이 헤드의 제조방법을 제공함에 있다.
상기와 같은 목적을 달성하기 위하여 본 발명은 발광다이오드 어레이소자의 두께만큼 홈을 파인 세라믹 기판상에 1차배선과 외부배선을 형성하는 제1공정과, 상기 세라믹 기판에 형성된 홈에 발광다이오드 어레이 소자를 접착하는 제2공정과, 상기 세라믹기판과 발광다이오드 어레이 소자 상부의 전면에 절연막을 형성하는 제3공정과, 상기 외부배선과 발광다이오드 어레이 소자의 개별전극이 드러나도록 에칭하여 접촉창을 형성하는 제4공정과, 상기 개별전극과 외부배선과 전기적으로 연결하는 2차배선을 형성하는 제5공정으로 이루어짐을 특징으로 한다.
이하 본 발명을 첨부한 도면을 참조하여 상세히 설명한다.
제3도는 본 발명에 따라 제1도와 같은 일반적인 발광다이오드 어레이 소자로써 제작된 발광다이오드 어레이 헤드의 평면도이다. 상기 제3도는 세라믹 기판(20)의 중간에 일렬로 배열된 다수개의 발광면(7)과 상기 발광면(7)과 동일한 갯수의 개별전극을 포함하는 발광다이오드 어레이소자(26)과, 상기 세라믹 기판(20)에 상기 발광면(7)과 동일한 갯수의 외부배선(22)과, 상기 각 발광다이오드의 개별전극과 외부전극(22)을 각각의 콘택(31)(32)을 통하여 전기적으로 연결하는 2차배선(34)으로 구성된다.
제4a-e도는 본 발명에 따른 일실시예의 발광다이오드 어레이 헤드의 제조공정도로서, 상기 제3도의 A-A' 단면부이다.
이하 제4a-e도를 참조하여 발광다이오드 어레이 헤드의 제조방법을 상세히 설명한다. 제4a도는 발광다이오드 어레이소자(26)의 두께와 같도록 홈(21)이 파여진 세라믹 기판(26)상에 알루미늄등의 금속을 진공증착등의 방법을 이용하여 10㎛정도의 두께로 형성한 후 통상의 사진 식각방법으로 공통전극으로 이용되는 1차배선(24)과 외부배선(22)을 형성한 도면이다.
제4b도는 상기 홈(21)에 개별전극(5)이 위를 향하게 발광다이오드 어레이 소자(26)을 위치하도록 하여 에폭시수지(Epoxy Plastic)로 접착한 도면이다.
그 후 상기 실리콘기판(20)과 발광다이오드 어레이소자(26)의 상부에 SOG(Spin oN Glass)같은 점성이 작은 부도체 매질로 도포를 하여 상기 세라믹 기판(20)과 발광다이오드 어레이 소자(26)사이의 공간(28)을 채우고 표면을 평탄화되도록 한 후 400℃에서 10분정도 열을 가하여 3㎛정도의 절연막(30)을 형성하면 제4c도와 같게 된다.
그다음 발광다이오드 어레이 소자(26)의 개별전극(5)과 외부배선(22)이 형성되어 있는 부분을 통상의 사진 식각공정으로 접촉창(31)(32)을 형성하면 제4도d도와 같게 된다. 그후 제4d도와 같은 기판상부 전면에 알루미늄등의 금속막을 진공증착등의 방법으로 2㎛정도로 형성하여 상기 접촉창(31)(32)을 통해 개별전극(5)과 외부배선(22)를 전기적으로 연결한 후 필요하지 않은 부분을 통상의 사진 식각공정으로 제거하여 2차배선을 형성하면 제4e도와 같다. 상기와 같이 형성된 발광다이오드 어레이 헤드는 외부배선(22)과 공통전극으로 이용되는 1차배선(24)에 전압을 인가하면 개별 발광다이오드에 전류가 흐르게되어 빛을 발광면(7)에서 내게된다.
따라서 상술한 바와 같이 본 발명은 세라믹 기판상의 외부전극과 발광다이오드 어레이 소자의 개별 전극사이에 배선을 할 때 일일이 금선으로 결하지 않고 금속을 도포한후 에칭을 하여 동시에 배선을 형성하므로 발광다이오드 어레이 헤드의 조립이 용이해지며, 기계적 접촉에 의해 배선연결이 파손될 위험이 없으므로 신뢰성을 크게 향상시킬 수 있는 잇점이 있다.

Claims (1)

  1. 발광다이오드 어레이 헤드의 제조방법에 있어서, 발광다이오드 어레이 소자(26)의 두께정도 홈(21)이 형성된 세라믹 기판(20)상에 외부배선(22)과 공통전극으로 이용된 1차배선(24)을 형성하는 제1공정과, 상기 홈(21)에 발광다이오드 어레이소자(26)을 접착하는 제2공정과, 상기 세라믹 기판(20)과 발광다이오드 어레이 소자(26) 상부의 전면에 절면막(30)을 형성하는 제3공정과, 상기 발광다이오드 어레이소자(26)의 개별전극(5)과 외부배선(22)이 드러나도록 절연막(30)을 선택적 에칭하여 접촉창(31)(32)를 형성하는 제4공정과, 상기 형성된 접촉창(31)(32)을 통하여 개별전극(5)과 외부배선(22)를 전기적으로 연결하는 2차배선(34)를 형성함을 특징으로 하는 발광다이오드 어레이 헤드의 제조방법.
KR1019880016530A 1988-12-12 1988-12-12 발광다이오드 어레이 헤드의 제조방법 KR910006706B1 (ko)

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KR1019880016530A KR910006706B1 (ko) 1988-12-12 1988-12-12 발광다이오드 어레이 헤드의 제조방법
US07/358,161 US4936808A (en) 1988-12-12 1989-05-30 Method of making an LED array head
NL8901403A NL192359C (nl) 1988-12-12 1989-06-02 Werkwijze voor het vervaardigen van een LED matrixkop.
FR8907465A FR2641394B1 (fr) 1988-12-12 1989-06-06 Procede pour fabriquer une tete d'impression formee d'un reseau de diodes photoemissives
JP1178209A JPH0644642B2 (ja) 1988-12-12 1989-07-12 発光ダイオードアレイヘッドの製造方法
DE3923633A DE3923633C2 (de) 1988-12-12 1989-07-17 Verfahren zur Herstellung eines Leuchtdioden-Matrixkopfes
GB8926626A GB2225897B (en) 1988-12-12 1989-11-24 An led array head and a method of making the same

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DE3923633A1 (de) 1990-06-13
GB2225897B (en) 1992-12-23
NL192359C (nl) 1997-06-04
KR900011053A (ko) 1990-07-11
DE3923633C2 (de) 1994-12-22
US4936808A (en) 1990-06-26
FR2641394B1 (fr) 1994-01-07
NL8901403A (nl) 1990-07-02
GB2225897A (en) 1990-06-13
JPH0644642B2 (ja) 1994-06-08
FR2641394A1 (fr) 1990-07-06
JPH02174274A (ja) 1990-07-05
GB8926626D0 (en) 1990-01-17

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